WO2010131784A1 - Reflection type display and manufacturing method thereof - Google Patents
Reflection type display and manufacturing method thereof Download PDFInfo
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- WO2010131784A1 WO2010131784A1 PCT/KR2009/002476 KR2009002476W WO2010131784A1 WO 2010131784 A1 WO2010131784 A1 WO 2010131784A1 KR 2009002476 W KR2009002476 W KR 2009002476W WO 2010131784 A1 WO2010131784 A1 WO 2010131784A1
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- electrode
- film layer
- piezoelectric film
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- type display
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000001066 destructive effect Effects 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000002310 reflectometry Methods 0.000 abstract description 17
- 230000005855 radiation Effects 0.000 abstract description 6
- 239000002184 metal Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/213—Fabry-Perot type
Definitions
- This disclosure relates to a reflection type display that controls the interference of light in a piezoelectric manner, and a manufacturing method thereof.
- flat plate displays are classified into (liquid crystal displays (LCDs), plasma display panels (PDPs), organic light emitting diodes (OLEDs) and so on.
- LCDs liquid crystal displays
- PDPs plasma display panels
- OLEDs organic light emitting diodes
- LCDs may adopt a transmission type that transmits light from a backlight unit (BLU) composed of a light-emitting diode (LED) or a cold cathode fluorescent lamp (CCFL) or a reflection type that reflects an external light.
- BLU backlight unit
- LED light-emitting diode
- CCFL cold cathode fluorescent lamp
- LCDs are the most widely used for small displays such as cellular phones as well as large TVs.
- the operation time of the portable device should be extended. For this, power consumption of the display needs to be minimized.
- the transmission type display consumes a lot of power since it uses a backlight, although it gives bright images in a dark environment.
- the reflection type display that realizes various colors based on interference by ambient light may reduce power consumption since it does not use a backlight.
- An example of the reflection type display is a display using static electricity.
- the degree of adhesion is different at an edge of the pixel and at a center of the pixel.
- edge blurring the edge of each pixel may exhibit apparently different color from that of the center.
- This disclosure is designed to solve the above problems, and an object of the disclosure is to provide a reflection type display capable of reducing edge blurring and electricity leakage by controlling light interference in a piezoelectric manner, and a manufacturing method thereof.
- a reflection type display which includes a lower substrate; a first electrode formed on the lower substrate; a piezoelectric film layer formed on the first electrode; and a second electrode formed on the piezoelectric film layer, wherein the piezoelectric film layer changes a thickness depending on the voltage applied to the first and second electrodes.
- the first electrode may be made of a reflective electrode that reflects the light incident from the outside
- the second electrode may be made of a transparent electrode that transmits the light incident from the outside and the light reflected on the first electrode.
- the thickness of the piezoelectric film layer may be controlled such that destructive interference occurs between the light reflected on the second electrode and the light reflected on the first electrode if a bias voltage is not applied to the first and the second electrodes, and constructive interference occurs between the light reflected on the second electrode and the light reflected on the first electrode due to the change of thickness of the piezoelectric film layer caused by the piezoelectric effect if a bias voltage is applied to the first and the second electrodes.
- a reflection type display which includes a lower substrate; a reflection film formed on the lower substrate to reflect the light incident from the outside; a piezoelectric film layer formed on the reflection film; and first and second electrodes formed on the piezoelectric film layer to be spaced apart from each other in parallel, wherein the piezoelectric film layer changes a thickness depending on the voltage applied to the first and second electrodes.
- the first and second electrodes may be made of electrodes that transmit the light incident from the outside and the light reflected on the reflection film.
- the thickness of the piezoelectric film layer may be controlled such that destructive interference occurs between the light reflected on the reflection film and the light reflected on the first and second electrodes if a bias voltage is not applied to the first and the second electrodes; and constructive interference occurs between the light reflected on the reflection film and the light reflected on the first and second electrodes due to the change of thickness of the piezoelectric film layer caused by the piezoelectric effect if a bias voltage is applied to the first and the second electrodes.
