WO2010087613A3 - Method for manufacturing a cds/cdte thin film solar cell - Google Patents

Method for manufacturing a cds/cdte thin film solar cell Download PDF

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Publication number
WO2010087613A3
WO2010087613A3 PCT/KR2010/000490 KR2010000490W WO2010087613A3 WO 2010087613 A3 WO2010087613 A3 WO 2010087613A3 KR 2010000490 W KR2010000490 W KR 2010000490W WO 2010087613 A3 WO2010087613 A3 WO 2010087613A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
cdte
cds
substrate
sputtering chamber
Prior art date
Application number
PCT/KR2010/000490
Other languages
French (fr)
Korean (ko)
Other versions
WO2010087613A2 (en
Inventor
이재근
이태석
Original Assignee
Lee Jae Geun
Lee Tae Seok
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lee Jae Geun, Lee Tae Seok filed Critical Lee Jae Geun
Publication of WO2010087613A2 publication Critical patent/WO2010087613A2/en
Publication of WO2010087613A3 publication Critical patent/WO2010087613A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a method for manufacturing a CdS/CdTe thin film solar cell in an in-line, interback, or cluster system, comprising the steps of: providing a substrate; depositing a transparent conductive oxide thin film on the substrate in a first sputtering chamber; depositing a CdS thin film on the transparent conductive oxide thin film in a second sputtering chamber; depositing a CdTe thin film on the CdS thin film in a third sputtering chamber; and treating the CdTe thin film with CdCl2 in a heat treatment chamber. The third sputtering chamber is provided with a plurality of CdTe targets having lengths longer than the vertical length of the substrate and arranged beneath the substrate. The deposition of the CdTe thin film is performed through sputtering for supplying overlapped RF/DC power to the plurality of CdTe targets. Thus, the method of the present invention improves the productivity of large area CdS/CdTe thin film solar cells, and can be used to obtain a dense thin film at a low processing temperature.
PCT/KR2010/000490 2009-01-28 2010-01-27 Method for manufacturing a cds/cdte thin film solar cell WO2010087613A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090006640A KR100936487B1 (en) 2009-01-28 2009-01-28 Manufacturing method of cds/cdte thin film solar cells
KR10-2009-0006640 2009-01-28

Publications (2)

Publication Number Publication Date
WO2010087613A2 WO2010087613A2 (en) 2010-08-05
WO2010087613A3 true WO2010087613A3 (en) 2010-11-04

Family

ID=41809705

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/000490 WO2010087613A2 (en) 2009-01-28 2010-01-27 Method for manufacturing a cds/cdte thin film solar cell

Country Status (2)

Country Link
KR (1) KR100936487B1 (en)
WO (1) WO2010087613A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101220006B1 (en) * 2011-04-29 2013-01-21 주식회사 디엠에스 In-line type apparatus for manufacturing solar cell and Solar cell manufactured by the same
KR101222879B1 (en) * 2011-05-16 2013-01-18 주식회사 제이몬 Gas injection type cracker
KR101829970B1 (en) 2016-02-01 2018-02-19 연세대학교 산학협력단 OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR and METHOD FOR MANUFACTURING OF THE SAME

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6169246B1 (en) * 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
US6548751B2 (en) * 2000-12-12 2003-04-15 Solarflex Technologies, Inc. Thin film flexible solar cell
US7211462B2 (en) * 2001-10-05 2007-05-01 Solar Systems & Equipments S.R.L. Process for large-scale production of CdTe/CdS thin film solar cells

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101467263A (en) * 2006-04-18 2009-06-24 道康宁公司 Cadmium telluride-based photovoltaic device and method of preparing the same
KR20090006755A (en) * 2007-07-12 2009-01-15 어플라이드 머티어리얼스, 인코포레이티드 Method for the production of a transparent conductive oxide coating

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6169246B1 (en) * 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
US6548751B2 (en) * 2000-12-12 2003-04-15 Solarflex Technologies, Inc. Thin film flexible solar cell
US7211462B2 (en) * 2001-10-05 2007-05-01 Solar Systems & Equipments S.R.L. Process for large-scale production of CdTe/CdS thin film solar cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
R. WENDT ET AL.: "Improvement of CdTe solar cell performance with discharge control during film deposition by magnetron sputtering", J. OF APPL. PHYS., vol. 84, no. 5, 1 September 1998 (1998-09-01), pages 2920 - 2925 *

Also Published As

Publication number Publication date
KR100936487B1 (en) 2010-01-13
WO2010087613A2 (en) 2010-08-05

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