WO2010091311A2 - Sonde afm à nanofil pour l'imagerie de matériaux souples - Google Patents

Sonde afm à nanofil pour l'imagerie de matériaux souples Download PDF

Info

Publication number
WO2010091311A2
WO2010091311A2 PCT/US2010/023407 US2010023407W WO2010091311A2 WO 2010091311 A2 WO2010091311 A2 WO 2010091311A2 US 2010023407 W US2010023407 W US 2010023407W WO 2010091311 A2 WO2010091311 A2 WO 2010091311A2
Authority
WO
WIPO (PCT)
Prior art keywords
nanowire
afm
scattered light
interest
target
Prior art date
Application number
PCT/US2010/023407
Other languages
English (en)
Other versions
WO2010091311A3 (fr
Inventor
Paul D. Ashby
James P. Schuck
Shaul Aloni
Babak Sanii
Original Assignee
The Regents Of The University Of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Regents Of The University Of California filed Critical The Regents Of The University Of California
Publication of WO2010091311A2 publication Critical patent/WO2010091311A2/fr
Publication of WO2010091311A3 publication Critical patent/WO2010091311A3/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/08—Probe characteristics
    • G01Q70/10—Shape or taper
    • G01Q70/12—Nanotube tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q20/00—Monitoring the movement or position of the probe
    • G01Q20/02—Monitoring the movement or position of the probe by optical means

