WO2010067418A1

WO2010067418A1 - Magnetic recording head, and storage device

Info

Publication number: WO2010067418A1
Application number: PCT/JP2008/072315
Authority: WO
Inventors: 恵一長坂
Original assignee: 富士通株式会社
Priority date: 2008-12-09
Filing date: 2008-12-09
Publication date: 2010-06-17

Abstract

At a main pole (45), a magnetization is established vertically or downward along a center axis (CX). If a magnetic field is generated from the inner end of a second magnetic layer (58) toward a tip (45a), for example, the divergence of a leaking magnetic field to leak from the side face of the tip (45a) is blocked. The recording magnetic field is concentrated directly downward from the leading face of the tip (45a). At the same time, the magnetic field to leak from the inner end of the second magnetic layer (58) toward the tip (45a) is superposed on a recording magnetic field. On the other hand, the leaking magnetic field to leak from the side face of the tip (45a) and from the second magnetic layer (58) toward a medium-confronting face (29) is absorbed by a first magnetic layer (56). As a result, the intensity of the recording magnetic field increases. At the same time, the generation of the leaking magnetic field, namely, an erase magnetic field from the medium-confronting face (29) toward a storage medium (14) is avoided. Moreover, a steep gradient is established in the recording magnetic field to leak from the leading end of the tip (45a).

Description

Magnetic recording head and storage device

The present invention relates to a magnetic recording head used for writing magnetic information in a storage device such as a hard disk drive (HDD).

For example, in a planar single pole head, the main pole defines a truncated pyramid-shaped tip piece. The tip surface of the tip piece faces the medium facing surface. The tip piece is sandwiched between a pair of side shields extending along the medium facing surface. The side shield absorbs an extra leakage magnetic field leaking from the tip piece. As a result, the recording magnetic field leaks intensively from the tip of the tip piece.
Japanese Unexamined Patent Publication No. 2006-31774 Japanese Unexamined Patent Publication No. 2008-21398

In such a single-pole head, as described above, an extra leakage magnetic field is absorbed by the side shield. As a result, dispersion of the recording magnetic field in the core width direction of the single pole head is avoided between the medium facing surface and the magnetic disk. However, the intensity of the recording magnetic field decreases due to the absorption of the leakage magnetic field.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a magnetic recording head and a storage device that can increase the intensity of a recording magnetic field while absorbing a leakage magnetic field.

In order to achieve the above object, a magnetic recording head is divided into tip pieces that taper toward a tip facing a medium facing surface facing a storage medium and establish magnetization along a central axis perpendicular to the medium facing surface. And a shield that extends along the medium facing surface and faces the tip piece, the shield having a first magnetization amount extending along the medium facing surface, and the central axis A first magnetic layer that establishes magnetization in a first direction orthogonal to the first magnetic layer, a nonmagnetic layer that is stacked on the surface of the first magnetic layer, and a layer that is stacked on the surface of the nonmagnetic layer and is greater than the first magnetization amount And a second magnetic layer having a second magnetization amount and establishing magnetization in a second direction antiparallel to the first direction.

In such a magnetic recording head, magnetization is established in the main pole, for example, in the vertical direction along the central axis. As a result, a recording magnetic field is formed between the medium facing surface and the storage medium. In the first magnetic layer of the shield, magnetization is established in a first direction orthogonal to the central axis. On the other hand, in the second magnetic layer, magnetization is established in a second direction antiparallel to the first direction. Since the second magnetic layer has a larger magnetization amount than the first magnetic layer, the magnetization is fixed in the second direction in the second magnetic layer.

For example, a magnetic field is generated from the inner end of the second magnetic layer toward the tip piece. As a result, the spread of the leakage magnetic field leaking from the side surface of the tip piece is prevented. The recording magnetic field concentrates directly below the tip surface of the tip piece. At the same time, the magnetic field leaking from the inner end of the second magnetic layer toward the tip piece is superimposed on the recording magnetic field. On the other hand, the leakage magnetic field leaking from the side surface of the tip piece or the second magnetic layer toward the medium facing surface is absorbed by the first magnetic layer. As a result, the strength of the recording magnetic field increases. At the same time, the generation of a leakage magnetic field, that is, an erase magnetic field from the medium facing surface toward the storage medium is avoided. For example, side erasure is avoided. In addition, a steep gradient is established in the recording magnetic field leaking from the tip of the tip piece. The resolution of magnetic recording is increased. Such a magnetic recording head can greatly contribute to the improvement of the recording density.

On the other hand, for example, a magnetic field is generated from the tip piece toward the inner end of the second magnetic layer. Such a magnetic field is superimposed on the recording magnetic field. On the other hand, in the first magnetic layer, magnetization is established inward toward the tip piece in the horizontal direction perpendicular to the central axis. As a result, the spread of the leakage magnetic field leaking from the side surface of the tip piece is prevented. The recording magnetic field concentrates directly below the tip surface of the tip piece. As a result, the strength of the recording magnetic field increases. At the same time, generation of a leakage magnetic field, that is, an erase magnetic field from the medium facing surface toward the recording medium is avoided. For example, side erasure is avoided. In addition, a steep gradient is established in the recording magnetic field leaking from the tip of the tip piece. The resolution of magnetic recording is increased. Such a magnetic recording head can greatly contribute to the improvement of the recording density.