- a method for manufacturing a reflection type display which includes preparing a lower substrate; forming a first electrode on the lower substrate, the first electrode being made of a reflective electrode that reflects the light incident from the outside; forming a piezoelectric film layer on the first electrode, the piezoelectric film changing a thickness depending on voltage; and forming a second electrode on the piezoelectric film layer, the second electrode being made of a transparent electrode that transmits the light incident from the outside and the light reflected on the first electrode.
- a method for manufacturing a reflection type display which includes preparing a lower substrate; forming a reflection film on the lower substrate, the reflection film reflecting the light incident from the outside; forming a piezoelectric film layer on the reflection film, the piezoelectric film changing a thickness depending on voltage; and forming first and second electrodes on the piezoelectric film layer to be spaced apart from each other in parallel, the first and second electrodes which could be made of electrodes that transmit the light incident from the outside and the light reflected on the reflection film.
- the interference of light is controlled in a piezoelectric manner, so occurrence of edge blurring caused by bending or moving may be decreased as compared with the displays using static electricity. Also, since the interference of light is controlled in a piezoelectric manner, current leakage may be reduced as compared with the displays using static electricity.
- the piezoelectric material provided between two electrodes exhibits great variation of reflectivity depending on thickness, the reflectivity may be sufficiently changed even with a small displacement. Thus, high brightness may be ensured with a small intensity of radiation.
- Figs. 1 and 2 are sectional views schematically showing a reflection type display according to one embodiment
- Figs. 3 and 4 are sectional views schematically showing a reflection type display according to another embodiment
- Fig. 5 is a flowchart illustrating a method for manufacturing a reflection type display according to one embodiment
- Fig. 6 is a flowchart illustrating a method for manufacturing a reflection type display according to another embodiment.
- Fig. 7 is a graph showing a reflectivity of the reflection type display against RGB wavelengths depending on the thickness of a piezoelectric film changed by applied voltage.
- Figs. 1 and 2 are sectional views schematically showing a reflection type display according to one embodiment.
- a lower substrate 10 is made of glass or formed as a flexible substrate.
- a first electrode 20 is formed on the lower substrate 10, and it may be configured as a reflective electrode that reflects light incident from the outside.
- the first electrode 20 is formed on the lower substrate 10 by vacuum deposition or printing.
- the first electrode 20 may be made of metal film with high reflectivity so as to reflect the light incident from the outside.
- the metal film may include Al or its alloys.
- a piezoelectric film layer 30 is formed on the first electrode 20. Also, the piezoelectric film layer 30 changes its thickness due to the piezoelectric effect caused by the voltage applied to the first electrode 20 and a second electrode 40.
- the piezoelectric film layer 30 may be made of materials with excellent piezoelectric characteristics by means of sputtering, laser abrasion, chemical vapor deposition (CVD), sol-gel method, and so on.
- the thickness of the piezoelectric film layer 30 is controlled such that destructive interference occurs between the light reflected on the second electrode 40 and the light reflected on the first electrode 20 if a bias voltage is not applied to the first electrode 20 and the second electrode 40. Also, as shown in Fig. 2, the thickness of the piezoelectric film layer 30 is controlled such that constructive interference occurs between the light reflected on the second electrode 40 and the light reflected on the first electrode 20 due to the change of thickness of the piezoelectric film layer 30 caused by the piezoelectric effect if a bias voltage is applied to the first electrode 20 and the second electrode 40.
- the thickness of the piezoelectric film layer 30 may be controlled through calculation of Fabry-Perot interference depending on thickness and refractive index of each film layer.
- the second electrode 40 is formed on the piezoelectric film layer 30. Also, the second electrode 40 may be formed as a transparent electrode that transmits the light incident from the outside and the light reflected on the first electrode 20.
- Figs. 3 and 4 are sectional views schematically showing a reflection type display according to another embodiment.
- a lower substrate 50 is made of glass or formed as a flexible substrate.