Definitions

  • the present invention is in the field of atomic force microscopy.
  • Examples of this work include the imaging the structure of cellulose fibrils in the plant cell wall to enable the creation of degradation mechanisms facilitating the production of bio fuels, or the imaging of protein crystals in the coats of bacterial spores and their change in morphology upon rehydration and germination.
  • AFM images of supported membranes from destroyed cells reveal the structure and organization of proteins in fine detail. Individual domains of each light harvesting complex in a chloroplast are resolvable along with other examples like ATPases in the mitochondria and rhodopsins in the retina.
  • the AFM is able to measure material properties of a surface (topography, magnetism, specific chemical interactions, etc.) with high spatial resolution by sensing the force the surface applies to the instrument.
  • the present invention provides for a device comprising a support and a nanowire attached to the support designed for use with an atomic force microscope (AFM).
  • the nanowire is a cantilever of the AFM.
  • the present invention also provides for an AFM comprising the device of the present invention.
  • the nanowire When in uses, the nanowire is presented perpendicular to the sample surface (shear-mode). When in use, the nanowire is at times in contact with target of interest, wherein the target is soft, such as a living or viable cell or a gel. When in use, the nanowire is at times in the beamwaist of a focused laser beam. When in use, at times, the resulting scatter pattern of the focused laser beam on the nanowire is incident upon a split-photodiode. The split-photodiode detects change in oscillation frequency/amplitude of the nanowire, which corresponds to a signal on the split-photodiode. In some embodiments, when the target is a living or viable cell, the target is in a liquid, such as a solution.
  • the present invention also provides for a method of using an AFM comprising a device of the present invention, comprising observing a target of interest that is soft, such as a living or viable cell or a gel.
  • Figure 1 shows an embodiment of the invention.
  • Figure 2 shows an embodiment of the invention.
  • Figure 3 shows an embodiment of the invention fabricated from VLS silicon nanowire growth.
  • Figure 4 shows the calculated thermal force noise for a device of the invention.
  • the device of the invention has significantly less force noise which will enable imaging of soft materials.
  • Panel A shows the theoretical difference signal from a split- photodiode when a conductive, 152 nm radius nanowire passes through a 532 nm wavelength Gaussian laser with a 1 ⁇ m spotsize, in air. Both the polarization and the photodiode-split are oriented along the length of the nanowire.
  • Panel B shows the images of the near- field absolute electric field, with the beam propagating from left to right.
  • Figure 6 shows the theoretical sensitivity plot showing its dependence on the nanowire's radius and laser spot size. This analysis is for a 633 nm laser, with the polarization along the axis of the nanowire, in air.
  • Figure 7 shows the split-photodiode signal measured from the setup described in Example 2.
  • Figure 8 shows the measurement of the spectrum of the nanowire's thermal fluctuation from the setup described in Example 2. Based on the dimensions and material properties of the cantilever in air, one expects a resonant frequency of 37.5 kHz and a Q of 4.42. ONe measures a frequency of 36.6 kHz and a Q of 2.4. The discrepancy in Q is being investigated and in particular whether it is due to internal losses in the nanowire that are not modeled. The fit DC thermal noise is 0.1 A/VHZ.
  • Figure 9 shows the Mie scatter analysis.
  • Figure 10 shows a process for producing Ag 2 Ga nanowires.
  • an and “the” include plural referents unless the context clearly dictates otherwise.
  • reference to a "target of interest” includes a single target of interest as well as a plurality of targets of interest.
  • the present invention makes it possible to measure the position of a nanowire with high precision.
  • the nanowire can be used as an AFM spring which would reduce the force between the surface and spring.
  • the measurement of position is performed by putting the nanowire in the beamwaist of a focused laser beam.
  • the nanowire will scatter the laser light differently depending upon the position of the nanowire within the beamwaist.
  • the differences in the scattered light can be measured as intensity changes on a position sensitive photodiode (quadrant photodiode).
  • This detection mechanism is similar to that used for measuring the position of beads in laser tweezers but applied to cantilevers used in AFM.
  • the photodiode is configured such that it gathers the forward scattered light along with the non-scattered light.
  • the scattered light is perpendicular to the beam axis so that it does not have the background signal of the non- scattered light.
  • the nanowire can further comprise a luminescent element, such as a quantum dot, for example at the end of the nanowire, so that a shift the color of the detected light would indicate detection of the quantum dot.
  • the nanowire can further comprise a molecule, such as an antibody, capable of specifically binding a target molecule at high affinity.
  • the device of the present invention can be constructed from epitaxially grown silicon nanowires and uses interference of forward scattered light as the detection mechanism.
  • VLS silicon nanowire growth provides a convenient, high yielding, and reproducible method for fabricating nanoscale cantilevers.
  • the width and length of silicon nanowires are tuned easily by controlling the size of the initial catalyst particle and growth conditions.
  • growth is epitaxial with predictable orientations. Nanowires of diameter larger than 20nm grow in the ⁇ 111> direction. Conveniently, the growth direction of nanowires with diameters less than 20nm switches to ⁇ 110> which is perpendicular to the ⁇ 111> direction.
  • FIG. 3 An embodiment of a device of the present invention is shown in Figure 3.
  • the detection mechanism for optical tweezers similarly uses interference between forward scattered light and the non-scattered beam to achieve 1 pm/rtHz baseline noise.
  • the high index of refraction and large scattering cross section for the gold catalyst particle at the end of the wire will increase the sensitivity 100 times over typical laser tweezers measurements allowing the use of much smaller diameters.