1 is a plan view schematically showing an internal structure of a specific example of a storage device according to the present invention, that is, a hard disk drive (HDD). FIG. 6 is an enlarged perspective view schematically showing a flying head slider according to a specific example. It is a front view of the electromagnetic conversion element which shows roughly the electromagnetic conversion element observed from a medium opposing surface. FIG. 4 is a cross-sectional view taken along line 4-4 of FIG. FIG. 5 is a cross-sectional view taken along line 5-5 of FIG. It is a front view of the reading element schematically showing the reading element observed from the medium facing surface. It is a front view of the writing element which shows roughly the writing element observed from the medium facing surface. FIG. 8 is a cross-sectional view taken along line 8-8 in FIG. It is sectional drawing which shows a mode that magnetization is established with a main pole and a shield. It is sectional drawing which shows a mode that magnetization is established with a main pole and a shield. It is a graph of the magnetic field strength measured along a medium facing surface. It is the top view and sectional drawing which show schematically the process of forming a tunnel junction magnetoresistive film on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a tunnel junction magnetoresistive film on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a tunnel junction magnetoresistive film on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a tunnel junction magnetoresistive film on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a shield on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a shield on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a shield on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a shield on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a tunnel junction magnetoresistive film on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a tunnel junction magnetoresistive film on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a tunnel junction magnetoresistive film on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a tunnel junction magnetoresistive film on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a tunnel junction magnetoresistive film on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming an electrode layer on a tunnel junction magnetoresistive film. It is the top view and sectional drawing which show schematically the process of forming an electrode layer on a tunnel junction magnetoresistive film. It is the top view and sectional drawing which show schematically the process of forming an electrode layer on a tunnel junction magnetoresistive film. It is the top view and sectional drawing which show schematically the process of forming an electrode layer on a tunnel junction magnetoresistive film. It is the top view and sectional drawing which show schematically the process of forming a shield on a wafer substrate. It is the top view and sectional view which show roughly the process of forming a main pole on a wafer substrate. It is the top view and sectional view which show roughly the process of forming a main pole on a wafer substrate. It is the top view and sectional view which show roughly the process of forming a main pole on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a shield on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a shield on a wafer substrate. It is the top view and sectional drawing which show schematically the process of forming a shield and a main pole on a wafer substrate. It is the top view and sectional view which show the process of forming a thin film coil pattern roughly. It is the top view and sectional view which show the process of forming a thin film coil pattern roughly. It is the top view and sectional view which show the process of forming a thin film coil pattern roughly. It is the top view and sectional view which show the process of forming a thin film coil pattern roughly. It is the top view and sectional view which show the process of forming a thin film coil pattern roughly. It is the top view and sectional view which show the process of forming a thin film coil pattern roughly. It is the top view and sectional view which show the process of forming a thin film coil pattern roughly. It is the top view and sectional view which show the process of forming a thin film coil pattern roughly. It is the top view and sectional drawing which show schematically the process of forming a return yoke. It is the top view and sectional drawing which show schematically the process of joining a board | substrate to an element incorporation film. It is the top view and sectional drawing which show roughly the process of performing the grinding | polishing process on the surface of an element incorporation film. It is a front view of the electromagnetic conversion element which shows roughly the other electromagnetic conversion element observed from a medium opposing surface. It is a front view of the electromagnetic conversion element which shows roughly the other electromagnetic conversion element observed from a medium opposing surface. It is a front view of the electromagnetic conversion element which shows roughly the other electromagnetic conversion element observed from a medium opposing surface.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 1 schematically shows an internal structure of a hard disk drive (HDD) 11 as a specific example of a storage device according to the present invention. The HDD 11 includes a housing, that is, a housing 12. The housing 12 includes a box-shaped base 13 and a cover (not shown). The base 13 defines, for example, a flat rectangular parallelepiped internal space, that is, an accommodation space. The base 13 may be formed from a metal material such as Al (aluminum) based on casting. The cover is coupled to the opening of the base 13. The accommodation space is sealed between the cover and the base 13. The cover may be formed from a single plate material based on press working, for example.

In the accommodation space, one or more magnetic disks 14 as storage media are accommodated. The magnetic disk 14 is mounted on the drive shaft of the spindle motor 15. The spindle motor 15 can rotate the magnetic disk 14 at a high speed such as 3600 rpm, 4200 rpm, 5400 rpm, 7200 rpm, 10000 rpm, and 15000 rpm. Here, the magnetic disk 14 is configured as a perpendicular magnetic recording disk, for example. That is, in the recording magnetic film on the magnetic disk 14, the easy axis of magnetization is set in the vertical direction perpendicular to the surface of the magnetic disk 14.

The carriage 16 is further accommodated in the accommodation space. The carriage 16 includes a carriage block 17. The carriage block 17 is rotatably connected to a support shaft 18 extending in the vertical direction. A plurality of carriage arms 19 extending in the horizontal direction from the support shaft 18 are defined in the carriage block 17. The carriage block 17 may be molded from Al (aluminum) based on extrusion molding, for example.

A head suspension 21 is attached to the tip of each carriage arm 19. The head suspension 21 extends forward from the tip of the carriage arm 19. A flexure is attached to the head suspension 21. A gimbal is defined in the flexure at the tip of the head suspension 21. A magnetic head slider, that is, a flying head slider 22 is mounted on the gimbal. The posture of the flying head slider 22 can be changed with respect to the head suspension 21 by the action of the gimbal. A magnetic head, that is, an electromagnetic transducer is mounted on the flying head slider 22.

