WO2010048911A1

WO2010048911A1 - Apparatus having an emitter contact, a collector contact and a gap, and method for the production thereof

Info

Publication number: WO2010048911A1
Application number: PCT/DE2009/001144
Authority: WO
Inventors: Rainer Fink; Johannes Landgraf
Original assignee: Rainer Fink; Johannes Landgraf
Priority date: 2008-10-29
Filing date: 2009-08-14
Publication date: 2010-05-06
Also published as: DE112009003290A5; DE112009003290B4; DE102009030224A1

Abstract

The invention relates to an apparatus having an emitter contact, a collector contact, and a gap, wherein the gap is designed such that frustrated total internal reflection takes place at the gap, to a network having a plurality of apparatuses, to a system comprising an apparatus, and to a method for producing the apparatus.

Description

Device with an emitter contact, a collector contact and a gap and

Process for their preparation

[01] The invention relates to a device with an emitter contact, a collector contact and a gap, a network with a plurality of devices, a system with a device and a method for producing the device.

[02] Such a device can be used for the quantitative high-resolution detection of very small movements, deformations, changes in distance and position changes in the range of a few nanometers and below. Such devices are well known in the art.

[03] For example, simple devices for measuring minute distances using nano-optical converter from the publications DE 41065548, US 4286468, US 4421384, US 5891747 and DE 10039094 are known. They mainly use the principle of the distance-dependent transmission of photons through optically totally reflecting boundary layers. The physical background for this known effect is called an evanescent electromagnetic field and is comparable to the tunnel effect at a potential barrier.

These previously known devices have a variety of disadvantages in manufacturing and durability, which is why significant further developments and improvements are necessary for mass production in large quantities. For example, light-conducting fibers must be ground flat, polished and then mounted opposite at a suitable angle, with the desired gap spacing to be created. This does not succeed with the desired precision and reproducibility. [05] On the other hand, there are complex, even spatially-sized systems (similar to the Atomic Force Microscope - AFM) for detecting the smallest structures by means of the interactions with the evanescent electro-magnetic field. These record, for example, the smallest spatial or planar structures via the force in the evanescent field on the smallest peaks.

[06] The object of the present invention is to provide an improved device.

[07] According to a first aspect of the invention, this object is achieved by a device having an emitter contact, a collector contact and a gap, the gap being such that frustrated total internal reflection occurs at the gap, the device being an integrated optical circuit is designed. Such a gap is referred to below as a nano-optical gap, the device as a nano-optical element.

[08] In the following, light is to be understood in the broader sense as electromagnetic radiation with optical properties and, in particular, also includes infrared and ultraviolet optics.

[09] The optical gap in surface structure and gap width is such that basically total optical reflection occurs, but due to the very small distance, a partial transmission of the photon current nevertheless takes place. The intensity of the transmission depends on nanoscopically small changes in the interface structure and in the width or effective optical width of the gap.

The relevant equations for the intensity of the locally transmitted photon current as a function of gap geometry, wavelength and angle of incidence of the photons and the photon wave are theoretically known in principle as a physical phenomenon. The equations for the photon current density in dependence from the width of the effective nano-optical gap can be found, for example, the patent DE 10039094 Cl.

[11] Such a device can be used for the quantitative high-resolution detection of very small movements, deformations, changes in distance and position changes in the range of a few nanometers and below and for the detection of physical and chemical quantities that are related to such detectable changes.

[12] The physical and chemical states or quantities related to the distance changes are, for example, forces, stresses, distortions, deformations, pressures or pressure differences, temperatures or temperature differences, radiation densities, physical fields, chemical concentrations, volume loadings in microporous structures, steric conformation of molecules or stereochemical differences, effects of chemical reactions in molecular layers, etc.

[13] While the overall structure according to the invention and in particular the manufacturing process differ fundamentally compared to previous publications, the physical conditions of the tunnelled photon transmission at the nano-optical gap remain unchanged. However, as a result of the first-time integration of the components, the invention makes it possible to carry out industrial applications on a large scale and to market the technology globally as a nano-mechano-optical converter or sensor.

[14] Thanks to the integrated design, mass production with the highest precision and a large number of pieces is possible at low cost. The production of the basically similar but multi-part precursors of nano-optomechanical sensors requires an individual filigree adaptation and calibration. Only the integration of the device according to the invention allows mass production with the highest At low cost, because it can be used on well-manageable, known from microelectronics and micro-electromechanics semiconductor technologies for the production of the components.

