WO2010029184A1 - Production of nitride-based phosphors - Google Patents
Production of nitride-based phosphors Download PDFInfo
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- WO2010029184A1 WO2010029184A1 PCT/EP2009/061969 EP2009061969W WO2010029184A1 WO 2010029184 A1 WO2010029184 A1 WO 2010029184A1 EP 2009061969 W EP2009061969 W EP 2009061969W WO 2010029184 A1 WO2010029184 A1 WO 2010029184A1
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- Prior art keywords
- metal
- denotes
- phosphors
- phosphor
- ammonia
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 46
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 59
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 238000010438 heat treatment Methods 0.000 claims description 23
- 239000012190 activator Substances 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
- 229910052791 calcium Inorganic materials 0.000 claims description 15
- 150000004820 halides Chemical class 0.000 claims description 15
- 229910052712 strontium Inorganic materials 0.000 claims description 15
- 229910052693 Europium Inorganic materials 0.000 claims description 13
- 229910052771 Terbium Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- 229910052779 Neodymium Inorganic materials 0.000 claims description 11
- 229910052772 Samarium Inorganic materials 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052684 Cerium Inorganic materials 0.000 claims description 10
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 10
- 229910052689 Holmium Inorganic materials 0.000 claims description 10
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 10
- 229910052788 barium Inorganic materials 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- 229910052691 Erbium Inorganic materials 0.000 claims description 9
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 9
- 229910052765 Lutetium Inorganic materials 0.000 claims description 9
- 229910052775 Thulium Inorganic materials 0.000 claims description 9
- 229910052700 potassium Inorganic materials 0.000 claims description 9
- 229910052706 scandium Inorganic materials 0.000 claims description 9
- 229910052708 sodium Inorganic materials 0.000 claims description 9
- 229910052792 caesium Inorganic materials 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 229910052701 rubidium Inorganic materials 0.000 claims description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 7
- 150000001340 alkali metals Chemical group 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052745 lead Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229910052716 thallium Inorganic materials 0.000 claims description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 63
- 238000006243 chemical reaction Methods 0.000 description 32
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 28
- 230000005284 excitation Effects 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 238000000295 emission spectrum Methods 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 229910007161 Si(CH3)3 Inorganic materials 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- 150000003839 salts Chemical class 0.000 description 11
- 238000003786 synthesis reaction Methods 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 10
- 150000002739 metals Chemical class 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000000695 excitation spectrum Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- 239000003153 chemical reaction reagent Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 238000003746 solid phase reaction Methods 0.000 description 4
- 238000010671 solid-state reaction Methods 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052909 inorganic silicate Inorganic materials 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- 238000001577 simple distillation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 229910017717 NH4X Inorganic materials 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- -1 borides Chemical class 0.000 description 2
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 238000005580 one pot reaction Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- MBEGFNBBAVRKLK-UHFFFAOYSA-N sodium;iminomethylideneazanide Chemical compound [Na+].[NH-]C#N MBEGFNBBAVRKLK-UHFFFAOYSA-N 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000003973 alkyl amines Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- PSBUJOCDKOWAGJ-UHFFFAOYSA-N azanylidyneeuropium Chemical compound [Eu]#N PSBUJOCDKOWAGJ-UHFFFAOYSA-N 0.000 description 1
- 229910001422 barium ion Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 1
- 229910000071 diazene Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 238000010094 polymer processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
- C09K11/77217—Silicon Nitrides or Silicon Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7743—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing terbium
- C09K11/77497—Silicon Nitrides or Silicon Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Definitions
- This invention relates to a new method for the production of nitride-based phosphors, preferably crystalline nitride-based phosphors, in particular of phosphors containing rare earth elements.
- the phosphors can be used, for example, in light sources, especially in Light Emitting Devices (LEDs).
- LED-based solid state lighting devices show remarkable improvements in terms of long lifetime, compactness, designability, environment friendliness and, most importantly, energy efficiency.
- Multi-chip light emitting diodes mc-LEDs
- pc-LEDs phosphor- converted LEDs
- mc-LEDs have the advantageous of potentially higher efficiency and electronically control of the color, they require more complex design, i.e. a power source for each LED increasing the cost dramatically and not applicable for small sizes. And even worse, individual lighting character of each LED leads to an uneven color mixing and results in insufficient illumination. Therefore, without doubt, in this revolution, wavelength conversion phosphors play a crucial role (C. Ronda: Luminescence, WILEY-VCH Verlag, Weinheim, 2008).