When an air flow is generated on the surface of the magnetic disk 14 based on the rotation of the magnetic disk 14, positive pressure, that is, buoyancy and negative pressure act on the flying head slider 22 by the action of the air flow. Since the buoyancy and negative pressure balance with the pressing force of the head suspension 21, the flying head slider 22 can continue to fly with relatively high rigidity during the rotation of the magnetic disk.

A power source such as a voice coil motor (VCM) 23 is connected to the carriage block 17. The carriage block 17 can rotate around the support shaft 18 by the action of the VCM 23. Based on the rotation of the carriage block 17, the swing of the carriage arm 19 and the head suspension 21 is realized. When the carriage arm 19 swings around the spindle 18 while the flying head slider 22 is flying, the flying head slider 22 can move along the radial line of the magnetic disk 14. As a result, the electromagnetic transducer on the flying head slider 22 can cross the data zone between the innermost recording track and the outermost recording track. Thus, the electromagnetic transducer on the flying head slider 22 is positioned on the target recording track.

FIG. 2 shows a flying head slider 22 according to a specific example. The flying head slider 22 includes a base material, that is, a slider body 25 formed in a flat rectangular parallelepiped, for example. A substrate 26 and an insulating nonmagnetic film, that is, an element built-in film 27 are integrated with the end face on the air outflow side of the slider body 25. The element built-in film 27 is bonded to the substrate 26. The substrate 26 is disposed behind the element built-in film 27. An electromagnetic conversion element 28 is incorporated in the element built-in film 27. Details of the electromagnetic transducer 28 will be described later.

The slider body 25 and the substrate 26 are made of a hard nonmagnetic material such as Al ₂ O ₃ —TiC (Altic). The element built-in film 27 is made of a relatively soft insulating nonmagnetic material such as Al ₂ O ₃ (alumina). The slider body 25 faces the magnetic disk 14 at the medium facing surface 29. A flat base surface 31, that is, a reference surface is defined on the medium facing surface 29. When the magnetic disk 14 rotates, an air flow 32 acts on the medium facing surface 29 from the front end to the rear end of the slider body 25.

The medium facing surface 29 is formed with a single front rail 33 that rises from the base surface 31 on the upstream side of the airflow 32, that is, on the air inflow side. The front rail 33 extends in the slider width direction along the air inflow end of the base surface 31. Similarly, a rear center rail 34 that rises from the base surface 31 on the downstream side of the air flow 32, that is, on the air outflow side, is formed on the medium facing surface 29. The rear center rail 34 is disposed at the center position in the slider width direction. The rear center rail 34 reaches the element built-in film 27. A pair of left and right rear side rails 35, 35 are further formed on the medium facing surface 29. The rear side rail 35 rises from the base surface 31 along the side end of the slider body 25 on the air outflow side. The rear center rail 34 is disposed between the rear side rails 35, 35.

A so-called air bearing surface (ABS) 36, 37, 38, 38 is defined on the top surfaces of the front rail 33, the rear center rail 34, and the rear side rails 35, 35. The air inflow ends of the air bearing surfaces 36, 37 and 38 are connected to the top surfaces of the front rail 33, the rear center rail 34 and the rear side rail 35 by steps. When the air flow 32 is received by the medium facing surface 29, a relatively large positive pressure, that is, buoyancy, is generated on the air bearing surfaces 36, 37, and 38 by the action of the step. In addition, a large negative pressure is generated behind the front rail 33, that is, behind the front rail 33. The flying posture of the flying head slider 22 is established based on the balance between these buoyancy and negative pressure.

The electromagnetic conversion element 28 is embedded in the rear center rail 34 on the air outflow side of the air bearing surface 37. The electromagnetic transducer 28 includes, for example, a reading element and a magnetic recording head, that is, a writing element. A tunnel junction magnetoresistive effect (TuMR) element is used as the read element. In the TuMR element, the resistance change of the tunnel junction film is caused according to the direction of the magnetic field acting from the magnetic disk 14. Information is read from the magnetic disk 14 based on such resistance change. A so-called single pole head is used for the writing element. The single pole head generates a recording magnetic field by the action of a thin film coil pattern. Magnetic information, that is, binary information is written to the magnetic disk 14 by the action of the recording magnetic field. The electromagnetic conversion element 28 exposes the reading gap of the reading element and the writing gap of the writing element on the surface of the element built-in film 27. Note that a giant magnetoresistive (GMR) element may be used as the read element.

In addition, a hard protective film may be formed on the surface of the element built-in film 27 on the air outflow side of the air bearing surface 37. Such a hard protective film covers the read gap and the write gap exposed on the surface of the element built-in film 27. For example, a DLC (diamond-like carbon) film may be used as the protective film. The form of the flying head slider 22 is not limited to this form.

FIG. 3 schematically shows the structure of the electromagnetic transducer 28. The read element 41 is configured as a planar type. The read element 41 includes a tunnel junction magnetoresistive film 42 exposed on the surface of the rear center rail 34, that is, the medium facing surface 29. The tunnel junction magnetoresistive film 42 is surrounded by a shield 43 that defines a rectangular outline, for example. The shield 43 surrounds the tunnel junction magnetoresistive film 42 without interruption. The shield 43 is made of a high magnetic permeability material such as CoFe (cobalt iron), FeN (iron nitride), or NiFe (nickel iron). The spacing between the shields 43 defined in the front-rear direction of the flying head slider 22 determines the resolution of magnetic recording on the magnetic disk 14 in the down-track direction of the recording track.

