WO2010033127A1 - Pixel hybride monolithique à réponse améliorée - Google Patents

Pixel hybride monolithique à réponse améliorée Download PDF

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Publication number
WO2010033127A1
WO2010033127A1 PCT/US2008/077209 US2008077209W WO2010033127A1 WO 2010033127 A1 WO2010033127 A1 WO 2010033127A1 US 2008077209 W US2008077209 W US 2008077209W WO 2010033127 A1 WO2010033127 A1 WO 2010033127A1
Authority
WO
WIPO (PCT)
Prior art keywords
pixel
detector
detector element
wavelengths
pixels
Prior art date
Application number
PCT/US2008/077209
Other languages
English (en)
Inventor
Kenton Veeder
Original Assignee
Sionyx, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sionyx, Inc. filed Critical Sionyx, Inc.
Priority to PCT/US2008/077209 priority Critical patent/WO2010033127A1/fr
Publication of WO2010033127A1 publication Critical patent/WO2010033127A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80—Camera processing pipelines; Components thereof
    • H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/047—Picture signal generators using solid-state devices having a single pick-up sensor using multispectral pick-up elements

Definitions

  • the present disclosure relates to the detection of electromagnetic radiation, and more particularly, to methods and articles for detecting such radiation using monolithic or hybrid semiconductor-based designs that have improved response to incident radiation.
  • Pixels are the basic light- or color-detection and display elements that form a digital image.
  • Typical digital video and imaging systems use a collection of detector pixels to capture a two-dimensional image field at a capture end (such as a camera) and another corresponding collection of display pixels to display the corresponding two-dimensional image at a display end (such as a monitor).
  • an array of light-sensitive pixels each including a light sensor or detector, respond to an intensity of incident light at each pixel location, providing an electrical output representative of the incident light.
  • the output of an imager can be referred to as an image.
  • Motion or video cameras repeat the process described above, but permit a time-sequence to be captured, for example at regular intervals, so that the captured images can be replayed to recreate a dynamic scene or sequence.
  • Most film and digital pixel imagers include wavelength-specific sensors or detectors.
  • the chemical composition of the film or the design of the digital pixels and associated filters determines the range of wavelengths of light to which the film or pixels respond.
  • a detector or imager has a frequency response that is optimized to provide images of light in the range of wavelengths the imager is designed for.
  • the most common examples are sensitive to visible light (e.g., red, green, blue, and combinations thereof).
  • Visible light corresponds to the range of wavelengths of electromagnetic radiation to which our eyes are sensitive, and is generally in the range of 400 to 750 nanometers (nm)
  • Special film and digital pixel imagers are designed for low -light operation to provide night vision capability for military, security, or other special applications in which an illumination source is not available to cause a visible light image
  • IR detection is more suited for picking up heat emissions from objects such as a person's body or a vehicle IR radiation itself can be roughly divided into sub spectra including the near-infra-red (NIR) having wavelengths between about 750 to 1100 nm, short wave-infra-red (SWIR) having wavelengths between about 1100 and 2500 nm, medium wave-tnfra-red (NtWIR) having wavelengths between about 2500 and 8000 nm, and long-wave- infra red (LWIR) having wavelengths between about 8000 and 12000 nm.
  • IR imagers are usually less sensitive than would be desired, lack color definition, and have limited frequenc ) response
  • low-light imagers can be more costly, noisy, and require greater circuit resources than visible light imagers to achieve useful gains in low signal conditions
  • IR sensors are larger tJian would be desired for compact portable applications because most IR sensitive materials must be cooled significantly to achieve good performance
  • Most sensors that can detect long- wavelength portions of the electromagnetic spectrum remain poor at detecting visible light, especially in the short-wavelength portions of the spectrum, for example blue and violet light.
  • present imaging sensors and pixels do not sufficiently capture the full range of wavelengths useful for developing good images across long and short wavelength portions of the spectrum, and improved detector designs and readout circuit integration is needed for such detectors.
  • Embodiments hereof provide silicon-based imagers and detector elements capable of imaging across a range of electromagnetic wavelengths, including in various portions of the IR spectrum and in a wide range of lighting conditions Additionally, the present embodiments provide compact, thin designs that offer increased sensitivity and resolution at a lower cost flian presendy available systems. Embodiments hereof provide improved manufacturing and process handling capability for producing the detectors and for implementing readout circuits associated therewith