In addition to adapting the design to the requirements of high-precision and highly efficient manufacturing, adapting the system to the requirements of high-precision measurements and evaluations, integration of the system elements into compact microscopic assemblies adapted to the requirements of smart system integration is possible.

[16] Preferably, the size of the device is in the range of a few micrometers. Thus, the device according to the invention is significantly smaller than the previously composed of several components FTIR (Frustrated Total Internal Reflection) systems.

[17] It preferably has a measuring range from fractions of a nanometer up to a few nanometers. In this way, the smallest distances and changes in distance can be detected. On the basis of the nano-optical converter principle, however, other size ratios can also be represented.

A device according to the invention has in the system circuit diagram a number of interfaces, the contacts: the emitter contact for coupling in a photon current which is influenced in the device and then used further, and the collector contact for coupling out a transmitted photon current, the one Return to the size to be recorded allows.

[19] It is also advantageous if the device has a gap contact. This serves to couple in the signal to be detected, which influences the collector-photon current.

[20] The gap contact is used for the input of the signal to be sensed or further processed or the corresponding physical or chemical quantity, of the state or the field. As a result, the gap contact controls the optical gap width, be it by mechanical change of the geometric gap width or by refractive optical variation of the optical gap width by varying the refractive index at the gap. The gap contact thus controls the optical transmission at the nano-optical gap. This changes the transmission for a specific wavelength. Upon irradiation of a broad spectrum by the emitter, a wavelength-dependent transmission thus takes place. In this sense, the nano-optical gap in the nano-optical element also acts as an optical filter.

[21] The transmitted light is either coupled out of the opto-mechanical system or detected within the integrated system and, if necessary, transformed into a signal, or it operates another, for example, nano-optical system unit in the sense of an integrated at least partially optoelectronic system. mechanical circuit.

[22] Thus, the nano-optically active gap is embedded in an overall system. This includes the following steps: the supply of the photon current at the emitter contact, the removal of the transmitted photon current at the collector contact and the arrangement of signal conversion at the gap contact, which originally causes the changes to the optical gap width to be detected in the nano-optically active gap ,

[23] The gap can be filled with air or vacuum. The gap may also be made of a material of lower refractive index, such as a transparent solid. Alternatively, the gap may also be filled with a liquid medium. As a result, the effective optical gap width can be varied.

[24] Furthermore, the light-conducting regions on the sides of the gap can be doped by suitable doping. As a result, the light guides can be integrated on both sides of the gap. It is advantageous if the device has sensory inputs at the gap contact. This embedding, preferably on a single chip, is for system integration. [25] The device may further include a projection. This can be used as a light input coupler and / or light output coupler.

[26] It is advantageous if the device has mechanical recesses which are arranged so that they facilitate a change in the gap width. For example, cavities or fins can be provided which facilitate the deformation.

[27] Advantageously, an anisotropic material is used as the light-conducting material. In order to obtain the most focussed light beam in the light-conducting layer, it is possible on the one hand to work with collimated light on the input side; on the other hand, anisotropic materials are offered here so that the best possible light bundling is obtained by an anisotropic light guide parallel to the orientation. Such materials also have the advantage that in the production in the layer structure on a later adjustment, as they would be necessary if using integrated optical fibers, can be dispensed with.

[28] Further material can be removed from the structure of the component in order to set a higher sensitivity through cavities or a lamellar structure.

[29] It is advantageous if the device has a grid matrix at the gap.

[30] Advantageously, the device may have a measuring tip. Here, the gap and the measuring tip are arranged so that a deflection of the measuring tip affects the gap width. This makes it possible to measure the deflection of the measuring tip.

[31] The device may have a pressure chamber. This is also arranged so that a change in pressure causes a change in the gap width. Thus, a pressure measurement is possible over the gap width. In both forms of force measurement, the geometric gap width itself is deformed by means of mechanical force-dependent deformation, thereby changing the optical gap width for given wavelengths. The geometric structure of the device is chosen so that mechanical forces are converted into suitable reversible changes to the nano-optical gap.

[33] Another aspect of the invention includes a network with multiple devices, the network being integrated into a device. The devices may comprise linear elements e.g. in the form of fibers that can be connected to networks. A preferred application of these fibrous devices includes sensory areas at defined locations that enable detection of mechanical deformations and / or stresses on these areas. After integration of these nano-optical fibers into components, e.g. in load-bearing parts of aircraft, the spatial and temporal distribution of the load and deformation can be detected via the nano-optical network. This allows a precise analysis of the material load up to the early detection of incipient material damage in the nanoscopic range such as the finest cracks or dislocations in the nanometer range and below.

