WO2010131736A1 - Boundary acoustic wave device and method for manufacturing same - Google Patents

Boundary acoustic wave device and method for manufacturing same Download PDF

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Publication number
WO2010131736A1
WO2010131736A1 PCT/JP2010/058183 JP2010058183W WO2010131736A1 WO 2010131736 A1 WO2010131736 A1 WO 2010131736A1 JP 2010058183 W JP2010058183 W JP 2010058183W WO 2010131736 A1 WO2010131736 A1 WO 2010131736A1
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linbo
cut angle
film thickness
thickness
total
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PCT/JP2010/058183
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French (fr)
Japanese (ja)
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三村　昌和
玉崎　大輔
毅 山根
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株式会社村田製作所
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Priority to JP2011513384A priority Critical patent/JP5136689B2/en
Publication of WO2010131736A1 publication Critical patent/WO2010131736A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02937—Means for compensation or elimination of undesirable effects of chemical damage, e.g. corrosion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02984—Protection measures against damaging

Definitions

  • the present invention relates to a boundary acoustic wave device using a boundary acoustic wave and a manufacturing method thereof, and more particularly, to a three-medium type boundary acoustic wave device and a manufacturing method thereof.
  • elastic wave devices have been used for RF filters and IF filters for mobile phones, VCO resonators, television VIF filters, and the like.
  • a surface acoustic wave device using a surface acoustic wave has been generally used as the surface acoustic wave device.
  • a boundary acoustic wave can be used because it can be made smaller than a surface acoustic wave device. Such boundary acoustic wave devices have come to be used.
  • the surface acoustic wave device uses surface acoustic waves that propagate with concentration of energy on the surface of the medium, so that a dielectric film is formed on the surface of the medium or the surface is etched. Therefore, it is possible to adjust the manufacturing variation of the frequency characteristics such as the resonance frequency and the center frequency relatively easily.
  • the boundary acoustic wave utilized by the boundary acoustic wave device is an acoustic wave that propagates while concentrating energy at the boundary between the media.
  • the boundary acoustic wave device the boundary acoustic wave is hardly affected by the state of the surface of the medium located in the uppermost layer, and a dielectric film is formed on the surface of the medium located in the uppermost layer, or the surface is etched.
  • the frequency characteristics cannot be adjusted.
  • the boundary acoustic wave device has a problem in that it is difficult to suppress manufacturing variations in frequency characteristics.
  • Patent Document 1 a three-medium type boundary acoustic wave device in which a second medium and a third medium are stacked in this order on a first medium made of a piezoelectric body.
  • the frequency characteristics and the like are adjusted by adjusting the thickness of the second medium, and then the third medium is formed.
  • the thickness of the second medium affects the sound speed of the higher-order mode as described in Patent Document 2 above.
  • the sound speed of the higher order mode affects the magnitude of the higher order mode spurious. For this reason, when the thickness of the second medium is different, the magnitude of the higher-order mode spurious is also different.
  • the size of the higher-order mode spurious becomes larger than the desired size depending on the thickness of the adjusted second medium. There is a case. Therefore, there has been a problem that the yield of the boundary acoustic wave device may decrease.
  • the present invention has been made in view of such points, and an object thereof is to provide a boundary acoustic wave device that can be produced with a high yield.
  • the present inventor has found that the change in the sound speed of the higher mode accompanying the change in the thickness of the second medium can be suppressed by setting the IDT electrode configuration to a predetermined configuration. Invented the invention.
  • the boundary acoustic wave device includes a first medium, a second medium, a third medium, and an IDT electrode.
  • the first medium is made of a piezoelectric body.
  • the second medium is formed on the first medium.
  • the second medium is made of a dielectric material.
  • the third medium is formed on the second medium.
  • the third medium is made of a dielectric.
  • the IDT electrode is formed at the boundary between the first medium and the second medium.
  • the sound velocity of the second medium is slower than the sound velocity of the first and third media.
  • the IDT electrode has a first electrode layer, a second electrode layer, and a third electrode layer.
  • the first electrode layer is formed on the first medium.
  • the second electrode layer is formed on the first electrode layer.
  • the third electrode layer is formed on the second electrode layer.
  • the density of the second electrode layer is lower than the density of the first and third electrode layers.
  • the boundary acoustic wave device according to the present invention satisfies 0.55 ⁇ h3 / (h1 + h3) ⁇ 0.95, where h1 is the thickness of the first electrode layer and h3 is the thickness of the third electrode layer.
  • the boundary acoustic wave device satisfies 0.70 ⁇ h3 / (h1 + h3) ⁇ 0.95. According to this configuration, the dependence of the magnitude of the higher-order mode spurious on the thickness of the second medium can be more effectively reduced.
  • the boundary acoustic wave device is configured such that the thickness of the second electrode layer is h2 and the wavelength of the boundary acoustic wave determined by the pitch of the IDT electrode is ⁇ . 0.05 ⁇ h2 / ⁇ ⁇ 0.25. According to this configuration, the effect of reducing the dependency of the size of the higher-order mode spurious on the thickness of the second medium is more suitably exhibited. When h2 / ⁇ is 0.05 or less, it may be difficult to obtain an effect of reducing the dependency of the magnitude of the higher-order mode spurious on the thickness of the second medium. On the other hand, when h2 / ⁇ is 0.25 or more, the electromechanical coupling coefficient becomes small, or the shape accuracy of the second and third media formed on the IDT electrode cannot be obtained sufficiently. There is.
  • the boundary acoustic wave device is configured such that the thickness of the second medium is H and the wavelength of the boundary acoustic wave determined by the pitch of the IDT electrode is ⁇ . 0.3 ⁇ H / ⁇ ⁇ 0.7 is satisfied. According to this configuration, the effect that the dependency of the size of the higher-order mode spurious on the thickness of the second medium can be further reduced is more preferably exhibited.
  • each of the first and third electrode layers is a metal selected from the group consisting of Au, Pt, W, Ta, Ag, and Cu, or Au , Pt, W, Ta, Ag, and Cu, and an alloy mainly composed of one or more metals selected from the group consisting of.
  • the second electrode layer is a metal selected from the group consisting of Al, Ti, Mg, Cr, Fe, Ni, Ag, and Cu, or Al, It consists of the alloy which has as a main component 1 or more types of metals chosen from the group which consists of Ti, Mg, Cr, Fe, Ni, Ag, and Cu.
  • each of the first and third electrode layers is made of Pt or an alloy containing Pt as a main component
  • the second electrode layer is made of Al or Al. It consists of an alloy containing the main component. According to this configuration, it is possible to achieve both low resistance of the IDT electrode and high reliability.
  • the second medium is made of silicon oxide. According to this configuration, the frequency temperature characteristic can be improved.
  • the first medium is made of LiNbO 3 .
  • the first medium is composed of a 0 ° -37 ° rotated Y-cut LiNbO 3 substrate
  • the boundary acoustic wave device is an SH type boundary acoustic wave. Is used. In this configuration, high-order mode spurious is likely to occur, and the present invention is particularly suitable.
  • the third medium is made of silicon, silicon nitride, silicon carbide, aluminum oxide, or aluminum nitride.
  • the third medium is made of silicon nitride. In this configuration, the third medium can be easily processed.
  • the boundary acoustic wave device further includes a dielectric layer formed between the first medium and the IDT electrode. According to this configuration, surge resistance can be improved.
  • the first medium is made of a LiNbO 3 substrate
  • each of the first and third electrode layers is made of Pt
  • the second electrode layer is made of It is made of Al
  • the second medium is made of a SiO 2 film
  • the cut angles of the (h1 + h3), h3 / (h1 + h3), h2, H, and LiNbO 3 substrates are any of the following first to third groups: It is a combination of.
  • the method for manufacturing a boundary acoustic wave device according to the present invention is a method for manufacturing the boundary acoustic wave device according to the present invention, wherein the third medium is adjusted after adjusting the frequency characteristics by adjusting the thickness of the second medium.
  • the boundary acoustic wave device is a three-medium type boundary acoustic wave device having first to third media
  • the IDT electrode includes the first and third electrode layers, the first and third electrodes.
  • a second electrode layer located between the electrode layers and having a lower density than the first and third electrode layers, the thickness of the first electrode layer being h1, and the third electrode layer
  • the thickness of h3 is h3, 0.55 ⁇ h3 / (h1 + h3) ⁇ 0.95. For this reason, the dependence of the sound speed of the higher-order mode on the thickness of the second medium is low.
  • the thickness of the second medium changes, the sound speed of the higher-order mode hardly changes, and the magnitude of the higher-order mode spurious does not easily change as the thickness of the second medium changes. Therefore, even when the thickness of the second medium is adjusted in order to adjust the frequency characteristics and the like, it is effectively suppressed that the size of the higher-order mode spurious becomes larger than the desired size. Therefore, it is difficult for defects relating to frequency characteristics and the like to occur, and defects relating to the magnitude of higher-order mode spurs are less likely to occur. As a result, boundary acoustic wave devices can be manufactured with a high yield.
  • FIG. 1 is a schematic cross-sectional view of a boundary acoustic wave device according to a first embodiment.
  • FIG. 2 is a graph showing the relationship between the thickness (H) of the second medium and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.30.
  • FIG. 3 is a graph showing the relationship between the thickness (H) of the second medium and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.55.
  • FIG. 4 is a graph showing the relationship between the thickness (H) of the second medium and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.70.
  • FIG. 1 is a schematic cross-sectional view of a boundary acoustic wave device according to a first embodiment.
  • FIG. 2 is a graph showing the relationship between the thickness (H) of the second medium and the sound speed of the higher-order mode when h3 / (h1 + h3)
  • FIG. 5 is a graph showing the relationship between the thickness (H) of the second medium and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.90.
  • FIG. 6 is a graph showing the relationship between the thickness (H) of the second medium and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.95.
  • FIG. 7 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07 ⁇ and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship.
  • FIG. 8 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07 ⁇ and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship.
  • FIG. 9 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07 ⁇ and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship.
  • FIG. 10 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07 ⁇ and h3 / (h1 + h3) is 0.90.
  • FIG. 11 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07 ⁇ and h3 / (h1 + h3) is 0.95.
  • FIG. 12 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship.
  • FIG. 11 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07 ⁇ and h3 / (h1 + h3) is 0.95.
  • FIG. 12 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship.
  • FIG. 13 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship.
  • FIG. 14 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship.
  • FIG. 15 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.90.
  • FIG. 16 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship.
  • FIG. 17 shows that the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04 ⁇ , the thickness (h2) of the second electrode layer 22 is 0.14 ⁇ , and h3 / (h1 + h3).
  • 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.30.
  • FIG. 16 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.95.
  • FIG. 17 shows that the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04
  • the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04 ⁇
  • the thickness (h2) of the second electrode layer 22 is 0.14 ⁇
  • 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.55.
  • the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04 ⁇
  • the thickness (h2) of the second electrode layer 22 is 0.14 ⁇
  • 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when is 0.70.
  • FIG. 19 the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04 ⁇
  • the thickness (h2) of the second electrode layer 22 is 0.14 ⁇
  • 6 is a graph showing the relationship
  • the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04 ⁇
  • the thickness (h2) of the second electrode layer 22 is 0.14 ⁇
  • 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.90.
  • FIG. 21 shows that the total thickness (h1 + h3) of the first and third electrode layers 21, 23 is 0.04 ⁇
  • the thickness (h2) of the second electrode layer 22 is 0.14 ⁇
  • 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.95.
  • FIG. 21 shows that the total thickness (h1 + h3) of the first and third electrode layers 21, 23 is 0.04 ⁇
  • the thickness (h2) of the second electrode layer 22 is 0.14 ⁇
  • 6 is
  • FIG. 22 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 23 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 23 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 24 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 25 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 25 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 26 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 27 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 27 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 28 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 29 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 29 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 30 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 31 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 32 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 33 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 33 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 34 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 35 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 35 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 36 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 37 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 37 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 38 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 39 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 39 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 40 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 41 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 40 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 41 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al
  • FIG. 42 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 43 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 43 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 44 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 45 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 45 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 46 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode.
  • FIG. 47 is a graph showing impedance (Z) characteristics when a 37 ° Y-cut LiNbO 3 substrate is used as the first medium.
  • FIG. 48 is a graph showing phase characteristics when a 37 ° Y-cut LiNbO 3 substrate is used as the first medium.
  • FIG. 49 is a graph showing impedance (Z) characteristics when a 0 ° Y-cut LiNbO 3 substrate is used as the first medium.
  • FIG. 50 is a graph showing phase characteristics when a 0 ° Y-cut LiNbO 3 substrate is used as the first medium.
  • FIG. 51 is a schematic cross-sectional view of a boundary acoustic wave device according to the second embodiment.
  • FIG. 52 is a schematic cross-sectional view of an IDT electrode in a boundary acoustic wave device according to a third embodiment.
  • FIG. 53 is a schematic cross-sectional view of an IDT electrode in a boundary acoustic wave device according to a fourth embodiment.
  • FIG. 54 is a schematic cross-sectional view of a boundary acoustic wave device according to a fifth embodiment.
  • FIG. 51 is a schematic cross-sectional view of a boundary acoustic wave device according to the second embodiment.
  • FIG. 52 is a schematic cross-sectional view of an IDT electrode in a boundary acoustic wave device according to a third embodiment.
  • FIG. 53 is a schematic cross-sectional view of
  • the SiO 2 film thickness (H) is 0.40 ⁇
  • the ratio (h3 / (h1 + h3)) to the total Pt film thickness of the first Pt film is 0.45
  • the Al film thickness (h2) Is the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness (h1 + h3) is 0.02 ⁇ , 0.025 ⁇ , or 0.03 ⁇ .
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.45
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.45
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 57 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.50
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 59 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.50
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.50
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 60 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.55
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 62 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.55
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.55
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 63 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.45
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 65 the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.45
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.45
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.50
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.50
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 68 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.50
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 70 the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.55
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.55
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.55
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.45
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 73 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.45
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 75 the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.45
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.50
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.50
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.50
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 78 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.55
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 80 the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.55
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.55
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.75
  • the Al film thickness is 0.06 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.75
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 83 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.75
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 85 the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.06 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.06 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 88 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.75
  • the Al film thickness is 0.06 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.75
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.75
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 93 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.06 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 95 the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.06 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.45 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 100 the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.75
  • the Al film thickness is 0.06 ⁇
  • the total Pt film thickness is 0. It is a figure which shows the relationship between the cut angle in the case of 0.02 ⁇ , 0.025 ⁇ , or 0.03 ⁇ and the SV wave ratio band.
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.75
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.75
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.06 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 105 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.06 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 107 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.50 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • FIG. 108 shows that the SiO 2 film thickness is 0.50 ⁇ , the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.10 ⁇ , and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.30 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.30 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.30 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 111 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.30 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.30 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.30 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.30 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.90
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.30 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.90
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 116 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.30 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.90
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.35 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • FIG. 119 shows that the SiO 2 film thickness is 0.35 ⁇ , the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.10 ⁇ , and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • FIG. 119 shows that the SiO 2 film thickness is 0.35 ⁇ , the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.10 ⁇ , and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.35 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.35 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.35 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.35 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.35 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.90
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 124 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.35 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.90
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 126 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.35 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.90
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 127 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.80
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.85
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 132 is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.90
  • the Al film thickness is 0.08 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.90
  • the Al film thickness is 0.10 ⁇
  • the total Pt film thickness is 0.
  • .02Ramuda is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025 ⁇ or 0.03.
  • the SiO 2 film thickness is 0.40 ⁇
  • the ratio of the first Pt film to the total Pt film thickness is 0.90
  • the Al film thickness is 0.12 ⁇
  • the total Pt film thickness is 0. .02Ramuda
  • FIG. 136 is a diagram showing the relationship between the thickness of the Al film as the fourth electrode layer and the frequency temperature coefficient TCF in the seventh embodiment of the present invention.
  • boundary acoustic wave apparatus 1 may be a boundary acoustic wave resonator, for example, and may be a boundary acoustic wave filter apparatus.
  • the boundary acoustic wave device 1 includes a first medium 11, a second medium 12, and a third medium 13.
  • the first medium 11 is made of a piezoelectric body.
  • the type of the piezoelectric body that constitutes the first medium 11 is not particularly limited.
  • the first medium 11 can be composed of, for example, a LiNbO 3 substrate such as a 0 ° to 37 ° rotated Y-cut LiNbO 3 substrate, a LiTaO 3 substrate, or the like.
  • a second medium 12 is formed on the first medium 11. Furthermore, a third medium 13 is formed on the second medium 12.
  • Each of the second and third media 12 and 13 is made of a dielectric.
  • the forming materials of the second and third media 12 and 13 are selected so that the sound speed of the second medium 12 is slower than the sound speed of the first and third media 11 and 13.
  • the second medium 12 is made of silicon oxide such as SiO 2
  • the third medium 13 is silicon, silicon nitride, silicon oxynitride, silicon carbide, aluminum oxide, aluminum nitride, diamond-like carbon (DLC). Or the like.
  • the second medium 12 is made of silicon oxide, the frequency temperature characteristics can be improved.
  • the third medium 13 is more preferably made of silicon nitride such as SiN. In this case, it is because processing becomes easy.
  • the thickness of the second and third media 12 and 13 is not particularly limited.
  • the thickness of the second medium 12 is preferably in the range of 0.3 ⁇ to 0.7 ⁇ , where ⁇ is the wavelength of the boundary acoustic wave generated in the IDT electrode 20 described later.
  • ⁇ is the wavelength of the boundary acoustic wave generated in the IDT electrode 20 described later.
  • the thickness of the second medium 12 is H, it is preferable that 0.3 ⁇ H / ⁇ ⁇ 0.7 is satisfied.
  • the thickness of the third medium 13 is preferably such that the amount of displacement of the elastic wave on the surface of the third medium 13 is substantially zero.
  • the thickness of the third medium 13 is preferably in the range of 0.6 ⁇ to 2 ⁇ , for example.
  • the thickness of the first medium 11 is also preferably such that the amount of elastic wave displacement on the surface of the first medium 11 is substantially zero.
  • the method for forming the second and third media 12 and 13 is not particularly limited.
  • the second and third media can be formed using a sputtering method, a vapor deposition method, a CVD method, a spin coating method, a bonding method, or the like. 12, 13 can be formed.
  • An IDT electrode 20 is formed at the boundary between the first medium 11 and the second medium 12.
  • a dielectric layer 14 made of tantalum oxide such as Ta 2 O 5 is formed between the IDT electrode 20 and the first medium 11.
  • surge resistance can be improved.
  • the dielectric layer 14 is not essential, and the IDT electrode 20 may be formed directly on the first medium 11.
  • the IDT electrode 20 has at least three electrode layers stacked. Specifically, the IDT electrode 20 includes a first electrode layer 21 formed on the first medium 11, and a second electrode layer 22 formed on the first electrode layer 21. And a third electrode layer 23 formed on the second electrode layer 22. Of the first to third electrode layers 21 to 23, the upper and lower first and third electrode layers 21 and 23 have a relatively high density. On the other hand, the density of the second electrode layer 22 positioned between the first and third electrode layers 21 and 23 is lower than that of the first and third electrode layers 21 and 23, respectively.
  • the forming material of the first to third electrode layers 21 to 23 is not particularly limited as long as the density of the second electrode layer 22 is lower than the density of the first and third electrode layers 21 and 23.
  • Each of the first and third electrode layers 21 and 23 is made of, for example, a metal selected from the group consisting of Au, Pt, W, Ta, Ag, and Cu, or Au, Pt, W, Ta, Ag, and Cu. You may consist of an alloy which has as a main component 1 or more types of metals chosen from the group.
  • the second electrode layer 22 is a metal selected from the group consisting of Al, Ti, Mg, Cr, Fe, Ni, Ag and Cu, or a group consisting of Al, Ti, Mg, Cr, Fe, Ni, Ag and Cu.
  • each of the first and third electrode layers 21 and 23 is made of Pt or an alloy containing Pt as a main component
  • the second electrode layer 22 is made of Al or an alloy containing Al as a main component. Is preferred. In this case, it is possible to achieve both low resistance and high reliability of the IDT electrode 20.
  • the sound speed of the higher order mode also changes when the thickness of the second medium 12 changes.
  • the ease of leakage to the first and third media 11 and 13 in the higher order mode also changes.
  • the magnitude of higher order mode spurs also changes. Specifically, when the sound speed of the higher-order mode is increased, the higher-order mode is liable to leak to the first and third media 11 and 13, and the magnitude of the higher-order mode spurious is reduced.
  • the higher-order mode when the sound speed of the higher-order mode becomes slower, the higher-order mode is confined to the second medium and is less likely to leak into the first and third media 11 and 13, and the magnitude of the higher-order mode spurious increases. Therefore, when the frequency characteristic or the like is adjusted by adjusting the thickness of the second medium 12, the size of the higher-order mode spurious becomes larger than a desired size, and the obtained boundary acoustic wave device may be defective. . As a result, the yield of the boundary acoustic wave device may decrease.
  • the present inventor can suppress the change in the sound speed of the higher-order mode accompanying the change in the thickness of the second medium 12 by devising the film configuration of the IDT electrode 20. I found.
  • the boundary acoustic wave device of the present embodiment has been conceived in which the frequency characteristics and the like can be adjusted by adjusting the thickness of the second medium 12 without greatly changing the magnitude of the higher-order mode spurious. .
  • this will be described in more detail based on a specific example.
  • the inventor examined the relationship between the thickness of the second medium 12 and the sound speed of the higher-order mode by changing h3 / (h1 + h3) variously in the boundary acoustic wave device having the following design parameters. The results are shown in FIGS.
  • First medium 11 20 ° Y-cut X-propagation LiNbO 3 substrate
  • Second medium SiO 2 film
  • Third medium SiN film
  • Third medium thickness 1.0 ⁇ Wavelength ( ⁇ ) determined by the electrode finger pitch of the IDT electrode 20: 1.9 ⁇ m
  • Material of the first and third electrode layers 21 and 23 Pt Material of the second electrode layer 22: Al Sum of the thickness of the first electrode layer 21 and the thickness of the third electrode layer 23 (h1 + h3): 0.06 ⁇ Thickness (h2) of second electrode layer 22: 0.14 ⁇
  • FIG. 2 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher order mode when h3 / (h1 + h3) is 0.30.
  • FIG. 3 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.55.
  • FIG. 4 is a graph showing the relationship between the thickness (H) of the second medium 12 and the speed of sound in the higher mode when h3 / (h1 + h3) is 0.70.
  • FIG. 5 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.90.
  • FIG. 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.95.
  • the sound speed of the higher-order mode greatly changes with the change in the thickness (H) of the second medium 12. Specifically, it can be seen that as the thickness (H) of the second medium 12 increases, the sound speed of the higher-order mode rapidly decreases. From this result, for example, when the thickness (H) of the second medium 12 is reduced in order to adjust the frequency characteristics and the like, the magnitude of the higher-order mode spurious is reduced, but the second medium 12 It can be seen that when the thickness (H) is increased, the magnitude of the higher-order mode spurious increases.
  • the range of the thickness (H) of the second medium 12 that can be adjusted for adjusting the frequency characteristics is narrow, and in some cases, the frequency characteristics are preferable. In some cases, the adjustment cannot be made.
  • the thickness (H) of the second medium 12 is adjusted to be large for adjusting the frequency characteristics and the like, the magnitude of the higher-order mode spurious becomes too large and may be defective. Therefore, the yield of the boundary acoustic wave device is lowered.
  • the thickness (H) of the second medium 12 can be freely changed to adjust the frequency characteristics and the like. Therefore, even when the thickness (H) of the second medium 12 is largely changed, it is possible to effectively suppress the size of the high-order mode spurious from becoming too large. Therefore, the boundary acoustic wave device 1 can be manufactured with a high yield.
  • h3 / (h1 + h3) is set to be greater than 0.7, it is possible to more effectively suppress the change in the sound speed of the higher mode with the change in the thickness (H) of the second medium 12. Therefore, by setting 0.7 ⁇ h3 / (h1 + h3) ⁇ 0.95, the boundary acoustic wave device 1 can be manufactured with a higher yield.
  • the thickness (H) of the second medium 12 is set to 0.3 ⁇ H / ⁇ ⁇ 0.7 while h3 / (h1 + h3) is in a predetermined range.
  • the thickness (H) of the second medium 12 is preferably 0.3 ⁇ to 0.7 ⁇ .
  • FIG. 7 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07 ⁇ and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship.
  • FIG. 8 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07 ⁇ and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship.
  • FIG. 9 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07 ⁇ and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship.
  • FIG. 10 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07 ⁇ and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship.
  • FIG. 11 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07 ⁇ and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship.
  • FIG. 12 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship.
  • FIG. 13 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship.
  • FIG. 14 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship.
  • FIG. 15 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship.
  • FIG. 16 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20 ⁇ and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship.
  • FIG. 17 shows that the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04 ⁇ , the thickness (h2) of the second electrode layer 22 is 0.14 ⁇ , and h3 / (h1 + h3).
  • 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.30.
  • the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04 ⁇
  • the thickness (h2) of the second electrode layer 22 is 0.14 ⁇
  • 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.55.
  • the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04 ⁇
  • the thickness (h2) of the second electrode layer 22 is 0.14 ⁇
  • 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when is 0.70.
  • the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04 ⁇
  • the thickness (h2) of the second electrode layer 22 is 0.14 ⁇
  • 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.90.
  • FIG. 21 shows that the total thickness (h1 + h3) of the first and third electrode layers 21, 23 is 0.04 ⁇ , the thickness (h2) of the second electrode layer 22 is 0.14 ⁇ , and h3 / (h1 + h3).
  • 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.95.
  • the thickness (H) of the second medium 12 is set to 0.3 ⁇ H / ⁇ ⁇ 0 while h3 / (h1 + h3) is within a predetermined range. .7, it is possible to particularly effectively suppress the change in the sound speed of the higher-order mode accompanying the change in the thickness (H) of the second medium 12. Therefore, it can be seen that the thickness (H) of the second medium 12 is preferably 0.3 ⁇ to 0.7 ⁇ regardless of the thickness of the second electrode layer 22.
