JP2004027360A - Structure and method for manufacturing structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a structure which has a rugged structure of a nano-size having intervals of a nano-scale and is usable as a recording medium, optical functional element, etc. and a method for manufacturing the same. <P>SOLUTION: The structure having projecting parts is formed of a first layer composed to include a first layer which is composed by including a first material, the first projecting parts formed on the first layer, and a plurality of second projecting parts composed by including an anodizable material around the first projecting parts. The first projecting parts are composed of the oxide of the first material. The first material contains at least one element among W, Nb, Mo, Ta, Ti, Zr, and Hf. The first projecting parts are composed of a conductive material. The anodizable material is aluminum. The density of the second projecting parts is ≥2 times the density of the first projecting parts. The difference in the heights between the first and second projecting parts is ≤200 nm. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a structure having a nano-sized uneven structure having a nano-scale interval, and further usable as a recording medium, an optical functional element, and the like, and a method of manufacturing the same.
[0002]
[Prior art]
The production of a porous structure by anodization has conventionally attracted attention as a simple method for forming a structure having irregularities of nanometer to micrometer size. In the anodic oxidation method, generally, a workpiece is immersed in an acidic solution, and a voltage is applied using the workpiece as an anode to simultaneously cause dissolution and oxidation on the surface to form a fine uneven structure. This microstructure is known to exhibit self-organizing regularity under certain conditions (voltage, temperature, type of acid, etc.), and is used for various nanodevices such as recording media and optical functional devices. Is expected.
[0003]
An example is the anodic oxidation of Al. When a voltage is applied using Al as an anode in an aqueous solution of oxalic acid, phosphoric acid, or sulfuric acid, nanoholes covered with a barrier layer (alumina) are formed, and a porous film can be obtained. I can do it. This phenomenon can occur with other metals, but Al can provide cylindrical pores with the best straightness. At this time, pores having regular intervals of several tens of nm (Non-patent Document 1) are obtained, and irregular pores having an average interval of about 18 nm and a diameter of 8 nm (Patent Document 1).
[0004]
Further, a pillar-type structure is also manufactured using a hole-type structure formed by anodization as a template (FIG. 6). In Patent Literature 2 and Non-Patent Literature 2, a hole-type structure (aluminum anodic oxide film) 102 is used as a mold, and pores 103 are filled with a material 104 such as resin or metal. A structure is proposed (Non-Patent Document 3). Thereby, a structure having a nanometer size and a high aspect ratio, which cannot be obtained by a manufacturing method using a semiconductor process, can be manufactured. Here, the aspect ratio represents y / x when the diameter of the pore is x and the depth of the pore is y.
[0005]
Several methods are conceivable for filling a material such as a resin or a metal into the pores for producing a pillar structure. For example, when a liquid resin is filled, the resin may be dropped into a hole opening in a vacuum, or defoaming may be performed by centrifugal force. In order to fill a metal or the like, sputtering or vapor deposition is mainly used. However, this requires careful setting of conditions, and it is difficult to make the height of the pillar structure uniform.
[0006]
In addition, when the hole-type structure serving as a mold is removed after filling them and a pillar-type structure is used as a stamper or the like, a base for supporting the filler is required. However, in order to fix the support base of the filler with an adhesive or the like in order to keep the height of the protrusion of the stamper constant, the support must be strictly parallel to the substrate.
[0007]
The pore spacing by anodization is required to have a finer structure and to be able to be manufactured in a short time. However, to produce a regular starting point by electron beam drawing or the like, several tens nm is the limit. Also takes a long time.
[0008]
As described above, these methods are not good in labor, time, and economy, and there is a need for the development of a simpler method that improves these methods.
[0009]
[Patent Document 1]
JP 2000-195036 A [Patent Document 2]
JP-A-6-32675 [Non-Patent Document 1]
Appl. Phys. Lett. , 72, 1173, 1998
[Non-patent document 2]
Chemistry Letters, 621, 1990, Jpn. J. Appl. 36, 7791, 1997
[Non-Patent Document 3]
J. Vac. Sci. Technol. B. , 19 (2), 569, 2001.
[0010]
[Problems to be solved by the invention]
The present invention has been made in view of such problems, and an object of the present invention is to provide a structure having an easily and controllable uneven structure in which the above-described problems have been improved, and a method of manufacturing the same. To provide.