The writing element 44, that is, the single-pole head is similarly configured as a planar type. The writing element 44 includes a main magnetic pole 45 whose tip is exposed at the medium facing surface 29. Here, the front end surface of the main magnetic pole 45 defines a rectangular outline at the medium facing surface 29. The main magnetic pole 45 is surrounded by a shield 46 that extends along the medium facing surface 29. The outline of the shield 46 is defined as a rectangle, for example. The shield 46 surrounds the main magnetic pole 45 without interruption. The main magnetic pole 45 is made of a magnetic material such as CoFe (cobalt iron), FeN (iron nitride), or NiFe (nickel iron). Details of the writing element 44 will be described later.

Referring also to FIG. 4, the rear end of the main pole 45 is connected to the return yoke 47. Here, a pair of magnetic coils, that is, thin

film coil patterns

48 and 49 are formed around the main magnetic pole 45. Thus, the main magnetic pole 45 and the return yoke 47 form a magnetic core that penetrates the center position of the thin

film coil patterns

48 and 49. The recording magnetic field leaking from the tip of the main magnetic pole 45 returns to the return yoke 47. The return yoke 47 is made of a magnetic material such as CoFe (cobalt iron), FeN (iron nitride), or NiFe (nickel iron). The thin

film coil patterns

48 and 49 are made of a conductive material such as Cu (copper).

As shown in FIG. 5, in the read element 41, the tunnel junction magnetoresistive film 42 includes a free layer 51 exposed at the medium facing surface 29, and a pair of tunnel barrier layers 52 stacked on the free layer 51. And a pair of pinned layers 53 respectively stacked on the tunnel barrier layer 52. The free layer 51 is formed from a ferromagnetic layer. The free layer 51 allows a change in the magnetization direction according to the action of an external magnetic field acting from the magnetic disk 14. The tunnel barrier layer 52 is formed from an insulating material. The pinned layer 53 is formed from a ferromagnetic layer. In the pinned layer 53, the magnetization is fixed in a predetermined direction. On the pinned layer 53, an electrode layer 54 is laminated. Referring also to FIG. 6, the free layer 51, the tunnel barrier layer 52, the pinned layer 53, and the electrode layer 54 define, for example, a rectangular outline.

As shown in FIG. 7, the return yoke 47 is larger than the shield 46, for example. The return yoke 47 defines a rectangular outline, for example. As shown in FIG. 8, the main magnetic pole 45 defines the tip piece 45 a and the main magnetic pole body 45 b along the central axis CX of the main magnetic pole 45 orthogonal to the medium facing surface 29. The tip piece 45a is formed in, for example, a truncated pyramid shape that tapers toward the tip facing the medium facing surface 29. A tip surface is defined at the tip of the tip piece 45a. The outline of the tip surface is defined as a square, for example. The main magnetic pole body 45b is connected to the rear end of the tip piece 45a. The main magnetic pole body 45b is formed in a prismatic shape, for example. A nonmagnetic gap layer 55 is sandwiched between the tip piece 45 a and the shield 46. The thin

film coil patterns

48 and 49 are formed around the main magnetic pole body 45 b behind the shield 46. The tip piece 45 a may be formed in a truncated cone shape that tapers toward the tip facing the medium facing surface 29.

On the other hand, the shield 46 includes a tip film 46 a extending along the medium facing surface 29. The tip film 46a is opposed to the tip piece 45a at the inner end. The shield 46 includes a connecting piece 46b that is connected to the outer end of the tip film 46a. The connecting piece 46b connects the tip film 46a and the main magnetic pole body 45b to each other. The tip film 46 a is formed from a stacked body of a first magnetic layer 56, a nonmagnetic layer 57, and a second magnetic layer 58 that are sequentially stacked in a direction orthogonal to the medium facing surface 29. The first and second

magnetic layers

56 and 58 are made of a soft magnetic material such as NiFe, for example. Here, the first and second

magnetic layers

56 and 58 are formed of the same material. The nonmagnetic layer 57 is made of a nonmagnetic material such as Ru (ruthenium), Cr (chromium), Ir (iridium), or Rh (rhodium).

Magnetization is established between the first magnetic layer 56 and the second magnetic layer 58 antiparallel to each other based on exchange coupling. Magnetization is defined in a direction parallel to the medium facing surface 29. The first magnetic layer 56 defines a first magnetization amount. In the second magnetic layer 58, a second magnetization amount larger than the first magnetization amount is defined. Since the cross-sectional areas of the first and second

magnetic layers

56 and 58 defined along the virtual plane orthogonal to the central axis CX are set to be approximately equal, the magnetization amount is, for example, the saturation magnetization amount (Ms) and the film thickness ( t). When the first and second

magnetic layers

56 and 58 are formed of the same material, the saturation magnetization amounts (Ms) of the first and second

magnetic layers

56 and 58 are set equal. Therefore, in setting the amount of magnetization, the second magnetic layer 58 may be set to have a larger film thickness than the first magnetic layer 56. When the first and second

magnetic layers

56 and 58 are formed of different materials, the product of the saturation magnetization amount (Ms) and the film thickness (t) of the material is the second magnetic layer 58 and the first magnetic layer 56. It may be set larger.

