WO2010124301A3 - Methods and devices for an electrically non-resistive layer formed from an electrically insulating material - Google Patents

Methods and devices for an electrically non-resistive layer formed from an electrically insulating material Download PDF

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Publication number
WO2010124301A3
WO2010124301A3 PCT/US2010/032464 US2010032464W WO2010124301A3 WO 2010124301 A3 WO2010124301 A3 WO 2010124301A3 US 2010032464 W US2010032464 W US 2010032464W WO 2010124301 A3 WO2010124301 A3 WO 2010124301A3
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WO
WIPO (PCT)
Prior art keywords
layer
insulating material
methods
devices
layer formed
Prior art date
Application number
PCT/US2010/032464
Other languages
French (fr)
Other versions
WO2010124301A2 (en
Inventor
Wolf Oetting
Paul Adriani
Original Assignee
Wolf Oetting
Paul Adriani
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wolf Oetting, Paul Adriani filed Critical Wolf Oetting
Priority to EP10767902A priority Critical patent/EP2443664A2/en
Priority to CN2010800280483A priority patent/CN102549766A/en
Publication of WO2010124301A2 publication Critical patent/WO2010124301A2/en
Publication of WO2010124301A3 publication Critical patent/WO2010124301A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Thermistors And Varistors (AREA)

Abstract

A method is described that provides a current carrying substrate and individually controlling film characteristics for a material being simultaneously formed on both sides of the substrate so as to provide a first layer of the material on one side substantially thicker than a second layer on another side of the substrate. The thinned layer is formed from an electrically insulating material but is configured such that the layer provides no significant electrical resistance to current passing through the layer.
PCT/US2010/032464 2009-04-24 2010-04-26 Methods and devices for an electrically non-resistive layer formed from an electrically insulating material WO2010124301A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10767902A EP2443664A2 (en) 2009-04-24 2010-04-26 Methods and devices for an electrically non-resistive layer formed from an electrically insulating material
CN2010800280483A CN102549766A (en) 2009-04-24 2010-04-26 Methods and devices for an electrically non-resistive layer formed from an electrically insulating material

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US17235709P 2009-04-24 2009-04-24
US61/172,357 2009-04-24
US18555909P 2009-06-09 2009-06-09
US61/185,559 2009-06-09

Publications (2)

Publication Number Publication Date
WO2010124301A2 WO2010124301A2 (en) 2010-10-28
WO2010124301A3 true WO2010124301A3 (en) 2011-03-03

Family

ID=43011795

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/032464 WO2010124301A2 (en) 2009-04-24 2010-04-26 Methods and devices for an electrically non-resistive layer formed from an electrically insulating material

Country Status (4)

Country Link
US (1) US20100319757A1 (en)
EP (1) EP2443664A2 (en)
CN (1) CN102549766A (en)
WO (1) WO2010124301A2 (en)

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CN102639758B (en) 2009-06-08 2016-05-18 莫杜美拓有限公司 For etch-proof electroplating nano laminated coating and covering
JP4700130B1 (en) * 2010-02-01 2011-06-15 富士フイルム株式会社 Insulating metal substrate and semiconductor device
CN103038870A (en) * 2010-07-02 2013-04-10 新南创新私人有限公司 Metal contact scheme for solar cells
WO2012045113A1 (en) * 2010-10-05 2012-04-12 Commonwealth Scientific And Industrial Research Organisation Sintered device
FI20116217A (en) * 2011-12-02 2013-06-03 Beneq Oy Photoelectric motor cell of n-type comprising silicon
MX2014008820A (en) * 2012-01-19 2015-07-06 Nuvosun Inc Protective coatings for photovoltaic cells.
CN103286910B (en) 2012-02-24 2015-09-30 比亚迪股份有限公司 A kind of metal-resin integrated molding method and a kind of metal-resin composite
CN103286909B (en) 2012-02-24 2015-09-30 比亚迪股份有限公司 A kind of metal-resin integrated molding method and a kind of metal-resin composite
CN103286995B (en) 2012-02-24 2015-06-24 比亚迪股份有限公司 Preparation method of aluminum alloy-resin composite and aluminum alloy-resin composite prepared by using same
CN103287009B (en) 2012-02-24 2015-03-25 比亚迪股份有限公司 Preparation method of aluminum alloy-resin composite and aluminum alloy-resin composite prepared by using same
US9005357B2 (en) * 2012-05-24 2015-04-14 Agency For Science, Technology And Research Method of preparing molybdenum oxide films
CN102790109A (en) * 2012-08-22 2012-11-21 上海太阳能电池研究与发展中心 Back protection film for stainless steel based film solar cell and preparation method for back protection film
US9276154B2 (en) 2013-02-07 2016-03-01 First Solar, Inc. Photovoltaic device with protective layer over a window layer and method of manufacture of the same
US20140246083A1 (en) * 2013-03-01 2014-09-04 First Solar, Inc. Photovoltaic devices and method of making
US10472727B2 (en) 2013-03-15 2019-11-12 Modumetal, Inc. Method and apparatus for continuously applying nanolaminate metal coatings
EP2971264A4 (en) 2013-03-15 2017-05-31 Modumetal, Inc. Nanolaminate coatings
EP2971261A4 (en) 2013-03-15 2017-05-31 Modumetal, Inc. Electrodeposited compositions and nanolaminated alloys for articles prepared by additive manufacturing processes
CN105143521B (en) * 2013-03-15 2020-07-10 莫杜美拓有限公司 Method and apparatus for continuous application of nanolaminate metal coatings
EA201500949A1 (en) 2013-03-15 2016-02-29 Модьюметл, Инк. METHOD OF FORMING A MULTILAYER COATING, A COATING FORMED BY THE ABOVE METHOD, AND A MULTILAYER COATING
EP2800144A1 (en) * 2013-05-03 2014-11-05 Saint-Gobain Glass France Back contact substrate for a photovoltaic cell or module
CN104746066B (en) 2013-12-31 2017-07-04 比亚迪股份有限公司 Bond material of a kind of metal and plastics and preparation method thereof and the bond material for preparing
CN103774154B (en) * 2014-01-15 2016-01-13 青岛双瑞海洋环境工程股份有限公司 Be applicable to High Efficiency Aluminum Alloy Sacrificial Anode and the preparation technology thereof of low temperature seawater environment
US20150287843A1 (en) * 2014-04-03 2015-10-08 Tsmc Solar Ltd. Solar cell with dielectric layer
US10141474B2 (en) * 2014-08-28 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Passivation method
EA201790644A1 (en) 2014-09-18 2017-08-31 Модьюметал, Инк. METHODS OF PRODUCTION OF PRODUCTS ELECTRICAL PLANTING AND PROCESSES OF LAYERED SYNTHESIS
CA2961508C (en) 2014-09-18 2024-04-09 Modumetal, Inc. A method and apparatus for continuously applying nanolaminate metal coatings
US20170105287A1 (en) * 2015-10-12 2017-04-13 Tyco Electronics Corporation Process of Producing Electronic Component and an Electronic Component
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Also Published As

Publication number Publication date
EP2443664A2 (en) 2012-04-25
WO2010124301A2 (en) 2010-10-28
US20100319757A1 (en) 2010-12-23
CN102549766A (en) 2012-07-04

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