[0011]
[Means for Solving the Problems]
In order to solve the above problems, the present invention is obtained by forming inclusions by oxidizing or electroplating a base layer from the bottom of the pores of the anodized workpiece, and then removing the anodized layer. It is a nanostructure.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
The structure having a convex portion according to the present invention,
A first layer including a first material, a first protrusion formed on the first layer, and a material surrounding the first protrusion including an anodizable material; And a plurality of second protrusions.
[0013]
The material that can be subjected to the anodizing treatment is, for example, aluminum or silicon. Further, the method for manufacturing a structure having a convex portion according to the present invention includes a step of preparing a member having a second layer on the first layer, a step of forming pores in the second layer, The method is characterized by comprising a step of forming a projection in the pore and a step of removing the second layer. Here, the step of forming the pores is realized by etching or anodic oxidation of the workpiece.
[0014]
One of the methods of the present invention is to anodize a workpiece 1 comprising a substrate 4, an underlayer 3, and an anodized layer 2 containing aluminum as a main component to form pores 7 in the anodized layer 2. (1), and a step (2) of oxidizing the exposed underlying layer 3 in a solution or a gas containing oxygen as a main component to form oxide projections 8 protruding inside the pores. And a step (3) of removing the anodized layer 2 (FIG. 1).
[0015]
Next, as a step (2), when the underlayer 3 is oxidized in a solution that does not attack the alumina by oxidizing the underlayer 3 or in a gas containing oxygen as a main component, the oxide projections 8 increase in volume, so that the oxide protrusions 8 increase from the bottom of the pores. It is filled inside the pores. Here, the solution used is preferably an ammonium borate, ammonium tartrate, ammonium citrate aqueous solution or the like. Finally, when the anodized layer 2 is dissolved and removed with an aqueous solution containing phosphoric acid or the like, a convex structure including the oxide projections 8 is obtained.
[0016]
According to another method of the present invention, a workpiece 1 comprising a substrate 4, a base layer 3, and an anodized layer 2 containing aluminum as a main component is anodized to form pores 7 in the anodized layer 2. It comprises a step (1), a step (4) of forming a conductive substance projection 13 from the bottom of the pore 7 into the pore by electroplating, and a step (3) of removing the anodized layer 2 (FIG. 2). ).
[0017]
Step (1) is the same as the method of the present invention described above, but the workpiece may be an aluminum plate having no underlayer, or a conductive underlayer such as a tungsten film on the insulating substrate 4. 3 and an aluminum film may be further laminated thereon.
[0018]
Still another method of the present invention is to laminate a material different from the structure by a technique such as sputtering or vapor deposition on a structure formed by the method of the present invention or another method described above (FIG. 3). . Although depending on the lamination conditions, the surface of the laminate 10 generally has a convex shape reflecting the surface shape of the lower layer convex structure. When the convex structure of the structure is used as a stamper, a certain degree of strength is required. When the initial convex structure alone is too weak, a material having high hardness such as tungsten (W) is laminated and reinforced. Good. Further, by repeatedly laminating materials having different dielectric constants, it is possible to realize a function as a photonic crystal having three-dimensional periodicity.
[0019]
Another method of the present invention is a special case of yet another method. As shown in FIG. 5A, the height of the convex structure formed by the oxide protrusion 8 or the conductive material protrusion 13 according to the method of the present invention or another method, and the residual protrusion 9 of the anodized layer 2 in the step (3). Is made substantially the same (preferably, the difference between the former and the latter is less than 200 nm), and this is used as a stamper by another method. Point.