  • the thickness (h2) of the second electrode layer 22 is preferably in the range of 0.05 ⁇ to 0.25 ⁇ . If the thickness (h2) of the second electrode layer 22 is too small, the dependency of the magnitude of higher-order mode spurious on the thickness (H) of the second medium 12 may not be sufficiently reduced. In addition, the frequency temperature characteristic may be deteriorated. On the other hand, if the thickness (h2) of the second electrode layer 22 is too large, the electromechanical coupling coefficient becomes too small, or the thickness of the IDT electrode 20 becomes too thick, and the shape of the third medium 13 becomes poor. There is a case.
  • the materials of the first to third electrode layers 21 to 23 were variously changed, and the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode was examined.
  • the results are shown in FIGS. 22 to 46, the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.06 ⁇ , and the thickness (h2) of the second electrode layer 22 is 0.14 ⁇ . It is.
  • first electrode layer 21 Au / second electrode layer: Al / third electrode layer: Au 27 to 31: first electrode layer 21: W / second electrode layer: Al / third electrode layer: W 32 to 36: first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta 37 to 41: First electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu FIGS. 42 to 46: First electrode layer 21: Pt / second electrode layer : Cu / third electrode layer: Pt H3 / (h1 + h3) in FIGS. 22, 27, 32, 37 and 42: 0.30 H3 / (h1 + h3) in FIGS.
  • the thickness (H) of the second medium 12 is set to 0.3 ⁇ H / ⁇ while h3 / (h1 + h3) is within a predetermined range. By setting it to ⁇ 0.7, it can suppress especially effectively that the sound speed of a higher mode changes with the thickness (H) of the 2nd medium 12 changing. Therefore, it is understood that the thickness (H) of the second medium 12 is preferably 0.3 ⁇ to 0.7 ⁇ regardless of the material of the first to third electrode layers 21 and 23.
  • FIG. 47 is a graph showing impedance (Z) characteristics when a 37 ° Y-cut LiNbO 3 substrate is used as the first medium.
  • FIG. 48 is a graph showing phase characteristics when a 37 ° Y-cut LiNbO 3 substrate is used as the first medium.
  • FIG. 49 is a graph showing impedance (Z) characteristics when a 0 ° Y-cut LiNbO 3 substrate is used as the first medium.
  • FIG. 50 is a graph showing phase characteristics when a 0 ° Y-cut LiNbO 3 substrate is used as the first medium.
  • FIG. 51 is a schematic cross-sectional view of a boundary acoustic wave device according to the second embodiment.
  • the IDT electrode 20 further includes a fourth electrode layer 24 formed on the first to third electrode layers 21 to 23.
  • the resistance of the IDT electrode 20 can be further reduced. Therefore, the loss of the boundary acoustic wave device can be further reduced.
  • the fourth electrode layer 24 is formed of a material having a low electrical resistance, more specifically, a material having an electrical resistance equal to or lower than that of the materials of the first to third electrode layers 21 to 23.
  • the fourth electrode layer 24 is preferably formed of Al or an alloy containing Al as a main component.
  • the fourth electrode layer 24 is formed of Al
  • the second medium 12 is made of silicon oxide such as SiO 2 . Since Al and silicon oxide have elastic constants and densities close to each other, even if the fourth electrode layer 24 is added, the sound velocity of the fundamental mode, the electromechanical coupling coefficient, the sound velocity of the higher mode, etc. The acoustic characteristics are difficult to change. For this reason, the resistance of the IDT electrode 20 can be effectively reduced without changing the acoustic characteristics.
  • FIG. 52 is a schematic cross-sectional view of an IDT electrode in a boundary acoustic wave device according to a third embodiment.
  • layers 25a to 25d for improving adhesion and suppressing diffusion may be further provided.
  • Each of the layers 25a to 25d may be formed of, for example, a metal such as Ti, Ni, or Cr, or an alloy mainly composed of one or more metals selected from the group consisting of Ti, Ni, and Cr. it can.
  • FIG. 53 is a schematic cross-sectional view of an IDT electrode in a boundary acoustic wave device according to a fourth embodiment.
  • each of the first to third electrode layers 21 to 23 is formed of a single electrode layer.
  • the present invention is not limited to this configuration.
  • at least one of the first to third electrode layers 21 to 23 may be composed of a plurality of layers.
  • another layer may be interposed between a plurality of layers constituting the electrode layer.
  • at least one of the first to third electrode layers 21 to 23 may be divided into a plurality of layers by other layers, for example.
  • the second electrode layer 22 is divided into three layers by layers 22a and 22b made of Ti or Cu.
  • FIG. 54 is a schematic cross-sectional view of a boundary acoustic wave device according to a fifth embodiment.
  • the surface of the second medium 12 has a shape corresponding to the shape of the IDT electrode 20. It may be said.
  • the surface of the third medium 13 may be shaped according to the shape of the IDT electrode 20.
  • the first medium is a LiNbO 3 substrate
  • the second medium is a SiO 2 film
  • the cut angle of LiNbO 3 the thickness of each metal film in the IDT electrode
  • the SiO 2 film in the first embodiment It differs from the first embodiment in that the thickness of the two films is in a specific range.
  • spurious due to the response of the Stoneley wave can be effectively suppressed. This will be described based on a specific experimental example.
  • the first group to the third group are LiNbO 3 cut angles, Pt film thickness total (h1 + h3), and upper Pt film thickness / Pt film thickness total (h3 / () suitable for use in a specific filter, respectively. h1 + h3)), the thickness of the Al film (h2), and the central value of each parameter of the SiO 2 film (H).
  • the first group to the third group are groups having parameters around the center value. Details will be explained for each group.
  • the SV wave specific band in this application is used in the meaning of the specific band of the Stoneley wave which is a boundary wave mainly composed of SV waves.
  • FIGS. 55 to 63 show results when the thickness of the SiO 2 film is 0.40 ⁇ .
  • 55 to 57 show the results when the upper Pt film thickness / Pt film thickness is 0.45
  • FIGS. 58 to 60 are 0.50
  • FIGS. 61 to 63 are 0.55.
  • the thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ .
  • the thickness of the Al film is 0.08 ⁇
  • the thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ in FIGS. 61 to 63.
  • 55 to 63 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed to 0.02 ⁇ , 0.025 ⁇ , or 0.03 ⁇ . Has been.
  • FIGS. 64 to 72 show the results when the thickness of the SiO 2 film is 0.45 ⁇ .
  • FIGS. 64 to 66 show the results when the upper Pt film thickness / Pt film thickness is 0.45
  • FIGS. 67 to 69 are 0.50
  • FIGS. 70 to 72 are 0.55.
  • the film thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ .
  • the film thickness of the Al film is 0.08 ⁇
  • the thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ in FIGS. 70 to 72 as well.
  • 64 to 72 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed.
  • FIGS. 73 to 81 show results when the thickness of the SiO 2 film is 0.50 ⁇ .
  • FIGS. 73 to 75 show the results when the upper Pt film thickness / Pt film thickness is 0.45
  • FIGS. 76 to 78 are 0.50
  • FIGS. 79 to 81 are 0.55.
  • the film thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ .
  • the film thickness of the Al film is 0.08 ⁇
  • the thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ in FIGS. 79 to 81 as well.
  • (Second group) 82 to 108 show a cut angle of LiNbO 3 of 25 °, a total Pt film thickness of 2.72% (ratio to wavelength), an upper Pt film thickness / total Pt film thickness of 0.78, and an Al film thickness of 7.9. % (versus wavelength ratio), and the center 45.6% the thickness of the SiO 2 film (versus wavelength ratio) is a diagram showing the relationship between the parameters and SV wave ratio band.
  • FIGS. 82 to 90 show results when the thickness of the SiO 2 film is 0.40 ⁇ .
  • FIGS. 82 to 84 show the results when the upper Pt film thickness / Pt film thickness is 0.75
  • FIGS. 85 to 87 are 0.80
  • FIGS. 88 to 90 are 0.85.
  • the film thickness of the Al film is 0.06 ⁇ , 0.08 ⁇ , or 0.10 ⁇ .
  • the film thickness of the Al film is 0.06 ⁇
  • the thickness of the Al film is 0.06 ⁇ , 0.08 ⁇ , or 0.10 ⁇ in FIGS. 88 to 90.
  • FIGS. 91 to 99 show results when the thickness of the SiO 2 film is 0.45 ⁇ .
  • FIGS. 91 to 93 show the results when the upper Pt film thickness / Pt film thickness is 0.75
  • FIGS. 94 to 96 are 0.80
  • FIGS. 97 to 99 are 0.85.
  • the thickness of the Al film is 0.06 ⁇ , 0.08 ⁇ , or 0.10 ⁇ .
  • the thickness of the Al film is 0.06 ⁇
  • the thickness of the Al film is 0.06 ⁇ , 0.08 ⁇ , or 0.10 ⁇ in FIGS. 97 to 99.
  • FIGS. 100 to 108 show the results when the thickness of the SiO 2 film is 0.50 ⁇ .
  • FIGS. 100 to 102 show the results when the upper Pt film thickness / Pt film thickness is 0.75
  • FIGS. 103 to 105 are 0.80
  • FIGS. 106 to 108 are 0.85.
  • the thickness of the Al film is 0.06 ⁇ , 0.08 ⁇ , or 0.10 ⁇ .
  • the thickness of the Al film is 0.06 ⁇
  • the thickness of the Al film is 0.06 ⁇ , 0.08 ⁇ , or 0.10 ⁇ in FIGS. 106 to 108 as well.
  • 100 to 108 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed.
  • FIGS. 82 to 108 are summarized as follows.
  • 0.55 ⁇ h3 / (h1 + h3) ⁇ 0.95 the range in which the SV wave ratio band is 0.03% or less, that is, spurious due to the Stoneley wave. It can be seen that the range in which can be suppressed is a combination of any of the following (c1) to (c81).
  • (Third group) 109 to 135 show a cut angle of LiNbO 3 of 25 °, a total Pt film thickness of 2.53% (vs. wavelength ratio), an upper Pt film thickness / total Pt film thickness of 0.86, and an Al film thickness of 9.0. % (versus wavelength ratio), and the center 36.3% the thickness of the SiO 2 film (versus wavelength ratio) is a diagram showing the relationship between the parameters and SV wave ratio band.
  • FIGS. 109 to 117 show results when the thickness of the SiO 2 film is 0.30 ⁇ .
  • FIGS. 109 to 111 show the results when the upper Pt film thickness / Pt film thickness is 0.80, FIGS. 112 to 114 are 0.85, and FIGS. 115 to 117 are 0.90.
  • the thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ .
  • the thickness of the Al film is 0.08 ⁇
  • the thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ in FIGS. 115 to 117 as well.
  • the thickness of the SiO 2 film shows the results when the 0.35Ramuda.
  • FIGS. 118 to 120 show the results when the upper Pt film thickness / Pt film thickness is 0.80
  • FIGS. 121 to 123 are 0.85
  • FIGS. 124 to 126 are 0.90.
  • the thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ .
  • the thickness of the Al film is 0.08 ⁇
  • the thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ in FIGS. 124 to 126 as well.
  • 127 to 135 show the results when the thickness of the SiO 2 film is 0.40 ⁇ .
  • 127 to 129 show the results when the upper Pt film thickness / Pt film thickness is 0.80, FIGS. 130 to 132 are 0.85, and FIGS. 133 to 135 are 0.90.
  • the film thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ .
  • the film thickness of the Al film is 0.08 ⁇
  • the thickness of the Al film is 0.08 ⁇ , 0.10 ⁇ , or 0.12 ⁇ in FIGS. 133 to 135 as well.
  • 127 to 135 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed.
  • the seventh embodiment is similar to the sixth embodiment in that a fourth electrode layer 24 is formed on the first to third electrode layers 21 to 23. And different.
  • FIG. 136 is a diagram showing a change in the frequency temperature coefficient TCF when the thickness of the Al film that is the fourth electrode layer 24 is changed in the seventh embodiment.
  • SiO 2 has a positive frequency temperature coefficient TCF.
  • LiNbO 3 has a negative frequency temperature coefficient.
  • LiNbO 3 frequency temperature coefficient TCF of the boundary acoustic wave device formed by laminating a SiO 2 substrate indicates the negative value of the intermediate of SiO 2 film and the LiNbO 3 substrate.
  • the absolute value of the frequency temperature coefficient TCF tends to increase as the thickness of the Al film as the fourth electrode layer 24 increases.
  • the absolute value of the frequency temperature coefficient TCF is increased.
  • the frequency temperature coefficient TCF slightly deteriorates as the thickness of the Al film as the fourth electrode layer 24 is increased.
  • the frequency temperature coefficient TCF is about 2 ppm / ° C. compared to the case where the Al film as the fourth electrode layer 24 is not formed. It turns out that it has deteriorated.
  • the thickness of the Al film as the fourth electrode layer 24 is 0.1 ⁇ or less, the deterioration of the frequency temperature coefficient TCF can be within 2 ppm / ° C.
  • the thickness of the Al film that is the fourth electrode layer 24 is set to 0.1 ⁇ or less.
  • a dielectric layer 14 made of tantalum oxide such as Ta 2 O 5 may be formed between the IDT electrode 20 and the first medium 11.
  • the thickness of the dielectric layer 14 is desirably thick to some extent in order to improve surge resistance, but if the thickness of the dielectric layer 14 is too thick, the electromechanical coupling coefficient may be reduced. Therefore, the thickness of the dielectric layer 14 is preferably about 0.03 ⁇ or less. In addition, a decrease in the electromechanical coupling coefficient is suppressed as the dielectric constant of the dielectric layer 14 is increased. Therefore, a material having a high dielectric constant is desirable for the dielectric layer 14.
  • the material constituting the dielectric layer 14 for improving the surge resistance is not limited to tantalum oxide, and various dielectric materials having a dielectric constant of about 10 or more can be used. That is, preferably, the dielectric layer 14 is formed of one kind of dielectric material selected from the group consisting of tantalum oxide, titanium oxide, and aluminum oxide having such a dielectric constant. It is particularly preferable to use tantalum oxide because of its high dielectric constant and high insulation resistance.
  • a Ti film or NiCr film is laminated on the lower surface side of the Al film as the fourth electrode layer 24 to prevent metal diffusion.
  • the adhesion between the metal films may be increased.
  • the thickness of these other metal films is preferably not so large as not to affect the electrical characteristics, and is preferably as thin as, for example, about 20 nm or less.
  • the Al film may be divided into a plurality of Al films.
  • the Al film itself may have a structure in which a plurality of Al films are stacked.
  • the Al film and the Pt film may be formed of an alloy mainly composed of Al or Pt.

Abstract

Disclosed is a boundary acoustic wave device which can be manufactured with high yield. Specifically disclosed is a boundary acoustic wave device (1) which comprises a first medium (11) that is formed of a piezoelectric body, a second medium (12) that is formed of a dielectric body, a third medium (13) that is formed of a dielectric body, and an IDT electrode (20) that is formed in the boundary between the first medium (11) and the second medium (12). The acoustic velocity of the second medium (12) is lower than the acoustic velocities of the first and third media (11, 13). The IDT electrode (20) has a first electrode layer (21), a second electrode layer (22) and a third electrode layer (23). The density of the second electrode layer (22) is lower than the densities of the first and third electrode layers (21, 23). When the thickness of the first electrode layer (21) is represented by h1 and the thickness of the third electrode layer (23) is represented by h3, the boundary acoustic wave device (1) satisfies the following relation: 0.55 < h3/(h1 + h3) < 0.95.

Description

弾性境界波装置及びその製造方法Boundary acoustic wave device and manufacturing method thereof
　本発明は、弾性境界波を利用する弾性境界波装置及びその製造方法に関し、詳細には、３媒質型の弾性境界波装置及びその製造方法に関する。 The present invention relates to a boundary acoustic wave device using a boundary acoustic wave and a manufacturing method thereof, and more particularly, to a three-medium type boundary acoustic wave device and a manufacturing method thereof.
　従来、携帯電話用のＲＦフィルタやＩＦフィルタ、ＶＣＯ用共振子、テレビジョン用ＶＩＦフィルタなどに弾性波装置が用いられている。弾性波装置としては、従来、弾性表面波を利用した弾性表面波装置が一般的に用いられていたが、近年、弾性表面波装置よりも小型化が可能であることより、弾性境界波を利用した弾性境界波装置が用いられるようになってきている。 Conventionally, elastic wave devices have been used for RF filters and IF filters for mobile phones, VCO resonators, television VIF filters, and the like. Conventionally, a surface acoustic wave device using a surface acoustic wave has been generally used as the surface acoustic wave device. However, in recent years, a boundary acoustic wave can be used because it can be made smaller than a surface acoustic wave device. Such boundary acoustic wave devices have come to be used.
　ところで、弾性表面波装置は、媒質の表面にエネルギーを集中させて伝搬する弾性表面波を利用するものであるため、媒質の表面上に誘電体膜を形成したり、表面をエッチングしたりすることにより比較的容易に、共振周波数や中心周波数などの周波数特性の製造ばらつきを調整することができる。それに対して、弾性境界波装置が利用する弾性境界波は、媒質間の境界にエネルギーを集中させて伝搬する弾性波である。このため、弾性境界波装置では、弾性境界波は、最上層に位置する媒質の表面の状態に影響されにくく、最上層に位置する媒質の表面上に誘電体膜を形成したり、表面をエッチングしたりしても、周波数特性を調整することができない。すなわち、弾性境界波装置には、周波数特性の製造ばらつきを抑制するのが困難であるという問題があった。 By the way, the surface acoustic wave device uses surface acoustic waves that propagate with concentration of energy on the surface of the medium, so that a dielectric film is formed on the surface of the medium or the surface is etched. Therefore, it is possible to adjust the manufacturing variation of the frequency characteristics such as the resonance frequency and the center frequency relatively easily. On the other hand, the boundary acoustic wave utilized by the boundary acoustic wave device is an acoustic wave that propagates while concentrating energy at the boundary between the media. Therefore, in the boundary acoustic wave device, the boundary acoustic wave is hardly affected by the state of the surface of the medium located in the uppermost layer, and a dielectric film is formed on the surface of the medium located in the uppermost layer, or the surface is etched. However, the frequency characteristics cannot be adjusted. In other words, the boundary acoustic wave device has a problem in that it is difficult to suppress manufacturing variations in frequency characteristics.
　このような問題に鑑み、例えば、下記の特許文献１では、圧電体からなる第１の媒質の上に、第２及び第３の媒質がこの順番で積層された３媒質型の弾性境界波装置の製造に際して、第２の媒質を形成した後に、第２の媒質の厚みを調整することにより周波数特性等を調整し、その後、第３の媒質を形成することが提案されている。 In view of such a problem, for example, in Patent Document 1 below, a three-medium type boundary acoustic wave device in which a second medium and a third medium are stacked in this order on a first medium made of a piezoelectric body. In manufacturing, it is proposed that after the second medium is formed, the frequency characteristics and the like are adjusted by adjusting the thickness of the second medium, and then the third medium is formed.
ＷＯ２００５／０９３９４９　Ａ１号公報WO2005 / 0993949 A1 Publication ＷＯ２００６／１１４９３０　Ａ１号公報WO2006 / 114930 A1 Publication
　ところで、第２の媒質の厚みは、上記の特許文献２に記載のように、高次モードの音速に影響を及ぼす。そして、高次モードの音速は、高次モードスプリアスの大きさに影響を及ぼす。このため、第２の媒質の厚みが異なると、高次モードスプリアスの大きさも異なることとなる。 Incidentally, the thickness of the second medium affects the sound speed of the higher-order mode as described in Patent Document 2 above. The sound speed of the higher order mode affects the magnitude of the higher order mode spurious. For this reason, when the thickness of the second medium is different, the magnitude of the higher-order mode spurious is also different.
　従って、第２の媒質の厚みを調整することにより周波数特性等を調整した場合、調整後の第２の媒質の厚みによっては、高次モードスプリアスの大きさが所望する大きさよりも大きくなってしまう場合がある。従って、弾性境界波装置の歩留まりが低下する場合があるという問題があった。 Therefore, when the frequency characteristic or the like is adjusted by adjusting the thickness of the second medium, the size of the higher-order mode spurious becomes larger than the desired size depending on the thickness of the adjusted second medium. There is a case. Therefore, there has been a problem that the yield of the boundary acoustic wave device may decrease.
　本発明は、かかる点に鑑みてなされたものであり、その目的は、高い歩留まりで生産し得る弾性境界波装置を提供することにある。 The present invention has been made in view of such points, and an object thereof is to provide a boundary acoustic wave device that can be produced with a high yield.
　本発明者は、鋭意研究の結果、ＩＤＴ電極の構成を所定の構成とすることにより、第２の媒質の厚みの変化に伴う高次モードの音速の変化を抑制できることを見出し、その結果、本発明をなすに至った。 As a result of diligent research, the present inventor has found that the change in the sound speed of the higher mode accompanying the change in the thickness of the second medium can be suppressed by setting the IDT electrode configuration to a predetermined configuration. Invented the invention.
　すなわち、本発明に係る弾性境界波装置は、第１の媒質と、第２の媒質と、第３の媒質と、ＩＤＴ電極とを備えている。第１の媒質は、圧電体からなる。第２の媒質は、第１の媒質の上に形成されている。第２の媒質は、誘電体からなる。第３の媒質は、第２の媒質の上に形成されている。第３の媒質は、誘電体からなる。ＩＤＴ電極は、第１の媒質と、第２の媒質との境界に形成されている。本発明に係る弾性境界波装置では、第２の媒質の音速が、第１及び第３の媒質の音速よりも遅い。ＩＤＴ電極は、第１の電極層と、第２の電極層と、第３の電極層とを有する。第１の電極層は、第１の媒質の上に形成されている。第２の電極層は、第１の電極層の上に形成されている。第３の電極層は、第２の電極層の上に形成されている。第２の電極層の密度は、第１及び第３の電極層の密度よりも低い。本発明に係る弾性境界波装置は、第１の電極層の厚みをｈ１、第３の電極層の厚みをｈ３としたときに、０．５５＜ｈ３／（ｈ１＋ｈ３）＜０．９５を満たす。 That is, the boundary acoustic wave device according to the present invention includes a first medium, a second medium, a third medium, and an IDT electrode. The first medium is made of a piezoelectric body. The second medium is formed on the first medium. The second medium is made of a dielectric material. The third medium is formed on the second medium. The third medium is made of a dielectric. The IDT electrode is formed at the boundary between the first medium and the second medium. In the boundary acoustic wave device according to the present invention, the sound velocity of the second medium is slower than the sound velocity of the first and third media. The IDT electrode has a first electrode layer, a second electrode layer, and a third electrode layer. The first electrode layer is formed on the first medium. The second electrode layer is formed on the first electrode layer. The third electrode layer is formed on the second electrode layer. The density of the second electrode layer is lower than the density of the first and third electrode layers. The boundary acoustic wave device according to the present invention satisfies 0.55 <h3 / (h1 + h3) <0.95, where h1 is the thickness of the first electrode layer and h3 is the thickness of the third electrode layer.
　本発明に係る弾性境界波装置のある特定の局面では、弾性境界波装置は、０．７０＜ｈ３／（ｈ１＋ｈ３）＜０．９５を満たす。この構成によれば、高次モードスプリアスの大きさの第２の媒質の厚みに対する依存性をより効果的に低減することができる。 In a specific aspect of the boundary acoustic wave device according to the present invention, the boundary acoustic wave device satisfies 0.70 <h3 / (h1 + h3) <0.95. According to this configuration, the dependence of the magnitude of the higher-order mode spurious on the thickness of the second medium can be more effectively reduced.
　本発明に係る弾性境界波装置の他の特定の局面では、弾性境界波装置は、第２の電極層の厚みをｈ２、ＩＤＴ電極のピッチで定められる弾性境界波の波長をλとしたときに、０．０５＜ｈ２／λ＜０．２５を満たす。この構成によれば、上記高次モードスプリアスの大きさの第２の媒質の厚みに対する依存性を低減できる効果がより好適に発現する。ｈ２／λが０．０５以下である場合は、上記高次モードスプリアスの大きさの第２の媒質の厚みに対する依存性を低減できる効果が得難くなる場合がある。一方、ｈ２／λが０．２５以上となると、電気機械結合係数が小さくなったり、ＩＤＴ電極の上に形成される、第２及び第３の媒質の形状精度が十分に得られなくなったりする場合がある。 In another specific aspect of the boundary acoustic wave device according to the present invention, the boundary acoustic wave device is configured such that the thickness of the second electrode layer is h2 and the wavelength of the boundary acoustic wave determined by the pitch of the IDT electrode is λ. 0.05 <h2 / λ <0.25. According to this configuration, the effect of reducing the dependency of the size of the higher-order mode spurious on the thickness of the second medium is more suitably exhibited. When h2 / λ is 0.05 or less, it may be difficult to obtain an effect of reducing the dependency of the magnitude of the higher-order mode spurious on the thickness of the second medium. On the other hand, when h2 / λ is 0.25 or more, the electromechanical coupling coefficient becomes small, or the shape accuracy of the second and third media formed on the IDT electrode cannot be obtained sufficiently. There is.
　本発明に係る弾性境界波装置の別の特定の局面では、弾性境界波装置は、第２の媒質の厚みをＨ、ＩＤＴ電極のピッチで定められる弾性境界波の波長をλとしたときに、０．３＜Ｈ／λ＜０．７を満たす。この構成によれば、上記高次モードスプリアスの大きさの第２の媒質の厚みに対する依存性をより低減できる効果がさらに好適に発現する。 In another specific aspect of the boundary acoustic wave device according to the present invention, the boundary acoustic wave device is configured such that the thickness of the second medium is H and the wavelength of the boundary acoustic wave determined by the pitch of the IDT electrode is λ. 0.3 <H / λ <0.7 is satisfied. According to this configuration, the effect that the dependency of the size of the higher-order mode spurious on the thickness of the second medium can be further reduced is more preferably exhibited.
　本発明に係る弾性境界波装置のさらに他の特定の局面では、第１及び第３の電極層のそれぞれが、Ａｕ，Ｐｔ，Ｗ，Ｔａ，Ａｇ及びＣｕからなる群から選ばれた金属またはＡｕ，Ｐｔ，Ｗ，Ｔａ，Ａｇ及びＣｕからなる群から選ばれた一種以上の金属を主成分とする合金からなる。 In still another specific aspect of the boundary acoustic wave device according to the present invention, each of the first and third electrode layers is a metal selected from the group consisting of Au, Pt, W, Ta, Ag, and Cu, or Au , Pt, W, Ta, Ag, and Cu, and an alloy mainly composed of one or more metals selected from the group consisting of.
