WO2010079881A3 - 자벽이동 기억 장치 및 그 동작 방법 - Google Patents

자벽이동 기억 장치 및 그 동작 방법 Download PDF

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Publication number
WO2010079881A3
WO2010079881A3 PCT/KR2009/006158 KR2009006158W WO2010079881A3 WO 2010079881 A3 WO2010079881 A3 WO 2010079881A3 KR 2009006158 W KR2009006158 W KR 2009006158W WO 2010079881 A3 WO2010079881 A3 WO 2010079881A3
Authority
WO
WIPO (PCT)
Prior art keywords
domain wall
memory device
operating method
method therefor
information storage
Prior art date
Application number
PCT/KR2009/006158
Other languages
English (en)
French (fr)
Other versions
WO2010079881A2 (ko
Inventor
유천열
Original Assignee
인하대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 인하대학교산학협력단 filed Critical 인하대학교산학협력단
Publication of WO2010079881A2 publication Critical patent/WO2010079881A2/ko
Publication of WO2010079881A3 publication Critical patent/WO2010079881A3/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

본 발명은 자벽이동 기억 장치 및 그 동작 방법을 제공한다. 이 장치는 제1 방향으로 연장되고 제1 방향으로 자화된 자벽을 가지는 정보저장패턴, 및 제1 방향을 가로지르는 제2 방향으로 연장되는 복수의 구동 패턴들을 포함한다. 정보저장패턴은 자벽과 자구들을 포함하고, 구동 패턴들은 정보저장패턴의 자벽을 정보저장패턴 내에서 이동시킬 수 있다.
PCT/KR2009/006158 2009-01-09 2009-10-23 자벽이동 기억 장치 및 그 동작 방법 WO2010079881A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090001761A KR100999975B1 (ko) 2009-01-09 2009-01-09 자벽이동 기억 장치 및 그 동작 방법
KR10-2009-0001761 2009-01-09

Publications (2)

Publication Number Publication Date
WO2010079881A2 WO2010079881A2 (ko) 2010-07-15
WO2010079881A3 true WO2010079881A3 (ko) 2010-08-26

Family

ID=42316931

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/006158 WO2010079881A2 (ko) 2009-01-09 2009-10-23 자벽이동 기억 장치 및 그 동작 방법

Country Status (2)

Country Link
KR (1) KR100999975B1 (ko)
WO (1) WO2010079881A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201117446D0 (en) 2011-10-10 2011-11-23 Univ York Method of pinning domain walls in a nanowire magnetic memory device
KR102662153B1 (ko) 2019-08-16 2024-05-03 삼성전자주식회사 자기 메모리 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237183A (ja) * 2005-02-24 2006-09-07 Internatl Business Mach Corp <Ibm> 磁気シフト・レジスタ・メモリ・デバイスにおいて用いるデータ・トラックの製造方法
JP2007096119A (ja) * 2005-09-29 2007-04-12 Sharp Corp 磁気メモリ、磁気メモリの駆動回路、磁気メモリの配線方法、および磁気メモリの駆動方法
KR20080063653A (ko) * 2007-01-02 2008-07-07 삼성전자주식회사 자구 벽 이동을 이용한 정보 저장 매체 및 그 제조 방법
KR20080101124A (ko) * 2007-05-16 2008-11-21 인하대학교 산학협력단 요크 패턴을 갖는 자벽이동 메모리 장치 및 메모리 장치의형성 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237183A (ja) * 2005-02-24 2006-09-07 Internatl Business Mach Corp <Ibm> 磁気シフト・レジスタ・メモリ・デバイスにおいて用いるデータ・トラックの製造方法
JP2007096119A (ja) * 2005-09-29 2007-04-12 Sharp Corp 磁気メモリ、磁気メモリの駆動回路、磁気メモリの配線方法、および磁気メモリの駆動方法
KR20080063653A (ko) * 2007-01-02 2008-07-07 삼성전자주식회사 자구 벽 이동을 이용한 정보 저장 매체 및 그 제조 방법
KR20080101124A (ko) * 2007-05-16 2008-11-21 인하대학교 산학협력단 요크 패턴을 갖는 자벽이동 메모리 장치 및 메모리 장치의형성 방법

Also Published As

Publication number Publication date
KR20100082445A (ko) 2010-07-19
WO2010079881A2 (ko) 2010-07-15
KR100999975B1 (ko) 2010-12-13

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