[0020]
Before starting the anodic oxidation in the step (1) of the method of the present invention or another method, a concave structure starting point regularly arranged by an electron beam (EB) or the like is prepared in advance, and an applied voltage corresponding to the interval is formed. When anodization is performed below, regularly arranged pores are obtained, and as a result, similarly regularly arranged convex structures are obtained. The residual projections 9 of the anodized layer are triangular pyramids located in a hexagonal shape with the convex structure as the center of gravity as shown in FIG. Starting from the concave structure 11 produced using this as a stamper (FIG. 5 (b)), when the anodic oxidation is performed again under an appropriate applied voltage, the pores formed by the anodic oxidation performed for producing the stamper are formed. With respect to the interval A, the pores 7 having the interval A / 3 ^1/2 can be obtained. That is, by repeating this, a finer structure can be manufactured in a short time.
[0021]
The structure according to the present invention includes a hole-type structure having a surface on which a large number of concave structures are arranged and a pillar-type structure having a surface on which a large number of convex structures are arranged. It can be used as a base material for forming an optical functional element or a recording medium using a simple structure. The structure of the present invention is preferably one in which the maximum value of the diameter of the convex structure or the maximum value of the internal diameter of the concave structure that forms the uneven structure surface does not exceed 1000 nm. A typical form of the concave structure is a hole forming a columnar hollow portion having a substantially circular cross section, and a typical form of the convex structure is a column shape having a substantially circular cross section.
[0022]
The pillar-type structure in the structure of the present invention includes, for example, a anodic oxidized layer made of a material capable of forming fine pores by anodic oxidation on an underlayer made of a material which undergoes volume expansion by oxidation. Then, the anodized layer is anodically oxidized to form a large number of pores extending in the layer thickness direction. The exposed portion is oxidized and expanded in a state where the underlying layer is exposed at the bottom of each pore, and the underlying layer is formed. It can be obtained by a method of forming a convex structure made of an oxide of a constituent material.
[0023]
The present invention is a method for manufacturing a convex structure by filling a material from the bottom of the concave structure by anodic oxidation, and it is possible to easily manufacture a finer concave structure by utilizing this.
[0024]
Further, by using the manufacturing method of the present invention, it is possible to obtain a structure having a pillar-shaped convex structure which has a finer and regular structure than the conventional one and is easy to manufacture.
[0025]
One embodiment of the method for obtaining the structure of the present invention is a method of manufacturing a pillar-type structure having a convex structure. The workpiece 1 including the base layer 3 and the anodized layer 2 is anodized to form a structure. A step of forming pores 7 in anodic oxide layer 2 (FIG. 1A) and a step of oxidizing underlying layer 3 exposed thereby to form oxide 8 protruding inside pores 7 (FIG. 1 ( c)) and a step of removing the anodized layer 2 (FIG. 1D). If necessary, the pores formed by anodic oxidation can be further expanded by treating the pores with an acidic solution.
[0026]
The method of manufacturing a structure according to the present invention includes forming an inclusion by oxidizing or electroplating an underlayer from the bottom of the pores of the anodized workpiece, and then removing the anodized layer to form a convex shape. A structure is manufactured.
[0027]
According to the method of the present invention, a step of forming a pore 7 in the anodized layer 2 by anodizing the workpiece 1 comprising the substrate 4, the underlayer 3, and the anodized layer 2 containing aluminum as a main component ( 1) a step (2) of oxidizing the exposed underlying layer 3 in a solution or in a gas containing oxygen as a main component to form oxide projections 8 protruding inside the pores; 2 (3) (FIG. 1).
[0028]
For example, an underlayer 3 containing at least one element selected from W, Nb, Mo, Ta, Ti, Zr and Hf is formed on a substrate 4 such as Si by sputtering or vapor deposition, and Al is formed thereon. An anodized film 2 as a main component is formed. The anodized film 2 may contain other components in a content that does not inhibit the formation of nanoholes by anodic oxidation. Next, using this as an anode, an appropriate voltage is applied in a processing solution to form pores 7 until the underlayer 3 is exposed (step (1)) (FIG. 1 (a)). It is preferable to use an aqueous solution of oxalic acid, phosphoric acid or sulfuric acid or a mixture thereof as the treatment liquid. Further, another acidic solution can be used. An appropriate applied voltage is determined from a desired pore interval, and it is known that the applied voltage (V) is approximately equal to the pore interval (nm) /2.5. The temperature at this time may be any temperature at which the treatment liquid does not solidify or boil, and the anodized layer can be efficiently dissolved.