　本発明に係る弾性境界波装置のさらに別の特定の局面では、第２の電極層が、Ａｌ，Ｔｉ，Ｍｇ，Ｃｒ，Ｆｅ，Ｎｉ，Ａｇ及びＣｕからなる群から選ばれた金属またはＡｌ，Ｔｉ，Ｍｇ，Ｃｒ，Ｆｅ，Ｎｉ，Ａｇ及びＣｕからなる群から選ばれた一種以上の金属を主成分とする合金からなる。 In still another specific aspect of the boundary acoustic wave device according to the present invention, the second electrode layer is a metal selected from the group consisting of Al, Ti, Mg, Cr, Fe, Ni, Ag, and Cu, or Al, It consists of the alloy which has as a main component 1 or more types of metals chosen from the group which consists of Ti, Mg, Cr, Fe, Ni, Ag, and Cu.
　本発明に係る弾性境界波装置のまた他の特定の局面では、第１及び第３の電極層のそれぞれがＰｔまたはＰｔを主成分とする合金からなり、第２の電極層がＡｌまたはＡｌを主成分とする合金からなる。この構成によれば、ＩＤＴ電極の低抵抗化と、高信頼性とを両立させることができる。 In another specific aspect of the boundary acoustic wave device according to the present invention, each of the first and third electrode layers is made of Pt or an alloy containing Pt as a main component, and the second electrode layer is made of Al or Al. It consists of an alloy containing the main component. According to this configuration, it is possible to achieve both low resistance of the IDT electrode and high reliability.
　本発明に係る弾性境界波装置のまた別の特定の局面では、第２の媒質が酸化ケイ素からなる。この構成によれば、周波数温度特性を改善することができる。 In another specific aspect of the boundary acoustic wave device according to the present invention, the second medium is made of silicon oxide. According to this configuration, the frequency temperature characteristic can be improved.
　本発明に係る弾性境界波装置のさらにまた他の特定の局面では、第１の媒質がＬｉＮｂＯ３からなる。 In still another specific aspect of the boundary acoustic wave device according to the present invention, the first medium is made of LiNbO 3 .
　本発明に係る弾性境界波装置のさらにまた別の特定の局面では、第１の媒質が、０°～３７°回転ＹカットＬｉＮｂＯ３基板からなり、弾性境界波装置は、ＳＨ型の弾性境界波を用いる。この構成では、高次モードスプリアスが生じやすいため、本発明が特に好適である。 In still another specific aspect of the boundary acoustic wave device according to the present invention, the first medium is composed of a 0 ° -37 ° rotated Y-cut LiNbO 3 substrate, and the boundary acoustic wave device is an SH type boundary acoustic wave. Is used. In this configuration, high-order mode spurious is likely to occur, and the present invention is particularly suitable.
　本発明に係る弾性境界波装置のまたさらに他の特定の局面では、第３の媒質が、ケイ素、窒化ケイ素、炭化ケイ素、酸化アルミニウムまたは窒化アルミニウムからなる。 In still another specific aspect of the boundary acoustic wave device according to the present invention, the third medium is made of silicon, silicon nitride, silicon carbide, aluminum oxide, or aluminum nitride.
　本発明に係る弾性境界波装置のまたさらに別の特定の局面では、第３の媒質が窒化ケイ素からなる。この構成では、第３の媒質の加工が容易である。 In yet another specific aspect of the boundary acoustic wave device according to the present invention, the third medium is made of silicon nitride. In this configuration, the third medium can be easily processed.
　本発明に係る弾性境界波装置のさらに異なる他の特定の局面では、弾性境界波装置は、第１の媒質とＩＤＴ電極との間に形成されている誘電体層をさらに備える。この構成によれば、耐サージ性を向上することができる。 In another specific aspect of the boundary acoustic wave device according to the present invention, the boundary acoustic wave device further includes a dielectric layer formed between the first medium and the IDT electrode. According to this configuration, surge resistance can be improved.
　本発明に係る弾性境界波装置のさらに異なる別の特定の局面では、第１の媒質がＬｉＮｂＯ３基板からなり、第１及び第３の電極層のそれぞれがＰｔからなり、第２の電極層がＡｌからなり、第２の媒質がＳｉＯ２膜からなり、（ｈ１＋ｈ３）、ｈ３／（ｈ１＋ｈ３）、ｈ２、Ｈ、及びＬｉＮｂＯ３基板のカット角が、下記の第１～第３のグループのいずれかの組み合わせとされている。 In another specific aspect of the boundary acoustic wave device according to the present invention, the first medium is made of a LiNbO 3 substrate, each of the first and third electrode layers is made of Pt, and the second electrode layer is made of It is made of Al, the second medium is made of a SiO 2 film, and the cut angles of the (h1 + h3), h3 / (h1 + h3), h2, H, and LiNbO 3 substrates are any of the following first to third groups: It is a combination of.
　（第１のグループ）
　（ａ１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～27°
　（ａ２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～30.5°
　（ａ３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～30°
　（ａ４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～27.5°
　（ａ５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～30°
　（ａ６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ａ７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～27.5°
　（ａ８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～30°
　（ａ９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29°
　（ａ１０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23°～28.5°
　（ａ１１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～31°
　（ａ１２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ａ１３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23°～29°
　（ａ１４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～31°
　（ａ１５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～29°
　（ａ１６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23°～29.5°
　（ａ１７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30.5°
　（ａ１８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～28.5°
　（ａ１９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30°
　（ａ２０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31.5°
　（ａ２１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～30°
　（ａ２２）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30.5°
　（ａ２３）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ａ２４）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～29°
　（ａ２５）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～30.5°
　（ａ２６）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～30.5°
　（ａ２７）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～28° (First group)
(A1) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21.5 ° ~ 27 °
(A2) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ～ 30.5 °
(A3) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(A4) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21.5 ° ~ 27.5 °
(A5) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° -30 °
(A6) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
(A7) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21.5 ° ~ 27.5 °
(A8) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° -30 °
(A9) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -29 °
(A10) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23 ° ~ 28.5 °
(A11) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
(A12) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(A13) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23 ° ~ 29 °
(A14) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -31 °
(A15) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -29 °
(A16) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
(A17) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° ~ 30.5 °
(A18) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° ~ 28.5 °
(A19) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° -30 °
(A20) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31.5 °
(A21) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° -30 °
(A22) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 30.5 °
(A23) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
(A24) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23.5 ° -29 °
(A25) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23.5 ° ~ 30.5 °
(A26) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23.5 ° ~ 30.5 °
(A27) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° ~ 28 °
　（第２のグループ）
　（ｃ１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22°～28.5°
　（ｃ２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～28°
　（ｃ４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～29°
　（ｃ５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29.5°
　（ｃ６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～26.5°
　（ｃ７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29°
　（ｃ８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～29°
　（ｃ９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～26.5°
　（ｃ１０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～28.5°
　（ｃ１１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ１２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～27°
　（ｃ１３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29°
　（ｃ１４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29°
　（ｃ１５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～26°
　（ｃ１６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
　（ｃ１７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28.5°
　（ｃ１８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22°～26.5°
　（ｃ１９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29°
　（ｃ２０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29.5°
　（ｃ２１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～26.5°
　（ｃ２２）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
　（ｃ２３）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28.5°
　（ｃ２４）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～26°
　（ｃ２５）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｃ２６）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～27°
　（ｃ２７）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21°～27°
　（ｃ２８）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ２９）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～30.5°
　（ｃ３０）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～28°
　（ｃ３１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ３２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～29.5°
　（ｃ３３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～25.5°
　（ｃ３４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ３５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～28.5°
　（ｃ３６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、22°～26°
　（ｃ３７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ３８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ３９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～27°
　（ｃ４０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ４１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～29°
　（ｃ４２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、22.5°～25.5°
　（ｃ４３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～30°
　（ｃ４４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、25°～27°
　（ｃ４５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、20.5°～26°
　（ｃ４６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ４７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～29.5°
　（ｃ４８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～25.5°
　（ｃ４９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ５０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24.5°～28°
　（ｃ５１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、21°～25.5°
　（ｃ５２）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～30°
　（ｃ５３）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～26.5°
　（ｃ５４）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、19.5°～25.5°
　（ｃ５５）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ｃ５６）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ｃ５７）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～27.5°
　（ｃ５８）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～3°
　（ｃ５９）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～29°
　（ｃ６０）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～26.5°
　（ｃ６１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30.5°
　（ｃ６２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～27.5°
　（ｃ６３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、20.5°～25°
　（ｃ６４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ｃ６５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30°
　（ｃ６６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～26.5°
　（ｃ６７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ｃ６８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～28.5°
　（ｃ６９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、21.5°～25°
　（ｃ７０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30°
　（ｃ７１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、22°～26°
　（ｃ７２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、19°～25°
　（ｃ７３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ｃ７４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～29.5°
　（ｃ７５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～26°
　（ｃ７６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30.5°
　（ｃ７７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～27°
　（ｃ７８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、20°～25°
　（ｃ７９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24.5°～30°
　（ｃ８０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～26°
　（ｃ８１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、18°～24.5° (Second group)
(C1) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22 ° ~ 28.5 °
(C2) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(C3) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -28 °
(C4) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22.5 ° -29 °
(C5) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
(C6) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° ~ 26.5 °
(C7) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29 °
(C8) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° -29 °
(C9) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 26.5 °
(C10) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22.5 ° ~ 28.5 °
(C11) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(C12) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -27 °
(C13) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29 °
(C14) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 29 °
(C15) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -26 °
(C16) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
(C17) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 25 ° ~ 28.5 °
(C18) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22 ° ~ 26.5 °
(C19) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29 °
(C20) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
(C21) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 26.5 °
(C22) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
(C23) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° ~ 28.5 °
(C24) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22.5 ° -26 °
(C25) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
(C26) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° -27 °
(C27) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21 ° ~ 27 °
(C28) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(C29) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 30.5 °
(C30) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -28 °
(C31) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(C32) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
(C33) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 25.5 °
(C34) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(C35) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 28.5 °
(C36) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 22 ° ~ 26 °
(C37) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(C38) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(C39) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -27 °
(C40) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(C41) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 29 °
(C42) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 22.5 ° ~ 25.5 °
(C43) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° -30 °
(C44) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 25 ° ~ 27 °
(C45) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 20.5 ° -26 °
(C46) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(C47) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
(C48) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 25.5 °
(C49) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
(C50) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24.5 ° -28 °
(C51) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 21 ° ~ 25.5 °
(C52) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° -30 °
(C53) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 26.5 °
(C54) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 19.5 ° ~ 25.5 °
(C55) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
(C56) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
(C57) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° -27.5 °
(C58) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 3 °
(C59) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 29 °
(C60) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° ~ 26.5 °
(C61) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 30.5 °
(C62) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 27.5 °
(C63) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 20.5 ° -25 °
(C64) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
(C65) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° -30 °
(C66) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° ~ 26.5 °
(C67) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
(C68) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 28.5 °
(C69) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 21.5 ° -25 °
(C70) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° -30 °
(C71) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 22 ° ~ 26 °
(C72) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 19 ° ~ 25 °
(C73) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
(C74) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
(C75) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23.5 ° -26 °
(C76) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 30.5 °
(C77) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 27 °
(C78) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 20 ° ~ 25 °
(C79) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24.5 ° -30 °
(C80) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° ~ 26 °
(C81) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 18 ° ~ 24.5 °
　（第３のグループ）
　（ｄ１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、19.5°～25°
　（ｄ２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～28.5°
　（ｄ４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、19°～25°
　（ｄ５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～28°
　（ｄ７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、18.5°～24°
　（ｄ８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、27°～29°
　（ｄ１０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、20°～26°
　（ｄ１１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、24°～29.5°
　（ｄ１２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～27.5°
　（ｄ１３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、20°～26°
　（ｄ１４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、24.5°～30°
　（ｄ１５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、26°～29.5°
　（ｄ１６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、19.5°～25.5°
　（ｄ１７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～30°
　（ｄ１８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、26°～31°
　（ｄ１９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、20.5°～21.5°
　（ｄ２０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～30°
　（ｄ２１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～29°
　（ｄ２２）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、21°～27°
　（ｄ２３）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、26°～30°
　（ｄ２４）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～30.5°
　（ｄ２５）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、21°～26.5°
　（ｄ２６）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、26.5°～30°
　（ｄ２７）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～32°
　（ｄ２８）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、21.5°～28°
　（ｄ２９）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～29.5°
　（ｄ３０）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25.5°～26.5°
　（ｄ３１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、21.5°～28°
　（ｄ３２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24.5°～29.5°
　（ｄ３３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～28°
　（ｄ３４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～28°
　（ｄ３５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25.5°～29°
　（ｄ３６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23.5°～28.5°
　（ｄ３７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～28.5°
　（ｄ３８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24.5°～29.5°
　（ｄ３９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～27°
　（ｄ４０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22.5°～28.5°
　（ｄ４１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～29°
　（ｄ４２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～28.5°
　（ｄ４３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～29°
　（ｄ４４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～28°
　（ｄ４５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～29.5°
　（ｄ４６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22.5°～29°
　（ｄ４７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～29°
　（ｄ４８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～28°
　（ｄ４９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23.5°～29°
　（ｄ５０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～28°
　（ｄ５１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～28.5°
　（ｄ５２）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～29.5°
　（ｄ５３）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、26°～30°
　（ｄ５４）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～30°
　（ｄ５５）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～29°
　（ｄ５６）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29°
　（ｄ５７）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～26°
　（ｄ５８）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
　（ｄ５９）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28.5°
　（ｄ６０）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22°～27°
　（ｄ６１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ６２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28°
　（ｄ６３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21°～27.5°
　（ｄ６４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
　（ｄ６５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28.5°
　（ｄ６６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～26.5°
　（ｄ６７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ６８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28.5°
　（ｄ６９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21°～27°
　（ｄ７０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～30°
　（ｄ７１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～28°
　（ｄ７２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、20°～27.5°
　（ｄ７３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ７４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28°
　（ｄ７５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～26.5°
　（ｄ７６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29.5°
　（ｄ７７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28°
　（ｄ７８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、20°～27°
　（ｄ７９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～29.5°
　（ｄ８０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29°
　（ｄ８１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、19°～27.5° (Third group)
(D1) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cutting angle is 19.5 ° -25 °
(D2) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
(D3) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25.5 ° ~ 28.5 °
(D4) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 19 ° ~ 25 °
(D5) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
(D6) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25.5 ° -28 °
(D7) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 18.5 ° -24 °
(D8) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
(D9) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 27 ° ~ 29 °
(D10) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 20 ° ~ 26 °
(D11) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
(D12) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25 ° ~ 27.5 °
(D13) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 20 ° ~ 26 °
(D14) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 24.5 ° -30 °
(D15) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 26 ° ~ 29.5 °
(D16) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 19.5 ° ~ 25.5 °
(D17) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25 ° -30 °
(D18) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 26 ° ~ 31 °
(D19) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 20.5 ° ~ 21.5 °
(D20) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25 ° -30 °
(D21) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25.5 ° -29 °
(D22) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 21 ° ~ 27 °
(D23) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 26 ° -30 °
(D24) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25 ° ~ 30.5 °
(D25) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 21 ° ~ 26.5 °
(D26) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 26.5 ° -30 °
(D27) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25.5 ° ~ 32 °
(D28) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 21.5 ° -28 °
(D29) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
(D30) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25.5 ° ~ 26.5 °
(D31) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 21.5 ° -28 °
(D32) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24.5 ° ~ 29.5 °
(D33) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24 ° ~ 28 °
(D34) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22 ° -28 °
(D35) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25.5 ° -29 °
(D36) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23.5 ° ~ 28.5 °
(D37) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22 ° ~ 28.5 °
(D38) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24.5 ° ~ 29.5 °
(D39) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24 ° ~ 27 °
(D40) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22.5 ° ~ 28.5 °
(D41) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25 ° ~ 29 °
(D42) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23 ° ~ 28.5 °
(D43) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23 ° ~ 29 °
(D44) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25 ° to 28 °
(D45) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
(D46) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22.5 ° -29 °
(D47) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25 ° ~ 29 °
(D48) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23 ° ~ 28 °
(D49) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23.5 ° -29 °
(D50) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25 ° to 28 °
(D51) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22 ° ~ 28.5 °
(D52) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
(D53) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 26 ° -30 °
(D54) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22 ° -30 °
(D55) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22.5 ° -29 °
(D56) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 29 °
(D57) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -26 °
(D58) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
(D59) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 25 ° ~ 28.5 °
(D60) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22 ° ~ 27 °
(D61) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
(D62) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 25 ° to 28 °
(D63) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21 ° ~ 27.5 °
(D64) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
(D65) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° ~ 28.5 °
(D66) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22.5 ° ~ 26.5 °
(D67) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
(D68) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° ~ 28.5 °
(D69) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21 ° ~ 27 °
(D70) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° -30 °
(D71) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 28 °
(D72) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 20 ° ~ 27.5 °
(D73) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
(D74) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 25 ° to 28 °
(D75) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21.5 ° ~ 26.5 °
(D76) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
(D77) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° -28 °
(D78) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 20 ° ~ 27 °
(D79) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 25 ° ~ 29.5 °
(D80) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -29 °
(D81) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 19 ° ~ 27.5 °
　本発明に係る弾性境界波装置の製造方法は、上記本発明に係る弾性境界波装置の製造方法であって、第２の媒質の厚みを調整することにより周波数特性を調整した後に第３の媒質を形成する。 The method for manufacturing a boundary acoustic wave device according to the present invention is a method for manufacturing the boundary acoustic wave device according to the present invention, wherein the third medium is adjusted after adjusting the frequency characteristics by adjusting the thickness of the second medium. Form.
　本発明では、弾性境界波装置が、第１～第３の媒質を有する３媒質型の弾性境界波装置であり、ＩＤＴ電極が、第１及び第３の電極層と、第１及び第３の電極層の間に位置しており、第１及び第３の電極層よりも密度が低い第２の電極層とを有し、かつ、第１の電極層の厚みをｈ１、第３の電極層の厚みをｈ３としたときに、０．５５＜ｈ３／（ｈ１＋ｈ３）＜０．９５とされている。このため、第２の媒質の厚みに対する高次モードの音速の依存性が低い。すなわち、第２の媒質の厚みが変化しても高次モードの音速が変化しにくく、第２の媒質の厚みの変化にともなって高次モードスプリアスの大きさも変化しにくい。よって、周波数特性等を調整するために、第２の媒質の厚みを調整した場合であっても、高次モードスプリアスの大きさが所望の大きさよりも大きくなることが効果的に抑制される。従って、周波数特性等に関する不良が生じ難いと共に、高次モードスプリアスの大きさに関する不良も生じ難く、その結果、高い歩留まりで弾性境界波装置を製造することができる。 In the present invention, the boundary acoustic wave device is a three-medium type boundary acoustic wave device having first to third media, the IDT electrode includes the first and third electrode layers, the first and third electrodes. A second electrode layer located between the electrode layers and having a lower density than the first and third electrode layers, the thickness of the first electrode layer being h1, and the third electrode layer When the thickness of h3 is h3, 0.55 <h3 / (h1 + h3) <0.95. For this reason, the dependence of the sound speed of the higher-order mode on the thickness of the second medium is low. That is, even if the thickness of the second medium changes, the sound speed of the higher-order mode hardly changes, and the magnitude of the higher-order mode spurious does not easily change as the thickness of the second medium changes. Therefore, even when the thickness of the second medium is adjusted in order to adjust the frequency characteristics and the like, it is effectively suppressed that the size of the higher-order mode spurious becomes larger than the desired size. Therefore, it is difficult for defects relating to frequency characteristics and the like to occur, and defects relating to the magnitude of higher-order mode spurs are less likely to occur. As a result, boundary acoustic wave devices can be manufactured with a high yield.
