WO2010123232A3 - Reaction apparatus for producing trichlorosilane gas - Google Patents

Reaction apparatus for producing trichlorosilane gas Download PDF

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Publication number
WO2010123232A3
WO2010123232A3 PCT/KR2010/002411 KR2010002411W WO2010123232A3 WO 2010123232 A3 WO2010123232 A3 WO 2010123232A3 KR 2010002411 W KR2010002411 W KR 2010002411W WO 2010123232 A3 WO2010123232 A3 WO 2010123232A3
Authority
WO
WIPO (PCT)
Prior art keywords
gas
casing
reaction apparatus
silicon tetrachloride
heater
Prior art date
Application number
PCT/KR2010/002411
Other languages
French (fr)
Korean (ko)
Other versions
WO2010123232A2 (en
Inventor
권영진
김정희
Original Assignee
에이디알엠테크놀로지(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이디알엠테크놀로지(주) filed Critical 에이디알엠테크놀로지(주)
Publication of WO2010123232A2 publication Critical patent/WO2010123232A2/en
Publication of WO2010123232A3 publication Critical patent/WO2010123232A3/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • C01B33/1071Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/26Nozzle-type reactors, i.e. the distribution of the initial reactants within the reactor is effected by their introduction or injection through nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/32Packing elements in the form of grids or built-up elements for forming a unit or module inside the apparatus for mass or heat transfer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/005Separating solid material from the gas/liquid stream
    • B01J8/006Separating solid material from the gas/liquid stream by filtration
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1809Controlling processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1818Feeding of the fluidising gas
    • B01J8/1827Feeding of the fluidising gas the fluidising gas being a reactant
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008Controlling the process
    • B01J2208/00017Controlling the temperature
    • B01J2208/00106Controlling the temperature by indirect heat exchange
    • B01J2208/00265Part of all of the reactants being heated or cooled outside the reactor while recycling
    • B01J2208/00274Part of all of the reactants being heated or cooled outside the reactor while recycling involving reactant vapours
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008Controlling the process
    • B01J2208/00017Controlling the temperature
    • B01J2208/00433Controlling the temperature using electromagnetic heating
    • B01J2208/00469Radiofrequency
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008Controlling the process
    • B01J2208/00017Controlling the temperature
    • B01J2208/00477Controlling the temperature by thermal insulation means
    • B01J2208/00495Controlling the temperature by thermal insulation means using insulating materials or refractories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008Controlling the process
    • B01J2208/00017Controlling the temperature
    • B01J2208/00513Controlling the temperature using inert heat absorbing solids in the bed

Abstract

The present invention relates to a reaction apparatus for producing trichlorosilane gas. The reaction apparatus comprises: a cylindrical casing which receives silicon tetrachloride gas and hydrogen gas through the lower portion thereof and guides the received gas to the upper portion thereof; a heater installed in the casing to supply heat into the casing; an induction heating unit for induction-heating the heater; a heating medium which is injected into the casing and which is constituted by inert inorganic particles; and a plurality of nozzles arranged in the lower portion of the casing to spray the silicon tetrachloride gas and the hydrogen gas into the casing. The thus-configured reaction apparatus for producing trichlorosilane gas according to the present invention enables the silicon tetrachloride gas and the hydrogen gas to be remarkably uniformly mixed, and in particular has superior heat transfer efficiency, improved overall operating efficiency, and low operating costs. The reaction apparatus of the present invention minimizes the temperature of the heater relative to the mixture gas of the silicon tetrachloride gas and the hydrogen gas to prevent a side reaction of the hydrogen gas with the heater, thereby producing high purity trichlorosilane gas.
PCT/KR2010/002411 2009-04-20 2010-04-19 Reaction apparatus for producing trichlorosilane gas WO2010123232A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090034222A KR101117290B1 (en) 2009-04-20 2009-04-20 Conversion reactor for making trichlorosilane gas
KR10-2009-0034222 2009-04-20

Publications (2)

Publication Number Publication Date
WO2010123232A2 WO2010123232A2 (en) 2010-10-28
WO2010123232A3 true WO2010123232A3 (en) 2011-03-10

Family

ID=43011578

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/002411 WO2010123232A2 (en) 2009-04-20 2010-04-19 Reaction apparatus for producing trichlorosilane gas

Country Status (2)

Country Link
KR (1) KR101117290B1 (en)
WO (1) WO2010123232A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011077970A1 (en) * 2011-06-22 2012-12-27 Wacker Chemie Ag Apparatus and process for the temperature treatment of corrosive gases
CN104609427B (en) * 2015-02-13 2016-08-24 扬州市优珂电气有限公司 There is the Silicon chloride. conducting furnace of ladder power

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1454670A1 (en) * 2003-03-03 2004-09-08 Hemlock Semiconductor Corporation Apparatus for contacting gases at high temperature
US20080112875A1 (en) * 2005-02-03 2008-05-15 Wacker Chemie Ag Method For Producing Trichlorosilane By Thermal Hydration Of Tetrachlorosilane
US20090060817A1 (en) * 2007-09-05 2009-03-05 Shin-Etsu Chemical Co., Ltd. Method for producing trichlorosilane
US20090060820A1 (en) * 2007-09-05 2009-03-05 Shin-Etsu Chemical Co., Ltd. Method for producing trichlorosilane and method for producing polycrystalline silicon

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19534922C1 (en) * 1995-09-21 1997-02-20 Wacker Chemie Gmbh Prodn. of tri:chloro:silane
JP5012449B2 (en) * 2006-11-28 2012-08-29 三菱マテリアル株式会社 Trichlorosilane production equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1454670A1 (en) * 2003-03-03 2004-09-08 Hemlock Semiconductor Corporation Apparatus for contacting gases at high temperature
US20080112875A1 (en) * 2005-02-03 2008-05-15 Wacker Chemie Ag Method For Producing Trichlorosilane By Thermal Hydration Of Tetrachlorosilane
US20090060817A1 (en) * 2007-09-05 2009-03-05 Shin-Etsu Chemical Co., Ltd. Method for producing trichlorosilane
US20090060820A1 (en) * 2007-09-05 2009-03-05 Shin-Etsu Chemical Co., Ltd. Method for producing trichlorosilane and method for producing polycrystalline silicon

Also Published As

Publication number Publication date
WO2010123232A2 (en) 2010-10-28
KR101117290B1 (en) 2012-03-20
KR20100115582A (en) 2010-10-28

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