Here, the length of one side of the tip surface of the tip piece 45a is set to 100 nm, for example. The film thickness of the tip piece 45a defined along the central axis CX from the medium facing surface 29 is set to about 200 nm, for example. The length of one side of the cross section of the main magnetic pole body 45b orthogonal to the central axis CX is set to 600 nm, for example. The film thickness of the gap layer 55 is set to 5 nm, for example. The film thickness is defined in the vertical direction perpendicular to the side surface of the tip piece 45a. The film thickness of the first magnetic layer 56 is set to about 20 nm, for example. The film thickness of the second magnetic layer 58 is set to about 70 nm, for example. The film thickness of the nonmagnetic layer 57 is set to about 5 nm, for example. The length from the inner end to the outer end of the tip film 46a defined along the medium facing surface 29 is set to about 1000 nm, for example.

In the HDD 11 as described above, a current is supplied to the thin

film coil patterns

48 and 49 when binary information is written. The thin

film coil patterns

48 and 49 excite the main magnetic pole 45. As shown in FIG. 9, in the main magnetic pole 45, for example, magnetization is established downward in the vertical direction along the central axis CX. As a result, a downward recording magnetic field is formed from the front end surface of the front end piece 45 a, that is, the medium facing surface 29 toward the magnetic disk 14. Since the connecting piece 46 b of the shield 46 is connected to the main magnetic pole 45, the shield 46 is excited simultaneously with the main magnetic pole 45. As a result, magnetization is established from the main magnetic pole body 45b toward the connecting piece 46b and the tip film 46a. Since the second magnetic layer 58 has a larger amount of magnetization than the first magnetic layer 56, the tip film 46a faces inward toward the tip piece 45a in the horizontal direction perpendicular to the central axis CX in the second magnetic layer 58. Magnetization is fixed. As a result, a magnetic field is generated from the inner end of the second magnetic layer 58 toward the tip piece 45a. The spread of the leakage magnetic field leaking from the side surface of the tip piece 45a is prevented. The recording magnetic field concentrates directly below the tip surface of the tip piece 45a. At the same time, the magnetic field leaking from the inner end of the second magnetic layer 58 toward the tip piece 45a is superimposed on the recording magnetic field. On the other hand, in the first magnetic layer 56, magnetization is established outwardly away from the tip piece 45a in the horizontal direction orthogonal to the central axis CX based on the exchange coupling. The leakage magnetic field leaking from the side surface of the tip piece 45 a and the second magnetic layer 58 toward the medium facing surface 29 is absorbed by the first magnetic layer 56. As a result, the strength of the recording magnetic field increases. At the same time, generation of a leakage magnetic field, that is, an erase magnetic field from the medium facing surface 29 toward the magnetic disk 14 is avoided. For example, side erasure is avoided. In addition, a steep gradient is established in the recording magnetic field leaking from the tip of the tip piece 45a. The resolution of magnetic recording is increased. Such a writing element 44 can greatly contribute to the improvement of the recording density.

On the other hand, when a current is supplied to the thin

film coil patterns

48 and 49 in the opposite direction, the thin

film coil patterns

48 and 49 excite the main magnetic pole 45. At this time, as shown in FIG. 10, in the main magnetic pole 45, for example, magnetization is established upward in the vertical direction along the central axis CX. As a result, an upward recording magnetic field is generated from the magnetic disk 14 toward the distal end surface of the distal end piece 45a, that is, the medium facing surface 29. As before, the shield 46 is excited simultaneously with the main pole 45. As a result, magnetization is established from the connecting piece 46b and the tip film 46a toward the main magnetic pole body 45b. Since the second magnetic layer 58 has a larger amount of magnetization than the first magnetic layer 56, the tip film 46a is magnetized outwardly away from the tip piece 45a in the horizontal direction perpendicular to the central axis CX in the second magnetic layer 58. Is fixed. As a result, a magnetic field is generated from the tip piece 45 a toward the inner end of the second magnetic layer 58. Such a magnetic field is superimposed on the recording magnetic field. On the other hand, in the first magnetic layer 56, magnetization is established inward toward the tip piece 45a in the horizontal direction orthogonal to the central axis CX based on the exchange coupling. As a result, the spread of the leakage magnetic field leaking from the side surface of the tip piece 45a is prevented. The recording magnetic field concentrates directly below the tip surface of the tip piece 45a. As a result, the strength of the recording magnetic field increases. At the same time, generation of a leakage magnetic field, that is, an erase magnetic field from the medium facing surface 29 toward the magnetic disk 14 is avoided. For example, side erasure is avoided. In addition, a steep gradient is established in the recording magnetic field leaking from the tip of the tip piece 45a. The resolution of magnetic recording is increased. Such a writing element 44 can greatly contribute to the improvement of the recording density.