図１は、第１の実施形態に係る弾性境界波装置の略図的断面図である。FIG. 1 is a schematic cross-sectional view of a boundary acoustic wave device according to a first embodiment. 図２は、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 2 is a graph showing the relationship between the thickness (H) of the second medium and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.30. 図３は、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 3 is a graph showing the relationship between the thickness (H) of the second medium and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.55. 図４は、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 4 is a graph showing the relationship between the thickness (H) of the second medium and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.70. 図５は、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 5 is a graph showing the relationship between the thickness (H) of the second medium and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.90. 図６は、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 6 is a graph showing the relationship between the thickness (H) of the second medium and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.95. 図７は、第２の電極層２２の厚み（ｈ２）が０．０７λであり、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 7 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07λ and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship. 図８は、第２の電極層２２の厚み（ｈ２）が０．０７λであり、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 8 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07λ and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship. 図９は、第２の電極層２２の厚み（ｈ２）が０．０７λであり、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 9 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07λ and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship. 図１０は、第２の電極層２２の厚み（ｈ２）が０．０７λであり、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 10 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07λ and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship. 図１１は、第２の電極層２２の厚み（ｈ２）が０．０７λであり、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 11 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07λ and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship. 図１２は、第２の電極層２２の厚み（ｈ２）が０．２０λであり、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 12 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20λ and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship. 図１３は、第２の電極層２２の厚み（ｈ２）が０．２０λであり、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 13 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20λ and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship. 図１４は、第２の電極層２２の厚み（ｈ２）が０．２０λであり、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 14 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20λ and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship. 図１５は、第２の電極層２２の厚み（ｈ２）が０．２０λであり、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 15 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20λ and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship. 図１６は、第２の電極層２２の厚み（ｈ２）が０．２０λであり、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 16 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20λ and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship. 図１７は、第１及び第３の電極層２１，２３の厚みの合計（ｈ１＋ｈ３）が０．０４λ、第２の電極層２２の厚み（ｈ２）が０．１４λであり、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 17 shows that the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04λ, the thickness (h2) of the second electrode layer 22 is 0.14λ, and h3 / (h1 + h3). 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.30. 図１８は、第１及び第３の電極層２１，２３の厚みの合計（ｈ１＋ｈ３）が０．０４λ、第２の電極層２２の厚み（ｈ２）が０．１４λであり、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。In FIG. 18, the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04λ, the thickness (h2) of the second electrode layer 22 is 0.14λ, and h3 / (h1 + h3). 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.55. 図１９は、第１及び第３の電極層２１，２３の厚みの合計（ｈ１＋ｈ３）が０．０４λ、第２の電極層２２の厚み（ｈ２）が０．１４λであり、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。In FIG. 19, the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04λ, the thickness (h2) of the second electrode layer 22 is 0.14λ, and h3 / (h1 + h3). 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when is 0.70. 図２０は、第１及び第３の電極層２１，２３の厚みの合計（ｈ１＋ｈ３）が０．０４λ、第２の電極層２２の厚み（ｈ２）が０．１４λであり、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。In FIG. 20, the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04λ, the thickness (h2) of the second electrode layer 22 is 0.14λ, and h3 / (h1 + h3). 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.90. 図２１は、第１及び第３の電極層２１，２３の厚み（ｈ１＋ｈ３）の合計が０．０４λ、第２の電極層２２の厚み（ｈ２）が０．１４λであり、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 21 shows that the total thickness (h1 + h3) of the first and third electrode layers 21, 23 is 0.04λ, the thickness (h2) of the second electrode layer 22 is 0.14λ, and h3 / (h1 + h3). 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.95. 図２２は、第１の電極層２１：Ａｕ／第２の電極層：Ａｌ／第３の電極層：Ａｕであり、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 22 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図２３は、第１の電極層２１：Ａｕ／第２の電極層：Ａｌ／第３の電極層：Ａｕであり、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 23 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図２４は、第１の電極層２１：Ａｕ／第２の電極層：Ａｌ／第３の電極層：Ａｕであり、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 24 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図２５は、第１の電極層２１：Ａｕ／第２の電極層：Ａｌ／第３の電極層：Ａｕであり、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 25 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図２６は、第１の電極層２１：Ａｕ／第２の電極層：Ａｌ／第３の電極層：Ａｕであり、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 26 shows the thickness of the second medium 12 when the first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図２７は、第１の電極層２１：Ｗ／第２の電極層：Ａｌ／第３の電極層：Ｗであり、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 27 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図２８は、第１の電極層２１：Ｗ／第２の電極層：Ａｌ／第３の電極層：Ｗであり、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 28 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図２９は、第１の電極層２１：Ｗ／第２の電極層：Ａｌ／第３の電極層：Ｗであり、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 29 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図３０は、第１の電極層２１：Ｗ／第２の電極層：Ａｌ／第３の電極層：Ｗであり、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 30 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図３１は、第１の電極層２１：Ｗ／第２の電極層：Ａｌ／第３の電極層：Ｗであり、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 31 shows the thickness of the second medium 12 when the first electrode layer 21: W / second electrode layer: Al / third electrode layer: W and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図３２は、第１の電極層２１：Ｔａ／第２の電極層：Ａｌ／第３の電極層：Ｔａであり、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 32 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図３３は、第１の電極層２１：Ｔａ／第２の電極層：Ａｌ／第３の電極層：Ｔａであり、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 33 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図３４は、第１の電極層２１：Ｔａ／第２の電極層：Ａｌ／第３の電極層：Ｔａであり、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 34 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図３５は、第１の電極層２１：Ｔａ／第２の電極層：Ａｌ／第３の電極層：Ｔａであり、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 35 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図３６は、第１の電極層２１：Ｔａ／第２の電極層：Ａｌ／第３の電極層：Ｔａであり、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 36 shows the thickness of the second medium 12 when the first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図３７は、第１の電極層２１：Ｃｕ／第２の電極層：Ａｌ／第３の電極層：Ｃｕであり、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 37 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図３８は、第１の電極層２１：Ｃｕ／第２の電極層：Ａｌ／第３の電極層：Ｃｕであり、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 38 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図３９は、第１の電極層２１：Ｃｕ／第２の電極層：Ａｌ／第３の電極層：Ｃｕであり、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 39 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図４０は、第１の電極層２１：Ｃｕ／第２の電極層：Ａｌ／第３の電極層：Ｃｕであり、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 40 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図４１は、第１の電極層２１：Ｃｕ／第２の電極層：Ａｌ／第３の電極層：Ｃｕであり、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 41 shows the thickness of the second medium 12 when the first electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図４２は、第１の電極層２１：Ｐｔ／第２の電極層：Ｃｕ／第３の電極層：Ｐｔであり、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 42 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図４３は、第１の電極層２１：Ｐｔ／第２の電極層：Ｃｕ／第３の電極層：Ｐｔであり、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 43 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図４４は、第１の電極層２１：Ｐｔ／第２の電極層：Ｃｕ／第３の電極層：Ｐｔであり、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 44 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図４５は、第１の電極層２１：Ｐｔ／第２の電極層：Ｃｕ／第３の電極層：Ｐｔであり、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 45 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図４６は、第１の電極層２１：Ｐｔ／第２の電極層：Ｃｕ／第３の電極層：Ｐｔであり、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。FIG. 46 shows the thickness of the second medium 12 when the first electrode layer 21: Pt / second electrode layer: Cu / third electrode layer: Pt and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship between (H) and the sound speed of a higher-order mode. 図４７は、３７°ＹカットＬｉＮｂＯ３基板を第１の媒質として用いた場合のインピーダンス（Ｚ）特性を表すグラフである。FIG. 47 is a graph showing impedance (Z) characteristics when a 37 ° Y-cut LiNbO 3 substrate is used as the first medium. 図４８は、３７°ＹカットＬｉＮｂＯ３基板を第１の媒質として用いた場合の位相特性を表すグラフである。FIG. 48 is a graph showing phase characteristics when a 37 ° Y-cut LiNbO 3 substrate is used as the first medium. 図４９は、０°ＹカットＬｉＮｂＯ３基板を第１の媒質として用いた場合のインピーダンス（Ｚ）特性を表すグラフである。FIG. 49 is a graph showing impedance (Z) characteristics when a 0 ° Y-cut LiNbO 3 substrate is used as the first medium. 図５０は、０°ＹカットＬｉＮｂＯ３基板を第１の媒質として用いた場合の位相特性を表すグラフである。FIG. 50 is a graph showing phase characteristics when a 0 ° Y-cut LiNbO 3 substrate is used as the first medium. 図５１は、第２の実施形態に係る弾性境界波装置の略図的断面図である。FIG. 51 is a schematic cross-sectional view of a boundary acoustic wave device according to the second embodiment. 図５２は、第３の実施形態に係る弾性境界波装置におけるＩＤＴ電極の略図的断面図である。FIG. 52 is a schematic cross-sectional view of an IDT electrode in a boundary acoustic wave device according to a third embodiment. 図５３は、第４の実施形態に係る弾性境界波装置におけるＩＤＴ電極の略図的断面図である。FIG. 53 is a schematic cross-sectional view of an IDT electrode in a boundary acoustic wave device according to a fourth embodiment. 図５４は、第５の実施形態に係る弾性境界波装置の略図的断面図である。FIG. 54 is a schematic cross-sectional view of a boundary acoustic wave device according to a fifth embodiment. 図５５は、ＳｉＯ２膜の膜厚（Ｈ）が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比（ｈ３／（ｈ１＋ｈ３））が０．４５、Ａｌ膜の膜厚（ｈ２）が０．０８λであり、Ｐｔ膜厚合計（ｈ１＋ｈ３）が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 55, the SiO 2 film thickness (H) is 0.40λ, the ratio (h3 / (h1 + h3)) to the total Pt film thickness of the first Pt film is 0.45, and the Al film thickness (h2). Is the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness (h1 + h3) is 0.02λ, 0.025λ, or 0.03λ. 図５６は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．４５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 56, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.45, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図５７は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．４５、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 57, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.45, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図５８は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 58, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.50, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図５９は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 59, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.50, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図６０は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５０、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 60, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.50, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図６１は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 61, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.55, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図６２は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 62, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.55, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図６３は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５５、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 63, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.55, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図６４は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．４５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 64, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.45, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図６５は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．４５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 65, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.45, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図６６は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．４５、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 66, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.45, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図６７は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 67, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.50, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図６８は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 68, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.50, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図６９は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５０、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 69, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.50, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図７０は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 70, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.55, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図７１は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 71, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.55, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図７２は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５５、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 72, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.55, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図７３は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．４５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 73, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.45, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図７４は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．４５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 74, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.45, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図７５は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．４５、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 75, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.45, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図７６は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 76, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.50, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図７７は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 77, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.50, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図７８は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５０、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 78, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.50, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図７９は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 79, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.55, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図８０は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 80, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.55, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図８１は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．５５、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 81, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.55, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図８２は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．７５、Ａｌ膜の膜厚が０．０６λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 82, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.75, the Al film thickness is 0.06λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図８３は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．７５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 83, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.75, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図８４は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．７５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 84, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.75, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図８５は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．０６λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 85, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.06λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図８６は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 86, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図８７は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 87, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図８８は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．０６λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 88, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.06λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図８９は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 89, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図９０は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 90, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図９１は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．７５、Ａｌ膜の膜厚が０．０６λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 91, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.75, the Al film thickness is 0.06λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図９２は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．７５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 92, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.75, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図９３は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．７５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 93, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.75, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図９４は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．０６λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 94, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.06λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図９５は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 95, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図９６は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 96, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図９７は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．０６λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 97, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.06λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図９８は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 98, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図９９は、ＳｉＯ２膜の膜厚が０．４５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 99, the SiO 2 film thickness is 0.45λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１００は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．７５、Ａｌ膜の膜厚が０．０６λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合ののカット角とＳＶ波比帯域との関係を示す図である。In FIG. 100, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.75, the Al film thickness is 0.06λ, and the total Pt film thickness is 0. It is a figure which shows the relationship between the cut angle in the case of 0.02λ, 0.025λ, or 0.03λ and the SV wave ratio band. 図１０１は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．７５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 101, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.75, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１０２は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．７５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 102, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.75, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１０３は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．０６λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 103, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.06λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１０４は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 104, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１０５は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 105, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１０６は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．０６λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 106, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.06λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１０７は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 107, the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１０８は、ＳｉＯ２膜の膜厚が０．５０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。FIG. 108 shows that the SiO 2 film thickness is 0.50λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１０９は、ＳｉＯ２膜の膜厚が０．３０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。FIG. 109 shows that the SiO 2 film thickness is 0.30λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１１０は、ＳｉＯ２膜の膜厚が０．３０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 110, the SiO 2 film thickness is 0.30λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１１１は、ＳｉＯ２膜の膜厚が０．３０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 111, the SiO 2 film thickness is 0.30λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１１２は、ＳｉＯ２膜の膜厚が０．３０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 112, the SiO 2 film thickness is 0.30λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１１３は、ＳｉＯ２膜の膜厚が０．３０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 113, the SiO 2 film thickness is 0.30λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１１４は、ＳｉＯ２膜の膜厚が０．３０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 114, the SiO 2 film thickness is 0.30λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１１５は、ＳｉＯ２膜の膜厚が０．３０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．９０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 115, the SiO 2 film thickness is 0.30λ, the ratio of the first Pt film to the total Pt film thickness is 0.90, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１１６は、ＳｉＯ２膜の膜厚が０．３０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．９０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 116, the SiO 2 film thickness is 0.30λ, the ratio of the first Pt film to the total Pt film thickness is 0.90, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１１７は、ＳｉＯ２膜の膜厚が０．３０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．９０、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 117, the SiO 2 film thickness is 0.30λ, the ratio of the first Pt film to the total Pt film thickness is 0.90, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１１８は、ＳｉＯ２膜の膜厚が０．３５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 118, the SiO 2 film thickness is 0.35λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１１９は、ＳｉＯ２膜の膜厚が０．３５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。FIG. 119 shows that the SiO 2 film thickness is 0.35λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１２０は、ＳｉＯ２膜の膜厚が０．３５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 120, the SiO 2 film thickness is 0.35λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１２１は、ＳｉＯ２膜の膜厚が０．３５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 121, the SiO 2 film thickness is 0.35λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１２２は、ＳｉＯ２膜の膜厚が０．３５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 122, the SiO 2 film thickness is 0.35λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１２３は、ＳｉＯ２膜の膜厚が０．３５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 123, the SiO 2 film thickness is 0.35λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１２４は、ＳｉＯ２膜の膜厚が０．３５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．９０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 124, the SiO 2 film thickness is 0.35λ, the ratio of the first Pt film to the total Pt film thickness is 0.90, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１２５は、ＳｉＯ２膜の膜厚が０．３５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．９０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 125, the SiO 2 film thickness is 0.35λ, the ratio of the first Pt film to the total Pt film thickness is 0.90, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１２６は、ＳｉＯ２膜の膜厚が０．３５λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．９０、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 126, the SiO 2 film thickness is 0.35λ, the ratio of the first Pt film to the total Pt film thickness is 0.90, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１２７は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 127, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１２８は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 128, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１２９は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８０、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 129, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.80, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１３０は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 130, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１３１は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 131, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１３２は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．８５、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 132, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.85, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１３３は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．９０、Ａｌ膜の膜厚が０．０８λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 133, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.90, the Al film thickness is 0.08λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１３４は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．９０、Ａｌ膜の膜厚が０．１０λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 134, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.90, the Al film thickness is 0.10λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１３５は、ＳｉＯ２膜の膜厚が０．４０λ、第１のＰｔ膜のＰｔ膜厚合計に対する比が０．９０、Ａｌ膜の膜厚が０．１２λであり、Ｐｔ膜厚合計が０．０２λ、０．０２５λまたは０．０３λの場合のＬｉＮｂＯ３のカット角とＳＶ波比帯域との関係を示す図である。In FIG. 135, the SiO 2 film thickness is 0.40λ, the ratio of the first Pt film to the total Pt film thickness is 0.90, the Al film thickness is 0.12λ, and the total Pt film thickness is 0. .02Ramuda, is a diagram showing a relationship between a cut angle and SV wave ratio band of LiNbO 3 in the case of 0.025λ or 0.03. 図１３６は、本発明の第７の実施形態において、第４の電極層であるＡｌ膜の膜厚と周波数温度係数ＴＣＦとの関係を示す図である。FIG. 136 is a diagram showing the relationship between the thickness of the Al film as the fourth electrode layer and the frequency temperature coefficient TCF in the seventh embodiment of the present invention.
　（第１の実施形態）
　以下、本発明を実施した好ましい形態の一例について、図１に示す弾性境界波装置１を例に挙げて説明する。なお、弾性境界波装置１の種類は特に限定されず、弾性境界波装置１は、例えば、弾性境界波共振子であってもよいし、弾性境界波フィルタ装置であってもよい。 (First embodiment)
Hereinafter, an example of a preferable embodiment in which the present invention is implemented will be described using the boundary acoustic wave device 1 shown in FIG. 1 as an example. In addition, the kind of boundary acoustic wave apparatus 1 is not specifically limited, The boundary acoustic wave apparatus 1 may be a boundary acoustic wave resonator, for example, and may be a boundary acoustic wave filter apparatus.
　図１に示すように、弾性境界波装置１は、第１の媒質１１と、第２の媒質１２と、第３の媒質１３とを備えている。第１の媒質１１は、圧電体からなる。第１の媒質１１を構成する圧電体の種類は特に限定されない。第１の媒質１１は、例えば、例えば、０°～３７°回転ＹカットＬｉＮｂＯ３基板などのＬｉＮｂＯ３基板やＬｉＴａＯ３基板などにより構成することができる。 As shown in FIG. 1, the boundary acoustic wave device 1 includes a first medium 11, a second medium 12, and a third medium 13. The first medium 11 is made of a piezoelectric body. The type of the piezoelectric body that constitutes the first medium 11 is not particularly limited. The first medium 11 can be composed of, for example, a LiNbO 3 substrate such as a 0 ° to 37 ° rotated Y-cut LiNbO 3 substrate, a LiTaO 3 substrate, or the like.
　第１の媒質１１の上には、第２の媒質１２が形成されている。さらに、第２の媒質１２の上には、第３の媒質１３が形成されている。第２及び第３の媒質１２，１３のそれぞれは、誘電体からなる。第２及び第３の媒質１２，１３の形成材料は、第２の媒質１２の音速が第１及び第３の媒質１１，１３の音速よりも遅くなるように選択されている。例えば、第２の媒質１２をＳｉＯ２などの酸化ケイ素からなるものとし、第３の媒質１３を、ケイ素、窒化ケイ素、酸窒化ケイ素、炭化ケイ素、酸化アルミニウム、窒化アルミニウム、ダイヤモンドライクカーボン（ＤＬＣ）などからなるものとすることができる。このように、第２の媒質１２を酸化ケイ素からなるものとした場合、周波数温度特性を改善することができる。また、第３の媒質１３は、ＳｉＮなどの窒化ケイ素からなることがより好ましい。この場合、加工が容易となるためである。 A second medium 12 is formed on the first medium 11. Furthermore, a third medium 13 is formed on the second medium 12. Each of the second and third media 12 and 13 is made of a dielectric. The forming materials of the second and third media 12 and 13 are selected so that the sound speed of the second medium 12 is slower than the sound speed of the first and third media 11 and 13. For example, the second medium 12 is made of silicon oxide such as SiO 2 , and the third medium 13 is silicon, silicon nitride, silicon oxynitride, silicon carbide, aluminum oxide, aluminum nitride, diamond-like carbon (DLC). Or the like. As described above, when the second medium 12 is made of silicon oxide, the frequency temperature characteristics can be improved. The third medium 13 is more preferably made of silicon nitride such as SiN. In this case, it is because processing becomes easy.
　第２及び第３の媒質１２，１３の厚みは特に限定されない。例えば、第２の媒質１２の厚みは、後述するＩＤＴ電極２０において発生する弾性境界波の波長をλとした場合に、０．３λ～０．７λの範囲内にあることが好ましい。換言すれば、第２の媒質１２の厚みをＨとすれば、０．３＜Ｈ／λ＜０．７が満たされることが好ましい。一方、第３の媒質１３の厚みは、第３の媒質１３の表面における弾性波の変位量が実質的にゼロとなるような厚みであることが好ましい。具体的には、第３の媒質１３の厚みは、例えば、０．６λ～２λの範囲内にあることが好ましい。同様に、第１の媒質１１の厚みも、第１の媒質１１の表面における弾性波の変位量が実質的にゼロとなるような厚みであることが好ましい。 The thickness of the second and third media 12 and 13 is not particularly limited. For example, the thickness of the second medium 12 is preferably in the range of 0.3λ to 0.7λ, where λ is the wavelength of the boundary acoustic wave generated in the IDT electrode 20 described later. In other words, if the thickness of the second medium 12 is H, it is preferable that 0.3 <H / λ <0.7 is satisfied. On the other hand, the thickness of the third medium 13 is preferably such that the amount of displacement of the elastic wave on the surface of the third medium 13 is substantially zero. Specifically, the thickness of the third medium 13 is preferably in the range of 0.6λ to 2λ, for example. Similarly, the thickness of the first medium 11 is also preferably such that the amount of elastic wave displacement on the surface of the first medium 11 is substantially zero.
　なお、第２及び第３の媒質１２，１３の形成方法は特に限定されず、例えば、スパッタ法、蒸着法、ＣＶＤ法、スピンコート法、貼り合わせ法などを用いて第２及び第３の媒質１２，１３を形成することができる。 The method for forming the second and third media 12 and 13 is not particularly limited. For example, the second and third media can be formed using a sputtering method, a vapor deposition method, a CVD method, a spin coating method, a bonding method, or the like. 12, 13 can be formed.
　第１の媒質１１と第２の媒質１２との境界には、ＩＤＴ電極２０が形成されている。ＩＤＴ電極２０と、第１の媒質１１との間には、例えば、Ｔａ２Ｏ５などの酸化タンタルからなる誘電体層１４が形成されている。この誘電体層１４を形成しておくことにより、耐サージ性を向上することができる。ただし、本発明において、誘電体層１４は必須ではなく、ＩＤＴ電極２０が第１の媒質１１の上に直接形成されていてもよい。 An IDT electrode 20 is formed at the boundary between the first medium 11 and the second medium 12. A dielectric layer 14 made of tantalum oxide such as Ta 2 O 5 is formed between the IDT electrode 20 and the first medium 11. By forming the dielectric layer 14, surge resistance can be improved. However, in the present invention, the dielectric layer 14 is not essential, and the IDT electrode 20 may be formed directly on the first medium 11.
　ＩＤＴ電極２０は、積層された少なくとも３つの電極層を有する。具体的には、ＩＤＴ電極２０は、第１の媒質１１の上に形成されている第１の電極層２１と、第１の電極層２１の上に形成されている第２の電極層２２と、第２の電極層２２の上に形成されている第３の電極層２３とを有する。これら第１～第３の電極層２１～２３のうち、上下の第１及び第３の電極層２１，２３は、比較的高い密度を有する。一方、第１及び第３の電極層２１，２３の間に位置する第２の電極層２２は、第１及び第３の電極層２１，２３のそれぞれよりも密度が低い。 The IDT electrode 20 has at least three electrode layers stacked. Specifically, the IDT electrode 20 includes a first electrode layer 21 formed on the first medium 11, and a second electrode layer 22 formed on the first electrode layer 21. And a third electrode layer 23 formed on the second electrode layer 22. Of the first to third electrode layers 21 to 23, the upper and lower first and third electrode layers 21 and 23 have a relatively high density. On the other hand, the density of the second electrode layer 22 positioned between the first and third electrode layers 21 and 23 is lower than that of the first and third electrode layers 21 and 23, respectively.
　第１～第３の電極層２１～２３の形成材料は、第２の電極層２２の密度が第１及び第３の電極層２１，２３の密度より低くなる限りにおいて特に限定されない。第１及び第３の電極層２１，２３のそれぞれは、例えば、Ａｕ，Ｐｔ，Ｗ，Ｔａ，Ａｇ及びＣｕからなる群から選ばれた金属またはＡｕ，Ｐｔ，Ｗ，Ｔａ，Ａｇ及びＣｕからなる群から選ばれた一種以上の金属を主成分とする合金からなるものであってもよい。第２の電極層２２は、Ａｌ，Ｔｉ，Ｍｇ，Ｃｒ，Ｆｅ，Ｎｉ，Ａｇ及びＣｕからなる群から選ばれた金属またはＡｌ，Ｔｉ，Ｍｇ，Ｃｒ，Ｆｅ，Ｎｉ，Ａｇ及びＣｕからなる群から選ばれた一種以上の金属を主成分とする合金からなるものであってもよい。なかでも、例えば、第１及び第３の電極層２１，２３のそれぞれがＰｔまたはＰｔを主成分とする合金からなり、第２の電極層２２がＡｌまたはＡｌを主成分とする合金からなることが好ましい。この場合、ＩＤＴ電極２０の低抵抗化と高信頼性とを両立させることができるからである。 The forming material of the first to third electrode layers 21 to 23 is not particularly limited as long as the density of the second electrode layer 22 is lower than the density of the first and third electrode layers 21 and 23. Each of the first and third electrode layers 21 and 23 is made of, for example, a metal selected from the group consisting of Au, Pt, W, Ta, Ag, and Cu, or Au, Pt, W, Ta, Ag, and Cu. You may consist of an alloy which has as a main component 1 or more types of metals chosen from the group. The second electrode layer 22 is a metal selected from the group consisting of Al, Ti, Mg, Cr, Fe, Ni, Ag and Cu, or a group consisting of Al, Ti, Mg, Cr, Fe, Ni, Ag and Cu. It may be made of an alloy containing as a main component one or more metals selected from Among these, for example, each of the first and third electrode layers 21 and 23 is made of Pt or an alloy containing Pt as a main component, and the second electrode layer 22 is made of Al or an alloy containing Al as a main component. Is preferred. In this case, it is possible to achieve both low resistance and high reliability of the IDT electrode 20.
　ところで、弾性境界波装置１の製造に際しては、第２の媒質１２の厚みを調整した後に、第３の媒質１３を形成することにより、周波数特性などの諸特性が調整される。この場合、第２の媒質１２の形成時に、周波数特性がねらいの周波数特性から大きくずれていた場合には、第２の媒質１２の厚みを大きく変更する必要がある。 Incidentally, when the boundary acoustic wave device 1 is manufactured, various characteristics such as frequency characteristics are adjusted by forming the third medium 13 after adjusting the thickness of the second medium 12. In this case, when the second medium 12 is formed, if the frequency characteristic deviates greatly from the intended frequency characteristic, it is necessary to largely change the thickness of the second medium 12.
　ここで、第２の媒質１２の厚みは、通常、高次モードの音速と相関するため、第２の媒質１２の厚みが変化すると、高次モードの音速も変化することとなる。高次モードの音速が変化すると、高次モードの第１及び第３の媒質１１，１３への漏洩しやすさも変化する。このため、高次モードスプリアスの大きさも変化する。具体的には、高次モードの音速が速くなると、高次モードが第１及び第３の媒質１１，１３に漏洩しやすくなり、高次モードスプリアスの大きさが小さくなる。一方、高次モードの音速が遅くなると、高次モードが第２の媒質に閉じこもって第１及び第３の媒質１１，１３に漏洩しにくくなり、高次モードスプリアスの大きさが大きくなる。従って、第２の媒質１２の厚みを調整することにより周波数特性等を調整した場合、高次モードスプリアスの大きさが所望の大きさより大きくなり、得られる弾性境界波装置が不良となる場合がある。その結果、弾性境界波装置の歩留まりが低下する場合がある。 Here, since the thickness of the second medium 12 is generally correlated with the sound speed of the higher order mode, the sound speed of the higher order mode also changes when the thickness of the second medium 12 changes. When the sound speed in the higher order mode changes, the ease of leakage to the first and third media 11 and 13 in the higher order mode also changes. For this reason, the magnitude of higher order mode spurs also changes. Specifically, when the sound speed of the higher-order mode is increased, the higher-order mode is liable to leak to the first and third media 11 and 13, and the magnitude of the higher-order mode spurious is reduced. On the other hand, when the sound speed of the higher-order mode becomes slower, the higher-order mode is confined to the second medium and is less likely to leak into the first and third media 11 and 13, and the magnitude of the higher-order mode spurious increases. Therefore, when the frequency characteristic or the like is adjusted by adjusting the thickness of the second medium 12, the size of the higher-order mode spurious becomes larger than a desired size, and the obtained boundary acoustic wave device may be defective. . As a result, the yield of the boundary acoustic wave device may decrease.
　このような問題に鑑み、本発明者は、鋭意研究の結果、ＩＤＴ電極２０の膜構成を工夫することにより、第２の媒質１２の厚みの変化に伴う高次モードの音速の変化を抑制できることを見出した。その結果、高次モードスプリアスの大きさを大きく変化させることなく、第２の媒質１２の厚みを調整して周波数特性等の調整を行い得る本実施形態の弾性境界波装置を想到するに至った。以下、このことについて、具体例に基づいてより詳細に説明する。 In view of such a problem, as a result of earnest research, the present inventor can suppress the change in the sound speed of the higher-order mode accompanying the change in the thickness of the second medium 12 by devising the film configuration of the IDT electrode 20. I found. As a result, the boundary acoustic wave device of the present embodiment has been conceived in which the frequency characteristics and the like can be adjusted by adjusting the thickness of the second medium 12 without greatly changing the magnitude of the higher-order mode spurious. . Hereinafter, this will be described in more detail based on a specific example.
　まず、本発明者は、下記の設計パラメータの弾性境界波装置において、ｈ３／（ｈ１＋ｈ３）を種々変化させて第２の媒質１２の厚みと高次モードの音速との関係を調べた。その結果を、図２～図６に示す。 First, the inventor examined the relationship between the thickness of the second medium 12 and the sound speed of the higher-order mode by changing h3 / (h1 + h3) variously in the boundary acoustic wave device having the following design parameters. The results are shown in FIGS.
　（図２～図６における設計パラメータ）
　第１の媒質１１：２０°ＹカットＸ伝搬ＬｉＮｂＯ３基板
　第２の媒質：ＳｉＯ２膜
　第３の媒質：ＳｉＮ膜
　第３の媒質の厚み：１．０λ
　ＩＤＴ電極２０の電極指ピッチで定められる波長（λ）：１．９μｍ
　第１及び第３の電極層２１，２３の材料：Ｐｔ
　第２の電極層２２の材料：Ａｌ
　第１の電極層２１の厚みと第３の電極層２３の厚みとの合計（ｈ１＋ｈ３）：０．０６λ
　第２の電極層２２の厚み（ｈ２）：０．１４λ (Design parameters in FIGS. 2 to 6)
First medium 11: 20 ° Y-cut X-propagation LiNbO 3 substrate Second medium: SiO 2 film Third medium: SiN film Third medium thickness: 1.0λ
Wavelength (λ) determined by the electrode finger pitch of the IDT electrode 20: 1.9 μm
Material of the first and third electrode layers 21 and 23: Pt
Material of the second electrode layer 22: Al
Sum of the thickness of the first electrode layer 21 and the thickness of the third electrode layer 23 (h1 + h3): 0.06λ
Thickness (h2) of second electrode layer 22: 0.14λ
　図２は、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 2 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher order mode when h3 / (h1 + h3) is 0.30.
　図３は、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 3 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.55.
　図４は、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 4 is a graph showing the relationship between the thickness (H) of the second medium 12 and the speed of sound in the higher mode when h3 / (h1 + h3) is 0.70.
　図５は、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 5 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.90.
　図６は、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when h3 / (h1 + h3) is 0.95.
　図２に示す結果から、ｈ３／（ｈ１＋ｈ３）が０．３０と小さい場合は、第２の媒質１２の厚み（Ｈ）の変化にともなって、高次モードの音速が大きく変化することが分かる。具体的には、第２の媒質１２の厚み（Ｈ）が厚くなるに伴って、高次モードの音速が急激に低下することが分かる。この結果から、例えば、周波数特性等を調整するために、第２の媒質１２の厚み（Ｈ）を薄くした場合には、高次モードスプリアスの大きさが小さくなるものの、第２の媒質１２の厚み（Ｈ）を厚くした場合には、高次モードスプリアスの大きさが大きくなることが分かる。従って、ｈ３／（ｈ１＋ｈ３）が０．３０と小さい場合は、周波数特性等の調整のために調整できる第２の媒質１２の厚み（Ｈ）の範囲が狭く、場合によっては、周波数特性等が好適となるように調整できない場合がある。また、周波数特性等の調整のために第２の媒質１２の厚み（Ｈ）を大きく調整した場合は、高次モードスプリアスの大きさが大きくなりすぎ、不良となる場合がある。従って、弾性境界波装置の歩留まりが低くなる。 2 that when h3 / (h1 + h3) is as small as 0.30, the sound speed of the higher-order mode greatly changes with the change in the thickness (H) of the second medium 12. Specifically, it can be seen that as the thickness (H) of the second medium 12 increases, the sound speed of the higher-order mode rapidly decreases. From this result, for example, when the thickness (H) of the second medium 12 is reduced in order to adjust the frequency characteristics and the like, the magnitude of the higher-order mode spurious is reduced, but the second medium 12 It can be seen that when the thickness (H) is increased, the magnitude of the higher-order mode spurious increases. Therefore, when h3 / (h1 + h3) is as small as 0.30, the range of the thickness (H) of the second medium 12 that can be adjusted for adjusting the frequency characteristics is narrow, and in some cases, the frequency characteristics are preferable. In some cases, the adjustment cannot be made. In addition, when the thickness (H) of the second medium 12 is adjusted to be large for adjusting the frequency characteristics and the like, the magnitude of the higher-order mode spurious becomes too large and may be defective. Therefore, the yield of the boundary acoustic wave device is lowered.
