WO2010104556A2 - Power latch - Google Patents

Power latch Download PDF

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Publication number
WO2010104556A2
WO2010104556A2 PCT/US2010/000655 US2010000655W WO2010104556A2 WO 2010104556 A2 WO2010104556 A2 WO 2010104556A2 US 2010000655 W US2010000655 W US 2010000655W WO 2010104556 A2 WO2010104556 A2 WO 2010104556A2
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WO
WIPO (PCT)
Prior art keywords
power supply
transistor
inverter
drain
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/000655
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French (fr)
Other versions
WO2010104556A3 (en
Inventor
Roy L. Yarbrough
Julie Stultz
Steven M. Macaluso
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Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201080011361.6A priority Critical patent/CN102349236B/en
Publication of WO2010104556A2 publication Critical patent/WO2010104556A2/en
Publication of WO2010104556A3 publication Critical patent/WO2010104556A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits

Definitions

  • the present invention relates to selecting between two power supplies, in particular to selecting the higher (or the lower) power supply while using no standby current and incurring no additional voltage drops.
  • FIG. 1 illustrates a prior art cross couple MOS transistor circuit that connects the higher of two power supplies, Vl and V2, to the Vout.
  • Vl is +3.6V
  • V2 is
  • Vgs is 1.8V and if that exceeds the threshold of Ml it is on and M2 is off. Vout will be about +3.6V. IfVl falls enough such that the Vgs of M2 turns on M2, then V2, +1.8V, will be connected via M2 to Vout. Here Ml will be off.
  • Ml and M2 are both at +1.8 V, neither Mi 's nor M2's Vgs threshold are met and both Ml and M2 are off.
  • Ml and M2 can be constructed with their N wells connected to their sources thereby producing a "body diode" that are shown as Dl and D2.
  • body diodes may be used. With the body diodes present the Vout will be one diode drop below the higher of Vl and V2. IfVl and V2 are both about +1.8V, Vout will be about +1.1V.
  • connection is defined broadly to include substantially passive components interposed between the points being “connected.”
  • the present invention provides for a circuit that selects the higher or the lower of two power supplies, wherein the unselected power supply draws no stand-by current.
  • the two power supplies are near same voltage, one of the MOS transistor is fully on providing a full supply voltage to the output.
  • the present invention provides additional inverters that fully turns on one of two MOS transistors even when the two supplies output the same voltage.
  • the transistor that is driving the output voltage will have the highest Vgs voltage possible. That is this transistor is fully on (in contrast to the prior art) even when the two power supplies are at or near the same output voltage.
  • cross coupled inverters one powered by one power supply and the other powered by the other power supply, drive the output transistors.
  • the cross coupled inverters will provide a the largest turn on voltage to one of the output transistors while keeping the other off with the largest turn off voltage possible.
  • This operation of the inverters provides for outputting the full power supply via an on transistor even when the two power supplies are at the same voltage. There will be no body diode drop as in the prior art. It will be appreciated by those skilled in the art that although the following
  • FIG. 1 is a schematic of a prior art circuit that selects the higher of two voltage supplies
  • FIG. 2 is a schematic embodying the present invention
  • FIG. 3 A is a chart illustrating the operation of the prior art circuit of FIG. 1 ;
  • FIG. 3B is a chart of the operation of an embodiment of the present invention..
  • FIG. 2 includes the M3 and M4 cross coupled MOS transistors similar to Ml and M2 of FIG. 1, but the N- well is connected (not shown) to the drain instead of the source of the transistors M3 and M4, thereby disabling the "body diodes.”
  • FIG. 2 also adds inverters, INVl and INV2, and transistors M5 and M6.
  • Vl is +3.6V and V2 is +1.8V.
  • M3 is on and M4 is off, point A is at +3.6V, point B is ground via INVl .
  • Point B at ground drive M5 fully on providing +3.6 V to Vout. Note that INVl is powered by +1.8 V and INV2 is powered by +3.6 V, but still B will be driven to ground.
  • M3 and M4 will both be off, but INVl and INV2 form cross coupled inverters, both powered by +1.8V and ground, they will latch each other and maintain transistor M5 on and +1.8V is provided to Vout. IfVl continues lowered M4 will turn on and reset the inverter latch. In the instance with M4 on, point B rises and point A falls turning on M6. The +1.8V from V2 will be supplied to Vout through M6.
  • FIG. 3A and 3B show two traces as Vl sweeps from +3.8V to +1.8V and then back to +3.8V.
  • FIG. 3 A illustrates Vl and Vout of the prior art circuit of FIG. 1. At point C Vout starts to diverge from Vl as Ml starts to turn off, and when Vl is at +1.8V, Vout is a full diode drop lower at point D. Compare this to FIG. 3B traces. Note that as Vl sweeps down to +1.8V, Vout stays right with Vl, there is no extra diode drop.
  • bipolar and hybrid transistors may be used in place of the MOS transistors shown herein. Control and other voltages levels will change, but the configuration and results will be similar. For these other transistor types, MOS gates become bases, drains become collectors, and sources become emitters. It should be understood that above-described embodiments are being presented herein as examples and that many variations and alternatives thereof are possible. Accordingly, the present invention should be viewed broadly as being defined only as set forth in the hereinafter appended claims.