  • a specific embodiment hereof is directed to a light-sensing pixel for detecting at least a portion of the electromagnetic spectrum, including a first detector element having a laser-treated detector portion for detecting a first range of wavelengths of the electromagnetic spectrum; a second detector element for detecting a second range of wavelengths of the electromagnetic spectrum, a collection point for accumulating a first electrical output of said first detector element as well as a second electrical output of said second detector; a bias point for applying a biasing voltage to said first detector element and capable of affecting the first electrical output of said first detector element; and an output point for providing an electrical output of said light-sensing pixel
  • Another embodiment hereof is directed to a light-sensitive array comprising a plurality of pixels as described above, wherein said plurality of pixels each provides an electrical output that can be addressably sensed and contributes to a collective output of said array.
  • Yet another embodiment is directed to an imaging apparatus comprising an array of pixels as described above such that an image corresponding to said collective output of said array or pixels can be captured or d&played.
  • Fig. 1 illustrates an exemplary light-sensing pixel including a black silicon detector element
  • Fig. 2 illustrates an exemplar ⁇ 7 bght-sensing pixel including both a black silicon detector element and another detector element which can be hybridized onto the pixel for enhanced response;
  • Fig. 3 illustrates an exemplary cross -sectional view of a response enhanced pixel.
  • the present disclosure describes systems and articles of manufacture for providing light sensors, pixels, detectors, or imagers and methods for making and using the same Fhese methods and apparatus are useful in many applications, including applications benefiting from imaging in a variety of light conditions,.
  • the detectors and techniques provided herein can be adapted to small, inexpensive, low-power, portable applications such as hand-carried, helmet- mounted and similar applications.
  • Some or all embodiments hereof include a sensor or detector sensitive to certain electromagnetic wavelengths and formed into a device on a semiconductor substrate.
  • the detector includes a portion comprising a semiconductor material, for example silicon, which is irradiated a short pulse laser to create modified micro- structured surface morphology lne laser processing can be the same or similar to that described in U.S. Patent No. 7,057,256 to Carey et a!, which is hereby incorporated by reference
  • the laser- processed semiconductor is made to have advantageous light-absorbing properties In some cases this type of material has been called "black silicon" due to its visually darkened appearance after the laser processing and because of its enhanced absorption of light and IR radiation compared to other forms of silicon.
  • the wavelength of the irradiating laser pulse for making black silicon, its fluence, and pulsewidth can affect the morphology of the micros rractured surface
  • the laser fluence may be between about 1 5 kj/m 2 and 12 kj/ rrf, but can vary depending on the substrate composition.
  • the choice of the fluence of laser pulses irradiating a silicon wafer to generate a microstructured layer therein can also affect the gettering performance (capacity and/or specificity) of a microstructured substrate,
  • the laser pulse fluence is selected to be greater than about 3 kj/m 2 .
  • the fluence may be chosen to be in a range of about 3 kj/ m 2 to about 10 kj/ m 2 , or a range of about 3 kf/ m 2 to about 8 kj/ m 2 .
  • the laser pulse length can affect the morphology and absorption properties of the treated silicon.
  • Irradiation of a substrate according to the invention can be with femtosecond laser pulses or picosecond or nanosecond pulses.
  • Other factors that can affect mtcrostructures morphology include laser polari2ation and laser propagation direction relative to the irradiated silicon surface
  • the laser micros compturing of a substrate is performed in the presence of a mixture of two or more substances where needed to accomplish the present purposes
  • silicon samples treated in the presence of a mixture of SF 6 and Cl 2 exhibit an increase in the microstructure density at higher partial pressure of SF r
  • FIG. 1 illustrates an exemplary pixel 100 comprising a photonic detector 110 of the laser-treated type described above (sometimes referred to as 'black silicon' detector) which can be integrated into a same substrate as the readout circuitry for the pixel Radiation in certain wavelength ranges incident on pixel 100 is detected by detector 110 and creates a corresponding current l BS) 115, which represents an electrical output, to flow from the detector.
  • a direct in j ection detector bias 120 is applied to hold a relatively constant voltage across the detector 110