　それに対して、図３～図６に示す結果から、ｈ３／（ｈ１＋ｈ３）が大きい場合は、第２の媒質１２の厚み（Ｈ）に対する高次モードの音速の依存性が低いことが分かる。また、ｈ３／（ｈ１＋ｈ３）が大きくなるにつれて、第２の媒質１２の厚み（Ｈ）に対する高次モードの音速の依存性が低下することが分かる。具体的には、ｈ３／（ｈ１＋ｈ３）が０．５５以下である場合には、第２の媒質１２の厚み（Ｈ）に対する高次モードの音速の依存性が大きい。これに対して、ｈ３／（ｈ１＋ｈ３）を０．５５より大きくすることによって、第２の媒質１２の厚み（Ｈ）に対する高次モードの音速の依存性を十分に小さくできることが分かる。すなわち、ｈ３／（ｈ１＋ｈ３）を０．５５より大きくした場合は、第２の媒質１２の厚み（Ｈ）を変化に伴って高次モードの音速が変化することを効果的に抑制することができる。よって、ｈ３／（ｈ１＋ｈ３）を０．５５より大きく０．９５未満とすることにより、第２の媒質１２の厚み（Ｈ）の変化に伴って高次モードスプリアスの大きさが変化することを効果的に抑制することができる。このため、０．５５＜ｈ３／（ｈ１＋ｈ３）＜０．９５とした場合は、第２の媒質１２の厚み（Ｈ）を自由に変化させて周波数特性等の調整を行うことができる。よって、第２の媒質１２の厚み（Ｈ）を大きく変化させた場合であっても、高次モードスプリアスの大きさが大きくなりすぎることを効果的に抑制することができる。従って、高い歩留まりで弾性境界波装置１を製造することができる。 On the other hand, it can be seen from the results shown in FIGS. 3 to 6 that when h3 / (h1 + h3) is large, the dependence of the sound velocity of the higher mode on the thickness (H) of the second medium 12 is low. It can also be seen that as h3 / (h1 + h3) increases, the dependence of the higher-order mode sound velocity on the thickness (H) of the second medium 12 decreases. Specifically, when h3 / (h1 + h3) is 0.55 or less, the dependence of the sound speed of the higher mode on the thickness (H) of the second medium 12 is large. On the other hand, it can be seen that by making h3 / (h1 + h3) larger than 0.55, the dependence of the sound velocity of the higher mode on the thickness (H) of the second medium 12 can be made sufficiently small. That is, when h3 / (h1 + h3) is greater than 0.55, it is possible to effectively suppress the change in the sound speed of the higher-order mode with the change in the thickness (H) of the second medium 12. . Therefore, by setting h3 / (h1 + h3) to be greater than 0.55 and less than 0.95, it is effective that the magnitude of the higher-order mode spurious changes with the change in the thickness (H) of the second medium 12. Can be suppressed. For this reason, when 0.55 <h3 / (h1 + h3) <0.95, the thickness (H) of the second medium 12 can be freely changed to adjust the frequency characteristics and the like. Therefore, even when the thickness (H) of the second medium 12 is largely changed, it is possible to effectively suppress the size of the high-order mode spurious from becoming too large. Therefore, the boundary acoustic wave device 1 can be manufactured with a high yield.
　また、ｈ３／（ｈ１＋ｈ３）を０．７より大きくした場合は、第２の媒質１２の厚み（Ｈ）を変化に伴って高次モードの音速が変化することをさらに効果的に抑制できる。従って、０．７＜ｈ３／（ｈ１＋ｈ３）＜０．９５とすることにより、より高い歩留まりで弾性境界波装置１を製造することができる。 In addition, when h3 / (h1 + h3) is set to be greater than 0.7, it is possible to more effectively suppress the change in the sound speed of the higher mode with the change in the thickness (H) of the second medium 12. Therefore, by setting 0.7 <h3 / (h1 + h3) <0.95, the boundary acoustic wave device 1 can be manufactured with a higher yield.
　さらに、図２～図６に示す結果から、ｈ３／（ｈ１＋ｈ３）を所定の範囲としつつ、第２の媒質１２の厚み（Ｈ）を、０．３＜Ｈ／λ＜０．７とすることにより、第２の媒質１２の厚み（Ｈ）の変化に伴って高次モードの音速が変化することを特に効果的に抑制できる。従って、第２の媒質１２の厚み（Ｈ）は、０．３λ～０．７λであることが好ましい。 Further, from the results shown in FIGS. 2 to 6, the thickness (H) of the second medium 12 is set to 0.3 <H / λ <0.7 while h3 / (h1 + h3) is in a predetermined range. Thus, it is possible to particularly effectively suppress the change in the sound speed of the higher mode with the change in the thickness (H) of the second medium 12. Therefore, the thickness (H) of the second medium 12 is preferably 0.3λ to 0.7λ.
　次に、第２の電極層２２の厚み（ｈ２）が０．０７λまたは０．２０λである場合についても同様に、ｈ３／（ｈ１＋ｈ３）を種々変化させて第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を調べた。その結果を、図７～図１６に示す。また、第１及び第３の電極層２１，２３の厚みの合計（ｈ１＋ｈ３）を０．０４λとした場合についても同様に、ｈ３／（ｈ１＋ｈ３）を種々変化させて第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を調べた。その結果を、図１７～図２１に示す。 Next, when the thickness (h2) of the second electrode layer 22 is 0.07λ or 0.20λ, similarly, the thickness (H) of the second medium 12 is changed by variously changing h3 / (h1 + h3). And the sound speed of higher order modes were investigated. The results are shown in FIGS. Similarly, when the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is set to 0.04λ, h3 / (h1 + h3) is variously changed to change the thickness of the second medium 12 ( The relationship between H) and higher-order mode sound speed was investigated. The results are shown in FIGS.
　図７は、第２の電極層２２の厚み（ｈ２）が０．０７λであり、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 7 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07λ and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship.
　図８は、第２の電極層２２の厚み（ｈ２）が０．０７λであり、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 8 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07λ and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship.
　図９は、第２の電極層２２の厚み（ｈ２）が０．０７λであり、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 9 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07λ and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship.
　図１０は、第２の電極層２２の厚み（ｈ２）が０．０７λであり、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 10 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07λ and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship.
　図１１は、第２の電極層２２の厚み（ｈ２）が０．０７λであり、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 11 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.07λ and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship.
　図１２は、第２の電極層２２の厚み（ｈ２）が０．２０λであり、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 12 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20λ and h3 / (h1 + h3) is 0.30. It is a graph showing the relationship.
　図１３は、第２の電極層２２の厚み（ｈ２）が０．２０λであり、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 13 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20λ and h3 / (h1 + h3) is 0.55. It is a graph showing the relationship.
　図１４は、第２の電極層２２の厚み（ｈ２）が０．２０λであり、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 14 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20λ and h3 / (h1 + h3) is 0.70. It is a graph showing the relationship.
　図１５は、第２の電極層２２の厚み（ｈ２）が０．２０λであり、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 15 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20λ and h3 / (h1 + h3) is 0.90. It is a graph showing the relationship.
　図１６は、第２の電極層２２の厚み（ｈ２）が０．２０λであり、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 16 shows the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when the thickness (h2) of the second electrode layer 22 is 0.20λ and h3 / (h1 + h3) is 0.95. It is a graph showing the relationship.
　図１７は、第１及び第３の電極層２１，２３の厚みの合計（ｈ１＋ｈ３）が０．０４λ、第２の電極層２２の厚み（ｈ２）が０．１４λであり、ｈ３／（ｈ１＋ｈ３）が０．３０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 17 shows that the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04λ, the thickness (h2) of the second electrode layer 22 is 0.14λ, and h3 / (h1 + h3). 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.30.
　図１８は、第１及び第３の電極層２１，２３の厚みの合計（ｈ１＋ｈ３）が０．０４λ、第２の電極層２２の厚み（ｈ２）が０．１４λであり、ｈ３／（ｈ１＋ｈ３）が０．５５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 In FIG. 18, the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04λ, the thickness (h2) of the second electrode layer 22 is 0.14λ, and h3 / (h1 + h3). 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.55.
　図１９は、第１及び第３の電極層２１，２３の厚みの合計（ｈ１＋ｈ３）が０．０４λ、第２の電極層２２の厚み（ｈ２）が０．１４λであり、ｈ３／（ｈ１＋ｈ３）が０．７０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 In FIG. 19, the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04λ, the thickness (h2) of the second electrode layer 22 is 0.14λ, and h3 / (h1 + h3). 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode when is 0.70.
　図２０は、第１及び第３の電極層２１，２３の厚みの合計（ｈ１＋ｈ３）が０．０４λ、第２の電極層２２の厚み（ｈ２）が０．１４λであり、ｈ３／（ｈ１＋ｈ３）が０．９０のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 In FIG. 20, the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.04λ, the thickness (h2) of the second electrode layer 22 is 0.14λ, and h3 / (h1 + h3). 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.90.
　図２１は、第１及び第３の電極層２１，２３の厚み（ｈ１＋ｈ３）の合計が０．０４λ、第２の電極層２２の厚み（ｈ２）が０．１４λであり、ｈ３／（ｈ１＋ｈ３）が０．９５のときの第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を表すグラフである。 FIG. 21 shows that the total thickness (h1 + h3) of the first and third electrode layers 21, 23 is 0.04λ, the thickness (h2) of the second electrode layer 22 is 0.14λ, and h3 / (h1 + h3). 6 is a graph showing the relationship between the thickness (H) of the second medium 12 and the sound speed of a higher-order mode when is 0.95.
　図２～図６に示す結果と共に、図７～図１６に示す結果を参照する。その結果、第２の電極層２２の厚み（ｈ２）に関わらず、ｈ３／（ｈ１＋ｈ３）が大きくなるほど第２の媒質１２の厚み（Ｈ）の変化に対する高次モードの音速の依存性が低くなることが分かる。また、ｈ３／（ｈ１＋ｈ３）を０．５５～０．９５、好ましくは０．７～０．９５とすることにより、第２の媒質１２の厚み（Ｈ）に関わらず、高次モードの音速を安定させることができる。従って、第２の媒質１２の厚み（Ｈ）を調整したときに、高次モードスプリアスの大きさが大きくなりすぎることを効果的に抑制できることが分かる。 Refer to the results shown in FIGS. 7 to 16 together with the results shown in FIGS. As a result, regardless of the thickness (h2) of the second electrode layer 22, as h3 / (h1 + h3) increases, the dependency of the sound velocity of the higher mode on the change in the thickness (H) of the second medium 12 decreases. I understand that. Further, by setting h3 / (h1 + h3) to 0.55 to 0.95, preferably 0.7 to 0.95, the sound speed of the higher-order mode can be increased regardless of the thickness (H) of the second medium 12. It can be stabilized. Therefore, it can be seen that, when the thickness (H) of the second medium 12 is adjusted, it is possible to effectively suppress the size of the higher-order mode spurs from becoming too large.
　また、第２の電極層２２の厚み（ｈ２）に関わらず、ｈ３／（ｈ１＋ｈ３）を所定の範囲としつつ、第２の媒質１２の厚み（Ｈ）を、０．３＜Ｈ／λ＜０．７とすることにより、第２の媒質１２の厚み（Ｈ）を変化に伴って高次モードの音速が変化することを特に効果的に抑制できる。従って、第２の電極層２２の厚みに関わらず、第２の媒質１２の厚み（Ｈ）は、０．３λ～０．７λであることが好ましいことが分かる。 Regardless of the thickness (h2) of the second electrode layer 22, the thickness (H) of the second medium 12 is set to 0.3 <H / λ <0 while h3 / (h1 + h3) is within a predetermined range. .7, it is possible to particularly effectively suppress the change in the sound speed of the higher-order mode accompanying the change in the thickness (H) of the second medium 12. Therefore, it can be seen that the thickness (H) of the second medium 12 is preferably 0.3λ to 0.7λ regardless of the thickness of the second electrode layer 22.
　なお、第２の電極層２２の厚み（ｈ２）は、０．０５λ～０．２５λの範囲内にあることが好ましい。第２の電極層２２の厚み（ｈ２）が小さすぎると、高次モードスプリアスの大きさの第２の媒質１２の厚み（Ｈ）に対する依存性を十分に低減できない場合がある。また、周波数温度特性が劣悪になる場合がある。一方、第２の電極層２２の厚み（ｈ２）が大きすぎると、電気機械結合係数が小さくなりすぎる場合や、ＩＤＴ電極２０の厚みが厚くなりすぎ、第３の媒質１３の形状が劣悪になる場合がある。 It should be noted that the thickness (h2) of the second electrode layer 22 is preferably in the range of 0.05λ to 0.25λ. If the thickness (h2) of the second electrode layer 22 is too small, the dependency of the magnitude of higher-order mode spurious on the thickness (H) of the second medium 12 may not be sufficiently reduced. In addition, the frequency temperature characteristic may be deteriorated. On the other hand, if the thickness (h2) of the second electrode layer 22 is too large, the electromechanical coupling coefficient becomes too small, or the thickness of the IDT electrode 20 becomes too thick, and the shape of the third medium 13 becomes poor. There is a case.
　次に、第１～第３の電極層２１～２３の材質を種々変更して、第２の媒質１２の厚み（Ｈ）と高次モードの音速との関係を調べた。その結果を、図２２～図４６に示す。なお、図２２～図４６において、第１及び第３の電極層２１，２３の厚みの合計（ｈ１＋ｈ３）は０．０６λであり、第２の電極層２２の厚み（ｈ２）は、０．１４λである。 Next, the materials of the first to third electrode layers 21 to 23 were variously changed, and the relationship between the thickness (H) of the second medium 12 and the sound speed of the higher-order mode was examined. The results are shown in FIGS. 22 to 46, the total thickness (h1 + h3) of the first and third electrode layers 21 and 23 is 0.06λ, and the thickness (h2) of the second electrode layer 22 is 0.14λ. It is.
　図２２～図２６：第１の電極層２１：Ａｕ／第２の電極層：Ａｌ／第３の電極層：Ａｕ
　図２７～図３１：第１の電極層２１：Ｗ／第２の電極層：Ａｌ／第３の電極層：Ｗ
　図３２～図３６：第１の電極層２１：Ｔａ／第２の電極層：Ａｌ／第３の電極層：Ｔａ
　図３７～図４１：第１の電極層２１：Ｃｕ／第２の電極層：Ａｌ／第３の電極層：Ｃｕ　図４２～図４６：第１の電極層２１：Ｐｔ／第２の電極層：Ｃｕ／第３の電極層：Ｐｔ
　図２２，図２７，図３２，図３７及び図４２におけるｈ３／（ｈ１＋ｈ３）：０．３０
　図２３，図２８，図３３，図３８及び図４３におけるｈ３／（ｈ１＋ｈ３）：０．５５
　図２４，図２９，図３４，図３９及び図４４におけるｈ３／（ｈ１＋ｈ３）：０．７０
　図２５，図３０，図３５，図４０及び図４５におけるｈ３／（ｈ１＋ｈ３）：０．９０
　図２６，図３１，図３６，図４１及び図４６におけるｈ３／（ｈ１＋ｈ３）：０．９５ 22 to 26: first electrode layer 21: Au / second electrode layer: Al / third electrode layer: Au
27 to 31: first electrode layer 21: W / second electrode layer: Al / third electrode layer: W
32 to 36: first electrode layer 21: Ta / second electrode layer: Al / third electrode layer: Ta
37 to 41: First electrode layer 21: Cu / second electrode layer: Al / third electrode layer: Cu FIGS. 42 to 46: First electrode layer 21: Pt / second electrode layer : Cu / third electrode layer: Pt
H3 / (h1 + h3) in FIGS. 22, 27, 32, 37 and 42: 0.30
H3 / (h1 + h3) in FIGS. 23, 28, 33, 38 and 43: 0.55
H3 / (h1 + h3): 0.70 in FIGS. 24, 29, 34, 39 and 44
H3 / (h1 + h3) in FIG. 25, FIG. 30, FIG. 35, FIG. 40 and FIG.
H3 / (h1 + h3) in FIGS. 26, 31, 36, 41 and 46: 0.95
　図２～図６に示す結果と共に、図２２～図４６に示す結果を参照する。これらの結果より、第１～第３の電極層２１，２３の材質に関わらず、ｈ３／（ｈ１＋ｈ３）が大きくなるほど第２の媒質１２の厚み（Ｈ）の変化に対する高次モードの音速の依存性が低くなることが分かる。また、ｈ３／（ｈ１＋ｈ３）を０．５５～０．９５、好ましくは０．７～０．９５とすることにより、第１～第３の電極層２１，２３の材質に関わらず、高次モードの音速を安定させることができる。従って、第２の媒質１２の厚み（Ｈ）を調整したときに、高次モードスプリアスの大きさが大きくなりすぎることを効果的に抑制できることが分かる。 Refer to the results shown in FIGS. 22 to 46 together with the results shown in FIGS. From these results, regardless of the material of the first to third electrode layers 21 and 23, the higher the h3 / (h1 + h3) is, the higher the mode speed depends on the change in the thickness (H) of the second medium 12. It turns out that property becomes low. Further, by setting h3 / (h1 + h3) to 0.55 to 0.95, preferably 0.7 to 0.95, a higher-order mode is achieved regardless of the material of the first to third electrode layers 21 and 23. The speed of sound can be stabilized. Therefore, it can be seen that, when the thickness (H) of the second medium 12 is adjusted, it is possible to effectively suppress the size of the higher-order mode spurs from becoming too large.
　また、第１～第３の電極層２１，２３の材質に関わらず、ｈ３／（ｈ１＋ｈ３）を所定の範囲としつつ、第２の媒質１２の厚み（Ｈ）を、０．３＜Ｈ／λ＜０．７とすることにより、第２の媒質１２の厚み（Ｈ）を変化に伴って高次モードの音速が変化することを特に効果的に抑制できる。従って、第１～第３の電極層２１，２３の材質に関わらず、第２の媒質１２の厚み（Ｈ）は、０．３λ～０．７λであることが好ましいことが分かる。 Regardless of the material of the first to third electrode layers 21 and 23, the thickness (H) of the second medium 12 is set to 0.3 <H / λ while h3 / (h1 + h3) is within a predetermined range. By setting it to <0.7, it can suppress especially effectively that the sound speed of a higher mode changes with the thickness (H) of the 2nd medium 12 changing. Therefore, it is understood that the thickness (H) of the second medium 12 is preferably 0.3λ to 0.7λ regardless of the material of the first to third electrode layers 21 and 23.
　次に、第１の媒質１１のカット角について検討した。図４７は、３７°ＹカットＬｉＮｂＯ３基板を第１の媒質として用いた場合のインピーダンス（Ｚ）特性を表すグラフである。図４８は、３７°ＹカットＬｉＮｂＯ３基板を第１の媒質として用いた場合の位相特性を表すグラフである。図４９は、０°ＹカットＬｉＮｂＯ３基板を第１の媒質として用いた場合のインピーダンス（Ｚ）特性を表すグラフである。図５０は、０°ＹカットＬｉＮｂＯ３基板を第１の媒質として用いた場合の位相特性を表すグラフである。 Next, the cut angle of the first medium 11 was examined. FIG. 47 is a graph showing impedance (Z) characteristics when a 37 ° Y-cut LiNbO 3 substrate is used as the first medium. FIG. 48 is a graph showing phase characteristics when a 37 ° Y-cut LiNbO 3 substrate is used as the first medium. FIG. 49 is a graph showing impedance (Z) characteristics when a 0 ° Y-cut LiNbO 3 substrate is used as the first medium. FIG. 50 is a graph showing phase characteristics when a 0 ° Y-cut LiNbO 3 substrate is used as the first medium.
　図４７～図５０に示す結果から、０°～３７°回転ＹカットＬｉＮｂＯ３基板を第１の媒質１１として用いた場合には、ＳＨ波の高次モードに起因するスプリアスが生じやすいことが分かる。従って、本実施形態の技術は、０°～３７°回転ＹカットＬｉＮｂＯ３基板を第１の媒質１１として用い、ＳＨ型の弾性境界波を用いる弾性境界波装置に特に有効であることが分かる。 From the results shown in FIG. 47 to FIG. 50, it is understood that when the 0 ° -37 ° rotated Y-cut LiNbO 3 substrate is used as the first medium 11, spurious due to the higher order mode of the SH wave is likely to occur. . Therefore, it can be seen that the technique of the present embodiment is particularly effective for a boundary acoustic wave device using an SH type boundary acoustic wave using a 0 ° to 37 ° rotated Y-cut LiNbO 3 substrate as the first medium 11.
　（第２の実施形態）
　図５１は、第２の実施形態に係る弾性境界波装置の略図的断面図である。図５１に示すように、本実施形態では、ＩＤＴ電極２０は、第１～第３の電極層２１～２３の上に形成されている第４の電極層２４をさらに備えている。このように、第４の電極層２４をさらに設けることにより、ＩＤＴ電極２０の抵抗をより低くすることができる。従って、弾性境界波装置の損失をより小さくすることができる。 (Second Embodiment)
FIG. 51 is a schematic cross-sectional view of a boundary acoustic wave device according to the second embodiment. As shown in FIG. 51, in this embodiment, the IDT electrode 20 further includes a fourth electrode layer 24 formed on the first to third electrode layers 21 to 23. Thus, by further providing the fourth electrode layer 24, the resistance of the IDT electrode 20 can be further reduced. Therefore, the loss of the boundary acoustic wave device can be further reduced.
　第４の電極層２４は、電気抵抗の低い材料、より具体的には、第１～第３の電極層２１～２３の材料の電気抵抗以下の電気抵抗を有する材料により形成されていることが好ましい。例えば、第４の電極層２４をＡｌまたはＡｌを主成分とする合金により形成することが好ましい。そうすることにより、ＩＤＴ電極２０の抵抗をさらに小さくでき、よって、弾性境界波装置の損失をさらに小さくすることができる。 The fourth electrode layer 24 is formed of a material having a low electrical resistance, more specifically, a material having an electrical resistance equal to or lower than that of the materials of the first to third electrode layers 21 to 23. preferable. For example, the fourth electrode layer 24 is preferably formed of Al or an alloy containing Al as a main component. By doing so, the resistance of the IDT electrode 20 can be further reduced, and therefore the loss of the boundary acoustic wave device can be further reduced.
　また、第４の電極層２４をＡｌにより形成した場合、第２の媒質１２を、ＳｉＯ２などの酸化ケイ素からなるものとすることが好ましい。Ａｌと酸化ケイ素とは、弾性定数及び密度のそれぞれが相互に近いため、第４の電極層２４を追加しても、基本モードの音速や電気機械結合係数、高次モードの音速などのような音響的な特性が変化しにくい。このため、音響的な特性を変化させずに、ＩＤＴ電極２０の抵抗を効果的に低減できる。 Further, when the fourth electrode layer 24 is formed of Al, it is preferable that the second medium 12 is made of silicon oxide such as SiO 2 . Since Al and silicon oxide have elastic constants and densities close to each other, even if the fourth electrode layer 24 is added, the sound velocity of the fundamental mode, the electromechanical coupling coefficient, the sound velocity of the higher mode, etc. The acoustic characteristics are difficult to change. For this reason, the resistance of the IDT electrode 20 can be effectively reduced without changing the acoustic characteristics.
　（第３の実施形態）
　図５２は、第３の実施形態に係る弾性境界波装置におけるＩＤＴ電極の略図的断面図である。図５２に示すように、第１の媒質１１と、第１の電極層２１との間、第１～第３の電極層２１～２３間、及び第３の電極層２３と第２の媒質１２との間に密着性の向上や拡散の抑制を図るための層２５ａ～２５ｄをさらに設けてもよい。なお、層２５ａ～２５ｄのそれぞれは、例えば、Ｔｉ，Ｎｉ，Ｃｒなどの金属またはＴｉ，Ｎｉ及びＣｒからなる群から選ばれた１種以上の金属を主成分とする合金などにより形成することができる。 (Third embodiment)
FIG. 52 is a schematic cross-sectional view of an IDT electrode in a boundary acoustic wave device according to a third embodiment. As shown in FIG. 52, between the first medium 11 and the first electrode layer 21, between the first to third electrode layers 21 to 23, and between the third electrode layer 23 and the second medium 12 Further, layers 25a to 25d for improving adhesion and suppressing diffusion may be further provided. Each of the layers 25a to 25d may be formed of, for example, a metal such as Ti, Ni, or Cr, or an alloy mainly composed of one or more metals selected from the group consisting of Ti, Ni, and Cr. it can.
　（第４の実施形態）
　図５３は、第４の実施形態に係る弾性境界波装置におけるＩＤＴ電極の略図的断面図である。 (Fourth embodiment)
FIG. 53 is a schematic cross-sectional view of an IDT electrode in a boundary acoustic wave device according to a fourth embodiment.
　上記第１の実施形態では、第１～第３の電極層２１～２３のそれぞれが単一の電極層により形成されている場合について説明した。但し、本発明はこの構成に限定されない。例えば、第１～第３の電極層２１～２３の少なくともひとつが複数の層により構成されていてもよい。また、その場合において、電極層を構成する複数の層の間に他の層が介在していてもよい。すなわち、第１～第３の電極層２１～２３の少なくともひとつは、例えば、他の層により複数の層に分割されていてもよい。例えば、図５３に示す例では、第２の電極層２２が、ＴｉやＣｕからなる層２２ａ、２２ｂにより３つの層に分割されている。 In the first embodiment, the case where each of the first to third electrode layers 21 to 23 is formed of a single electrode layer has been described. However, the present invention is not limited to this configuration. For example, at least one of the first to third electrode layers 21 to 23 may be composed of a plurality of layers. In that case, another layer may be interposed between a plurality of layers constituting the electrode layer. That is, at least one of the first to third electrode layers 21 to 23 may be divided into a plurality of layers by other layers, for example. For example, in the example shown in FIG. 53, the second electrode layer 22 is divided into three layers by layers 22a and 22b made of Ti or Cu.