[34] In this case, the optical gap can be formed as a fluid channel. In the gap-shaped channel gases and / or liquids can be introduced. The changes in the refractive index of the fluid filling in the gap regions produces a change in the effective optical gap width. This allows an analysis of the optical properties of the liquid or an adaptation of the properties of the device to specific tasks.

In such an arrangement, in principle, the effect of the hydrostatic pressure on the deformation of the gap-shaped channels can be detected, because this changes the geometric gap width, depending on the mechanical rigidity of the channel construction. In the limiting case, a membrane construction is possible. [36] Generally speaking, in such arrangements, changes in the optical properties of the fluid and changes in the spatial extent of the optically active gap will overlap.

[37] Three or preferably six devices can be used to determine the six coordinates of the spatial orientation of a probe tip of a scanning nanoscope.

[38] The nanoscopic image is created by scanning the object using this sensory tip. The devices allow the detection of the three translational and three rotational components of the position vector, which describes the sensory tip. Thus, a highly accurate and very reliable detection of the position of the sensory tip with minimal noise can be displayed. The superiority of this nano-optical 3D nanoscope is reflected in the resolution and reproducibility as well as the freedom to choose the interaction that ultimately produces the image.

[39] An embodiment similar in design to the 3D nanoscope uses the ability to perform the sensory detection of the space vector to the manipulator tip with a certain separate wavelength range, while another independent waveband creates an optical radiation field that enables the positioning of the nanomanipulator. This is therefore the combination of an opto-mechanical positioning with a nano-optical position measurement.

[40] Assuming a design of the system that is suitable in detail, the manipulator tip alone can be mounted opto-mechanically, ie floating freely in the inhomogeneous optical radiation field. In a particularly preferred embodiment, a feedback from the signal of the nano-optical position sensors to the intensity of the opto-mechanical radiation field is integrated, so that the position of the manipulator tip can be controlled and stabilized with simple control commands. Based on the 3D nanomanipulator, a device for material influencing and / or material processing can be attached. The machining can be carried out with the highest accuracy in the nanometer range.

[41] A further aspect of the invention relates to a system with a device, wherein it has at least one opto-mechanical and / or electronic and / or photonic and / or electromechanical element. Opto-mechanical actuators, for example, allow the integration of additional actuator functions. Opto-mechanical actuators convert optical fields into mechanically effective quantities, in particular into forces or into mechanically effective potential fields. The opto-mechanical potential generation itself is known from optical tweezers (e.g., Ashkin 1990). Invention according to the integration of such opto-mechanical actuators in a nano-optomechanical system.

[42] The system may have an emitter-side light source. The system may also have a collector-side light sensor.

[43] The system may further include a transducer. These may be upstream converters which may be subject to a change in distance, e.g. in the nanometer range as well as around downstream transducers that use the transmitted photon current to perform another conversion, e.g. in electronic signals (e.g., by photoelectric effect) or in chemical signals (e.g., by photochemical effect, such as color change).

[44] A further aspect of the invention relates to a method for producing a device, wherein initially an intermediate carrier is applied based on a light-conducting material, then a further layer of light-conducting material is applied and finally a part of the intermediate carrier is removed again. In this case, methods of semiconductor technology are used, in particular a suitable layering in the context of a multilayer structure. The high-precision application defined Layers with defined refractive indices are known from semiconductor technology, eg epitaxy, targeted doping technologies, and physical and / or chemical etching and physical or chemical bonding technologies. According to the invention, totally reflecting gap layers can be produced in this way. By a high-precision manufacturing the required accuracies can be achieved.

[45] Advantageous is a method in which an opaque layer is applied between the conductive materials and partially removed again.

[46] The material can be removed in a subsequent step.

[47] Finally, a projection can be attached. This can serve as Lichteinkoppler and / or Lichtauskoppler.

[48] The gap can be etched by selective etching. Both physical and chemical etching processes can be used.

[49] It is advantageous if the gap region is formed from suitably modified material, which presents a lower resistance to etching than the edge region remaining after the etching, on which the gap rests.

[50] Alternatively or cumulatively, the gap can be formed by recessing a middle layer in the region of the gap and in a subsequent step by bonding the cover layer.

[51] Overall, the boundary layers consist of very fine and very smooth layers with suitable optical properties. The shape of the light guides is adapted to the beam geometry and the choice of refractive indices in the light path. An advantage is a method in which several devices are produced as one piece and this piece is then cut into smaller pieces, each with at least a single circuit. So a series production becomes possible.