- a reflection film 60 is formed on the lower substrate 50 and reflects the light incident from the outside.
- the reflection film 60 may be made of metal film with high reflectivity so as to reflect the light incident from the outside.
- the metal film may include Al or its alloys.
- a piezoelectric film layer 70 is formed on the reflection film 60 and changes its thickness depending on the voltage applied to a first electrode 80 and a second electrode 90.
- the piezoelectric film layer 70 may be made of materials with excellent piezoelectric characteristics by means of sputtering, laser abrasion, CVD, sol-gel method, and so on.
- the thickness of the piezoelectric film layer 70 is controlled such that destructive interference occurs between the light reflected on the reflection film 60 and the light reflected on the first and second electrodes 80, 90 if a bias voltage is not applied to the first electrode 80 and the second electrode 90. Also, as shown in Fig. 4, the thickness of the piezoelectric film layer 70 is controlled such that constructive interference occurs between the light reflected on the reflection film 60 and the light reflected on the first and second electrodes 80, 90 due to the change of thickness of the piezoelectric film layer 70 caused by the piezoelectric effect if a bias voltage is applied to the first electrode 80 and the second electrode 90.
- the first electrode 80 and the second electrode 90 are formed on the piezoelectric film layer 70 to be spaced apart from each other in parallel. Also, the first electrode 80 and the second electrode 90 may be able to be made of transparent electrodes that transmit the light incident from the outside and the light reflected on the reflection film 60 or narrow opaque electrodes.
- Fig. 5 is a flowchart illustrating a method for manufacturing a reflection type display according to one embodiment.
- the lower substrate 10 is prepared (S10).
- the first electrode 20 made of a reflective electrode reflecting the light incident from the outside is formed on the prepared lower substrate 10 (S12).
- the lower substrate 10 prepared in the step S10 is made of glass or formed as a flexible substrate.
- the first electrode 20 may be formed on the lower substrate 10 by means of vacuum deposition or printing.
- the first electrode 20 formed on the lower substrate 10 in the step S12 may be configured as a reflective electrode that reflects the light incident from the outside.
- the first electrode 20 may be made of metal film with good reflectivity so as to reflect the light incident from the outside.
- the metal film may be Al or its alloys.
- the piezoelectric film layer 30 may be made of materials with excellent piezoelectric characteristics by means of sputtering, laser abrasion, CVD, sol-gel method, and so on.
- the thickness of the piezoelectric film layer 30 formed on the first electrode 20 in the step S14 is controlled such that destructive interference occurs between the light reflected on the second electrode 40 and the light reflected on the first electrode 20 if a bias voltage is not applied to the first electrode 20 and the second electrode 40. Also, the thickness of the piezoelectric film layer 30 is controlled such that constructive interference occurs between the light reflected on the second electrode 40 and the light reflected on the first electrode 20 due to the change of thickness of the piezoelectric film layer 30 caused by the piezoelectric effect if a bias voltage is applied to the first electrode 20 and the second electrode 40.
- the second electrode 40 made of a transparent electrode transmitting the light incident from the outside and the light reflected on the first electrode 20 is formed on the piezoelectric film layer 30 (S16).
- Fig. 6 is a flowchart illustrating a method for manufacturing a reflection type display according to another embodiment.
- the lower substrate 50 is prepared (S20), and then the reflection film 60 reflecting the light incident from the outside is formed on the lower substrate 50 (S22).
- the lower substrate 50 prepared in the step S20 is made of glass or formed as a flexible substrate, and, in the step S22, the reflection film 60 may be formed on the lower substrate 50 by means of vacuum deposition or printing.
- the reflection film 60 formed on the lower substrate 50 in the step S22 may be made of metal film with high reflectivity so as to reflect the light incident from the outside.
- the metal film may include Al or its alloys.
- the piezoelectric film layer 70 changing its thickness depending on voltage is formed on the reflection film 60 (S24).
- the piezoelectric film layer 70 may be made of materials with excellent piezoelectric characteristics by means of sputtering, laser abrasion, CVD, sol-gel method, and so on.
