WO2010111589A3 - Storage devices with soft processing - Google Patents

Storage devices with soft processing Download PDF

Info

Publication number
WO2010111589A3
WO2010111589A3 PCT/US2010/028826 US2010028826W WO2010111589A3 WO 2010111589 A3 WO2010111589 A3 WO 2010111589A3 US 2010028826 W US2010028826 W US 2010028826W WO 2010111589 A3 WO2010111589 A3 WO 2010111589A3
Authority
WO
WIPO (PCT)
Prior art keywords
storage element
storage
storage devices
soft processing
analog signal
Prior art date
Application number
PCT/US2010/028826
Other languages
French (fr)
Other versions
WO2010111589A2 (en
Inventor
Benjamin Vigoda
Eric Nestler
Jeffrey Bernstein
David Reynolds
Alexander Alexeyev
Jeffrey Venuti
William Bradley
Vladimir Zlatkovic
Original Assignee
Benjamin Vigoda
Eric Nestler
Jeffrey Bernstein
David Reynolds
Alexander Alexeyev
Jeffrey Venuti
William Bradley
Vladimir Zlatkovic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/537,081 external-priority patent/US8107306B2/en
Priority claimed from US12/537,060 external-priority patent/US20100220514A1/en
Application filed by Benjamin Vigoda, Eric Nestler, Jeffrey Bernstein, David Reynolds, Alexander Alexeyev, Jeffrey Venuti, William Bradley, Vladimir Zlatkovic filed Critical Benjamin Vigoda
Publication of WO2010111589A2 publication Critical patent/WO2010111589A2/en
Publication of WO2010111589A3 publication Critical patent/WO2010111589A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters 

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)

Abstract

A storage device includes a storage array having a group of storage elements. Each storage element can written to a discrete set of physical states. A read circuit selects one or more storage elements and generates, for each selected storage element, an analog signal representative of the physical state of the selected storage element. A signal processing circuit processes the analog signal to generate a plurality of outputs, with each output representing a degree of an association of the selected storage element with a different subset of one or more of the discrete set of physical states
PCT/US2010/028826 2009-03-27 2010-03-26 Storage devices with soft processing WO2010111589A2 (en)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
US16407809P 2009-03-27 2009-03-27
US61/164,078 2009-03-27
US18031309P 2009-05-21 2009-05-21
US61/180,313 2009-05-21
US12/537,081 2009-08-06
US12/537,081 US8107306B2 (en) 2009-03-27 2009-08-06 Storage devices with soft processing
US12/537,045 2009-08-06
US12/537,060 2009-08-06
US12/537,060 US20100220514A1 (en) 2009-03-02 2009-08-06 Storage devices with soft processing
US12/537,045 US8179731B2 (en) 2009-03-27 2009-08-06 Storage devices with soft processing
US24684509P 2009-09-29 2009-09-29
US24696809P 2009-09-29 2009-09-29
US61/246,968 2009-09-29
US61/246,845 2009-09-29

Publications (2)

Publication Number Publication Date
WO2010111589A2 WO2010111589A2 (en) 2010-09-30
WO2010111589A3 true WO2010111589A3 (en) 2011-01-13

Family

ID=42781906

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/028826 WO2010111589A2 (en) 2009-03-27 2010-03-26 Storage devices with soft processing

Country Status (1)

Country Link
WO (1) WO2010111589A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201037529A (en) 2009-03-02 2010-10-16 David Reynolds Belief propagation processor
US8179731B2 (en) 2009-03-27 2012-05-15 Analog Devices, Inc. Storage devices with soft processing
US8972831B2 (en) 2010-01-11 2015-03-03 Analog Devices, Inc. Belief propagation processor
JP6510058B2 (en) 2015-10-22 2019-05-08 株式会社東芝 Demodulation of non-uniform QAM signal
US9768913B1 (en) * 2016-03-09 2017-09-19 Samsung Electronics Co., Ltd System and method for multiple input multiple output (MIMO) detection with soft slicer
US10725913B2 (en) 2017-10-02 2020-07-28 Micron Technology, Inc. Variable modulation scheme for memory device access or operation
US11403241B2 (en) 2017-10-02 2022-08-02 Micron Technology, Inc. Communicating data with stacked memory dies
US10446198B2 (en) * 2017-10-02 2019-10-15 Micron Technology, Inc. Multiple concurrent modulation schemes in a memory system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980022518A (en) * 1996-09-23 1998-07-06 김광호 Nonvolatile Semiconductor Memory Device
US6094368A (en) * 1999-03-04 2000-07-25 Invox Technology Auto-tracking write and read processes for multi-bit-per-cell non-volatile memories
US6212654B1 (en) * 1997-07-22 2001-04-03 Lucent Technologies Inc. Coded modulation for digital storage in analog memory devices
US20030021149A1 (en) * 1997-09-08 2003-01-30 So Hock C. Multi-bit-per-cell flash EEPROM memory with refresh

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980022518A (en) * 1996-09-23 1998-07-06 김광호 Nonvolatile Semiconductor Memory Device
US6212654B1 (en) * 1997-07-22 2001-04-03 Lucent Technologies Inc. Coded modulation for digital storage in analog memory devices
US20030021149A1 (en) * 1997-09-08 2003-01-30 So Hock C. Multi-bit-per-cell flash EEPROM memory with refresh
US6094368A (en) * 1999-03-04 2000-07-25 Invox Technology Auto-tracking write and read processes for multi-bit-per-cell non-volatile memories

Also Published As

Publication number Publication date
WO2010111589A2 (en) 2010-09-30

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