The inventor verified the strength of the recording magnetic field. A simulation was conducted for verification. Write elements according to specific examples, comparative example 1 and comparative example 2 were prepared. In the specific example, the writing element 44 described above was used. In the write element according to Comparative Example 1, only the main magnetic pole 45 described above was incorporated. In the write element according to Comparative Example 2, a pair of shields were disposed along the medium facing surface 29 on both sides of the main magnetic pole 45 described above. The thickness of the shield defined in the direction orthogonal to the medium facing surface 29 was set to 50 nm. At this time, in the specific example, Comparative Example 1 and Comparative Example 2, magnetization of 1 [T] was established in the main magnetic pole 45 downward. A soft magnetic backing layer of the magnetic disk was assumed at a position 50 nm from the medium facing surface 29. The film thickness of the backing layer was set to 25 nm. A magnetization of 1 [T] was established in the backing layer. At this time, the magnetic field strength was calculated in a direction away from the reference point parallel to the medium facing surface 29 from the reference point immediately below the tip surface of the tip piece 46 at a distance of 10 nm from the medium facing surface 29. The magnetic field strength was calculated using an x component parallel to the medium facing surface 29 and a y component orthogonal to the medium facing surface 29.

As a result, as shown in FIG. 11, in Comparative Example 1, the magnetic field strength of the y component was weakened as the distance from the reference point was increased. The magnetic field intensity of the x component decreased outward from the 50 nm position while increasing with increasing distance from the reference point. In Comparative Example 2, the magnetic field strength of the y component was weakened with increasing distance from the reference point. The magnetic field intensity decreased compared to Comparative Example 1. On the other hand, the magnetic field strength of the x component increased from that of Comparative Example 1. On the other hand, in the specific example, the magnetic field strength of the y component transitioned in the same manner as in Comparative Example 2, but the magnetic field strength increased more than Comparative Examples 1 and 2. The magnetic field intensity became almost zero at a position outside of 70 nm. Similarly, the magnetic field intensity of the x component changed in the same manner as in Comparative Examples 1 and 2. From the above, it was confirmed that in the specific example according to the present invention, the magnetic field strength of the y component was increased as compared with the comparative examples 1 and 2, and the magnetic field strength of the x component was decreased as compared with the comparative example 2.

Next, a method for manufacturing the flying head slider 22 will be described. First, the element built-in film 27 is formed. First, the read element 41 is formed. As shown in FIG. 12, a material film 62 of the free layer 51 and a material film 63 of the tunnel barrier layer 52 are formed on the surface of the wafer substrate 61. The

material films

62 and 63 are formed from a solid film. The film thickness of the material film 62 is set larger than the film thickness of the free layer 51. For example, a Si (silicon) substrate is used as the wafer substrate 61. For forming the

material films

62 and 63, for example, sputtering is performed in a vacuum. A photoresist 64 is formed in a predetermined pattern on the surface of the material film 63. The contour of the photoresist 64 on the surface of the material film 63 is similar to the contour of the free layer 51. For the formation, for example, a photolithography technique is used.

Thereafter, the

material films

62 and 63 are etched using the photoresist 64 as a mask. Etching includes, for example, physical etching and reactive ion etching (RIE). As a result, as shown in FIG. 13, the

material films

62 and 63 are cut out to a predetermined contour. A free layer 51 is formed based on the material film 62. The surface of the wafer substrate 61 is exposed outside the

material films

62 and 63. Thereafter, as shown in FIG. 14, an insulating film 65 is formed on the surface of the wafer substrate 61. For the formation, for example, sputtering is performed in a vacuum. The surface of the insulating film 65 is aligned with the surface of the material film 63. As shown in FIG. 15, the photoresist 64 is removed based on the lift-off method.

Thereafter, as shown in FIG. 16, a photoresist 66 is formed in a predetermined pattern on the surface of the insulating film 65. The air gap formed by the photoresist 66 represents the outline of the shield 43. The insulating film 65 is etched using the photoresist 66 as a mask. As a result, as shown in FIG. 17, the surface of the wafer substrate 61 is exposed in the gap. Thereafter, as shown in FIG. 18, a material film 67 of the shield 43 is formed on the surface of the wafer substrate 61. Subsequently, as shown in FIG. 19, an insulating film 68 is formed on the surface of the wafer substrate 61. The surface of the insulating film 68 is aligned with the surface of the insulating film 65. Thereafter, the photoresist 66 is removed based on the lift-off method. The shield 43 is formed based on the material film 67.

Thereafter, as shown in FIG. 20, a material film 69 of the pinned layer 53 is formed. The material film 69 is formed from a solid film. For the formation, for example, sputtering is performed in a vacuum. As shown in FIG. 21, a photoresist 71 is formed on the surface of the material film 69 in a predetermined pattern. On the surface of the material film 69, the contour of the photoresist 71 represents the contour of the pinned layer 53. The material film 69 is etched using the photoresist 71 as a mask. As a result, as shown in FIG. 22, the material film 69 is cut out to a predetermined contour on the insulating film 65. A pinned layer 53 is formed based on the material film 69. At the same time, the material film 63 is cut out to a predetermined contour on the free layer 51. A tunnel barrier layer 52 is formed based on the material film 63.

Thereafter, as shown in FIG. 23, an insulating film 72 is formed on the insulating film 65. The surface of the insulating film 72 is aligned with the surface of the pinned layer 53. As shown in FIG. 24, the photoresist 71 is removed based on the lift-off method. Thereafter, as shown in FIG. 25, a photoresist 73 is formed on the wafer substrate 61 in a predetermined pattern. In the photoresist 73, a void that represents the contour of the electrode layer 54 is defined. As shown in FIG. 26, a conductive film 74 is formed on the wafer substrate 61. Thereafter, as shown in FIG. 27, the photoresist 73 is removed based on the lift-off method. Thus, a pair of electrode layers 54 is formed.