[0029]
Next, in step (2), when the underlayer 3 is oxidized and the underlayer 3 is oxidized in a solution that does not attack alumina, the volume of the oxide 8 increases, so that the oxide 8 expands from the bottom of the pores to the inside, and the protrusions 8 are formed. Is formed (FIG. 1C). Here, the solution used is preferably an ammonium borate, ammonium tartrate, ammonium citrate aqueous solution or the like. Finally, when the anodized layer 2 is dissolved and removed with an aqueous solution containing phosphoric acid or the like, a pillar-shaped convex structure made of the underlayer oxide 8 is obtained (FIG. 1D).
[0030]
According to another method of the present invention, a workpiece 1 comprising a substrate 4, a base layer 3, and an anodized layer 2 containing aluminum as a main component is anodized to form pores 7 in the anodized layer 2. It comprises a step (1), a step (4) of forming a conductive substance projection 13 from the bottom of the pore 7 into the pore by electroplating, and a step (3) of removing the anodized layer 2 (FIG. 2). ).
[0031]
Step (1) is the same as the method of the present invention described above, but the workpiece may be an aluminum plate having no underlayer, or a conductive underlayer such as a tungsten film on the insulating substrate 4. 3 and an aluminum film may be further laminated thereon.
[0032]
Next, as a step (4), the workpiece is immersed in the electroplating bath, and plating is performed using the bottom of the pores 7 as an electrode. Various materials such as Cu, Ag, and Co can be used as the plating material. The type of the plating bath is preferably one that does not attack the alumina of the anodized layer 2. Finally, when the anodized layer 2 is dissolved and removed with a mixed solution of a phosphoric acid aqueous solution and a chromic acid aqueous solution, a convex structure made of a plating material is obtained.
[0033]
Still another method of the present invention is to laminate a material different from the structure by a technique such as sputtering or vapor deposition on a structure formed by the method of the present invention or another method described above (FIG. 3). . Although depending on the lamination conditions, the surface of the laminated material 10 generally has a convex shape reflecting the surface shape of the convex structure of the lower layer.
[0034]
When the convex structure of the structure is used as a stamper, a certain degree of strength is required. When the strength is low only with the initial convex structure, a material having high hardness such as tungsten may be laminated thereon. In addition, a function as a photonic crystal having three-dimensional periodicity can be realized by repeatedly laminating materials having different dielectric constants while preserving the structure by oblique incidence film formation or the like.
[0035]
Another method of the present invention is a special case of yet another method. As shown in FIG. 5A, the height of the convex structure formed by the oxide protrusion 8 or the conductive material protrusion 13 according to the method of the present invention or another method, and the residual protrusion 9 of the anodized layer 2 in the step (3). Is made substantially the same (preferably, the difference between the former and the latter is less than 200 nm), and this is used as a stamper by another method. Point. At this time, it is preferable that the difference in height between the protrusions 8 in the stamper and the residual protrusions 9 after the removal of the anodized layer 2 is 200 nm or less. Either the convex structure 8 or the residual protrusion after the removal of the coating anodized layer 2 may be higher.
[0036]
Before starting the anodic oxidation in the step (1) of the method of the present invention or another method, a starting point of a concave structure which is regularly arranged by an electron beam (EB) or the like is prepared in advance, and an applied voltage corresponding to the interval is formed. When anodization is performed below, regularly arranged pores are obtained, and as a result, similarly regularly arranged convex structures are obtained. The residual projections 9 of the anodized layer are triangular pyramids located in a hexagonal shape with the convex structure as the center of gravity as shown in FIG. Starting from the concave structure 11 produced using this as a stamper (FIG. 5 (b)), when the anodic oxidation is performed again under an appropriate applied voltage, the pores formed by the anodic oxidation performed for producing the stamper are formed. With respect to the interval A, the pores 7 having the interval A / 3 ^1/2 can be obtained. That is, by repeating this, a finer structure can be manufactured in a short time.
[0037]
For anodization, for example, in order to produce an alumina uneven structure at intervals of about 100 nm, it is preferable to apply 40 V at 16 ° C. in a 0.3 mol / l oxalic acid aqueous solution with the anodized oxide as an anode. The produced concavo-convex structure can be observed with an electron microscope or the like, and its regularity can be evaluated with an X-ray diffractometer or the like.