　（第５の実施形態）
　図５４は、第５の実施形態に係る弾性境界波装置の略図的断面図である。 (Fifth embodiment)
FIG. 54 is a schematic cross-sectional view of a boundary acoustic wave device according to a fifth embodiment.
　上記第１の実施形態では、第２の媒質１２の表面が平坦である場合について説明したが、図５４に示すように、第２の媒質１２の表面は、ＩＤＴ電極２０の形状に即した形状とされていてもよい。同様に、第３の媒質１３の表面もＩＤＴ電極２０の形状に即した形状とされていてもよい。 In the first embodiment, the case where the surface of the second medium 12 is flat has been described. However, as shown in FIG. 54, the surface of the second medium 12 has a shape corresponding to the shape of the IDT electrode 20. It may be said. Similarly, the surface of the third medium 13 may be shaped according to the shape of the IDT electrode 20.
　（第６の実施形態）
　第６の実施形態は、第１の実施形態において、第１の媒質がＬｉＮｂＯ３基板、第２の媒質がＳｉＯ２膜であり、ＬｉＮｂＯ３のカット角、ＩＤＴ電極における各金属膜の厚み、ＳｉＯ２膜の厚み等が特定の範囲とされている点で第１の実施形態と異なる。本実施形態では、ストンリー波の応答によるスプリアスを効果的に抑圧することができる。これを、具体的な実験例に基づき説明する。 (Sixth embodiment)
In the sixth embodiment, the first medium is a LiNbO 3 substrate, the second medium is a SiO 2 film, the cut angle of LiNbO 3 , the thickness of each metal film in the IDT electrode, and the SiO 2 film in the first embodiment. It differs from the first embodiment in that the thickness of the two films is in a specific range. In the present embodiment, spurious due to the response of the Stoneley wave can be effectively suppressed. This will be described based on a specific experimental example.
　結果を図５５～図１３５に示す。なお、図５５～図１３５は、以下の第１のグループ～第３のグループに分けて説明する。 The results are shown in FIGS. 55 to 135 are described in the following first group to third group.
　第１のグループ～第３のグループは、それぞれ、特定のフィルタに用いるのに適しているＬｉＮｂＯ３のカット角、Ｐｔ膜厚合計（ｈ１＋ｈ３）、上Ｐｔ膜厚／Ｐｔ膜厚合計（ｈ３／（ｈ１＋ｈ３））、Ａｌ膜の膜厚（ｈ２）、及びＳｉＯ２膜の膜厚（Ｈ）の各パラメータの中心値を決定した。第１のグループ～第３のグループは、この中心値のまわりのパラメータを有するグループである。グループごとに詳細を説明することとする。 The first group to the third group are LiNbO 3 cut angles, Pt film thickness total (h1 + h3), and upper Pt film thickness / Pt film thickness total (h3 / () suitable for use in a specific filter, respectively. h1 + h3)), the thickness of the Al film (h2), and the central value of each parameter of the SiO 2 film (H). The first group to the third group are groups having parameters around the center value. Details will be explained for each group.
　なお、本願におけるＳＶ波比帯域は、ＳＶ波を主体とする境界波であるストンリー波の比帯域の意で用いている。ストンリー波の電気機械結合係数をＫとすると、およそ比帯域＝Ｋ２／２の関係にある。 In addition, the SV wave specific band in this application is used in the meaning of the specific band of the Stoneley wave which is a boundary wave mainly composed of SV waves. When the electromechanical coefficient of the Stoneley wave and K, is in the approximate fractional bandwidth = K 2/2 relationship.
　（第１のグループ）
　図５５～図８１は、ＬｉＮｂＯ３のカット角２５°、Ｐｔ膜厚合計２．４２％（対波長比）、上Ｐｔ膜厚／Ｐｔ膜厚合計０．５０、Ａｌ膜の膜厚９．２％（対波長比）、及びＳｉＯ２膜の膜厚４４．５％（対波長比）を中心とする、上記各パラメータとＳＶ波比帯域との関係を示す図である。 (First group)
55 to 81, the cut angle of LiNbO 3 is 25 °, the total Pt film thickness is 2.42% (ratio to wavelength), the upper Pt film thickness / the total Pt film thickness is 0.50, and the Al film thickness is 9.2. % (versus wavelength ratio), and the center 44.5% the thickness of the SiO 2 film (versus wavelength ratio) is a diagram showing the relationship between the parameters and SV wave ratio band.
　より具体的には、図５５～図６３は、ＳｉＯ２膜の膜厚が０．４０λの場合の結果を示す。ここで、図５５～図５７では、上Ｐｔ膜厚／Ｐｔ膜厚合計が０．４５、図５８～図６０では０．５０、図６１～図６３では０．５５の場合の結果が示されている。そして、図５５～図５７では、Ａｌ膜の膜厚が、０．０８λ、０．１０λまたは０．１２λとされており、図５８～図６０においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされており、図６１～図６３においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされている。 More specifically, FIGS. 55 to 63 show results when the thickness of the SiO 2 film is 0.40λ. 55 to 57 show the results when the upper Pt film thickness / Pt film thickness is 0.45, FIGS. 58 to 60 are 0.50, and FIGS. 61 to 63 are 0.55. ing. 55 to 57, the thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ. Also in FIGS. 58 to 60, the thickness of the Al film is 0.08λ, The thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ in FIGS. 61 to 63.
　そして、図５５～図６３においては、さらに、Ｐｔ膜厚合計を０．０２λ、０．０２５λまたは０．０３λに変化させた場合のＬｉＮｂＯ３のカット角と、ＳＶ波比帯域との関係が示されている。 55 to 63 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed to 0.02λ, 0.025λ, or 0.03λ. Has been.
　なお、図５５～図１３５において、図中のＰｔ＝０．０２λのような「Ｐｔ＝」で表される膜厚は、上記Ｐｔ膜厚合計を示すものとする。 In FIGS. 55 to 135, the film thickness represented by “Pt =” such as Pt = 0.02λ in the drawings represents the total Pt film thickness.
　図５５～図６３から明らかなように、ＬｉＮｂＯ３のカット角が２５°近辺の場合、ＳＶ波比帯域が非常に小さくなり、極小値となることがわかる。カット角が２５°から遠ざかるにつれ、いずれの場合においても、ＳＶ波比帯域が大きくなっていくことがわかる。 As is apparent from FIGS. 55 to 63, when the cut angle of LiNbO 3 is around 25 °, the SV wave ratio band becomes very small and becomes a minimum value. It can be seen that the SV wave ratio band increases in any case as the cut angle moves away from 25 °.
　図６４～図７２は、ＳｉＯ２膜の膜厚が０．４５λの場合の結果を示す。ここで、図６４～図６６では、上Ｐｔ膜厚／Ｐｔ膜厚合計が０．４５、図６７～図６９では０．５０、図７０～図７２では０．５５の場合の結果が示されている。そして、図６４～図６６では、Ａｌ膜の膜厚が、０．０８λ、０．１０λまたは０．１２λとされており、図６７～図６９においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされており、図７０～図７２においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされている。 FIGS. 64 to 72 show the results when the thickness of the SiO 2 film is 0.45λ. Here, FIGS. 64 to 66 show the results when the upper Pt film thickness / Pt film thickness is 0.45, FIGS. 67 to 69 are 0.50, and FIGS. 70 to 72 are 0.55. ing. 64 to 66, the film thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ. Also in FIGS. 67 to 69, the film thickness of the Al film is 0.08λ, The thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ in FIGS. 70 to 72 as well.
　そして、図６４～図７２においては、さらに、Ｐｔ膜厚合計を変化させた場合のＬｉＮｂＯ３のカット角と、ＳＶ波比帯域との関係が示されている。 64 to 72 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed.
　図６４～図７２から明らかなように、ＬｉＮｂＯ３のカット角が２５°近辺の場合、ＳＶ波比帯域が非常に小さくなり、極小値となることがわかる。カット角が２５°から遠ざかるにつれ、いずれの場合においても、ＳＶ波比帯域が大きくなっていくことがわかる。 As is apparent from FIGS. 64 to 72, when the cut angle of LiNbO 3 is around 25 °, the SV wave ratio band becomes very small and becomes a minimum value. It can be seen that the SV wave ratio band increases in any case as the cut angle moves away from 25 °.
　図７３～図８１は、ＳｉＯ２膜の膜厚が０．５０λの場合の結果を示す。ここで、図７３～図７５では、上Ｐｔ膜厚／Ｐｔ膜厚合計が０．４５、図７６～図７８では０．５０、図７９～図８１では０．５５の場合の結果が示されている。そして、図７３～図７５では、Ａｌ膜の膜厚が、０．０８λ、０．１０λまたは０．１２λとされており、図７６～図７８においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされており、図７９～図８１においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされている。 73 to 81 show results when the thickness of the SiO 2 film is 0.50λ. Here, FIGS. 73 to 75 show the results when the upper Pt film thickness / Pt film thickness is 0.45, FIGS. 76 to 78 are 0.50, and FIGS. 79 to 81 are 0.55. ing. 73 to 75, the film thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ. In FIGS. 76 to 78, the film thickness of the Al film is 0.08λ, The thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ in FIGS. 79 to 81 as well.
　そして、図７３～図８１においては、さらに、Ｐｔ膜厚合計を変化させた場合のＬｉＮｂＯ３のカット角と、ＳＶ波比帯域との関係が示されている。 73 to 81 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed.
　図７３～図８１から明らかなように、ＬｉＮｂＯ３のカット角が２５°近辺の場合、ＳＶ波比帯域が非常に小さくなり、極小値となることがわかる。カット角が２５°から遠ざかるにつれ、いずれの場合においても、ＳＶ波比帯域が大きくなっていくことがわかる。 As is apparent from FIGS. 73 to 81, when the cut angle of LiNbO 3 is around 25 °, the SV wave ratio band becomes very small and becomes a minimum value. It can be seen that the SV wave ratio band increases in any case as the cut angle moves away from 25 °.
　従って、図５５～図８１の結果をまとめると、０．５５＜ｈ３／（ｈ１＋ｈ３）＜０．９５である場合において、ＳＶ波比帯域が０．０３％以下となる範囲、すなわちストンリー波によるスプリアスを抑圧し得る範囲は、下記の（ａ１）～（ａ２７）のいずれかの組み合わせであることがわかる。 Therefore, the results shown in FIGS. 55 to 81 are summarized as follows. When 0.55 <h3 / (h1 + h3) <0.95, the range where the SV wave ratio band is 0.03% or less, that is, spurious due to the Stoneley wave. It can be seen that the range in which can be suppressed is any combination of the following (a1) to (a27).
　（ａ１）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～27°
　（ａ２）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～30.5°
　（ａ３）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～30°
　（ａ４）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～27.5°
　（ａ５）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～30°
　（ａ６）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ａ７）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～27.5°
　（ａ８）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～30°
　（ａ９）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29°
　（ａ１０）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23°～28.5°
　（ａ１１）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～31°
　（ａ１２）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ａ１３）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23°～29°
　（ａ１４）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～31°
　（ａ１５）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～29°
　（ａ１６）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23°～29.5°
　（ａ１７）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30.5°
　（ａ１８）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～28.5°
　（ａ１９）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30°
　（ａ２０）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31.5°
　（ａ２１）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～30°
　（ａ２２）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30.5°
　（ａ２３）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ａ２４）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～29°
　（ａ２５）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～30.5°
　（ａ２６）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～30.5°
　（ａ２７）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.525～0.55、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～28° (A1) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.07λ to 0.09λ, and SiO 2 film thickness is 0.375λ to At 0.425λ, the cut angle of LiNbO 3 is 21.5 ° to 27 °
(A2) Pt film thickness is 0.0225λ to 0.0275λ, upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.07λ to 0.09λ, SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23 ° ~ 30.5 °
(A3) Total Pt film thickness is 0.0275λ to 0.0325λ, Upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.07λ to 0.09λ, SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(A4) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.09λ to 0.11λ, and SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 21.5 ° to 27.5 °
(A5) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23 ° -30 °
(A6) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to At 0.425λ, the cut angle of LiNbO 3 is 23.5 ° to 29.5 °
(A7) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.11λ to 0.13λ, SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 21.5 ° to 27.5 °
(A8) Pt film thickness is 0.0225λ to 0.0275λ, upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.11λ to 0.13λ, SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23 ° -30 °
(A9) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23.5 ° to 29 °
(A10) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.07λ to 0.09λ, and SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23 ° ~ 28.5 °
(A11) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24 ° to 31 °
(A12) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(A13) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.09λ to 0.11λ, and SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23 ° to 29 °
(A14) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° to 31 °
(A15) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° to 29 °
(A16) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23 ° ~ 29.5 °
(A17) Pt film thickness is 0.0225λ to 0.0275λ, upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.11λ to 0.13λ, SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° to 30.5 °
(A18) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° to 28.5 °
(A19) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.07λ to 0.09λ, and SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° -30 °
(A20) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 31.5 °
(A21) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 23 ° -30 °
(A22) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.09λ to 0.11λ, and SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 30.5 °
(A23) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 31 °
(A24) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 23.5 ° to 29 °
(A25) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.525 to 0.55, Al film thickness is 0.11λ to 0.13λ, SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 23.5 ° to 30.5 °
(A26) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 23.5 ° to 30.5 °
(A27) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.525 to 0.55, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 23 ° to 28 °
　（第２のグループ）
　図８２～図１０８は、ＬｉＮｂＯ３のカット角２５°、Ｐｔ膜厚合計２．７２％（対波長比）、上Ｐｔ膜厚／Ｐｔ膜厚合計０．７８、Ａｌ膜の膜厚７．９％（対波長比）、及びＳｉＯ２膜の膜厚４５．６％（対波長比）を中心とする、上記各パラメータとＳＶ波比帯域との関係を示す図である。 (Second group)
82 to 108 show a cut angle of LiNbO 3 of 25 °, a total Pt film thickness of 2.72% (ratio to wavelength), an upper Pt film thickness / total Pt film thickness of 0.78, and an Al film thickness of 7.9. % (versus wavelength ratio), and the center 45.6% the thickness of the SiO 2 film (versus wavelength ratio) is a diagram showing the relationship between the parameters and SV wave ratio band.
　より具体的には、図８２～図９０は、ＳｉＯ２膜の膜厚が０．４０λの場合の結果を示す。ここで、図８２～図８４では、上Ｐｔ膜厚／Ｐｔ膜厚合計が０．７５、図８５～図８７では０．８０、図８８～図９０では０．８５の場合の結果が示されている。そして、図８２～図８４では、Ａｌ膜の膜厚が、０．０６λ、０．０８λまたは０．１０λとされており、図８５～図８７においても、Ａｌ膜の膜厚が０．０６λ、０．０８λまたは０．１０λとされており、図８８～図９０においても、Ａｌ膜の膜厚が０．０６λ、０．０８λまたは０．１０λとされている。 More specifically, FIGS. 82 to 90 show results when the thickness of the SiO 2 film is 0.40λ. Here, FIGS. 82 to 84 show the results when the upper Pt film thickness / Pt film thickness is 0.75, FIGS. 85 to 87 are 0.80, and FIGS. 88 to 90 are 0.85. ing. 82 to 84, the film thickness of the Al film is 0.06λ, 0.08λ, or 0.10λ. In FIGS. 85 to 87, the film thickness of the Al film is 0.06λ, The thickness of the Al film is 0.06λ, 0.08λ, or 0.10λ in FIGS. 88 to 90.
　そして、図８２～図９０においては、さらに、Ｐｔ膜厚合計を０．０２λ、０．０２５λまたは０．０３λに変化させた場合のＬｉＮｂＯ３のカット角と、ＳＶ波比帯域との関係が示されている。 82 to 90 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed to 0.02λ, 0.025λ, or 0.03λ. Has been.
　図８２～図９０から明らかなように、ＬｉＮｂＯ３のカット角が２５°近辺の場合、ＳＶ波比帯域が非常に小さくなり、極小値となることがわかる。カット角が２５°から遠ざかるにつれ、いずれの場合においても、ＳＶ波比帯域が大きくなっていくことがわかる。 As is apparent from FIGS. 82 to 90, when the cut angle of LiNbO 3 is around 25 °, the SV wave ratio band becomes very small and becomes a minimum value. It can be seen that the SV wave ratio band increases in any case as the cut angle moves away from 25 °.
　図９１～図９９は、ＳｉＯ２膜の膜厚が０．４５λの場合の結果を示す。ここで、図９１～図９３では、上Ｐｔ膜厚／Ｐｔ膜厚合計が０．７５、図９４～図９６では０．８０、図９７～図９９では０．８５の場合の結果が示されている。そして、図９１～図９３では、Ａｌ膜の膜厚が、０．０６λ、０．０８λまたは０．１０λとされており、図９４～図９６においても、Ａｌ膜の膜厚が０．０６λ、０．０８λまたは０．１０λとされており、図９７～図９９においても、Ａｌ膜の膜厚が０．０６λ、０．０８λまたは０．１０λとされている。 91 to 99 show results when the thickness of the SiO 2 film is 0.45λ. Here, FIGS. 91 to 93 show the results when the upper Pt film thickness / Pt film thickness is 0.75, FIGS. 94 to 96 are 0.80, and FIGS. 97 to 99 are 0.85. ing. 91 to 93, the thickness of the Al film is 0.06λ, 0.08λ, or 0.10λ. In FIGS. 94 to 96, the thickness of the Al film is 0.06λ, The thickness of the Al film is 0.06λ, 0.08λ, or 0.10λ in FIGS. 97 to 99.
　そして、図９１～図９９においては、さらに、Ｐｔ膜厚合計を変化させた場合のＬｉＮｂＯ３のカット角と、ＳＶ波比帯域との関係が示されている。 91 to 99 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed.
　図９１～図９９から明らかなように、ＬｉＮｂＯ３のカット角が２５°近辺の場合、ＳＶ波比帯域が非常に小さくなり、極小値となることがわかる。カット角が２５°から遠ざかるにつれ、いずれの場合においても、ＳＶ波比帯域が大きくなっていくことがわかる。 As is apparent from FIGS. 91 to 99, when the cut angle of LiNbO 3 is around 25 °, the SV wave ratio band becomes very small and becomes a minimum value. It can be seen that the SV wave ratio band increases in any case as the cut angle moves away from 25 °.
　図１００～図１０８は、ＳｉＯ２膜の膜厚が０．５０λの場合の結果を示す。ここで、図１００～図１０２では、上Ｐｔ膜厚／Ｐｔ膜厚合計が０．７５、図１０３～図１０５では０．８０、図１０６～図１０８では０．８５の場合の結果が示されている。そして、図１００～図１０２では、Ａｌ膜の膜厚が、０．０６λ、０．０８λまたは０．１０λとされており、図１０３～図１０５においても、Ａｌ膜の膜厚が０．０６λ、０．０８λまたは０．１０λとされており、図１０６～図１０８においても、Ａｌ膜の膜厚が０．０６λ、０．０８λまたは０．１０λとされている。 100 to 108 show the results when the thickness of the SiO 2 film is 0.50λ. Here, FIGS. 100 to 102 show the results when the upper Pt film thickness / Pt film thickness is 0.75, FIGS. 103 to 105 are 0.80, and FIGS. 106 to 108 are 0.85. ing. 100 to 102, the thickness of the Al film is 0.06λ, 0.08λ, or 0.10λ. In FIGS. 103 to 105, the thickness of the Al film is 0.06λ, The thickness of the Al film is 0.06λ, 0.08λ, or 0.10λ in FIGS. 106 to 108 as well.
　そして、図１００～図１０８においては、さらに、Ｐｔ膜厚合計を変化させた場合のＬｉＮｂＯ３のカット角と、ＳＶ波比帯域との関係が示されている。 100 to 108 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed.
　図１００～図１０８から明らかなように、ＬｉＮｂＯ３のカット角が２５°近辺の場合、ＳＶ波比帯域が非常に小さくなり、極小値となることがわかる。カット角が２５°から遠ざかるにつれ、いずれの場合においても、ＳＶ波比帯域が大きくなっていくことがわかる。 As is apparent from FIGS. 100 to 108, when the cut angle of LiNbO 3 is around 25 °, the SV wave ratio band becomes very small and becomes a minimum value. It can be seen that the SV wave ratio band increases in any case as the cut angle moves away from 25 °.
　従って、図８２～図１０８の結果をまとめると、０．５５＜ｈ３／（ｈ１＋ｈ３）＜０．９５である場合において、ＳＶ波比帯域が０．０３％以下となる範囲、すなわちストンリー波によるスプリアスを抑圧し得る範囲は、下記の（ｃ１）～（ｃ８１）のいずれかの組み合わせであることがわかる。 Therefore, the results of FIGS. 82 to 108 are summarized as follows. When 0.55 <h3 / (h1 + h3) <0.95, the range in which the SV wave ratio band is 0.03% or less, that is, spurious due to the Stoneley wave. It can be seen that the range in which can be suppressed is a combination of any of the following (c1) to (c81).
　（ｃ１）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、22°～28.5°
　（ｃ２）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ３）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～28°
　（ｃ４）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～29°
　（ｃ５）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29.5°
　（ｃ６）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～26.5°
　（ｃ７）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29°
　（ｃ８）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～29°
　（ｃ９）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～26.5°
　（ｃ１０）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～28.5°
　（ｃ１１）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ１２）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～27°
　（ｃ１３）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29°
　（ｃ１４）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29°
　（ｃ１５）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～26°
　（ｃ１６）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
　（ｃ１７）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28.5°
　（ｃ１８）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、22°～26.5°
　（ｃ１９）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29°
　（ｃ２０）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29.5°
　（ｃ２１）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～26.5°
　（ｃ２２）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
　（ｃ２３）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28.5°
　（ｃ２４）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～26°
　（ｃ２５）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｃ２６）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～27°
　（ｃ２７）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、21°～27°
　（ｃ２８）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ２９）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～30.5°
　（ｃ３０）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～28°
　（ｃ３１）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ３２）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～29.5°
　（ｃ３３）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～25.5°
　（ｃ３４）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ３５）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～28.5°
　（ｃ３６）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、22°～26°
　（ｃ３７）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ３８）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ３９）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～27°
　（ｃ４０）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ４１）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～29°
　（ｃ４２）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、22.5°～25.5°
　（ｃ４３）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～30°
　（ｃ４４）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、25°～27°
　（ｃ４５）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、20.5°～26°
　（ｃ４６）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ４７）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～29.5°
　（ｃ４８）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～25.5°
　（ｃ４９）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
　（ｃ５０）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24.5°～28°
　（ｃ５１）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、21°～25.5°
　（ｃ５２）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～30°
　（ｃ５３）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～26.5°
　（ｃ５４）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.425λ～0.475λのとき、LiNbO3のカット角が、19.5°～25.5°
　（ｃ５５）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ｃ５６）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ｃ５７）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～27.5°
　（ｃ５８）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～3°
　（ｃ５９）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～29°
　（ｃ６０）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～26.5°
　（ｃ６１）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30.5°
　（ｃ６２）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～27.5°
　（ｃ６３）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.725～0.775、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、20.5°～25°
　（ｃ６４）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ｃ６５）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30°
　（ｃ６６）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～26.5°
　（ｃ６７）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ｃ６８）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～28.5°
　（ｃ６９）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、21.5°～25°
　（ｃ７０）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30°
　（ｃ７１）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、22°～26°
　（ｃ７２）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、19°～25°
　（ｃ７３）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
　（ｃ７４）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～29.5°
　（ｃ７５）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.05λ～0.07λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～26°
　（ｃ７６）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30.5°
　（ｃ７７）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～27°
　（ｃ７８）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、20°～25°
　（ｃ７９）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、24.5°～30°
　（ｃ８０）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～26°
　（ｃ８１）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.475λ～0.525λのとき、LiNbO3のカット角が、18°～24.5° (C1) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.725 to 0.775, Al film thickness is 0.05λ to 0.07λ, SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 22 ° ~ 28.5 °
(C2) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(C3) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23.5 ° -28 °
(C4) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 22.5 ° to 29 °
(C5) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to At 0.425λ, the cut angle of LiNbO 3 is 24 ° to 29.5 °
(C6) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to At 0.425λ, the cut angle of LiNbO 3 is 24.5 ° to 26.5 °
(C7) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23 ° to 29 °
(C8) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 24.5 ° to 29 °
(C9) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23.5 ° to 26.5 °
(C10) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 22.5 ° to 28.5 °
(C11) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(C12) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23.5 ° -27 °
(C13) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23 ° to 29 °
(C14) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 24 ° to 29 °
(C15) Pt film thickness is 0.0275λ to 0.0325λ, upper Pt film thickness / Pt film thickness is 0.775 to 0.825, Al film thickness is 0.07λ to 0.09λ, and SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23.5 ° -26 °
(C16) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23 ° ~ 29.5 °
(C17) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 25 ° to 28.5 °
(C18) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 22 ° ~ 26.5 °
(C19) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23 ° to 29 °
(C20) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.375λ to At 0.425λ, the cut angle of LiNbO 3 is 24 ° to 29.5 °
(C21) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 24 ° to 26.5 °
(C22) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23 ° ~ 29.5 °
(C23) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 24.5 ° to 28.5 °
(C24) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 22.5 ° -26 °
(C25) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to At 0.425λ, the cut angle of LiNbO 3 is 23.5 ° to 29.5 °
(C26) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 24.5 ° -27 °
(C27) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 21 ° to 27 °
(C28) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(C29) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24 ° to 30.5 °
(C30) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° -28 °
(C31) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(C32) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24 ° to 29.5 °
(C33) Pt film thickness is 0.0275λ to 0.0325λ, upper Pt film thickness / Pt film thickness is 0.725 to 0.775, Al film thickness is 0.07λ to 0.09λ, and SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24 ° to 25.5 °
(C34) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.725 to 0.775, Al film thickness is 0.09λ to 0.11λ, and SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(C35) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24 ° to 28.5 °
(C36) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 22 ° -26 °
(C37) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.775 to 0.825, Al film thickness is 0.05λ to 0.07λ, and SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(C38) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(C39) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° -27 °
(C40) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(C41) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24 ° to 29 °
(C42) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 22.5 ° to 25.5 °
(C43) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24 ° -30 °
(C44) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 25 ° to 27 °
(C45) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 20.5 ° -26 °
(C46) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.825 to 0.875, Al film thickness is 0.05λ to 0.07λ, SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(C47) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24 ° to 29.5 °
(C48) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24 ° to 25.5 °
(C49) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 23.5 ° -30 °
(C50) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24.5 ° -28 °
(C51) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 21 ° -25.5 °
(C52) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.825 to 0.875, Al film thickness is 0.09λ to 0.11λ, and SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24 ° -30 °
(C53) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 24 ° to 26.5 °
(C54) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.425λ to When 0.475λ, the cut angle of LiNbO 3 is 19.5 ° -25.5 °
(C55) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 31 °
(C56) Pt film thickness is 0.0225λ to 0.0275λ, upper Pt film thickness / Pt film thickness is 0.725 to 0.775, Al film thickness is 0.05λ to 0.07λ, SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 31 °
(C57) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 23 ° to 27.5 °
(C58) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.725 to 0.775, Al film thickness is 0.07λ to 0.09λ, and SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 3 °
(C59) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 29 °
(C60) Total Pt film thickness is 0.0275λ to 0.0325λ, Upper Pt film thickness / Pt film thickness is 0.725 to 0.775, Al film thickness is 0.07λ to 0.09λ, SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 23 ° to 26.5 °
(C61) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 30.5 °
(C62) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 27.5 °
(C63) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.725 to 0.775, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.475λ to When 0.525λ, the cut angle of LiNbO 3 is 20.5 ° -25 °
(C64) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.775 to 0.825, Al film thickness is 0.05λ to 0.07λ, SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 31 °
(C65) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° -30 °
(C66) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 23 ° to 26.5 °
(C67) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 31 °
(C68) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 28.5 °
(C69) Pt film thickness is 0.0275λ to 0.0325λ, upper Pt film thickness / Pt film thickness is 0.775 to 0.825, Al film thickness is 0.07λ to 0.09λ, SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 21.5 ° to 25 °
(C70) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.775 to 0.825, Al film thickness is 0.09λ to 0.11λ, and SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° -30 °
(C71) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 22 ° to 26 °
(C72) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 19 ° to 25 °
(C73) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 31 °
(C74) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 29.5 °
(C75) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.05λ to 0.07λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 23.5 ° -26 °
(C76) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 30.5 °
(C77) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24 ° to 27 °
(C78) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 20 ° to 25 °
(C79) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 24.5 ° -30 °
(C80) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 23 ° to 26 °
(C81) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.475λ to At 0.525λ, the cut angle of LiNbO 3 is 18 ° to 24.5 °
　（第３のグループ）
　図１０９～図１３５は、ＬｉＮｂＯ３のカット角２５°、Ｐｔ膜厚合計２．５３％（対波長比）、上Ｐｔ膜厚／Ｐｔ膜厚合計０．８６、Ａｌ膜の膜厚９．０％（対波長比）、及びＳｉＯ２膜の膜厚３６．３％（対波長比）を中心とする、上記各パラメータとＳＶ波比帯域との関係を示す図である。 (Third group)
109 to 135 show a cut angle of LiNbO 3 of 25 °, a total Pt film thickness of 2.53% (vs. wavelength ratio), an upper Pt film thickness / total Pt film thickness of 0.86, and an Al film thickness of 9.0. % (versus wavelength ratio), and the center 36.3% the thickness of the SiO 2 film (versus wavelength ratio) is a diagram showing the relationship between the parameters and SV wave ratio band.