- the thickness of the piezoelectric film layer 70 formed on the reflection film 60 in the step S24 is controlled such that destructive interference occurs between the light reflected on the reflection film 60 and the light reflected on the first and second electrodes 80, 90 if a bias voltage is not applied to the first electrode 80 and the second electrode 90. Also, the thickness of the piezoelectric film layer 70 is controlled such that constructive interference occurs between the light reflected on the reflection film 60 and the light reflected on the first and second electrodes 80, 90 due to the change of thickness of the piezoelectric film layer 70 caused by the piezoelectric effect if a bias voltage is applied to the first electrode 80 and the second electrode 90.
- the first electrode 80 and the second electrode 90 are formed on the piezoelectric film layer 70 to be spaced apart from each other in parallel (S26).
- the reflection type display disclosed herein provides constructive interference and destructive interference depending on thickness and refractive index of the piezoelectric film layer.
- the reflectivity of light depending on the intensity of electric field applied to the piezoelectric film layer of the reflection type display disclosed herein may be calculated as follows using the Fresnel equations.
- the reflectivity for the light with wavelength is calculated according to the following Equation 1.
- Equation 1 Equation 1, , , and . .
- the piezoelectric film layer is made of ZnO and the first electrode is made of Al
- the reflectivity depending on the thickness of the piezoelectric film layer made of ZnO is calculated according to Equation 1, and the results shown in Fig. 7 may be obtained.
- the reflectivity may be varied from 1% to 90%. In other words, an ON/OFF ratio becomes about 90, and the reflectivity may be sufficiently changed just with a small thickness change since the change of reflectivity depending on thickness is great.
- the reflectivity of about 90% gives a sufficient intensity of radiation, not expected in existing transmission type displays, so high brightness may be ensured with a small intensity of radiation (Actually, in case a transmission type display with color filters is employed, about 50% of light is absorbed, and thus, the intensity of radiation actually displayed is very low).
- reflection type display and the manufacturing method thereof disclosed herein are not limited to the above embodiments, but they may be changed or modified in various ways within the scope defined in the appended claims.
- the reflection type display disclosed herein controls the interference of light in a piezoelectric manner, so the reflectivity is greatly changed depending on the thickness of a piezoelectric material formed between two electrodes.
- the reflectivity may be sufficiently changed even with a small displacement, so it is possible to provide a display that ensures high brightness with a small intensity of radiation.
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Abstract
Description
Claims (8)
- A reflection type display, comprising:a lower substrate;a first electrode formed on the lower substrate;a piezoelectric film layer formed on the first electrode; anda second electrode formed on the piezoelectric film layer,wherein the piezoelectric film layer changes a thickness depending on the voltage applied to the first and second electrodes.
- The reflection type display according to claim 1, wherein the first electrode is made of a reflective electrode that reflects the light incident from the outside, and the second electrode is made of a transparent electrode that transmits the light incident from the outside and the light reflected on the first electrode.
- The reflection type display according to claim 1, wherein the thickness of the piezoelectric film layer is controlled such that:destructive interference occurs between the light reflected on the second electrode and the light reflected on the first electrode if a bias voltage is not applied to the first and the second electrodes; andconstructive interference occurs between the light reflected on the second electrode and the light reflected on the first electrode due to the change of thickness of the piezoelectric film layer caused by the piezoelectric effect if a bias voltage is applied to the first and the second electrodes.
- A reflection type display, comprising:a lower substrate;a reflection film formed on the lower substrate to reflect the light incident from the outside;a piezoelectric film layer formed on the reflection film; andfirst and second electrodes formed on the piezoelectric film layer to be spaced apart from each other in parallel,wherein the piezoelectric film layer changes a thickness depending on the voltage applied to the first and second electrodes.
- The reflection type display according to claim 4, wherein the first and second electrodes are made of electrodes that transmit the light incident from the outside and the light reflected on the reflection film.