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  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

A circuit that automatically, seamlessly connects the higher (or the lower) of two power supplies to an output is described. The circuit does not incur a one diode drop when the two power supplies are at about the same voltage levels, and the unused power supply draws no stand-by current. Cross coupled transistor and cross coupled inverters are employed.

Description

POWER LATCH
BACKGROUND OF THE INVENTION
Field of the Invention
The present invention relates to selecting between two power supplies, in particular to selecting the higher (or the lower) power supply while using no standby current and incurring no additional voltage drops.
Background Information
Electronic systems often require back up power supplies where, when a primary system voltage fail, a back up supply is automatically, seamlessly switched in to power the system.
There are examples of prior art where others have developed automatic selection circuits that will select the higher of two power supplies. One problem with the prior art selection circuits, where the back-up is a battery supply, is that there often is a current drain from the battery prior to being switched in that will shorten its life. Other prior art systems have limitations when two power supply voltages are within the threshold voltage, Vt, of switching transistor devices, typically MOS devices, that are used to connect one supply to an output. When this occurs, neither transistor is on. Usually, a diode drop will be employed to maintain a voltage at the output equal to the higher voltage less the diode drop. Moreover, the difference between the two power supplies is the Vgs of the on
MOS transistor. As the two power supplies come closer in voltage the Vgs of the on MOS transistor becomes marginal, not fully turned on, and the output voltage is lowered accordingly.
FIG. 1 illustrates a prior art cross couple MOS transistor circuit that connects the higher of two power supplies, Vl and V2, to the Vout. Here Vl is +3.6V and V2 is
+1.8V. Mi's Vgs is 1.8V and if that exceeds the threshold of Ml it is on and M2 is off. Vout will be about +3.6V. IfVl falls enough such that the Vgs of M2 turns on M2, then V2, +1.8V, will be connected via M2 to Vout. Here Ml will be off.
In the case where Ml and M2 are both at +1.8 V, neither Mi 's nor M2's Vgs threshold are met and both Ml and M2 are off. In some applications Ml and M2 can be constructed with their N wells connected to their sources thereby producing a "body diode" that are shown as Dl and D2. In other embodiments external diodes may be used. With the body diodes present the Vout will be one diode drop below the higher of Vl and V2. IfVl and V2 are both about +1.8V, Vout will be about +1.1V.
Herein "connected" is defined broadly to include substantially passive components interposed between the points being "connected."
In other systems, it may be convenient to automatically select the lower of power supplies to power a system. Due to use of several different integrated circuitry technologies, several different power supplies may be in use within one system. In such systems it may be convenient to automatically select he lower of the power supplies, Such a selection may apply where the power consumption of a system is lowered, for example, when the system in placed into a hibernate or other such low powered state. ϋ.S. Patent No. 7,298,181 B2 to Khan et al. describes a circuit that outputs the higher of two power supply voltages. A comparator receives both supplies and output a signal that, via an inverter, turns on one MOS transistor, and another off, connecting the higher voltage to an output. The comparator is powered from both power supplies and always draws current..
Some limitations of the prior art are addressed by the present invention.
SUMMARY OF THE INVENTION
The present invention provides for a circuit that selects the higher or the lower of two power supplies, wherein the unselected power supply draws no stand-by current. When the two power supplies are near same voltage, one of the MOS transistor is fully on providing a full supply voltage to the output.