[0038]
In addition, by using a structure that has a convex structure as a stamper even for a substance that cannot produce nanoholes by anodic oxidation, it is possible to produce a structure that has a finer and irregular structure than the pore spacing in the stamper. Can be done. In addition, a structure having an irregular structure can be manufactured by performing anodic oxidation on a substance capable of forming nanoholes by anodic oxidation under the condition that self-organization does not occur. For example, the conditions of anodic oxidation that do not cause self-assembly can be set to 40 V and 16 ° C. using a phosphoric acid solution as a processing solution. A structure having an irregular structure can be used as a recording medium and an optical functional element, for example, by embedding a magnetic material in the structure, like the structure.
[0039]
【Example】
[Example 1]
Fabrication of Structure An example of the method of the present invention will be described.
[0040]
According to the method of the present invention, as shown in FIG. 1, a workpiece 1 composed of a base layer 3 and an anodized layer 2 containing aluminum as a main component is anodized to form pores 7 in the anodized layer 2. A step (1), a step (2) of oxidizing the exposed underlying layer 3 in a solution to form oxide projections 8 protruding into the pores, and a step (3) of removing the anodized layer 2 Consists of
[0041]
When the exposed underlayer is oxidized to form the oxide projections 8, a heat treatment is performed in an atmosphere containing oxygen, or a heat treatment is performed in an atmosphere containing oxygen after the surface layer of the underlayer is removed by etching. Or you may.
[0042]
A workpiece 1 in which an Nb film of about 100 nm was laminated as a base layer 3 on a substrate 4 made of Si by sputtering, and an Al film of about 1000 nm was further laminated as an anodized layer 2 was used. In step (1), the workpiece 1 is immersed in an aqueous solution of oxalic acid at 16 ° C. as an anode and subjected to anodization at an applied voltage of 40 V to dissolve and oxidize while forming an Al (alumina) film on the pore walls. Proceeded, and pores 7 arranged at intervals of about 100 nm were formed (FIG. 1A). This condition is a self-assembly condition of the anodic oxidation, and if it is performed for a long time, regularly arranged pores can be obtained.
[0043]
When the pores 7 reach the Nb underlayer 3, the anodic oxidation is terminated, and after washing with water, the pores are enlarged by immersing in an aqueous phosphoric acid solution for about 40 minutes to dissolve the alumina film (FIG. 1 (b)). . Next, as a process (2), when the workpiece 1 is immersed in an aqueous solution of ammonium borate as an anode and oxidized, a volume-expanded oxide is formed inside the pores, and the oxide has a height proportional to the applied voltage. An Nb oxide 8 was formed (FIG. 1C). For example, at an applied voltage of 50 V, the height of the Nb oxide 8 was about 60 nm, about 120 nm at 70 V, and about 180 nm at 100 V. Finally, as a step (3), when the alumina portion is removed by immersion in a mixed solution of a phosphoric acid aqueous solution and a chromic acid aqueous solution, if the pores are regular, the Al convex structure 9 remaining between the pores is removed as shown in FIG. As shown in the above, the layer remains between the Nb oxides 8, and if it is irregular, it remains in a somewhat distorted arrangement.
[0044]
[Example 2]
An example of another method of the present invention will be described.
[0045]
According to another method of the present invention, as shown in FIG. 2, a workpiece 1 comprising an underlayer 3 and an anodized layer 2 containing aluminum as a main component is anodized to form pores 7 in the anodized layer 2. It comprises a step (1) of forming, a step (4) of forming a conductive substance projection 13 from the bottom of the pore 7 into the inside of the pore by electroplating, and a step (3) of removing the anodized layer 2.