[53] Finally, a final aspect of the invention relates to a method of measuring with a device, wherein a reference photon current is branched off and measured. This can be diverted for example in an integrated light source as an emitter of this. The reference photon current is proportional to the photon current of the emitter. The non-branched light drives the photon current at the emitter contact of the device.

The manufacturing process is feasible on conventional semiconductor devices and / or micro-electro-mechanical systems (MEMS). The production of such MEMS building blocks is known and described in many ways in principle. Thus, DE 10029012 C2 describes the structure and the production of such structures for electrically conductive substrates, without going into the applicability for optically conductive materials.

The invention will be explained in more detail by means of embodiments with reference to the drawings.

[56] show here:

FIG. 1 shows the schematic structure of a nano-optical element,

FIG. 2 shows the functional diagram of a nano-optical element,

FIG. 3, starting from FIG. 2, a circuit diagram extended by a converter,

FIG. 4 shows, starting from FIG. 3, a circuit diagram extended by photon input and output, FIG. 5 shows, starting from FIG. 4, an expanded circuit diagram in which a reference photon current is branched off,

FIG. 6 shows, starting from FIG. 5, an expanded circuit diagram, wherein a radiation field serves as the source of the sensory input,

FIG. 7 shows the principal multilayer structure of a nano-optical element,

FIG. 8 shows a modification of the construction from FIG. 7,

9 shows the basic structure of the nano-optical element in a linear, fibrous embodiment,

FIG. 10 shows a network of nano-optical elements, here in the form of fibers, as shown in FIG. 9,

FIG. 11 shows a spatial structure with more than one nano-optical element,

FIG. 12 shows the cross section through an arrangement as in FIG. 11,

FIG. 13 shows the arrangement from FIG. 11, supplemented by an integrated system for the opto-mechanical storage and manipulation of the tip,

FIG. 14 shows the stepwise method for producing a nano-optical component in multilayer structure,

FIG. 15 the production process of a layered structure,

FIG. 16 is a 3-D view of a plurality of devices produced as one piece;

FIGS. 17 a to d show various embodiments of the nano-optical element,

FIGS. 18 a to e show further embodiments of the nano-optical element, FIG. 19 shows a nano-optical element with a measuring tip,

FIG. 20 shows a nano-optical element with a pressure chamber.

[57] The nano-optical element 1 in Figure 1 consists of a predominantly compact material 2, e.g. a light guide or semiconductor, which may consist of several partially different areas or multiple layers. Furthermore, it has a light-conducting region 3 which, starting from the emitter contact 4, leads a photon current to the totally reflecting gap 5. The gap 5, which is at least partly totally reflective for light, is formed by two predominantly parallel interfaces 6 and 7, which are generally two-dimensional hypersurfaces of the three-dimensional space. The gap does not have to be flat.

The nano-optical element 1 also has a light-conducting region 8, which leads a transmitted photon current from the gap 5 to the collector contact 9. A variable element 10 causes a variation of the effective optical gap width in the gap. The effective distance that the gap 5 has in the area of the effective passage of light is a function of the geometric distance, the beam angle and the refractive indices.

[59] Figure 2 shows a nano-optical element as a functional diagram. This shows the nano-optical device 11 as a compact chip. At the emitter contact 13, the photon current 15 is fed. The optical waveguide 12 guides it from the emitter contact 13 to the nano-optically active gap 14. At the gap, the influence 16 on the gap contact 17 influences the effective gap width and thus the transmitted photon current. The optical waveguide 18 in turn conducts the transmitted photon current from the gap 14 to the collector contact 19. Finally, the photon current 20 leaves the collector contact 19. FIG. 3 shows the circuit diagram in FIG. 2 extended by the following elements: a transducer 21 for generating the change of the effective gap width in the gap 14 at sensory input 22 to the transducer 21, for example force, pressure and the source 23 of the sensory input , for detecting the field, object, condition, etc.

[61] Figure 4 shows the circuit diagram of Figure 3, extended by the following elements: the photon input 24, e.g. the light source or the connection to a preceding one, in particular as a transducer of energy in photons with suitable beam properties for the operation of the nano-optical element, the energy flow 25 for driving the photon generator or the photon converter, the energy source 26, the photon output 27, e.g. as a photoelectric element or as an input to the subsequent emitter contact, in particular as a transducer of the photon current in a sensory output, the information stream 28 and optionally also energy flow from the output transducer to the receiver 29 of the sensory output.