  • Integration capacitance C inr , 150 which may be physical or parasitic and represents a collection point, integrates the charge collected by flow of current 1 BS) 125 through the capacitor 150 over some time
  • currents 125 and 115 are equivalent and integrate on C int , 150
  • a resultant output is provided at the input of signal buffer 160, which represents an output point Contact post 130 in this exemplary embodiment is not used but may be exposed at the surface of pixel 100, and can be used as will be described below to couple to a hybridized detector element to enhance the response of a pixel
  • Signal buffer 160 is addressed by column 190 and row enable switch 180 for nondestructive reading of pixel 100
  • a source follower buffer, row switch, and column line are merely examples of a generally -realizable output port, which here includes circuit elements 160, 190, and 180 only bv way of example
  • a reset switch 170 shorts out capacitor 150 thus resetting the collection process
  • detector 110 is reverse biased by the bias voltage applied to
  • the pixel 100 and its laser-treated detector 110 allow for detection and sensitrvitv to long wavelength radiation including in ranges beyond the visible range of the electromagnetic spectrum, such as the near infra red or the infra-red ranges
  • Fig. 2 illustrates an exemplar ⁇ response enhanced pixel 200 having both a first laser-treated detector element 210 similar to those described above, but also includes another light sensitive detector element 240.
  • Second detector 240 may be sensitive to a range of the electromagnetic spectrum that is different £r om the range of wavelengths that first detector 210 is sensitive to. For example, second detector 240 may be sensitive to shorter wavelengths than first detector 210. More specifically, second detector 240 may be sensitive to wavelengths nearer the blue light or ultraviolet (short) wavelengths of the visible spectrum As will be described below, this can allow for an overall pixel 200 that has sensitivity to a broad range of wavelengths ranging across those detected by first detector 210 (e.g. longer wavelengths) to those detected by second detector 240 (e.g. shorter wavelengths).
  • a first current or electrical output i BSl 215 from first detector 210 as well as a second current or electrical output i ( !vb 245 from second detector 240 are summed and cause an integrated collected charge on collection point or capacitor C )nt 230 to develop an output voltage at output point or signal buffer 250.
  • the pixel 200 can be addressed and read on column 280 and row enable 270 and can contribute to an array of pixels 200 in an imaging product as discussed earlier.
  • a reset switch 260 can be provided to zero out or reset or short out integration capacitor C mt 230.
  • an generic output port can be used in the present context, of which the present embodiment includes circuit elements 250, 270, and 280 only by way of example.
  • the second detector element 240 may be hybridized over a monolithic pixel array using the previously-unused post 130 of Fig. 1.
  • the second detector 240 can be selected and constructed such that it provides a great enough output resistance to the circuit of Fig. 2 so that a change in voltage on capacitor C 1n , 230 not to substantially affect the generated photocurrent i Ifvb 245 of second detector 240.
  • the combination of the detected light and corresponding outputs of detectors 210 and 240 can be used to form enhanced response pixels and enhanced response imaging products having a plurality of pixels such as the exemplary pixel of Fig, 2.
  • Such imaging products can couple a grid of pixels 200 in a two-dimensional format to form sensors such as cameras and scanners that are responsive to a wide range of electromagnetic wavelengths.
  • the output voltage at non-destructive signal buffer 250 will thus correspond to, and in some cases be a function of, the photon flux detected at each detector element, 210, 240
  • the structure of the present monohtktc- hybrid pixels and the low reverse bias voltages required to b ⁇ as the black silicon detectors allows selective shutting off of the black silicon detectors in situ. That is, the detectors 110 and 210 of Figs. 1 and 2 mav be secured by proper application of bias voltage at terminals 120 and 220, respectively. In the example of the pixel 200 of Fig. 2, this can be used to provide unique and useful integration qualities to pixel 200, a ⁇ d can provide useful discrimination in color detection by pixel 200.
  • the non-destructive read buffer 250 allows varying integration times without destroying or losing the collected charge on integration capacitor C mt 230.
  • the present pixels provide multi-color sensing, multi-integration sensors that enhance the overall response and usefulness of an associated sensing array or imaging product,
  • FIG. 3 illustrates a representative cross-sectional view of an exemplar ) * response-enhanced pixel 300 similar to that described earlier with respect to Fig. 2-
  • the present laser treated silicon is compatible with most standard CMOS readout circuit substrates, and can leverage known silicon MEMS and amorphous silicon MEMS technologies such as silicon MEMS cantilever technology.