- The reflection type display according to claim 4, wherein the thickness of the piezoelectric film layer is controlled such that:destructive interference occurs between the light reflected on the reflection film and the light reflected on the first and second electrodes if a bias voltage is not applied to the first and the second electrodes; andconstructive interference occurs between the light reflected on the reflection film and the light reflected on the first and second electrodes due to the change of thickness of the piezoelectric film layer caused by the piezoelectric effect if a bias voltage is applied to the first and the second electrodes.
- A method for manufacturing a reflection type display, comprising:preparing a lower substrate;forming a first electrode on the lower substrate, the first electrode being made of a reflective electrode that reflects the light incident from the outside;forming a piezoelectric film layer on the first electrode, the piezoelectric film changing a thickness depending on voltage; andforming a second electrode on the piezoelectric film layer, the second electrode being made of a transparent electrode that transmits the light incident from the outside and the light reflected on the first electrode.
- A method for manufacturing a reflection type display, comprising:preparing a lower substrate;forming a reflection film on the lower substrate, the reflection film reflecting the light incident from the outside;forming a piezoelectric film layer on the reflection film, the piezoelectric film changing a thickness depending on voltage; andforming first and second electrodes on the piezoelectric film layer to be spaced apart from each other in parallel, the first and second electrodes which could be made of electrodes that transmit the light incident from the outside and the light reflected on the reflection film.
Priority Applications (2)
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PCT/KR2009/002476 WO2010131784A1 (en) | 2009-05-11 | 2009-05-11 | Reflection type display and manufacturing method thereof |
KR1020117024773A KR101324658B1 (en) | 2009-05-11 | 2009-05-11 | Reflection type display and manufacturing method thereof |
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PCT/KR2009/002476 WO2010131784A1 (en) | 2009-05-11 | 2009-05-11 | Reflection type display and manufacturing method thereof |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019202761A1 (en) * | 2018-04-20 | 2019-10-24 | 株式会社村田製作所 | Spectrometer, imaging device, scanning device, and position measuring device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5105116A (en) * | 1989-05-31 | 1992-04-14 | Seikosha Co., Ltd. | Piezoelectric transducer and sound-generating device |
JPH0611711A (en) * | 1992-06-26 | 1994-01-21 | Sharp Corp | Reflection type liquid crystal display device |
JPH09265265A (en) * | 1996-03-27 | 1997-10-07 | Toshiba Corp | Reflection type display element |
JPH1096941A (en) * | 1996-09-25 | 1998-04-14 | Toshiba Corp | Liquid crystal display device |
JP2001042305A (en) * | 1999-08-03 | 2001-02-16 | Matsushita Electric Ind Co Ltd | Reflection type liquid crystal display panel |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100919535B1 (en) * | 2006-08-31 | 2009-10-01 | 삼성전기주식회사 | Diffractive optical modulator |
-
2009
- 2009-05-11 WO PCT/KR2009/002476 patent/WO2010131784A1/en active Application Filing
- 2009-05-11 KR KR1020117024773A patent/KR101324658B1/en active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5105116A (en) * | 1989-05-31 | 1992-04-14 | Seikosha Co., Ltd. | Piezoelectric transducer and sound-generating device |
JPH0611711A (en) * | 1992-06-26 | 1994-01-21 | Sharp Corp | Reflection type liquid crystal display device |
JPH09265265A (en) * | 1996-03-27 | 1997-10-07 | Toshiba Corp | Reflection type display element |
JPH1096941A (en) * | 1996-09-25 | 1998-04-14 | Toshiba Corp | Liquid crystal display device |
JP2001042305A (en) * | 1999-08-03 | 2001-02-16 | Matsushita Electric Ind Co Ltd | Reflection type liquid crystal display panel |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019202761A1 (en) * | 2018-04-20 | 2019-10-24 | 株式会社村田製作所 | Spectrometer, imaging device, scanning device, and position measuring device |
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KR101324658B1 (en) | 2013-11-04 |
KR20120017024A (en) | 2012-02-27 |
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