Thereafter, lead wires (not shown) are formed on the surface of the insulating film 72. The lead wiring connects the conductive terminal formed on the air outflow side end surface of the flying head slider 22 and the electrode layer 54. Thus, the reading element 41 is formed on the wafer substrate 61. Thereafter, as shown in FIG. 28, an insulating film 75 is formed on the wafer substrate 61. The insulating film 75 covers the reading element 41 on the wafer substrate 61. Thereafter, the reading element 41 is covered with a photoresist (not shown). Such a photoresist avoids damage to the read element 41 when a write element 44 described later is formed.

Next, the writing element 44 is formed. As shown in FIG. 29, a laminated body 81 of shields 46 is formed on the wafer substrate 61 described above. The stacked body 81 is formed adjacent to the reading element 41. In the formation, the first magnetic layer, the nonmagnetic layer, and the second magnetic layer are laminated. For example, sputtering is performed for stacking. Based on the sputtering conditions, the first and second magnetic layers and the nonmagnetic layer are set to predetermined thicknesses. A photoresist 82 is formed in a predetermined pattern on the surface of the stacked body 81. The air gap formed by the photoresist 82 represents the contour of the main magnetic pole 45. Thereafter, the stacked body 81 is etched using the photoresist 82 as a mask. At this time, the incident direction of the beam is adjusted.

As a result, as shown in FIG. 30, a truncated pyramid-shaped gap is formed in the stacked body 81. The gap is tapered toward the wafer substrate 61. Thus, the tip film 46 a of the shield 46 is formed based on the laminated body 81. Thereafter, as shown in FIG. 31, a nonmagnetic film 83 and a magnetic film 84 are formed on the wafer substrate 61 with a predetermined film thickness. Sputtering is performed for the formation. The aforementioned gap layer 55 is formed based on the nonmagnetic film 83. Based on the magnetic film 84, the tip piece 45a of the main magnetic pole 45 is formed. Thereafter, as shown in FIG. 32, the photoresist 82 is removed from the surface of the wafer substrate 61 based on the lift-off method.

33, a photoresist 85 is formed on the wafer substrate 61 in a predetermined pattern. The photoresist 85 is disposed along the outer periphery of the tip film 46a. An insulating film 86 is formed on the wafer substrate 61 using the photoresist 85 as a mask. Thereafter, as shown in FIG. 34, the photoresist 85 is removed based on the lift-off method. As shown in FIG. 35, a photoresist 87 is formed on the insulating film 86 in a predetermined pattern. The photoresist 87 forms a gap that represents the outline of the connecting piece 46b. Subsequently, a magnetic film 88 is formed on the wafer substrate 61. Based on the magnetic film 88, the connecting piece 46b is formed on the tip film 46a. After the formation, the photoresist 87 is removed.

36, a photoresist 89 is formed on the magnetic film 88. As shown in FIG. An insulating film 91 is formed on the substrate 61 using the photoresist 89 as a mask. After the formation, the photoresist 89 is removed from the magnetic film 88 based on the lift-off method. Thereafter, as shown in FIG. 37, a photoresist 92 is formed on the wafer substrate 61 in a predetermined pattern. The photoresist 92 is formed with a space that represents the outline of the thin-film coil pattern 48. Subsequently, a conductive film 93 is formed on the wafer substrate 61. As shown in FIG. 38, the photoresist 92 is removed from the insulating film 93. Thus, a thin film coil pattern 48 is formed.

39, a photoresist 94 is formed on the magnetic film 88 and a predetermined region of the thin film coil pattern 48. An insulating film 95 is formed on the wafer substrate 61. As shown in FIG. 40, the photoresist 94 is removed based on the lift-off method. As shown in FIG. 41, a photoresist 96 is formed on the insulating film 95 with a predetermined pattern. In the photoresist 96, a gap that represents the outline of the thin film coil pattern 49 is formed. A magnetic conductive film 97 is formed on the wafer substrate 61. A thin film coil pattern 49 is formed based on the conductive film 97. As shown in FIG. 42, the photoresist 96 is removed from the wafer substrate 61.

As shown in FIG. 43, an insulating film 99 is formed in a predetermined pattern on the insulating film 95 using a photoresist 98 formed on the magnetic film 88 as a mask. Photoresist 98 is removed. As shown in FIG. 44, a return yoke 47 is formed based on a photoresist (not shown) formed on the insulating film 99. At the same time, lead wires (not shown) connected to the thin film coil pattern 49 are formed. Thus, the writing element 44 is formed. An insulating film 101 is formed on the insulating film 99 so as to cover the return yoke 47. Thereafter, the photoresist on the reading element 41 is removed. After the removal, the insulating film 75 on the reading element 41 and the insulating film 101 on the writing element 44 are polished. In the polishing process, a chemical mechanical polishing (CMP) method is performed.