  • the significant reduction in the dimensions of the cantilever leads to an enormous decrease in the force noise associated with thermal excitation (Figure 4).
  • the device of the present invention provides the opportunity to probe soft materials significantly more gently than the smallest AFM probes currently being utilized.
  • the nanowire size can be of any suitable size. Such a size can be at least 5 or
  • the size can be up to 55, 100, 200, 300, 400, or 500 nm in diameter and/or up to 1.5, 10, 50, or 100 ⁇ m in length.
  • the size can be from 10 nm in diameter to 500 nm in diameter and/or from 300 nm in length to 100 ⁇ m in length.
  • the size can be from 10 nm in diameter to 55 nm in diameter and/or from 300 nm in length to 1.5 ⁇ m in length.
  • the cross-sectional symmetry can be circular or any of the faceted growth patterns such as trigonal, square, rectangular, hexagonal, octagonal, or the like.
  • the nanowire can comprise of any suitable material, such as a metal, semiconductors, insulator, or the like.
  • Suitable metals include gold, silver, silver gallium alloy, and iron.
  • Suitable semiconductors include silicon, germanium, gallium arsenide, gallium phosphide, Indium Arsenide, Indium Phosphide, Zinc Sulfide, Zinc Selenide, Zinc Telluride, Cadmium Sulfide, and Cadmium Selenide.
  • Suitable insulators include glass- siliconoxide, Quartz, and aluminumoxide.
  • the nanowire cantilever must be supported on a support, such as a relatively stiff base.
  • the method of attaching the nanowire to the support can vary.
  • the nanowire can be grown from the support using nanowire growth mechanisms such as laser ablation, VLS (vapor-liquid-solid), chemical vapor deposition.
  • VLS vapor-liquid-solid
  • SLS solution-liquid-solid
  • assembly from colloidal nanocrystals can be used to make independent nanowires that are then mounted to a support.
  • the method comprises collecting the forward scattered light with the non-scattered light and measuring the spatial shift in intensity of the scattered light as the cantilever is deflected using a position sensitive photodiode (quadrant detector).
  • a position sensitive photodiode quadrant detector
  • the method comprises providing the collection optics perpendicular to the axis of the acceptation optics and collecting the wide angle scattered light and none of the non-scattered light.
  • the method comprises collecting the total light intensity of the forward scattered and non-scattered light. This is a method of measuring the wide angle scattered light as a reduction in the total light intensity in the forward direction.
  • a nanowire that has a special scattering center.
  • Metal scatters better than dielectrics Some example of this type of wire may be a silicon semiconducting nanowire which has a gold particle at the end.
  • the special scattering center may be a luminescent material which emits photons in a different color than the excitation beam. Such that filters can be used to remove the non-scattered light. Since the direct bandgap semiconductors are highly luminescent, the whole wire can be used as a different color scattering center.
  • Interference and intensity are intimately related. Both methods measure intensity but interference influences the intensity pattern on the detector which can be harnessed for higher sensitivity.
  • scattering intensity scattered light perpendicular to the beam propagation is gathered so that there is backgroundless detection.
  • scattering interference interference between the scattered and unscattered light is measured, and it utilizes stronger forward scattering intensity.
  • Mie scattering is a theoretical model we use to help us guide parameter selection for nanowire fabrication. It is not part of the invention. Mie scattering analysis is described in Example 1.
  • the invention can be applied in the investigation of protein function, with the ultimate goal of manipulating the cellular machinery, by gently imaging the cell with scanned probe microscopy.
  • engineered protein structures offer enormous potential as a new material because of their great versatility.
  • proteins of interest include proteins involved in cell adhesion, motility, and proliferation, such as large membrane spanning proteins, for example integrins. Because of their crucial role in cell adhesion and signaling, understanding these basic functions would potentially provide the key to the future use of protein machinery in the selective assembly of nanostructures.
  • proteins of interest include proteins found on the surface of cell membranes.
  • the AFM of the present invention is the only imaging technology which can image intact cell surfaces with nanometer scale resolution. High resolution images provided by AFM of the present invention can uniquely address a number of outstanding and pressing questions related to protein function and signaling.
  • ni Medium ref. index a: Nanowire radius n 2 : Nanowire ref. index ⁇ : Laser wavelength ⁇ : Focussed spot- size y 0 : Lateral displacement z 0 : Axial displacement n: Number of terms
  • the transmission-detection scheme is validated by translating the nanowire through the laser focus with a nanopositioniong flexure stage.
  • the resulting split-photodiode signal reveals a functionally odd profile characteristic of the numerical simulations (see Figure 7).
  • the spectrum of the nanowire 's thermal fluctuations can be measured (see Figure 8).
  • the laser polarization is set by rotating tight loops of the single-mode fiber. It is subsequently focused onto the nanowire, which is attached to a nano-positioning flexure stage. As the nanowire is translated through the beam the transmitted light is measured by a split-photodiode directly beneath the base-plate.
  • a variety of methods are available to create nano wires, including focussed ion beam etching, vapor-liquid-solid (VLS) growth and Ag 2 Ga alloy pulling.
  • the Ag 2 Ga nanowires are suitable for use in the present invention due to their growth eometry and their commercial availability (from NaugaNeedles LLC, Louisville, KY).
  • NaugaNeedle Ag 2 Ga nanowires are made by pulling silver-coated AFM tips from gallium droplets using a method adapted from M.M. Yazdanpanah et al, "Selective self-assembly at room temperature of individual freestanding Ag 2 Ga alloy nanoneedles," J. Appl. Phys. 98, 2005, hereby incorporated by reference. See Figue 10.

