WO2010080008A3 - Group iii nitride semiconductor light emitting device - Google Patents

Group iii nitride semiconductor light emitting device Download PDF

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Publication number
WO2010080008A3
WO2010080008A3 PCT/KR2010/000165 KR2010000165W WO2010080008A3 WO 2010080008 A3 WO2010080008 A3 WO 2010080008A3 KR 2010000165 W KR2010000165 W KR 2010000165W WO 2010080008 A3 WO2010080008 A3 WO 2010080008A3
Authority
WO
WIPO (PCT)
Prior art keywords
group iii
iii nitride
nitride semiconductor
light emitting
emitting device
Prior art date
Application number
PCT/KR2010/000165
Other languages
French (fr)
Korean (ko)
Other versions
WO2010080008A2 (en
Inventor
구분회
안도열
박승환
Original Assignee
우리엘에스티 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 우리엘에스티 주식회사 filed Critical 우리엘에스티 주식회사
Publication of WO2010080008A2 publication Critical patent/WO2010080008A2/en
Publication of WO2010080008A3 publication Critical patent/WO2010080008A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

The present disclosure relates to a group III nitride semiconductor light emitting device comprising an n-type group III nitride semiconductor layer, a p-type group III nitride semiconductor layer, and an active layer interposed between the two semiconductor layers to generate light by the re-combination of electrons and holes, wherein said active layer includes a quantum well layer having a first energy band gap, and a wave function localization guide layer which has a second energy band gap smaller than the first energy band gap, and is disposed within the quantum well layer.
PCT/KR2010/000165 2009-01-09 2010-01-11 Group iii nitride semiconductor light emitting device WO2010080008A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090001740A KR101053799B1 (en) 2009-01-09 2009-01-09 Nitride-based light emitting device
KR10-2009-0001740 2009-01-09

Publications (2)

Publication Number Publication Date
WO2010080008A2 WO2010080008A2 (en) 2010-07-15
WO2010080008A3 true WO2010080008A3 (en) 2010-09-23

Family

ID=42317020

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/000165 WO2010080008A2 (en) 2009-01-09 2010-01-11 Group iii nitride semiconductor light emitting device

Country Status (2)

Country Link
KR (1) KR101053799B1 (en)
WO (1) WO2010080008A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234545A (en) * 2002-02-07 2003-08-22 Sanyo Electric Co Ltd Semiconductor light emitting element
US7115908B2 (en) * 2004-01-30 2006-10-03 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced polarization fields
KR100780212B1 (en) * 2006-03-30 2007-11-27 삼성전기주식회사 Nitride semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234545A (en) * 2002-02-07 2003-08-22 Sanyo Electric Co Ltd Semiconductor light emitting element
US7115908B2 (en) * 2004-01-30 2006-10-03 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced polarization fields
KR100780212B1 (en) * 2006-03-30 2007-11-27 삼성전기주식회사 Nitride semiconductor device

Also Published As

Publication number Publication date
WO2010080008A2 (en) 2010-07-15
KR20100082429A (en) 2010-07-19
KR101053799B1 (en) 2011-08-03

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