[62] Figure 5 shows the circuit diagram of Figure 4, extended by the following elements: the reference photon current 30 for calibration and measurement of the transmitted photon current 18 at the collector contact 19. This involves a partial tap of a proportional photon current density from the photon current 15 at the emitter contact 13 and the coupling of this photonic signal in the transducer 27 for determining the relative transmission at the gap 14 on the basis of the measurable photon current at the collector 19. Thus, the device and the system, regardless of the quality of the stabilization of the photon current in the emitter.

FIG. 6 shows the circuit diagram as in FIG. 5, expanded by the following elements: the source of the sensory input is a radiation field 31. The converter 32 generates the variable gap width therefrom and modulates the transmitted photon current 18 at the collector 19 accordingly. This circuit diagram is similar to that of a transistor, wherein in the transistor instead of the gap contact 17 of the base contact is designed as a control contact, without integration of the nano-optical converter.

The gap contact 17 can be fed via a photon-sensitive element, the transducer 32, which effects a change in the optical gap width in the nano-optical converter as a function of the photon current or of a radiation density. In this case, 17 different photon fields can be used for the control of the gap contact, regardless of the type of photon field that feeds the emitter contact 13.

[65] In this way, a nano-optical phototransistor constructed in this way differs fundamentally from a conventional transistor. In the conventional transistor, the field types at the emitter contact and at the base contact are identical, e.g. both are electronic in nature. In the nano-optical transistor, e.g. the field type at the emitter contact 13 is in the range of infrared light or visible light, the field type at the nano-optical gap contact 17 may independently be a high-energy radiation field, e.g. cosmic radiation, X-radiation, etc. or a low energy radiation field, e.g. Radio waves, microwaves, etc.

Basically, according to this general structure, it is also possible to connect converter types at the gap contact 17, which can detect a hitherto unknown form of a physico-chemical field and convert it into the smallest changes in the optical gap width at the nano-optical gap. This includes, in particular, the ability to detect physical and chemical states, fields and quantities (for example, quantitatively or qualitatively) with the aid of the integrated nano-optical converter, which hitherto could not be detected with other methods and devices.

[67] FIG. 7 shows the principal multilayer structure of a nano-optical element 41. This consists predominantly of a solid block 42 of small size, for example, semiconductor material or other suitable material, preferably from several different levels (so-called multi-layer). Furthermore, it has a doped region 43, which receives the suitable shape and the light-conducting properties of the emitter in particular by doping. The gap 44 is either designed without solid material, evacuated or filled with a fluid. The gap forms, for example, a channel and is generated in particular in the course of the stepwise layer structure.

The nano-optical element 41 has a further doped region 45 which, in particular, receives the suitable shape and the light-conducting properties of the collector by doping.

[69] The spacer layer 46, consisting of at least one solid region, is influenced in its thickness by the influence of the quantities, states or fields to be determined.

[70] The stepwise layer structure may also include physical etching, chemical etching, and bonding.

FIG. 8 shows a modification of the structure of FIG. 7. In this nano-optical element 51, the gap 54 does not consist of an empty or gas-filled space (which would have a refractive index of approximately 1.0) but of a solid layer suitable, preferably very low refractive index. The thickness of this layer can be z. B. by influencing change by changing the geometric thickness and / or the optical thickness changes above the refractive index. In this embodiment, no channels are required to create the gap. The spacer layer itself acts as a nano-optical gap in this case. Otherwise, the nano-optical element 51 remains the same or similar in construction. It is also a solid block 52 with 2 doped regions, an emitter 53 and a collector 55. [72] Figure 9 shows the basic structure of a nano-optical element 61 in a fibrous, preferably linear configuration. This also consists of a predominantly compact material 62, which is designed here as an enclosing jacket, but this is elastically and / or plastically deformable in particular in the region of the nano-optical gap. The light-conducting region 63 is embodied here as a core fiber which, starting from the emitter contact 64, leads a photon current to the totally reflecting gap 65.

[73] The elasticity and plasticity of core fiber 63 and fiber sheath 62 are tuned so that deformations of the entire fiber structure lead to a change in the opto-mechanical gap width. The detection of the thereby variable photon signal then serves to analyze the mechanical deformations that have led to the deformation of the nano-optical gap.

[74] The gap 65, which is at least partially totally reflective for light, is delimited by two predominantly plane-parallel interfaces, which are generally two-dimensional hypersurfaces of three-dimensional space. The gap 65 does not have to be flat. The light-conducting region 63, here embodied as core fiber, carries a transmitted photon current farther from the gap 65 to the collector contact 66. The width of the gap 65 in the core fiber 63 changes as soon as a deformation of the shell 62 occurs. The deformation can be elastic and / or plastic.