[0046]
Step (1) is the same as in the first embodiment, and the underlayer 3 is a tungsten film. In this case, since a conductive portion is formed between the pores 7 and the tungsten underlayer 3, it is possible to conduct electricity from inside the pores to the underlayer. Next, as a step (4), the workpiece is immersed in the nickel electroplating bath, and plating is performed using the bottom of the pores 7 as a cathode. Since the plating bath is generally acidic or strongly acidic, it is preferable to select a plating bath that does not corrode the alumina film 5 having pores. Finally, when the step (3) is performed in the same manner as in Example 1, residual protrusions 9 of aluminum remaining between the pores are obtained as shown in FIG. 4, which is reflected if the pores are irregular. It remains as an array.
[0047]
[Example 3]
Fabrication of Structure Having Protective Layer on Irregular Structure Surface of Structure The following is an example of still another method of the present invention.
[0048]
According to still another method of the present invention, as shown in FIG. 3, a material different from the structure is laminated on the structure manufactured by the above-described embodiment 1 or 2 by a technique such as sputtering or vapor. . Although depending on the lamination conditions, the surface of the laminate 10 generally has a convex shape reflecting the surface shape of the lower layer convex structure.
[0049]
As an example, when the produced convex structure is used as a stamper, the Nb oxide projection or the Ni oxide projection may have too low strength. At this time, when a material having high hardness such as tungsten is laminated by sputtering, a convex structure reflecting the surface shape is formed as shown in FIG.
[0050]
The height of the Nb oxide protrusion formed at the interval of 100 nm and the applied voltage of 70 V manufactured in Example 1 is about 120 nm, and when tungsten is sputtered to a thickness of 150 nm, the column mainly has a column height of 280 nm and a height difference of 35 nm. A convex structure is obtained, and the curvature of the concave portion is kept low. When a load of 196 MPa (2000 kgf / cm ² ) was applied to the structure before tungsten sputtering, the Nb oxide protrusions were crushed and flattened, but no change was observed in the shape after sputtering.
[0051]
[Example 4]
Fabrication of Structure Using Stamper An example of another method of the present invention will be described. As shown in FIG. 5A, the height of the convex structure formed by the oxide protrusion 8 or the conductive material protrusion 13 according to the method of the present invention or another method, and the remaining protrusion 9 of the anodized layer 2 in the step (3). Are made substantially the same, and this is used as a stamper by another method, and the produced concave structure 11 is newly used as a starting point of anodic oxidation.
[0052]
In the same manner as in Example 1, a workpiece 1 in which an Nb film of about 100 nm is laminated as a base layer 3 on a substrate 4 made of Si by sputtering, and an Al film of about 1000 nm is further laminated as an anodized layer 2 is used. Was. A concave structure (FIG. 4) consisting of a regular triangular lattice having a period of 100 nm was prepared on the Al surface by electron beam lithography, and anodic oxidation was performed under the same conditions as in step (1) of Example 1 to obtain a phosphoric acid aqueous solution. And a chromic acid aqueous solution to increase the pore diameter. Since this mixed solution dissolves alumina preferentially over Al, the Al portion present between the pores remains as projections 9 having a height of several nm to several tens nm (FIG. 4). ).
[0053]
Next, an Nb oxide 8 is formed in the same manner as in Example 1. At this time, the applied voltage is set so that the height of the Nb oxide 8 becomes the same as the height of the residual protrusion 9 as shown in FIG. It was adjusted.
[0054]
Next, in order to obtain the strength as a stamper, tungsten was sputtered by about 100 nm in the same manner as in Example 3 to obtain a stamper having a sectional structure as shown in FIG. Here, A = 100 nm. Next, when this is stamped on the Al plate 12 at a pressure of 294 MPa (3000 kgf / cm ² ) (FIG. 5B), a triangular lattice-shaped concave structure 11 having a period of A / 3 ^1/2 = 58 nm is formed on the surface. (FIG. 5 (c)). When anodic oxidation is performed at an applied voltage of 23 V in an aqueous solution of oxalic acid at 10 ° C. or an aqueous solution of phosphoric acid at 10 ° C., the period A of the pores due to the anodic oxidation performed to produce the stamper as shown in FIG. contrast, was able to obtain a periodic a / 3 ^1/2 a fine pore. That is, a periodic structure with an interval impossible by electron beam drawing or the like could be manufactured by this method.