Abstract

L'invention concerne un pixel détectant la lumière comprenant plusieurs éléments de détecteur, chacun étant sensible à une plage de longueurs d'ondes du spectre électromagnétique. Les détecteurs sont agencés dans un circuit de lecture qui peut être construit sur un produit semi-conducteur monolithique, de telle sorte qu'un ou plusieurs des détecteurs puissent être activés ou désactivés pour inclure ou exclure une contribution de sortie desdits détecteurs et améliorer la réponse du pixel. De plus, les détecteurs peuvent comprendre un capteur à semi-conducteurs traité au laser pour une détection efficace du rayonnement dans une ou plusieurs régions du spectre. Des matrices et des produits d'imagerie utilisant ces pixels sont décrits.
PCT/US2008/077209 2008-09-22 2008-09-22 Pixel hybride monolithique à réponse améliorée WO2010033127A1 (fr)

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013072694A1 (fr) 2011-11-15 2013-05-23 Xention Limited Thiéno- et furo- pyrimidines et pyridines, convenant comme inhibiteurs du canal potassium
WO2013072693A1 (fr) 2011-11-15 2013-05-23 Xention Limited Thiéno[2,3-c]pyrazoles destinés à être utilisés comme inhibiteurs des canaux potassiques
EP2684221A2 (fr) * 2011-03-10 2014-01-15 Sionyx, Inc. Capteurs tridimensionnels, systèmes et procédés associés
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673250B2 (en) 2013-06-29 2017-06-06 Sionyx, Llc Shallow trench textured regions and associated methods
US9741761B2 (en) 2010-04-21 2017-08-22 Sionyx, Llc Photosensitive imaging devices and associated methods
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
US9761739B2 (en) 2010-06-18 2017-09-12 Sionyx, Llc High speed photosensitive devices and associated methods
US9905599B2 (en) 2012-03-22 2018-02-27 Sionyx, Llc Pixel isolation elements, devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
EP3917133A1 (fr) * 2020-05-27 2021-12-01 Samsung Electronics Co., Ltd. Capteur hybride visible/nir et lwir doté d'un microbolomètre résistif

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US20070051876A1 (en) * 2005-02-25 2007-03-08 Hirofumi Sumi Imager

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US5751005A (en) * 1996-12-20 1998-05-12 Raytheon Company Low-crosstalk column differencing circuit architecture for integrated two-color focal plane arrays
US20030029495A1 (en) * 2001-05-25 2003-02-13 President And Fellows Of Harvard College Systems and methods for light absorption and field emission using microstructured silicon
US20070051876A1 (en) * 2005-02-25 2007-03-08 Hirofumi Sumi Imager