Thereafter, as shown in FIG. 45, the substrate 26 is bonded to the surface of the insulating film 75 and the surface of the insulating film 101. For joining, for example, electrolytic welding is performed. The substrate 26 is made of, for example, Al ₂ O ₃ —TiC. Subsequently, the wafer substrate 61 is removed. For the removal, for example, chemical etching is performed. Thus, a unit of the substrate 26 and the element built-in film 27 is formed. Thereafter, the surface of the element built-in film 27 is etched or polished. The surface of the element built-in film 27 is shaved. As a result, in the read element 41, the size of the free layer 51 is adjusted to a predetermined value. At the same time, as shown in FIG. 46, the nonmagnetic film 83 is removed. As a result, the tip piece 45 a of the main magnetic pole 45 is exposed in the writing element 44. The dimension of the tip piece 45a is adjusted to a predetermined value.

Thereafter, the unit of the substrate 26 and the element built-in film 27 is joined to a bar (not shown) that defines the plurality of slider bodies 25. For joining, for example, electrolytic welding is performed. In the bar, a medium facing surface 29 is formed for each head slider. Thereafter, the individual flying head sliders 22 are cut out from the bars. Thus, the flying head slider 22 is manufactured.

FIG. 47 schematically shows the structure of a write element 44a according to another specific example. In the writing element 44a, the tip film 46a of the shield 46 is divided into four. In the medium facing surface 29, the tip film 46a is opposed to each side of the tip face of the tip piece 45a at the inner end. Thus, the shield 46 surrounds the main magnetic pole 45. At the same time, the connecting piece 46b is divided into four. Each connecting piece 46b is connected to each tip film 46a. Thus, each tip film 46a is individually connected to the main magnetic pole body 45b of the main magnetic pole 45 by the connecting piece 46b. Like reference numerals are attached to the structure or components equivalent to those described above. According to such a writing element 44a, the same effect as described above is realized.

In addition, as shown in FIG. 48, in the writing element 44a, a thin film coil pattern 105 may be individually formed around each connecting piece 46b. The aforementioned thin film coil pattern 48 is formed around the main magnetic pole body 45 b of the main magnetic pole 45. The thin film coil pattern 48 and the thin film coil pattern 105 are individually supplied with current. As a result, in the write element 44a, the main magnetic pole 45 and the shield 46 are individually excited. The main magnetic pole 45 and the shield 46 may be excited simultaneously or separately. Like reference numerals are attached to the structure or components equivalent to those described above. According to such a writing element 44a, the same effect as described above is realized. Note that the tip film 46 a of the shield 46 may define a rectangular outline in the same manner as the writing element 44 described above. At this time, each connecting piece 46b is connected along each side of the contour of the tip film 46a.

In addition, as shown in FIG. 49, in the writing element 44a, the connecting piece 46b may be interrupted. Thus, the main magnetic pole 45 and the shield 46 are not connected to each other. Similarly to the above, the thin film coil pattern 105 is individually formed around each connecting piece 46b. The aforementioned thin film coil pattern 48 is formed around the main magnetic pole body 45b. Thus, the main magnetic pole 45 and the shield 46 are individually excited. The main magnetic pole 45 and the shield 46 may be excited simultaneously or separately. Like reference numerals are attached to the structure or components equivalent to those described above. According to such a writing element 44a, the same effect as described above is realized. Note that the tip film 46 a of the shield 46 may define a rectangular outline in the same manner as the writing element 44 described above.

Claims

A main pole that defines a tip piece that tapers toward a tip facing a medium facing surface facing a storage medium and establishes magnetization along a central axis perpendicular to the medium facing surface;
A shield that extends along the medium facing surface and faces the tip piece,
The shield is
A first magnetic layer having a first magnetization amount extending along the medium facing surface and establishing magnetization in a first direction orthogonal to the central axis;
A nonmagnetic layer laminated on the surface of the first magnetic layer;
A second magnetic layer that is stacked on a surface of the nonmagnetic layer and has a second magnetization amount larger than the first magnetization amount and establishes magnetization in a second direction antiparallel to the first direction. Characteristic magnetic recording head.
2. The magnetic recording head according to claim 1, wherein the magnetization of the first magnetic layer and the magnetization of the second magnetic layer are defined antiparallel to each other based on exchange coupling.
3. The magnetic recording head according to claim 1, further comprising a magnetic coil that is formed around the main magnetic pole and simultaneously excites the main magnetic pole and the shield connected to the main magnetic pole. Magnetic recording head.
4. The magnetic recording head according to claim 3, wherein the magnetic coil establishes downward magnetization toward the medium facing surface along the central axis at the main magnetic pole, and at the main magnetic pole at the second magnetic layer. A magnetic recording head characterized in that magnetization is established in a heading direction.
5. The magnetic recording head according to claim 3, wherein the magnetic coil establishes upward magnetization toward the rear from the medium facing surface along the central axis at the main magnetic pole, and at the second magnetic layer. A magnetic recording head characterized in that magnetization is established in a direction away from the main magnetic pole.
A main pole that defines a tip piece that tapers toward a tip facing a medium facing surface facing a storage medium and establishes magnetization along a central axis perpendicular to the medium facing surface;
A shield that extends along the medium facing surface and faces the tip piece,
The shield is
A first magnetic layer having a first magnetization amount extending along the medium facing surface and establishing magnetization in a first direction orthogonal to the central axis;
A nonmagnetic layer laminated on the surface of the first magnetic layer;
A magnetic recording comprising: a second magnetic layer stacked on a surface of the nonmagnetic layer and having a second magnetization amount larger than the first magnetization amount and establishing magnetization in a second direction antiparallel to the first direction. A storage device having a built-in head.