FIG. 10 shows a network 71 of nano-optical elements, which are embodied in a fibrous manner as shown and described in FIG. This network has a plurality of nano-optical elements 72, 73, 74, 75, 76 and 77. These are connected via light guide 78 with the photon input 79, which supplies the components. The nano-optically active columns 80, 81, 82, 83, 84 and 85 are assigned a spatial position. [76] Another light guide 86 leads from the nano-optical components to a collector center 87 or to a plurality of collectors, which are evaluated with assignment to their spatial position.

[77] Such or equivalent arrangement allows z. B. the spatial analysis of stresses, deformations and material damage.

[78] Figure 11 shows a spatial structure 91 with more than one nano-optical gap in the embodiment with more than one nano-optical element. Only two of the four columns point to the front and are visible.

[79] For this purpose, it has a common carrier 92 for the emitter-side boundary surfaces of several nano-optical elements. In this case, the emitters 93 and 93 'are supplied via the light path 94 and 94'. The nano-optic elements 95 and 95 'are formed at defined locations by approximating the emitter-side and collector-side interfaces.

[80] Optical fibers 96 and 96 'lead from the nano-optical elements to the collectors 97 and 97', the z. B. can be evaluated with assignment to the spatial position. For example, this embodiment may include an annular support 98 having the collector-side interfaces.

[81] By way of example, a pyramid tip 99 may be designed in the emitter-side carrier, the position of which can be detected relative to the collector-side counterpart.

[82] The interfaces of the nano-optic gaps 95 and 95 'are in known fixed spatial relationship to each other, for example by mounting in a common carrier 92 with z. The tip 99 is surrounded by a comprehensive collector ring 98. From the cross-linking evaluation of the transmittierten photon streams 96 and 96 'at the plurality of collectors 97 and 97' can be closed on the relative position of the carrier 92 and the tip 99 become. The assignment tion of emitters 93 and 93 'into the center piece of the carrier 92 with tip 99 and the collectors 97 and 97' in the ring piece 98 can also be reversed, ie the ring piece 98 can also be equipped with emitters 93 center piece 92 and accordingly with collectors 97 or alternating.

11 shows a cross-section through an arrangement 91 as shown in FIG. 11 with four nano-optical columns, of which two 95 and 95 "are again visible, the center piece carrying the emitters 93 and 93 as a common carrier 92. the ring piece 98 carries the collectors 97 and 97. The figure shows in the sectional plane two of the four nano-optical elements each with emitter, gap and collector 93, 95, 97 and 93 ", 95", 97 "and the two Collector beams 96 'and 96' "in the plane perpendicular to the cutting plane.

[84] Further, a total reflecting facet 100 is integrated into the collector side ring 98 to provide a deflection of the photon current to the collectors 97 and 97 ".

[85] Figure 13 shows the exemplary arrangement of Figure 11, supplemented by an integrated system for optomechanical storage and manipulation of the tip. In this case, photon radiators 101, 101 ', 101 "and 101'" are provided for establishing an inhomogeneous photon field and thus a potential field, which makes possible the mounting of the carrier 92 and the manipulation of the tip 99. Shown are photon currents in the section plane and in the plane perpendicular thereto. The position of the tip 99 is detected by evaluating the transmitted photon streams 96, 96 ', 96 "and 96'".

The feedback of the position to the intensity and / or the direction of the photon streams 101, 101 ', 101 "and 101'" enables the targeted manipulation of the tip 99 relative to the position of the ring part 98 in three-dimensional space. [87] Figure 14 shows the stepwise process for producing a nano-optical device with nano-optical gap in multi-layer structure. FIG. 14 a) shows a first layer 111 as the basis for the structure, in FIG. 14 b) the collector layer 112 is constructed thereon. In FIG. 14c), the collector-side light-conducting region 113 is produced. In FIG. 14d), the construction of the gap layer 114 takes place. If a gap channel is used, this step can consist of several substeps, including doping, etching, etc. In FIG. 14 e), the emitter layer 115 is built up. In FIG. 14 f), the emitter-side light-conducting region 116 is produced. In FIG. 14 g), the layer structure is completed by a further base layer 117.

[88] Various variations of the method for constructing the multi-layer structure can be carried out within the scope of the invention. In particular, regions with gradient index can be integrated, for. B. by means of successive thin layers. Furthermore, the sequence of the layer structure can be reversed and started with the emitter. Finally, the emitter side and collector side can first be constructed separately and then bonded or otherwise joined together to form the gap.