In one embodiment, the present invention provides additional inverters that fully turns on one of two MOS transistors even when the two supplies output the same voltage. In an embodiment, the transistor that is driving the output voltage will have the highest Vgs voltage possible. That is this transistor is fully on (in contrast to the prior art) even when the two power supplies are at or near the same output voltage.
Illustratively, cross coupled inverters, one powered by one power supply and the other powered by the other power supply, drive the output transistors. The cross coupled inverters will provide a the largest turn on voltage to one of the output transistors while keeping the other off with the largest turn off voltage possible. This operation of the inverters provides for outputting the full power supply via an on transistor even when the two power supplies are at the same voltage. There will be no body diode drop as in the prior art. It will be appreciated by those skilled in the art that although the following
Detailed Description will proceed with reference being made to illustrative embodiments, the drawings, and methods of use, the present invention is not intended to be limited to these embodiments and methods of use. Rather, the present invention is of broad scope and is intended to be defined as only set forth in the accompanying claims.
BRIEF DESCRIPTION OF THE DRAWINGS
The invention description below refers to the accompanying drawings, of which: FIG. 1 is a schematic of a prior art circuit that selects the higher of two voltage supplies;
FIG. 2 is a schematic embodying the present invention;; FIG. 3 A is a chart illustrating the operation of the prior art circuit of FIG. 1 ; and
FIG. 3B is a chart of the operation of an embodiment of the present invention..
DETAILED DESCRIPTION OF AN ILLUSTRATIVE
EMBODIMENT
FIG. 2 includes the M3 and M4 cross coupled MOS transistors similar to Ml and M2 of FIG. 1, but the N- well is connected (not shown) to the drain instead of the source of the transistors M3 and M4, thereby disabling the "body diodes." FIG. 2 also adds inverters, INVl and INV2, and transistors M5 and M6.
In the circuit as shown, Vl is +3.6V and V2 is +1.8V. M3 is on and M4 is off, point A is at +3.6V, point B is ground via INVl . Point B at ground drive M5 fully on providing +3.6 V to Vout. Note that INVl is powered by +1.8 V and INV2 is powered by +3.6 V, but still B will be driven to ground.
IfVl drops to +1.8V (where Ml and M2 were both off in FIG. 1) M3 and M4 will both be off, but INVl and INV2 form cross coupled inverters, both powered by +1.8V and ground, they will latch each other and maintain transistor M5 on and +1.8V is provided to Vout. IfVl continues lowered M4 will turn on and reset the inverter latch. In the instance with M4 on, point B rises and point A falls turning on M6. The +1.8V from V2 will be supplied to Vout through M6.
By changing the source contact of M5, M6, INVl and INV2 to the other power supply, the lower of the two power supplies, Vl and V2, will be presented to Vout.
FIG. 3A and 3B show two traces as Vl sweeps from +3.8V to +1.8V and then back to +3.8V. FIG. 3 A illustrates Vl and Vout of the prior art circuit of FIG. 1. At point C Vout starts to diverge from Vl as Ml starts to turn off, and when Vl is at +1.8V, Vout is a full diode drop lower at point D. Compare this to FIG. 3B traces. Note that as Vl sweeps down to +1.8V, Vout stays right with Vl, there is no extra diode drop.
Although not shown directly, bipolar and hybrid transistors may be used in place of the MOS transistors shown herein. Control and other voltages levels will change, but the configuration and results will be similar. For these other transistor types, MOS gates become bases, drains become collectors, and sources become emitters. It should be understood that above-described embodiments are being presented herein as examples and that many variations and alternatives thereof are possible. Accordingly, the present invention should be viewed broadly as being defined only as set forth in the hereinafter appended claims.
What is claimed is:

Claims

CLAIMS 1. A circuit that connects the higher voltage of two power supplies to an output, the circuit comprising: a first transistor with its source connected to a first power supply and its gate to a second power supply; a second transistor with its source connected to the second power supply and its gate to the first power supply; cross coupled first and second inverters, the first inverter input connected to the first transistor drain and the second inverter input connected to the second transistor drain; the first inverter powered by the second power supply and the second inverter powered by the first power supply; the input of the first inverter connected to the output of the second inverter, and the input of the second inverter connected to the output of the first inverter; a third transistor with its gate connected to the drain of the second transistor, its source connected to the first power supply and its drain connected to the output voltage; and a fourth transistor with its gate connected to the first transistor drain, its source connected to the second power supply and its drain connected to the output.
2. The circuit of claim 1 , where the power supply connections from the third and the fourth transistors are switched and the power supply connections of the first and second inverters are switched, wherein the circuit now outputs the lower of the two power supplies rather than the higher.
3. A method for connecting the higher of two power supplies to an output voltage, the method comprising: connecting a first transistor source to a first power supply and its gate to a second power supply; connecting a second transistor source to the second power supply and its gate to the first power supply; cross-coupling first and second inverters, the first inverter input connected to the first transistor drain and the second inverter input connected to the second transistor drain; the first inverter powered by the second power supply and the second inverter powered by the first power supply; the input of the first inverter connected to the output of the second inverter, and the input of the second inverter connected to the output of the first inverter; connecting a third transistor gate to the drain of the second transistor, its source connected to the first power supply and its drain connected to the output voltage; and connecting a fourth transistor gate to the first transistor drain, its source connected to the second power supply and its drain connected to the output voltage.
4. The method of claim 3, switching the power supply connections of the third and the fourth transistors and the power supply connections of the first and second inverters, wherein the circuit now outputs the lower of the two power supplies rather than the higher.
PCT/US2010/000655 2009-03-13 2010-03-04 Power latch Ceased WO2010104556A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201080011361.6A CN102349236B (en) 2009-03-13 2010-03-04 Power latch

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/403,490 US7893566B2 (en) 2009-03-13 2009-03-13 Power latch
US12/403,490 2009-03-13

Publications (2)

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WO2010104556A2 true WO2010104556A2 (en) 2010-09-16
WO2010104556A3 WO2010104556A3 (en) 2010-12-29

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US (1) US7893566B2 (en)
KR (1) KR20110136854A (en)
CN (1) CN102349236B (en)
TW (1) TW201117558A (en)
WO (1) WO2010104556A2 (en)

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CN106656164A (en) * 2016-11-16 2017-05-10 上海艾为电子技术股份有限公司 High-level selection circuit and electronic system
CN107681768A (en) * 2017-11-01 2018-02-09 浙江工业大学 A kind of high power selection circuit being easily integrated
US10642294B1 (en) * 2018-12-19 2020-05-05 Nxp B.V. Voltage select circuit
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Also Published As

Publication number Publication date
US20100231051A1 (en) 2010-09-16
TW201117558A (en) 2011-05-16
CN102349236B (en) 2014-08-06
US7893566B2 (en) 2011-02-22
CN102349236A (en) 2012-02-08
KR20110136854A (en) 2011-12-21
WO2010104556A3 (en) 2010-12-29

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