　より具体的には、図１０９～図１１７は、ＳｉＯ２膜の膜厚が０．３０λの場合の結果を示す。ここで、図１０９～図１１１では、上Ｐｔ膜厚／Ｐｔ膜厚合計が０．８０、図１１２～図１１４では０．８５、図１１５～図１１７では０．９０の場合の結果が示されている。そして、図１０９～図１１１では、Ａｌ膜の膜厚が、０．０８λ、０．１０λまたは０．１２λとされており、図１１２～図１１４においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされており、図１１５～図１１７においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされている。 More specifically, FIGS. 109 to 117 show results when the thickness of the SiO 2 film is 0.30λ. Here, FIGS. 109 to 111 show the results when the upper Pt film thickness / Pt film thickness is 0.80, FIGS. 112 to 114 are 0.85, and FIGS. 115 to 117 are 0.90. ing. 109 to 111, the thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ. Also in FIGS. 112 to 114, the thickness of the Al film is 0.08λ, The thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ in FIGS. 115 to 117 as well.
　そして、図１０９～図１１７においては、さらに、Ｐｔ膜厚合計を０．０２λ、０．０２５λまたは０．０３λに変化させた場合のＬｉＮｂＯ３のカット角と、ＳＶ波比帯域との関係が示されている。 109 to 117 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed to 0.02λ, 0.025λ, or 0.03λ. Has been.
　図１０９～図１１７から明らかなように、ＬｉＮｂＯ３のカット角が２５°近辺の場合、ＳＶ波比帯域が非常に小さくなり、極小値となることがわかる。カット角が２５°から遠ざかるにつれ、いずれの場合においても、ＳＶ波比帯域が大きくなっていくことがわかる。 As is apparent from FIGS. 109 to 117, when the cut angle of LiNbO 3 is around 25 °, the SV wave ratio band becomes very small and becomes a minimum value. It can be seen that the SV wave ratio band increases in any case as the cut angle moves away from 25 °.
　図１１８～図１２６は、ＳｉＯ２膜の膜厚は０．３５λの場合の結果を示す。ここで、図１１８～図１２０では、上Ｐｔ膜厚／Ｐｔ膜厚合計が０．８０、図１２１～図１２３では０．８５、図１２４～図１２６では０．９０の場合の結果が示されている。そして、図１１８～図１２０では、Ａｌ膜の膜厚が、０．０８λ、０．１０λまたは０．１２λとされており、図１２１～図１２３においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされており、図１２４～図１２６においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされている。 Figure 118 through Figure 126, the thickness of the SiO 2 film shows the results when the 0.35Ramuda. Here, FIGS. 118 to 120 show the results when the upper Pt film thickness / Pt film thickness is 0.80, FIGS. 121 to 123 are 0.85, and FIGS. 124 to 126 are 0.90. ing. 118 to 120, the thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ. In FIGS. 121 to 123, the thickness of the Al film is 0.08λ, The thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ in FIGS. 124 to 126 as well.
　そして、図１１８～図１２６においては、さらに、Ｐｔ膜厚合計を変化させた場合のＬｉＮｂＯ３のカット角と、ＳＶ波比帯域との関係が示されている。 118 to 126 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed.
　図１１８～図１２６から明らかなように、ＬｉＮｂＯ３のカット角が２５°近辺の場合、ＳＶ波比帯域が非常に小さくなり、極小値となることがわかる。カット角が２５°から遠ざかるにつれ、いずれの場合においても、ＳＶ波比帯域が大きくなっていくことがわかる。 As is apparent from FIGS. 118 to 126, it can be seen that when the cut angle of LiNbO 3 is around 25 °, the SV wave ratio band becomes very small and becomes a minimum value. It can be seen that the SV wave ratio band increases in any case as the cut angle moves away from 25 °.
　図１２７～図１３５は、ＳｉＯ２膜の膜厚が０．４０λの場合の結果を示す。ここで、図１２７～図１２９では、上Ｐｔ膜厚／Ｐｔ膜厚合計が０．８０、図１３０～図１３２では０．８５、図１３３～図１３５では０．９０の場合の結果が示されている。そして、図１２７～図１２９では、Ａｌ膜の膜厚が、０．０８λ、０．１０λまたは０．１２λとされており、図１３０～図１３２においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされており、図１３３～図１３５においても、Ａｌ膜の膜厚が０．０８λ、０．１０λまたは０．１２λとされている。 127 to 135 show the results when the thickness of the SiO 2 film is 0.40λ. 127 to 129 show the results when the upper Pt film thickness / Pt film thickness is 0.80, FIGS. 130 to 132 are 0.85, and FIGS. 133 to 135 are 0.90. ing. 127 to 129, the film thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ. In FIGS. 130 to 132, the film thickness of the Al film is 0.08λ, The thickness of the Al film is 0.08λ, 0.10λ, or 0.12λ in FIGS. 133 to 135 as well.
　そして、図１２７～図１３５においては、さらに、Ｐｔ膜厚合計を変化させた場合のＬｉＮｂＯ３のカット角と、ＳＶ波比帯域との関係が示されている。 127 to 135 further show the relationship between the cut angle of LiNbO 3 and the SV wave ratio band when the total Pt film thickness is changed.
　図１２７～図１３５から明らかなように、ＬｉＮｂＯ３のカット角が２５°近辺の場合、ＳＶ波比帯域が非常に小さくなり、極小値となることがわかる。カット角が２５°から遠ざかるにつれ、いずれの場合においても、ＳＶ波比帯域が大きくなっていくことがわかる。 As is apparent from FIGS. 127 to 135, when the cut angle of LiNbO 3 is around 25 °, the SV wave ratio band becomes very small and becomes a minimum value. It can be seen that the SV wave ratio band increases in any case as the cut angle moves away from 25 °.
　従って、図１０９～図１３５の結果をまとめると、０．５５＜ｈ３／（ｈ１＋ｈ３）＜０．９５である場合において、ＳＶ波比帯域が０．０３％以下となる範囲、すなわちストンリー波によるスプリアスを抑圧し得る範囲は、下記の（ｄ１）～（ｄ８１）のいずれかの組み合わせであることがわかる。 Therefore, the results shown in FIGS. 109 to 135 are summarized as follows. When 0.55 <h3 / (h1 + h3) <0.95, the range in which the SV wave ratio band is 0.03% or less, that is, spurious due to the Stoneley wave. It can be seen that the range in which can be suppressed is a combination of any of the following (d1) to (d81).
　（ｄ１）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、19.5°～25°
　（ｄ２）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ３）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～28.5°
　（ｄ４）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、19°～25°
　（ｄ５）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ６）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～28°
　（ｄ７）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、18.5°～24°
　（ｄ８）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ９）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、27°～29°
　（ｄ１０）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、20°～26°
　（ｄ１１）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、24°～29.5°
　（ｄ１２）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～27.5°
　（ｄ１３）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、20°～26°
　（ｄ１４）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、24.5°～30°
　（ｄ１５）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、26°～29.5°
　（ｄ１６）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、19.5°～25.5°
　（ｄ１７）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～30°
　（ｄ１８）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、26°～31°
　（ｄ１９）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、20.5°～21.5°
　（ｄ２０）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～30°
　（ｄ２１）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～29°
　（ｄ２２）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、21°～27°
　（ｄ２３）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、26°～30°
　（ｄ２４）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～30.5°
　（ｄ２５）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、21°～26.5°
　（ｄ２６）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、26.5°～30°
　（ｄ２７）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～32°
　（ｄ２８）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、21.5°～28°
　（ｄ２９）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～29.5°
　（ｄ３０）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、25.5°～26.5°
　（ｄ３１）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、21.5°～28°
　（ｄ３２）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、24.5°～29.5°
　（ｄ３３）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～28°
　（ｄ３４）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～28°
　（ｄ３５）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、25.5°～29°
　（ｄ３６）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、23.5°～28.5°
　（ｄ３７）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～28.5°
　（ｄ３８）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、24.5°～29.5°
　（ｄ３９）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～27°
　（ｄ４０）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、22.5°～28.5°
　（ｄ４１）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～29°
　（ｄ４２）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～28.5°
　（ｄ４３）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～29°
　（ｄ４４）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～28°
　（ｄ４５）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～29.5°
　（ｄ４６）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、22.5°～29°
　（ｄ４７）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～29°
　（ｄ４８）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～28°
　（ｄ４９）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、23.5°～29°
　（ｄ５０）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～28°
　（ｄ５１）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～28.5°
　（ｄ５２）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～29.5°
　（ｄ５３）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、26°～30°
　（ｄ５４）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～30°
　（ｄ５５）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～29°
　（ｄ５６）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29°
　（ｄ５７）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～26°
　（ｄ５８）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
　（ｄ５９）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28.5°
　（ｄ６０）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、22°～27°
　（ｄ６１）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ６２）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28°
　（ｄ６３）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.775～0.825、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、21°～27.5°
　（ｄ６４）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
　（ｄ６５）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28.5°
　（ｄ６６）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～26.5°
　（ｄ６７）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ６８）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28.5°
　（ｄ６９）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、21°～27°
　（ｄ７０）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～30°
　（ｄ７１）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～28°
　（ｄ７２）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.825～0.875、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、20°～27.5°
　（ｄ７３）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
　（ｄ７４）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28°
　（ｄ７５）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.07λ～0.09λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～26.5°
　（ｄ７６）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29.5°
　（ｄ７７）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28°
　（ｄ７８）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.09λ～0.11λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、20°～27°
　（ｄ７９）Pt膜厚合計が、0.0175λ～0.0225λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～29.5°
　（ｄ８０）Pt膜厚合計が、0.0225λ～0.0275λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29°
　（ｄ８１）Pt膜厚合計が、0.0275λ～0.0325λ、上Pt膜厚/Pt膜厚合計が、0.875～0.925、Al膜厚が、0.11λ～0.13λ、SiO2膜厚が、0.375λ～0.425λのとき、LiNbO3のカット角が、19°～27.5° (D1) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.775 to 0.825, Al film thickness is 0.07λ to 0.09λ, SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 19.5 ° -25 °
(D2) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 23.5 ° to 29.5 °
(D3) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 25.5 ° to 28.5 °
(D4) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 19 ° to 25 °
(D5) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 23.5 ° to 29.5 °
(D6) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 25.5 ° -28 °
(D7) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 18.5 ° -24 °
(D8) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 23.5 ° to 29.5 °
(D9) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 27 ° to 29 °
(D10) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 20 ° to 26 °
(D11) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 24 ° to 29.5 °
(D12) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 25 ° to 27.5 °
(D13) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 20 ° to 26 °
(D14) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 24.5 ° -30 °
(D15) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 26 ° to 29.5 °
(D16) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 19.5 ° -25.5 °
(D17) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 25 ° -30 °
(D18) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 26 ° to 31 °
(D19) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 20.5 ° to 21.5 °
(D20) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 25 ° -30 °
(D21) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 25.5 ° to 29 °
(D22) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 21 ° to 27 °
(D23) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 26 ° -30 °
(D24) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 25 ° to 30.5 °
(D25) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.875 to 0.925, Al film thickness is 0.11λ to 0.13λ, SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 21 ° to 26.5 °
(D26) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 26.5 ° -30 °
(D27) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.275λ to When 0.325λ, the cut angle of LiNbO 3 is 25.5 ° to 32 °
(D28) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 21.5 ° -28 °
(D29) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 24 ° to 29.5 °
(D30) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 25.5 ° to 26.5 °
(D31) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.775 to 0.825, Al film thickness is 0.09λ to 0.11λ, and SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 21.5 ° -28 °
(D32) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 24.5 ° to 29.5 °
(D33) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 24 ° to 28 °
(D34) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 22 ° -28 °
(D35) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 25.5 ° to 29 °
(D36) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 23.5 ° to 28.5 °
(D37) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 22 ° ~ 28.5 °
(D38) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 24.5 ° to 29.5 °
(D39) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 24 ° to 27 °
(D40) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 22.5 ° to 28.5 °
(D41) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 25 ° to 29 °
(D42) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 23 ° ~ 28.5 °
(D43) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 23 ° to 29 °
(D44) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 25 ° to 28 °
(D45) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 23 ° ~ 29.5 °
(D46) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 22.5 ° to 29 °
(D47) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 25 ° to 29 °
(D48) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 23 ° to 28 °
(D49) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 23.5 ° to 29 °
(D50) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 25 ° to 28 °
(D51) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 22 ° ~ 28.5 °
(D52) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 24 ° to 29.5 °
(D53) Pt film thickness is 0.0225λ to 0.0275λ, upper Pt film thickness / Pt film thickness is 0.875 to 0.925, Al film thickness is 0.11λ to 0.13λ, SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 26 ° -30 °
(D54) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.325λ to When 0.375λ, the cut angle of LiNbO 3 is 22 ° -30 °
(D55) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 22.5 ° to 29 °
(D56) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 24 ° to 29 °
(D57) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23.5 ° -26 °
(D58) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.775 to 0.825, Al film thickness is 0.09λ to 0.11λ, and SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23 ° ~ 29.5 °
(D59) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 25 ° to 28.5 °
(D60) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 22 ° -27 °
(D61) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.375λ to At 0.425λ, the cut angle of LiNbO 3 is 23.5 ° to 29.5 °
(D62) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 25 ° to 28 °
(D63) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.775 to 0.825, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 21 ° ~ 27.5 °
(D64) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23 ° ~ 29.5 °
(D65) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 24.5 ° to 28.5 °
(D66) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 22.5 ° to 26.5 °
(D67) Pt film thickness is 0.0175λ to 0.0225λ, upper Pt film thickness / Pt film thickness is 0.825 to 0.875, Al film thickness is 0.09λ to 0.11λ, and SiO 2 film thickness is 0.375λ to At 0.425λ, the cut angle of LiNbO 3 is 23.5 ° to 29.5 °
(D68) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 24.5 ° to 28.5 °
(D69) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 21 ° to 27 °
(D70) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 24 ° -30 °
(D71) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.375λ to At 0.425λ, the cut angle of LiNbO 3 is 24 ° to 28 °
(D72) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.825 to 0.875, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 20 ° to 27.5 °
(D73) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to At 0.425λ, the cut angle of LiNbO 3 is 23.5 ° to 29.5 °
(D74) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 25 ° to 28 °
(D75) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.07λ to 0.09λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 21.5 ° to 26.5 °
(D76) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to At 0.425λ, the cut angle of LiNbO 3 is 24 ° to 29.5 °
(D77) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 24.5 ° to 28 °
(D78) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.09λ to 0.11λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 20 ° to 27 °
(D79) The total Pt film thickness is 0.0175λ to 0.0225λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 25 ° to 29.5 °
(D80) The total Pt film thickness is 0.0225λ to 0.0275λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 23.5 ° to 29 °
(D81) The total Pt film thickness is 0.0275λ to 0.0325λ, the upper Pt film thickness / Pt film thickness is 0.875 to 0.925, the Al film thickness is 0.11λ to 0.13λ, and the SiO 2 film thickness is 0.375λ to When 0.425λ, the cut angle of LiNbO 3 is 19 ° ~ 27.5 °
　（第７の実施形態）
　第７の実施形態は、第２の実施形態と同様に、第１～第３の電極層２１～２３の上に第４の電極層２４が形成されている点で、上記第６の実施形態と異なる。 (Seventh embodiment)
As in the second embodiment, the seventh embodiment is similar to the sixth embodiment in that a fourth electrode layer 24 is formed on the first to third electrode layers 21 to 23. And different.
　図１３６は、第７の実施形態において、第４の電極層２４であるＡｌ膜の膜厚を変化させた場合の周波数温度係数ＴＣＦの変化を示す図である。ＳｉＯ２は正の周波数温度係数ＴＣＦを有する。ＬｉＮｂＯ３は負の周波数温度係数を有する。ＬｉＮｂＯ３基板にＳｉＯ２を積層した弾性境界波装置の周波数温度係数ＴＣＦは、ＳｉＯ２膜とＬｉＮｂＯ３基板の中間の負の値を示している。図１３６から明らかなように、第４の電極層２４であるＡｌ膜の膜厚を大きくしていくと、周波数温度係数ＴＣＦの絶対値が大きくなる傾向がわかる。ＳｉＯ２などの一部がＡｌに置き換わることにより、周波数温度係数ＴＣＦの絶対値は大きくなっている。なお、図１３６の結果は、カット角２４°回転ＹカットのＬｉＮｂＯ３基板上に、Ｐｔ膜厚合計０．０３λ、上Ｐｔ膜のＰｔ膜厚合計に対する比＝１、Ａｌ膜の膜厚＝０．１０λ、ＳｉＯ２膜の膜厚＝０．５０λ、ＳｉＮ膜の膜厚＝１．７λとした場合の結果を示す。 FIG. 136 is a diagram showing a change in the frequency temperature coefficient TCF when the thickness of the Al film that is the fourth electrode layer 24 is changed in the seventh embodiment. SiO 2 has a positive frequency temperature coefficient TCF. LiNbO 3 has a negative frequency temperature coefficient. LiNbO 3 frequency temperature coefficient TCF of the boundary acoustic wave device formed by laminating a SiO 2 substrate indicates the negative value of the intermediate of SiO 2 film and the LiNbO 3 substrate. As is apparent from FIG. 136, it can be seen that the absolute value of the frequency temperature coefficient TCF tends to increase as the thickness of the Al film as the fourth electrode layer 24 increases. When a part of SiO 2 or the like is replaced with Al, the absolute value of the frequency temperature coefficient TCF is increased. 136 shows that the Pt film thickness is 0.03λ, the ratio of the upper Pt film to the total Pt film thickness = 1, and the film thickness of the Al film = 0 on the LiNbO 3 substrate with a cut angle of 24 ° and a Y cut. shown .10λ, SiO 2 film having a thickness = 0.50λ, results in the case of a film thickness = 1.7Ramuda of the SiN film.
　図１３６に示すように、第４の電極層２４であるＡｌ膜の厚みを厚くしていくと、周波数温度係数ＴＣＦが若干劣化することがわかる。例えば、第４の電極層２４であるＡｌ膜の膜厚が０．１λの場合、周波数温度係数ＴＣＦが第４の電極層２４であるＡｌ膜を形成しなかった場合に比べて約２ｐｐｍ／℃劣化していることがわかる。もっとも、表現を代えると、第４の電極層２４であるＡｌ膜の膜厚が０．１λ以下であれば、周波数温度係数ＴＣＦの劣化は２ｐｐｍ／℃以内とすることができる。従って、周波数温度係数ＴＣＦをさほど劣化させることなく、電気機械結合係数などの他の特性を高め、さらにストンリー波スプリアスを効果的に抑圧し得ることがわかる。よって、より好ましくは、第４の電極層２４であるＡｌ膜の膜厚は、０．１λ以下とすることが望ましい。 As shown in FIG. 136, it can be seen that the frequency temperature coefficient TCF slightly deteriorates as the thickness of the Al film as the fourth electrode layer 24 is increased. For example, when the film thickness of the Al film as the fourth electrode layer 24 is 0.1λ, the frequency temperature coefficient TCF is about 2 ppm / ° C. compared to the case where the Al film as the fourth electrode layer 24 is not formed. It turns out that it has deteriorated. However, in other words, if the thickness of the Al film as the fourth electrode layer 24 is 0.1λ or less, the deterioration of the frequency temperature coefficient TCF can be within 2 ppm / ° C. Therefore, it can be seen that other characteristics such as the electromechanical coupling coefficient can be enhanced and Stoneley wave spurious can be effectively suppressed without significantly degrading the frequency temperature coefficient TCF. Therefore, more preferably, the thickness of the Al film that is the fourth electrode layer 24 is set to 0.1λ or less.
　また、第６の実施形態において、ＩＤＴ電極２０と、第１の媒質１１との間に、例えば、Ｔａ２Ｏ５などの酸化タンタルからなる誘電体層１４が形成されていてもよい。 In the sixth embodiment, a dielectric layer 14 made of tantalum oxide such as Ta 2 O 5 may be formed between the IDT electrode 20 and the first medium 11.
　誘電体層１４の厚みは、耐サージ性を高める上では、ある程度厚い方が望ましいが、誘電体層１４の厚みが厚すぎると、電気機械結合係数が低下するおそれがある。従って、誘電体層１４の厚みは、０．０３λ以下程度とすることが好ましい。また、誘電体層１４の誘電率が大きいほど電気機械結合係数の低下は抑えられる。従って、誘電体層１４としては、誘電率の高い材料が望ましい。 The thickness of the dielectric layer 14 is desirably thick to some extent in order to improve surge resistance, but if the thickness of the dielectric layer 14 is too thick, the electromechanical coupling coefficient may be reduced. Therefore, the thickness of the dielectric layer 14 is preferably about 0.03λ or less. In addition, a decrease in the electromechanical coupling coefficient is suppressed as the dielectric constant of the dielectric layer 14 is increased. Therefore, a material having a high dielectric constant is desirable for the dielectric layer 14.
　このような耐サージ性を高めるための誘電体層１４を構成する材料としては、酸化タンタルに限らず、誘電率が１０程度以上の様々な誘電体材料を用いることができる。すなわち、好ましくは、誘電体層１４は、このような誘電率を有する、酸化タンタル、酸化チタン、酸化アルミニウムからなる群から選択された１種の誘電体材料により形成することが望ましい。特に好ましくは、誘電率が高く、絶縁抵抗が高められるため、酸化タンタルを用いることが望ましい。 The material constituting the dielectric layer 14 for improving the surge resistance is not limited to tantalum oxide, and various dielectric materials having a dielectric constant of about 10 or more can be used. That is, preferably, the dielectric layer 14 is formed of one kind of dielectric material selected from the group consisting of tantalum oxide, titanium oxide, and aluminum oxide having such a dielectric constant. It is particularly preferable to use tantalum oxide because of its high dielectric constant and high insulation resistance.
　第４の電極層２４であるＡｌ膜を最上部に積層する構造においても、第４の電極層２４であるＡｌ膜の下面側にＴｉ膜やＮｉＣｒ膜を積層し、金属の拡散を防止したり、金属膜間の密着性を高めたりしてもよい。なお、これらの他の金属膜の厚みは、電気的特性に影響を与えないためには、さほど厚くないことが好ましく、例えば２０ｎｍ以下程度のごく薄い厚みとすることが望ましい。 Even in the structure in which the Al film as the fourth electrode layer 24 is laminated on the top, a Ti film or NiCr film is laminated on the lower surface side of the Al film as the fourth electrode layer 24 to prevent metal diffusion. The adhesion between the metal films may be increased. Note that the thickness of these other metal films is preferably not so large as not to affect the electrical characteristics, and is preferably as thin as, for example, about 20 nm or less.
　さらに、積層金属膜内において、Ａｌ膜は複数のＡｌ膜に分割されていてもよい。例えば、Ａｌ膜自体が複数のＡｌ膜を積層した構造を有していてもよい。 Furthermore, in the laminated metal film, the Al film may be divided into a plurality of Al films. For example, the Al film itself may have a structure in which a plurality of Al films are stacked.