[89] Also, Figure 15 shows a possible, advantageously layer-wise manufacturing method of a nano-optical element. On the basis of a non-conductive material 121 (FIG. 15 a), an opaque layer 122 can optionally be applied, for example by vapor deposition (FIG. 15 b). This layer 122 is again partially released, as shown in FIG. 15 c), ideally as a grid or matrix grating 123, for example by milling or etching.

[90] In order to produce the gap geometry, an intermediate support 124 is coated over it (FIG. 15 d) and a further layer of a light-conducting material 125 is applied (FIG. 15 e). [91] A part of the intermediate support 125 is then removed by suitable methods such as etching, so that a gap 126 is formed (FIG. 15 f).

[92] As shown in Figure 15 g) a lamellar structure can be created by optional removal of material or cavities such as 127 and 128 can be produced. Finally, a light coupler 129 and a light output coupler 130 for the vertical light exit can be attached.

[93] FIG. 16 shows a three-dimensional nano-optical wafer 120 shown in cross-section in FIG. 15 h). It can be seen here that it can be produced continuously in the longitudinal axis and can be cut into individual components accordingly. This also has all the constituents: Based on the light-conducting material 121, an opaque layer 122 is partially applied in the form of a grid 123. In addition, the intermediate carrier 124 and the gap 126 are partially arranged. At the top, the layer structure is closed again by another layer of light-conducting material 125. The light-conducting material has both cavities 127 and 128 on both sides as well as projections as Lichteinkoppler 129 and Lichtauskoppler 130.

[94] FIG. 17 shows various embodiments of the nano-optical element. The figures 17 a) and b) show nano-optical elements in block construction, whereas FIGS. 17 c) and d) show fiber-optic nano-optical elements.

[95] In the nano-optical element 131 in FIG. 17 a), the light path in the light-conducting material 132 is illustrated by the arrows 133 and 134. In this case, the material enters the light-conducting material 132 instead of 131 and is first reflected on a totally reflecting facet 135 for the first time and thereby deflected in the direction of the gap 136. [96] The light transmitted at the gap 136 is then deflected again at a second total reflecting facet 137 and leaves the light guide 132 in the direction of the arrow 134.

In the case of the nano-optical element 141 in FIG. 17 b), the light is coupled into the light guide 142 with the aid of a light inserter 143. The light enters the light guide 142 via the light inserter 143, becomes at the gap 147 totally reflected and only the transmitted photon current continues in the optical waveguide and is coupled out of the optical waveguide by the light output coupler 144. The arrows 145 and 146 and the line extending between them indicate the light path.

In the case of the nano-optical element 151 made of a light guide 152, the optical gap 153 is inserted in the form of a cube 154. Again, arrows 155 and 156 indicate the incoming and the transmitted light.

[99] In the light-conducting element 161 in FIG. 17 d), the gap 162 is integrated into the light guide 163. Again, the arrows 164 and 165 indicate the incoming and the transmitted light.

FIG. 18 shows exemplary embodiments for the layer structure of nanooptical elements in the block structure up to the thinning of the bearing at the bending tongue.

[101] FIG. 18 a) shows a nano-optical element 171 consisting of a one-piece light guide 172, which has a gap 173.

In contrast, the nano-optical element 181 in FIG. 18 b) consists of two light guides 182 and 183, wherein the upper light guide 183 has a recess through which the gap 184 is formed. [103] A light-conducting element 191 is shown in FIG. 18 c). This has between two different light guides, the lower light guide 192 and the upper light guide 193, an intermediate layer 194, which serves as a placeholder for the gap 195. This intermediate layer can either be only partially applied or removed again by etching the gap.

FIG. 18 d) shows an embodiment of the nano-optical element 201 in which both the lower light guide 202 and the upper light guide 203 are partially thinned out by a recess 204. This leads to an easier deformability of the two light guides 202 and 203. A change in the gap width of the gap 205 is facilitated. This increases the sensitivity of the nano-optical element 201. The nano-optical element 201 also has an intermediate layer 206.

[105] In the nano-optical element 211 in FIG. 18 e), although the upper optical fiber 213 is integrally formed, the lower optical fiber 202 is divided into two pieces into a left piece 203 and a right piece 204. These pieces are connected only by a connection layer 205. As a result, the stability of the lower light guide 202 against bending is significantly reduced and the optical gap width is thereby easier to change, which increases the measurement accuracy. The optical gap 206 is again formed by means of an intermediate layer 207.

FIG. 19 shows a nano-optical microscope sensor in probe form 221.

