WO2010149294A3 - Method for producing a ewt solar cell - Google Patents

Method for producing a ewt solar cell Download PDF

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Publication number
WO2010149294A3
WO2010149294A3 PCT/EP2010/003583 EP2010003583W WO2010149294A3 WO 2010149294 A3 WO2010149294 A3 WO 2010149294A3 EP 2010003583 W EP2010003583 W EP 2010003583W WO 2010149294 A3 WO2010149294 A3 WO 2010149294A3
Authority
WO
WIPO (PCT)
Prior art keywords
emitter
semiconductor substrate
front face
doping type
doping
Prior art date
Application number
PCT/EP2010/003583
Other languages
German (de)
French (fr)
Other versions
WO2010149294A2 (en
Inventor
Nicola Mingirulli
Daniel Biro
Ralf Preu
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Publication of WO2010149294A2 publication Critical patent/WO2010149294A2/en
Publication of WO2010149294A3 publication Critical patent/WO2010149294A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a method for producing an EWT solar cell from a semiconductor substrate (1) of a first doping type, having a front and rear face and a plurality of recesses, each extending from the front to the rear face of the semiconductor substrate, comprising the following process steps: A) producing at least the follow emitter regions of a second doping type opposing the first doping type in the semiconductor substrate (1): a front face emitter, a rear face emitter, and a plurality of connecting emitters, each of which at least partially covers the wall of a recess, wherein the emitter regions each form a pn junction to the semiconductor substrate (1); B) applying at least one base contact structure and at least one emitter contact structure to the rear face of the semiconductor substrate. The invention is characterized in that a front face coating structure is applied to the front face of the semiconductor substrate prior to process step A, wherein the front face coating structure comprises at least one diffusion barrier coating and/or at least one front face doping coating containing the doping material of the second doping type, and in that a diffusion is performed in process step A by means of at least one doping material of the second doping type from the gas phase in order to produce at least the rear face emitter and the plurality of connecting emitters, wherein said diffusion is performed from the gas phase, and the front face emitter is produced in situ in a diffusion furnace.
PCT/EP2010/003583 2009-06-22 2010-06-15 Method for producing a ewt solar cell WO2010149294A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009030096.1 2009-06-22
DE102009030096A DE102009030096A1 (en) 2009-06-22 2009-06-22 Process for producing an EWT solar cell

Publications (2)

Publication Number Publication Date
WO2010149294A2 WO2010149294A2 (en) 2010-12-29
WO2010149294A3 true WO2010149294A3 (en) 2012-01-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/003583 WO2010149294A2 (en) 2009-06-22 2010-06-15 Method for producing a ewt solar cell

Country Status (2)

Country Link
DE (1) DE102009030096A1 (en)
WO (1) WO2010149294A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012223698A1 (en) * 2012-12-19 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. concentrator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0881694A1 (en) * 1997-05-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Solar cell and process of manufacturing the same
JP2002134488A (en) * 2000-10-25 2002-05-10 Sony Corp Method for forming film and plasma chemical vapor growing system
US20030132498A1 (en) * 2002-01-16 2003-07-17 Hitachi, Ltd. Photovoltaic device and making of the same
US20090126786A1 (en) * 2007-11-13 2009-05-21 Advent Solar, Inc. Selective Emitter and Texture Processes for Back Contact Solar Cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104091A (en) 1977-05-20 1978-08-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Application of semiconductor diffusants to solar cells by screen printing
US4514440A (en) 1983-12-12 1985-04-30 Allied Corporation Spin-on dopant method
US6998288B1 (en) 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0881694A1 (en) * 1997-05-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Solar cell and process of manufacturing the same
JP2002134488A (en) * 2000-10-25 2002-05-10 Sony Corp Method for forming film and plasma chemical vapor growing system
US20030132498A1 (en) * 2002-01-16 2003-07-17 Hitachi, Ltd. Photovoltaic device and making of the same
US20090126786A1 (en) * 2007-11-13 2009-05-21 Advent Solar, Inc. Selective Emitter and Texture Processes for Back Contact Solar Cells

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
C. CHARLES ET AL.: "SiO2 deposition from oxygen/silane pulsed helicon diffusion plasmas", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 67, no. 1, 3 July 1995 (1995-07-03), pages 40 - 42, XP012013463, ISSN: 0003-6951, DOI: 10.1063/1.115485 *
DEMESMAEKER E ET AL: "LOW-TEMPERATURE SURFACE PASSIVATION OF SILICON SOLAR CELLS BY MEANS OF A TMCTS OXIDE", 12TH. E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. AMSTERDAM, THE NETHERLANDS, APRIL 11 - 15, 1994; [PROCEEDINGS OF THE INTERNATIONAL PHOTOVOLTAIC SOLAR ENERGY CONFERENCE], BEDFORD : H.S. STEPHENS & ASSOCIATES, GB, vol. CONF. 12, 11 April 1994 (1994-04-11), pages 713 - 715, XP001136839, ISBN: 978-0-9521452-4-0 *
ZHANG JIANMING ET AL: "Mechanisms of SiO2 film deposition from tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, and trimethylsilane plasmas", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AVS /AIP, MELVILLE, NY., US, vol. 22, no. 1, 1 January 2004 (2004-01-01), pages 201 - 213, XP012073526, ISSN: 0734-2101, DOI: 10.1116/1.1635392 *

Also Published As

Publication number Publication date
DE102009030096A1 (en) 2010-12-23
WO2010149294A2 (en) 2010-12-29

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