　また、Ａｌ膜及びＰｔ膜は、ＡｌやＰｔを主体とする合金により形成されていてもよい。 Further, the Al film and the Pt film may be formed of an alloy mainly composed of Al or Pt.
１…弾性境界波装置
１１…第１の媒質
１２…第２の媒質
１３…第３の媒質
１４…誘電体層
２０…ＩＤＴ電極
２１…第１の電極層
２２…第２の電極層
２３…第３の電極層
２４…第４の電極層
２２ａ、２２ｂ、２５ａ～２５ｄ…層 DESCRIPTION OF SYMBOLS 1 ... Elastic boundary wave apparatus 11 ... 1st medium 12 ... 2nd medium 13 ... 3rd medium 14 ... Dielectric layer 20 ... IDT electrode 21 ... 1st electrode layer 22 ... 2nd electrode layer 23 ... 1st 3 electrode layer 24 ... 4th electrode layer 22a, 22b, 25a-25d ... layer

Claims (15)

  1. 　圧電体からなる第１の媒質と、
    　前記第１の媒質の上に形成されており、誘電体からなる第２の媒質と、
    　前記第２の媒質の上に形成されており、誘電体からなる第３の媒質と、
    　前記第１の媒質と、前記第２の媒質との境界に形成されているＩＤＴ電極とを備え、
    　前記第２の媒質の音速が、前記第１及び第３の媒質の音速よりも遅い弾性境界波装置であって、
    　前記ＩＤＴ電極は、前記第１の媒質の上に形成されている第１の電極層と、前記第１の電極層の上に形成されている第２の電極層と、前記第２の電極層の上に形成されている第３の電極層とを有し、
    　前記第２の電極層の密度は、前記第１及び第３の電極層の密度よりも低く、
    　前記第１の電極層の厚みをｈ１、前記第３の電極層の厚みをｈ３としたときに、０．５５＜ｈ３／（ｈ１＋ｈ３）＜０．９５を満たす、弾性境界波装置。     A first medium made of a piezoelectric body;
    A second medium formed on the first medium and made of a dielectric;
    A third medium formed on the second medium and made of a dielectric;
    An IDT electrode formed at a boundary between the first medium and the second medium;
    A boundary acoustic wave device in which the sound speed of the second medium is slower than the sound speed of the first and third media,
    The IDT electrode includes a first electrode layer formed on the first medium, a second electrode layer formed on the first electrode layer, and the second electrode layer. A third electrode layer formed on the substrate,
    The density of the second electrode layer is lower than the density of the first and third electrode layers,
    A boundary acoustic wave device satisfying 0.55 <h3 / (h1 + h3) <0.95, where h1 is the thickness of the first electrode layer and h3 is the thickness of the third electrode layer.
  2. 　０．７０＜ｈ３／（ｈ１＋ｈ３）＜０．９５を満たす、請求項１に記載の弾性境界波装置。 The boundary acoustic wave device according to claim 1, wherein 0.70 <h3 / (h1 + h3) <0.95 is satisfied.
  3. 　前記第２の電極層の厚みをｈ２、前記ＩＤＴ電極のピッチで定められる弾性境界波の波長をλとしたときに、０．０５＜ｈ２／λ＜０．２５を満たす、請求項１または２に記載の弾性境界波装置。 The thickness of the second electrode layer is h2, and the boundary acoustic wave wavelength determined by the pitch of the IDT electrode is λ, and 0.05 <h2 / λ <0.25 is satisfied. A boundary acoustic wave device according to claim 1.
  4. 　前記第２の媒質の厚みをＨ、前記ＩＤＴ電極のピッチで定められる弾性境界波の波長をλとしたときに、０．３＜Ｈ／λ＜０．７を満たす、請求項１～３のいずれか一項に記載の弾性境界波装置。 4. The relationship of 0.3 <H / λ <0.7 is satisfied, where H is the thickness of the second medium, and λ is the wavelength of the boundary acoustic wave defined by the pitch of the IDT electrodes. The boundary acoustic wave apparatus as described in any one of Claims.
  5. 　前記第１及び第３の電極層のそれぞれが、Ａｕ，Ｐｔ，Ｗ，Ｔａ，Ａｇ及びＣｕからなる群から選ばれた金属またはＡｕ，Ｐｔ，Ｗ，Ｔａ，Ａｇ及びＣｕからなる群から選ばれた一種以上の金属を主成分とする合金からなる、請求項１～４のいずれか一項に記載の弾性境界波装置。 Each of the first and third electrode layers is selected from a metal selected from the group consisting of Au, Pt, W, Ta, Ag and Cu or from a group consisting of Au, Pt, W, Ta, Ag and Cu. The boundary acoustic wave device according to any one of claims 1 to 4, wherein the boundary acoustic wave device is made of an alloy mainly composed of one or more metals.
  6. 　前記第２の電極層が、Ａｌ，Ｔｉ，Ｍｇ，Ｃｒ，Ｆｅ，Ｎｉ，Ａｇ及びＣｕからなる群から選ばれた金属またはＡｌ，Ｔｉ，Ｍｇ，Ｃｒ，Ｆｅ，Ｎｉ，Ａｇ及びＣｕからなる群から選ばれた一種以上の金属を主成分とする合金からなる、請求項１～５のいずれか一項に記載の弾性境界波装置。 The second electrode layer is a metal selected from the group consisting of Al, Ti, Mg, Cr, Fe, Ni, Ag and Cu, or a group consisting of Al, Ti, Mg, Cr, Fe, Ni, Ag and Cu. 6. The boundary acoustic wave device according to claim 1, wherein the boundary acoustic wave device is made of an alloy mainly composed of one or more metals selected from the group consisting of:
  7. 　前記第１及び第３の電極層のそれぞれがＰｔまたはＰｔを主成分とする合金からなり、前記第２の電極層がＡｌまたはＡｌを主成分とする合金からなる、請求項１～６のいずれか一項に記載の弾性境界波装置。 Each of the first and third electrode layers is made of Pt or an alloy containing Pt as a main component, and the second electrode layer is made of Al or an alloy containing Al as a main component. A boundary acoustic wave device according to claim 1.
  8. 　前記第２の媒質が酸化ケイ素からなる、請求項１～７のいずれか一項に記載の弾性境界波装置。 The boundary acoustic wave device according to any one of claims 1 to 7, wherein the second medium is made of silicon oxide.
  9. 　前記第１の媒質がＬｉＮｂＯ３からなる、請求項１～８のいずれか一項に記載の弾性境界波装置。 The boundary acoustic wave device according to any one of claims 1 to 8, wherein the first medium is made of LiNbO 3 .
  10. 　前記第１の媒質が、０°～３７°回転ＹカットＬｉＮｂＯ３基板からなり、ＳＨ型の弾性境界波を用いる、請求項１～９のいずれか一項に記載の弾性境界波装置。 10. The boundary acoustic wave device according to claim 1, wherein the first medium is made of a 0 ° -37 ° rotated Y-cut LiNbO 3 substrate and uses an SH type boundary acoustic wave.
  11. 　前記第３の媒質が、ケイ素、窒化ケイ素、炭化ケイ素、酸化アルミニウムまたは窒化アルミニウムからなる、請求項１～１０のいずれか一項に記載の弾性境界波装置。 The boundary acoustic wave device according to any one of claims 1 to 10, wherein the third medium is made of silicon, silicon nitride, silicon carbide, aluminum oxide, or aluminum nitride.
  12. 　前記第３の媒質が窒化ケイ素からなる、請求項１～１１のいずれか一項に記載の弾性境界波装置。 The boundary acoustic wave device according to any one of claims 1 to 11, wherein the third medium is made of silicon nitride.
  13. 　前記第１の媒質と前記ＩＤＴ電極との間に形成されている誘電体層をさらに備える、請求項１～１２のいずれか一項に記載の弾性境界波装置。 The boundary acoustic wave device according to any one of Claims 1 to 12, further comprising a dielectric layer formed between the first medium and the IDT electrode.
  14. 　前記第１の媒質がＬｉＮｂＯ３基板からなり、
    　前記第１及び第３の電極層のそれぞれがＰｔからなり、前記第２の電極層がＡｌからなり、
    　前記第２の媒質がＳｉＯ２膜からなり、
    　（ｈ１＋ｈ３）、ｈ３／（ｈ１＋ｈ３）、ｈ２、Ｈ、及び前記ＬｉＮｂＯ３基板のカット角が、下記の第１～第３のグループのいずれかの組み合わせとされている、請求項１に記載の弾性境界波装置。
    　（第１のグループ）
    　（ａ１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～27°
    　（ａ２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～30.5°
    　（ａ３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～30°
    　（ａ４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～27.5°
    　（ａ５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～30°
    　（ａ６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
    　（ａ７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～27.5°
    　（ａ８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～30°
    　（ａ９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29°
    　（ａ１０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23°～28.5°
    　（ａ１１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～31°
    　（ａ１２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
    　（ａ１３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23°～29°
    　（ａ１４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～31°
    　（ａ１５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～29°
    　（ａ１６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23°～29.5°
    　（ａ１７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30.5°
    　（ａ１８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～28.5°
    　（ａ１９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30°
    　（ａ２０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31.5°
    　（ａ２１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～30°
    　（ａ２２）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30.5°
    　（ａ２３）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
    　（ａ２４）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～29°
    　（ａ２５）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～30.5°
    　（ａ２６）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～30.5°
    　（ａ２７）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.55～0.575、h2が、0.11λ～0.13λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～28°
    　（第２のグループ）
    　（ｃ１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22°～28.5°
    　（ｃ２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～30°
    　（ｃ３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～28°
    　（ｃ４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～29°
    　（ｃ５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29.5°
    　（ｃ６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～26.5°
    　（ｃ７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29°
    　（ｃ８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～29°
    　（ｃ９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～26.5°
    　（ｃ１０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～28.5°
    　（ｃ１１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～30°
    　（ｃ１２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～27°
    　（ｃ１３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29°
    　（ｃ１４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29°
    　（ｃ１５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～26°
    　（ｃ１６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
    　（ｃ１７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28.5°
    　（ｃ１８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22°～26.5°
    　（ｃ１９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29°
    　（ｃ２０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29.5°
    　（ｃ２１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～26.5°
    　（ｃ２２）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
    　（ｃ２３）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28.5°
    　（ｃ２４）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～26°
    　（ｃ２５）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
    　（ｃ２６）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～27°
    　（ｃ２７）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21°～27°
    　（ｃ２８）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
    　（ｃ２９）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～30.5°
    　（ｃ３０）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～28°
    　（ｃ３１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
    　（ｃ３２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～29.5°
    　（ｃ３３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～25.5°
    　（ｃ３４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
    　（ｃ３５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～28.5°
    　（ｃ３６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、22°～26°
    　（ｃ３７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
    　（ｃ３８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
    　（ｃ３９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～27°
    　（ｃ４０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
    　（ｃ４１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～29°
    　（ｃ４２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、22.5°～25.5°
    　（ｃ４３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～30°
    　（ｃ４４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、25°～27°
    　（ｃ４５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、20.5°～26°
    　（ｃ４６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
    　（ｃ４７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～29.5°
    　（ｃ４８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～25.5°
    　（ｃ４９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、23.5°～30°
    　（ｃ５０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24.5°～28°
    　（ｃ５１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、21°～25.5°
    　（ｃ５２）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～30°
    　（ｃ５３）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、24°～26.5°
    　（ｃ５４）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.425λ～0.475λのとき、LiNbO3のカット角が、19.5°～25.5°
    　（ｃ５５）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
    　（ｃ５６）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
    　（ｃ５７）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～27.5°
    　（ｃ５８）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～3°
    　（ｃ５９）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～29°
    　（ｃ６０）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～26.5°
    　（ｃ６１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30.5°
    　（ｃ６２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～27.5°
    　（ｃ６３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.725～0.775、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、20.5°～25°
    　（ｃ６４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
    　（ｃ６５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30°
    　（ｃ６６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～26.5°
    　（ｃ６７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
    　（ｃ６８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～28.5°
    　（ｃ６９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、21.5°～25°
    　（ｃ７０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30°
    　（ｃ７１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、22°～26°
    　（ｃ７２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、19°～25°
    　（ｃ７３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～31°
    　（ｃ７４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～29.5°
    　（ｃ７５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.05λ～0.07λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23.5°～26°
    　（ｃ７６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～30.5°
    　（ｃ７７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24°～27°
    　（ｃ７８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、20°～25°
    　（ｃ７９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、24.5°～30°
    　（ｃ８０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、23°～26°
    　（ｃ８１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.475λ～0.525λのとき、LiNbO3のカット角が、18°～24.5°
    　（第３のグループ）
    　（ｄ１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、19.5°～25°
    　（ｄ２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、23.5°～29.5°
    　（ｄ３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～28.5°
    　（ｄ４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、19°～25°
    　（ｄ５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、23.5°～29.5°
    　（ｄ６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～28°
    　（ｄ７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、18.5°～24°
    　（ｄ８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、23.5°～29.5°
    　（ｄ９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、27°～29°
    　（ｄ１０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、20°～26°
    　（ｄ１１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、24°～29.5°
    　（ｄ１２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～27.5°
    　（ｄ１３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、20°～26°
    　（ｄ１４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、24.5°～30°
    　（ｄ１５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、26°～29.5°
    　（ｄ１６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、19.5°～25.5°
    　（ｄ１７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～30°
    　（ｄ１８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、26°～31°
    　（ｄ１９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、20.5°～21.5°
    　（ｄ２０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～30°
    　（ｄ２１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～29°
    　（ｄ２２）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、21°～27°
    　（ｄ２３）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、26°～30°
    　（ｄ２４）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25°～30.5°
    　（ｄ２５）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、21°～26.5°
    　（ｄ２６）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、26.5°～30°
    　（ｄ２７）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.275λ～0.325λのとき、LiNbO3のカット角が、25.5°～32°
    　（ｄ２８）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、21.5°～28°
    　（ｄ２９）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～29.5°
    　（ｄ３０）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25.5°～26.5°
    　（ｄ３１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、21.5°～28°
    　（ｄ３２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24.5°～29.5°
    　（ｄ３３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～28°
    　（ｄ３４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～28°
    　（ｄ３５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25.5°～29°
    　（ｄ３６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23.5°～28.5°
    　（ｄ３７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～28.5°
    　（ｄ３８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24.5°～29.5°
    　（ｄ３９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～27°
    　（ｄ４０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22.5°～28.5°
    　（ｄ４１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～29°
    　（ｄ４２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～28.5°
    　（ｄ４３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～29°
    　（ｄ４４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～28°
    　（ｄ４５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～29.5°
    　（ｄ４６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22.5°～29°
    　（ｄ４７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～29°
    　（ｄ４８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23°～28°
    　（ｄ４９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、23.5°～29°
    　（ｄ５０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、25°～28°
    　（ｄ５１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～28.5°
    　（ｄ５２）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、24°～29.5°
    　（ｄ５３）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、26°～30°
    　（ｄ５４）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.325λ～0.375λのとき、LiNbO3のカット角が、22°～30°
    　（ｄ５５）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～29°
    　（ｄ５６）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29°
    　（ｄ５７）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～26°
    　（ｄ５８）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
    　（ｄ５９）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28.5°
    　（ｄ６０）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22°～27°
    　（ｄ６１）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
    　（ｄ６２）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28°
    　（ｄ６３）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.775～0.825、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21°～27.5°
    　（ｄ６４）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23°～29.5°
    　（ｄ６５）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28.5°
    　（ｄ６６）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、22.5°～26.5°
    　（ｄ６７）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
    　（ｄ６８）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28.5°
    　（ｄ６９）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21°～27°
    　（ｄ７０）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～30°
    　（ｄ７１）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～28°
    　（ｄ７２）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.825～0.875、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、20°～27.5°
    　（ｄ７３）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29.5°
    　（ｄ７４）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～28°
    　（ｄ７５）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.07λ～0.09λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、21.5°～26.5°
    　（ｄ７６）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24°～29.5°
    　（ｄ７７）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、24.5°～28°
    　（ｄ７８）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.09λ～0.11λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、20°～27°
    　（ｄ７９）h1+h3が、0.0175λ～0.0225λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、25°～29.5°
    　（ｄ８０）h1+h3が、0.0225λ～0.0275λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、23.5°～29°
    　（ｄ８１）h1+h3が、0.0275λ～0.0325λ、h3/(h1+h3)が、0.875～0.925、h2が、0.11λ～0.13λ、Hが、0.375λ～0.425λのとき、LiNbO3のカット角が、19°～27.5°     The first medium comprises a LiNbO 3 substrate;
    Each of the first and third electrode layers is made of Pt, the second electrode layer is made of Al,
    The second medium is made of a SiO 2 film;
    The elasticity according to claim 1, wherein the cut angles of (h1 + h3), h3 / (h1 + h3), h2, H, and the LiNbO 3 substrate are any combination of the following first to third groups. Boundary wave device.
    (First group)
    (A1) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21.5 ° ~ 27 °
    (A2) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ～ 30.5 °
    (A3) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (A4) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21.5 ° ~ 27.5 °
    (A5) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° -30 °
    (A6) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
    (A7) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21.5 ° ~ 27.5 °
    (A8) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° -30 °
    (A9) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -29 °
    (A10) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23 ° ~ 28.5 °
    (A11) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
    (A12) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (A13) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23 ° ~ 29 °
    (A14) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -31 °
    (A15) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -29 °
    (A16) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
    (A17) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° ~ 30.5 °
    (A18) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° ~ 28.5 °
    (A19) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° -30 °
    (A20) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31.5 °
    (A21) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° -30 °
    (A22) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 30.5 °
    (A23) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
    (A24) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23.5 ° -29 °
    (A25) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23.5 ° ~ 30.5 °
    (A26) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23.5 ° ~ 30.5 °
    (A27) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.55 to 0.575, h2 is 0.11λ to 0.13λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° ~ 28 °
    (Second group)
    (C1) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22 ° ~ 28.5 °
    (C2) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (C3) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -28 °
    (C4) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22.5 ° -29 °
    (C5) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
    (C6) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° ~ 26.5 °
    (C7) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29 °
    (C8) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° -29 °
    (C9) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 26.5 °
    (C10) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22.5 ° ~ 28.5 °
    (C11) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (C12) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -27 °
    (C13) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29 °
    (C14) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 29 °
    (C15) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -26 °
    (C16) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
    (C17) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 25 ° ~ 28.5 °
    (C18) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22 ° ~ 26.5 °
    (C19) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29 °
    (C20) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
    (C21) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 26.5 °
    (C22) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
    (C23) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° ~ 28.5 °
    (C24) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22.5 ° -26 °
    (C25) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
    (C26) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° -27 °
    (C27) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21 ° ~ 27 °
    (C28) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (C29) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 30.5 °
    (C30) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -28 °
    (C31) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (C32) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
    (C33) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 25.5 °
    (C34) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (C35) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 28.5 °
    (C36) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 22 ° ~ 26 °
    (C37) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (C38) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (C39) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -27 °
    (C40) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (C41) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 29 °
    (C42) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 22.5 ° ~ 25.5 °
    (C43) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° -30 °
    (C44) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 25 ° ~ 27 °
    (C45) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 20.5 ° -26 °
    (C46) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (C47) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
    (C48) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 25.5 °
    (C49) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 23.5 ° -30 °
    (C50) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24.5 ° -28 °
    (C51) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 21 ° ~ 25.5 °
    (C52) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° -30 °
    (C53) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 24 ° ~ 26.5 °
    (C54) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.425λ to 0.475λ, LiNbO 3 Cut angle is 19.5 ° ~ 25.5 °
    (C55) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
    (C56) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
    (C57) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° -27.5 °
    (C58) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 3 °
    (C59) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 29 °
    (C60) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° ~ 26.5 °
    (C61) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 30.5 °
    (C62) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 27.5 °
    (C63) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.725 to 0.775, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 20.5 ° -25 °
    (C64) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
    (C65) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° -30 °
    (C66) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° ~ 26.5 °
    (C67) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
    (C68) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 28.5 °
    (C69) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 21.5 ° -25 °
    (C70) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° -30 °
    (C71) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 22 ° ~ 26 °
    (C72) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 19 ° ~ 25 °
    (C73) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 31 °
    (C74) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
    (C75) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.05λ to 0.07λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23.5 ° -26 °
    (C76) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 30.5 °
    (C77) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24 ° ~ 27 °
    (C78) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 20 ° ~ 25 °
    (C79) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 24.5 ° -30 °
    (C80) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 23 ° ~ 26 °
    (C81) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.475λ to 0.525λ, LiNbO 3 Cut angle is 18 ° ~ 24.5 °
    (Third group)
    (D1) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cutting angle is 19.5 ° -25 °
    (D2) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
    (D3) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25.5 ° ~ 28.5 °
    (D4) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 19 ° ~ 25 °
    (D5) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
    (D6) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25.5 ° -28 °
    (D7) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 18.5 ° -24 °
    (D8) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
    (D9) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 27 ° ~ 29 °
    (D10) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 20 ° ~ 26 °
    (D11) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
    (D12) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25 ° ~ 27.5 °
    (D13) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 20 ° ~ 26 °
    (D14) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 24.5 ° -30 °
    (D15) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 26 ° ~ 29.5 °
    (D16) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 19.5 ° ~ 25.5 °
    (D17) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25 ° -30 °
    (D18) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 26 ° ~ 31 °
    (D19) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 20.5 ° ~ 21.5 °
    (D20) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25 ° -30 °
    (D21) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25.5 ° -29 °
    (D22) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 21 ° ~ 27 °
    (D23) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 26 ° -30 °
    (D24) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25 ° ~ 30.5 °
    (D25) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 21 ° ~ 26.5 °
    (D26) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 26.5 ° -30 °
    (D27) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.275λ to 0.325λ, LiNbO 3 Cut angle is 25.5 ° ~ 32 °
    (D28) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 21.5 ° -28 °
    (D29) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
    (D30) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25.5 ° ~ 26.5 °
    (D31) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 21.5 ° -28 °
    (D32) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24.5 ° ~ 29.5 °
    (D33) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24 ° ~ 28 °
    (D34) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22 ° -28 °
    (D35) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25.5 ° -29 °
    (D36) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23.5 ° ~ 28.5 °
    (D37) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22 ° ~ 28.5 °
    (D38) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24.5 ° ~ 29.5 °
    (D39) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24 ° ~ 27 °
    (D40) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22.5 ° ~ 28.5 °
    (D41) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25 ° ~ 29 °
    (D42) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23 ° ~ 28.5 °
    (D43) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23 ° ~ 29 °
    (D44) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25 ° to 28 °
    (D45) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
    (D46) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22.5 ° -29 °
    (D47) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25 ° ~ 29 °
    (D48) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23 ° ~ 28 °
    (D49) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 23.5 ° -29 °
    (D50) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 25 ° to 28 °
    (D51) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22 ° ~ 28.5 °
    (D52) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
    (D53) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 26 ° -30 °
    (D54) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.325λ to 0.375λ, LiNbO 3 Cut angle is 22 ° -30 °
    (D55) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22.5 ° -29 °
    (D56) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 29 °
    (D57) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -26 °
    (D58) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
    (D59) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 25 ° ~ 28.5 °
    (D60) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22 ° ~ 27 °
    (D61) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
    (D62) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 25 ° to 28 °
    (D63) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.775 to 0.825, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21 ° ~ 27.5 °
    (D64) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23 ° ~ 29.5 °
    (D65) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° ~ 28.5 °
    (D66) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 22.5 ° ~ 26.5 °
    (D67) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
    (D68) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° ~ 28.5 °
    (D69) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21 ° ~ 27 °
    (D70) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° -30 °
    (D71) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 28 °
    (D72) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.825 to 0.875, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 20 ° ~ 27.5 °
    (D73) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° ~ 29.5 °
    (D74) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 25 ° to 28 °
    (D75) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.07λ to 0.09λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 21.5 ° ~ 26.5 °
    (D76) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24 ° ~ 29.5 °
    (D77) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 24.5 ° -28 °
    (D78) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.09λ to 0.11λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 20 ° ~ 27 °
    (D79) When h1 + h3 is 0.0175λ to 0.0225λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 25 ° ~ 29.5 °
    (D80) When h1 + h3 is 0.0225λ to 0.0275λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 23.5 ° -29 °
    (D81) When h1 + h3 is 0.0275λ to 0.0325λ, h3 / (h1 + h3) is 0.875 to 0.925, h2 is 0.11λ to 0.13λ, and H is 0.375λ to 0.425λ, LiNbO 3 Cut angle is 19 ° ~ 27.5 °
  15. 　請求項１～１４のいずれか一項に記載の弾性境界波装置の製造方法であって、
    　前記第２の媒質の厚みを調整することにより周波数特性を調整した後に前記第３の媒質を形成する、弾性境界波装置の製造方法。     A method for manufacturing a boundary acoustic wave device according to any one of claims 1 to 14,
    A method for manufacturing a boundary acoustic wave device, wherein the third medium is formed after adjusting the frequency characteristics by adjusting the thickness of the second medium.
PCT/JP2010/058183 2009-05-15 2010-05-14 Boundary acoustic wave device and method for manufacturing same WO2010131736A1 (en)

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* Cited by examiner, † Cited by third party
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WO2005093949A1 (en) * 2004-03-29 2005-10-06 Murata Manufacturing Co., Ltd. Boundary acoustic wave device manufacturing method and boundary acoustic wave device
WO2006114930A1 (en) * 2005-04-25 2006-11-02 Murata Manufacturing Co., Ltd. Boundary acoustic wave device
JP2008067289A (en) * 2006-09-11 2008-03-21 Fujitsu Media Device Kk Surface acoustic wave device and filter
WO2008108215A1 (en) * 2007-03-06 2008-09-12 Murata Manufacturing Co., Ltd. Elastic boundary wave device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005093949A1 (en) * 2004-03-29 2005-10-06 Murata Manufacturing Co., Ltd. Boundary acoustic wave device manufacturing method and boundary acoustic wave device
WO2006114930A1 (en) * 2005-04-25 2006-11-02 Murata Manufacturing Co., Ltd. Boundary acoustic wave device
JP2008067289A (en) * 2006-09-11 2008-03-21 Fujitsu Media Device Kk Surface acoustic wave device and filter
WO2008108215A1 (en) * 2007-03-06 2008-09-12 Murata Manufacturing Co., Ltd. Elastic boundary wave device

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