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

L'invention concerne un dispositif comprenant un support et un nanofil fixé au support, le dispositif étant conçu pour être utilisé avec un microscope à force atomique (AFM).
PCT/US2010/023407 2009-02-05 2010-02-05 Sonde afm à nanofil pour l'imagerie de matériaux souples WO2010091311A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15030709P 2009-02-05 2009-02-05
US61/150,307 2009-02-05

Publications (2)

Publication Number Publication Date
WO2010091311A2 true WO2010091311A2 (fr) 2010-08-12
WO2010091311A3 WO2010091311A3 (fr) 2010-09-30

Family

ID=42542671

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/023407 WO2010091311A2 (fr) 2009-02-05 2010-02-05 Sonde afm à nanofil pour l'imagerie de matériaux souples

Country Status (1)

Country Link
WO (1) WO2010091311A2 (fr)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070163335A1 (en) * 2002-07-02 2007-07-19 Lin Huang Method and apparatus for measuring electrical properties in torsional resonance mode
US20070221840A1 (en) * 2006-03-23 2007-09-27 International Business Machines Corporation Monolithic high aspect ratio nano-size scanning probe microscope (SPM) tip formed by nanowire growth
US20070228439A1 (en) * 2002-09-30 2007-10-04 Nanosys, Inc. Large-Area Nanoenabled Macroelectronic Substrates and Uses Therefor
US20080061231A1 (en) * 2006-04-28 2008-03-13 Chamberlin Danielle R Nanowire scanning probe microscopy probe for molecular recognition imaging
US20080283773A1 (en) * 2000-09-06 2008-11-20 Guava Technologies, Inc. Particle or Cell Analyzer and Method
US20090000364A1 (en) * 2007-02-20 2009-01-01 Min-Feng Yu Electrochemical deposition platform for nanostructure fabrication
US20090056428A1 (en) * 2007-08-28 2009-03-05 King William P Cantilever probe and applications of the same
US20090321261A1 (en) * 2005-04-15 2009-12-31 Dr. Branislav Vlahovic Detection methods and detection devices based on the quantum confinement effects

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080283773A1 (en) * 2000-09-06 2008-11-20 Guava Technologies, Inc. Particle or Cell Analyzer and Method
US20070163335A1 (en) * 2002-07-02 2007-07-19 Lin Huang Method and apparatus for measuring electrical properties in torsional resonance mode
US20070228439A1 (en) * 2002-09-30 2007-10-04 Nanosys, Inc. Large-Area Nanoenabled Macroelectronic Substrates and Uses Therefor
US20090321261A1 (en) * 2005-04-15 2009-12-31 Dr. Branislav Vlahovic Detection methods and detection devices based on the quantum confinement effects
US20070221840A1 (en) * 2006-03-23 2007-09-27 International Business Machines Corporation Monolithic high aspect ratio nano-size scanning probe microscope (SPM) tip formed by nanowire growth
US20080061231A1 (en) * 2006-04-28 2008-03-13 Chamberlin Danielle R Nanowire scanning probe microscopy probe for molecular recognition imaging
US20090000364A1 (en) * 2007-02-20 2009-01-01 Min-Feng Yu Electrochemical deposition platform for nanostructure fabrication
US20090056428A1 (en) * 2007-08-28 2009-03-05 King William P Cantilever probe and applications of the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
13IEDERMANN, LAURA B ET AL.: 'Flexural vibration spectra of carbon nanotubes measured using laser Doppler vibrometry.' NANOTECHNOLOGY, [Online] vol. 20, no. 6PP, January 2009, page 035702 Retrieved from the Internet: <URL:http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1378&context=nanopub> [retrieved on 2010-06-30] *

Also Published As

Publication number Publication date
WO2010091311A3 (fr) 2010-09-30

Similar Documents

Publication Publication Date Title
Payton et al. High-speed atomic force microscopy for materials science
Morris et al. Atomic force microscopy for biologists
Ando et al. High‐speed atomic force microscopy for observing dynamic biomolecular processes
Radmacher Measuring the elastic properties of biological samples with the AFM
Pfreundschuh et al. Multiparametric high-resolution imaging of native proteins by force-distance curve–based AFM
US7525088B2 (en) Optically controllable device
Siedlecki et al. Atomic force microscopy for characterization of the biomaterial interface
Sanii et al. High sensitivity deflection detection of nanowires
Chyasnavichyus et al. Recent advances in micromechanical characterization of polymer, biomaterial, and cell surfaces with atomic force microscopy
US20100257643A1 (en) Ultrasoft atomic force microscopy device and method
US6995367B2 (en) Nanotube, near-field light detecting apparatus and near-field light detecting method
Tararam et al. Atomic force microscopy: A powerful tool for electrical characterization
Benítez et al. Applications and potentialities of Atomic Force Microscopy in fossil and extant plant cuticle characterization
Plodinec et al. Atomic force microscopy for biological imaging and mechanical testing across length scales
SE531775C2 (sv) Anordning och komponent för parallell detektion i realtid av individuella nanomekaniska rörelser hos en samling/array av individuella och oberoende oscillerande balkar
Świadkowski et al. Near-zero contact force atomic force microscopy investigations using active electromagnetic cantilevers
WO2010091311A2 (fr) Sonde afm à nanofil pour l&#39;imagerie de matériaux souples
Manibog et al. Measuring force-induced dissociation kinetics of protein complexes using single-molecule atomic force microscopy
Rico et al. Force-Clamp measurements of receptor–ligand interactions
Marinello et al. Critical factors in cantilever near-field scanning optical microscopy
Cava et al. Study of amyloid fibers using atomic force microscopy
Sulania et al. Atomic and magnetic force studies of co thin films and nanoparticles: understanding the surface correlation using fractal studies
Moraille et al. Experimental methods in chemical engineering: Atomic force microscopy− AFM
Hörber Local probe techniques
EP2435829B1 (fr) Procédé d&#39;imagerie et son utilisation

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10739201

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 10739201

Country of ref document: EP

Kind code of ref document: A2