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US10741399B2 (en) 2004-09-24 2020-08-11 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10361232B2 (en) 2009-09-17 2019-07-23 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US10229951B2 (en) 2010-04-21 2019-03-12 Sionyx, Llc Photosensitive imaging devices and associated methods
US9741761B2 (en) 2010-04-21 2017-08-22 Sionyx, Llc Photosensitive imaging devices and associated methods
US9761739B2 (en) 2010-06-18 2017-09-12 Sionyx, Llc High speed photosensitive devices and associated methods
US10505054B2 (en) 2010-06-18 2019-12-10 Sionyx, Llc High speed photosensitive devices and associated methods
CN106158895B9 (zh) * 2011-03-10 2019-12-20 西奥尼克斯公司 三维传感器、系统和相关的方法
KR20200123489A (ko) * 2011-03-10 2020-10-29 사이오닉스, 엘엘씨 3차원 센서, 시스템, 및 관련 방법
KR102586396B1 (ko) * 2011-03-10 2023-10-10 사이오닉스, 엘엘씨 3차원 센서, 시스템, 및 관련 방법
KR101833269B1 (ko) 2011-03-10 2018-02-28 사이오닉스, 엘엘씨 3차원 센서, 시스템, 및 관련 방법
KR20220061274A (ko) * 2011-03-10 2022-05-12 사이오닉스, 엘엘씨 3차원 센서, 시스템, 및 관련 방법
KR102394088B1 (ko) 2011-03-10 2022-05-03 사이오닉스, 엘엘씨 3차원 센서, 시스템, 및 관련 방법
KR102170984B1 (ko) 2011-03-10 2020-10-29 사이오닉스, 엘엘씨 3차원 센서, 시스템, 및 관련 방법
EP2684221A2 (fr) * 2011-03-10 2014-01-15 Sionyx, Inc. Capteurs tridimensionnels, systèmes et procédés associés
CN106158895B (zh) * 2011-03-10 2019-10-29 西奥尼克斯公司 三维传感器、系统和相关的方法
KR20190110634A (ko) * 2011-03-10 2019-09-30 사이오닉스, 엘엘씨 3차원 센서, 시스템, 및 관련 방법
EP2684221A4 (fr) * 2011-03-10 2014-08-20 Sionyx Inc Capteurs tridimensionnels, systèmes et procédés associés
CN106158895A (zh) * 2011-03-10 2016-11-23 西奥尼克斯公司 三维传感器、系统和相关的方法
US9666636B2 (en) 2011-06-09 2017-05-30 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US10269861B2 (en) 2011-06-09 2019-04-23 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
WO2013072693A1 (fr) 2011-11-15 2013-05-23 Xention Limited Thiéno[2,3-c]pyrazoles destinés à être utilisés comme inhibiteurs des canaux potassiques
WO2013072694A1 (fr) 2011-11-15 2013-05-23 Xention Limited Thiéno- et furo- pyrimidines et pyridines, convenant comme inhibiteurs du canal potassium
US10224359B2 (en) 2012-03-22 2019-03-05 Sionyx, Llc Pixel isolation elements, devices and associated methods
US9905599B2 (en) 2012-03-22 2018-02-27 Sionyx, Llc Pixel isolation elements, devices and associated methods
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US10347682B2 (en) 2013-06-29 2019-07-09 Sionyx, Llc Shallow trench textured regions and associated methods
US11069737B2 (en) 2013-06-29 2021-07-20 Sionyx, Llc Shallow trench textured regions and associated methods
US9673250B2 (en) 2013-06-29 2017-06-06 Sionyx, Llc Shallow trench textured regions and associated methods
EP3917133A1 (fr) * 2020-05-27 2021-12-01 Samsung Electronics Co., Ltd. Capteur hybride visible/nir et lwir doté d'un microbolomètre résistif
US11454546B2 (en) 2020-05-27 2022-09-27 Samsung Electronics Co., Ltd. Hybrid visible/NIR and LWIR sensor with resistive microbolometer

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