This also consists of two light guides, the lower light guide 222 and the upper light guide 223. In between is formed with an intermediate layer 224 nano-optical gap 225. In addition, the lower light guide 222 has a measuring tip 226 on. The arrows 227 and 228 with the dashed line between them indicate the light path. The light is coupled into the nano-optical element at arrow 227 and deflected for the first time at the totally reflecting interface at point 229. At the cavity 230 there is no deflection, but the light away simply continues to gap 125. The transmitted to this light is now redirected at the totally reflecting outside 230 of the upper light guide 223 and leaves the nano-optical element in the position of the arrow 228th

In this case, the cavity 231 serves for the easier bendability of the measuring tip 226 and thus increases the sensitivity of the measuring arrangement. When a force is applied to the tip 226, the width of the nano-optic gap 225 changes, resulting in a change in the intensity of the transmitted photon current.

Finally, FIG. 20 shows a pressure sensor with a nano-optical gap. The pressure sensor 241 also consists of a lower optical fiber 242 and an upper optical fiber 243. While the optical gap 244 is formed in the lower optical fiber 242, the upper optical fiber 243 has a pressure chamber 245. This is separated by an intermediate layer 246 from the nano-optical gap in the lower light guide 242. Again, arrows 247 and 248 represent the light entering the nano-optic element and the transmitted light exiting therefrom. The dashed line between them shows the light path. This runs straight up to the optical gap 244. The transmitted light from this is then deflected at a facet 249 by total reflection and leaves the nano-optical element 241 at the location of the arrow 248th

Claims

claims:

1. Device having an emitter contact, a collector contact and a gap, wherein the gap is such that at the gap frustrated total internal reflection occurs, characterized in that the device is designed as an integrated optical circuit.

2. Apparatus according to claim 1, characterized in that it has a size in the range of a few nanometers.

3. Apparatus according to claim 1 or 2, characterized in that it has a measuring range of fractions of a nanometer up to a few nanometers.

4. Device according to one of claims 1 to 3, characterized in that it comprises a gap contact.

5. Apparatus according to claim 4, characterized in that it has sensory inputs on the gap contact.

6. Device according to one of the preceding claims, characterized in that the gap is filled with air or vacuum.

7. Device according to one of the preceding claims, characterized in that the gap is filled with transparent solid.

8. Device according to one of the preceding claims, characterized marked, that the gap is filled with liquid medium.

9. Device according to one of the preceding claims, characterized in that it comprises a projection.

10. Device according to one of the preceding claims, characterized in that light-conducting regions are doped on sides of the gap.

11. Device according to one of the preceding claims, characterized in that it comprises mechanical recesses which are arranged so that they facilitate a change in the gap width.

12. Device according to one of the preceding claims, characterized in that a light-conducting material is an anisotropic material.

13. Device according to one of the preceding claims, characterized in that it has a grid matrix at the gap.

14. Device according to one of the preceding claims, characterized in that it comprises a measuring tip.

15. Device according to one of the preceding claims, characterized in that it comprises a pressure chamber.

16. Network with a plurality of devices according to one of claims 1 to 15, characterized in that the network is integrated into a component.

17. System with a device according to one of claims 1 to 15, characterized in that it comprises at least one optomechanical and / or electronic and / or photonic and / or electromechanical element.

18. System according to claim 17, characterized in that it comprises an emitter-side light source.

19. System according to claim 17 or 18, characterized in that it has a collector-side light sensor.

20. System according to any one of claims 17 to 19, characterized in that it comprises a transducer.

21. A method for producing a device according to one of claims 1 to 15, characterized in that initially an intermediate carrier is applied based on a light-conducting material, then a further layer of light-conducting material is applied and finally a part of the intermediate carrier is removed again ,

22. The method according to claim 21, characterized in that applied between light-conducting material, an opaque layer and partially removed again.

23. The method according to claim 21 or 22, characterized in that material is removed in a subsequent step.

24. The method according to any one of claims 21 to 23, characterized in that at least one projection is attached.

25. The method according to any one of claims 21 to 24, characterized in that the gap is etched by selective etching.

26. Method in particular according to one of claims 21 to 25, characterized in that the gap is formed by cutting out a middle layer in the region of the gap and in a subsequent step by bonding the cover layer.

27. The method according to any one of claims 21 to 26, characterized in that a plurality of devices are produced as one piece and this piece is then cut into smaller pieces, each with at least a single circuit.

28. A method of measuring with a device according to one of claims 1 to 15, characterized in that a reference photon current is branched off and measured.