[0055]
【The invention's effect】
The structure thus produced according to the present invention can be used as a magnetic recording medium, for example, by embedding a ferromagnetic material in pores. Since this magnetic recording medium has a finer and more uniform structure on the nanoscale than the conventional recording medium, it enables high-density recording and reduces the size of recording devices and media. Make it possible.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating a method of the present invention. (A) is a diagram showing a process of forming pores 7 in anodized layer 2 by anodizing workpiece 1, and (b) is a diagram showing pores 7 formed by treating in an acidic solution. FIG. 3C is a diagram illustrating a step of further expanding the exposed base layer 3 to form an oxide 8 protruding inside the pores, and FIG. FIG. 4 is a diagram illustrating a step of removing an anodized layer 2.
FIG. 2 is a cross-sectional view illustrating another method of the present invention.
FIG. 3 is a cross-sectional view illustrating a structure in which a material different from the structure is further laminated on the structure.
FIG. 4 is a top view illustrating a structure used as a stamper.
FIG. 5 is a view illustrating a method of manufacturing a pillar type structure according to the present invention. (A) is sectional drawing showing the stamper which performed sputtering after anodization, (b) is the schematic diagram showing the state which is stamping using a stamper, (c) is stamped. It is sectional drawing showing the concave structure of the Al plate after, and (d) is sectional drawing showing the concave structure after performing anodic oxidation starting from the stamped concave structure as a starting point.
FIG. 6 is a view illustrating a conventional method of manufacturing a pillar type structure. (A) is a cross-sectional view illustrating a hole-type structure, (b) is a cross-sectional view illustrating a state in which a material 104 such as a resin or a metal is filled in a pore 103, and (c) is a mold. It is a sectional view showing a pillar type structure after removing 102, and (d) is a sectional view showing a state where stamping and filling are performed using a pillar structure as a template, and structure transfer is performed.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Workpiece 2 Anodized layer 3 Underlayer 4 Substrate 5 Alumina film 6 Aluminum film 7 Pores 8 Oxide protrusion 9 Residual protrusion 10 Stack 11 Convex structure 12 Aluminum 13 Conductive substance protrusion 101 Aluminum 102 Aluminum anodic oxide film 103 pore 104 material such as resin and metal 105 hole type structure

Claims (17)

A structure having a convex portion,
A first layer including a first material, a first protrusion formed on the first layer, and a material surrounding the first protrusion including an anodizable material; A structure comprising a plurality of second protrusions. The structure according to claim 1, wherein the first protrusion is made of an oxide of the first material. The structure according to claim 1, wherein the first material contains at least one element of W, Nb, Mo, Ta, Ti, Zr, and Hf. The structure according to claim 1, wherein the first protrusion is made of a conductive material. The structure according to claim 1, wherein the anodizable material is aluminum. 2. The structure according to claim 1, wherein the density of the second protrusion is at least twice the density of the first protrusion. 3. The structure according to claim 1, wherein a difference between the heights of the first and second protrusions is 200 nm or less. The structure according to claim 1, wherein the first and second protrusions are regularly arranged. The structure according to claim 1, wherein a protective layer is formed on the first and second protrusions. A method for manufacturing a structure having a convex portion,
Preparing a member having a second layer on the first layer;
Forming pores in the second layer;
A method for manufacturing a structure, comprising a step of forming a projection in the pore and a step of removing the second layer. The method according to claim 10, wherein the step of forming the protrusion is a step of oxidizing the first layer exposed at the bottom of the pore. The method according to claim 10, wherein the step of forming the protrusion is a step of filling a conductive material in the pore. The method for manufacturing a structure according to claim 10, wherein the step of forming pores in the second layer is an anodic oxidation step. The method of manufacturing a structure according to claim 10, wherein the step of removing the second layer causes a plurality of protrusions to appear around the protrusion. The method according to claim 10, wherein a difference between the height of the protrusion and the height of the protrusion is 200 nm or less. The said 2nd layer is comprised including aluminum, The said 1st layer is a layer comprised including at least one element among W, Nb, Mo, Ta, Ti, Zr, and Hf. The method of manufacturing the structure. A method for manufacturing a structure, wherein the structure according to claim 1 is used as a stamper, and the film to be processed has a depression.

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