- the first white-LEDs by combining a InGaN-based blue-LED emitting at 465 nm with a broadband yellow phosphor, e.g. (Yi -x Gd ⁇ ) 3 (Ali-yGay)5 ⁇ i 2 :Ce 3+ (cerium-doped Yttrium Aluminum Garnet (YAG:Ce) was immediately commercialized (S.Nakamura: The Blue Laser Diode, Springer-Verlag, Berlin, 1997 and US 5,998,925). Although this type of white LEDs still has a big share in the market, they have inadequate color rendering properties due to lack of green and red color elements. Therefore, tremendous efforts have been spent in recent years among the researchers to develop new phosphor systems, especially red ones.
- a broadband yellow phosphor e.g. (Yi -x Gd ⁇ ) 3 (Ali-yGay)5 ⁇ i 2 :Ce 3+ (cerium-doped Yttrium Aluminum Garnet (YAG:Ce
- nitridosilicate-type crystalline phosphors possess superior photoluminescence properties (e.g., relatively sharp and very intense orange to red emissions) together with outstanding thermal, chemical and mechanical stabilities and structural diversities compared to other phosphor systems, such as oxides, sulfides and halides. Therefore, an extensive research is going on both in industry and in academia to synthesize new crystalline nitridosilicate-type phosphors and, especially, to find an elegant way for mass-production of these materials.
- New host lattices of nitridosilicate type consist of a three dimensional network of crosslinked SiN 4 tetrahedra in which alkaline earth ions Ca, Sr and Ba are incorporated.
- Such lattices were first synthesized by Schnick and co-workers and examples are Ca 2 Si 5 N 8 (Schlieper and Schnick, Z. anorg. AIIg. Chem. 621, (1995), 1037), Sr 2 Si 5 N 8 and Ba 2 Si 5 N 8 (Schlieper, Millus and Schnick, Z. anorg. AIIg. Chem.
- the phosphors produced thereby show orange to red emission and have high quantum efficiency and very low thermal quenching which makes them very promising red phosphors in white LEDs to improve the color rendering properties.
- these orange-to-red phosphors show the best properties ever achieved, the original synthesis method was not applicable to industrial scale.
- First of all the raw powder Si(NH) 2 is not commercially available and has to be synthesized separately. Furthermore, it is, together with other reactants, very sensitive to oxygen and moisture and has to be grinded in a dry-box which makes them difficult in handling. And even worse, pyrolysis is performed in a radio frequency furnace in a tungsten crucible at extreme temperature and times which makes the cost very high and the yield very low. Therefore, this multistep and complex procedure is not considered as industrial scale production.
- Hintzen Li, Y. Q.; van Steen, J.E.J.; van Krevel J.W.H.; Botty, G.; Delsing, A.C.A.; DiSalvo, FJ. ; de With, G.; Hintzen, H. T. J. Alloy & Comp. 2006, 417, 273 and EP1104799.
- Nitridation of Eu, Ba and Sr were done separately and grounded together with the other reactants in an agate mortar in a dry-box, which again makes the handling difficult and tedious.
- This method is also a multistep and complex procedure which is less laborious for mass production and, therefore, it is regarded as a method superior to the previous one.
- the big disadvantage of given method is that it is unavoidable to have residual carbon in the phosphor, which significantly reduces its absorption and emission.
- Annealing at temperatures above 600 0 C in air for 2 hours or oxygen atmosphere can be applied in order to remove the residual carbon but Krevel et al. (van Krevel, J.W.H. Ph.D. Thesis, Eindhoven University of Technology, 2000) have reported that a heat treatment at 600 0 C in air for 2 hours kills completely the red emission of Sr 2 Si 5 N 8 :Eu 2+ due to the oxidation of Eu 2+ to Eu 3+ . Therefore, the problem of complete removal of residual carbon in the final phosphor makes this method unlikely to be used for mass production.
- the synthesized phosphor is a complex mixture of M 2 Si 5 N 8 :Eu 2+ ( ⁇ 64 wt %) and M 2 SiO 4 : Eu 2+ (-36 wt %).
- the authors claim that the latter does not give emissions under the blue light excitation, making the complex phosphor resemble a single M 2 Si 5 N 8 :Eu 2+ phosphor. Nevertheless, one can not obtain pure, single phase phosphors with this method.
- nitride-based phosphors in particular, rare earth element containing nitridosilicate phosphors, particularly based on a polymer route.
- the novelty in the present invention is that the production of the nitride based crystalline phosphors are based on a one-step reaction of commercially available liquid state reagents resulting a polymeric intermediate, which can directly be pyrolysed in a common horizontal furnace for comparably short reaction times. Since the most of the starting reagents are liquid, the high purity can easily be achieved by simple distillation techniques and any unreacted reagents or intermediate salt products can be recycled easily.
- the present invention therefore, provides an alternative method for the production of nitridosilicate-type phosphors based on a polymer route.
- the present invention has following advantageous compared to already available all-solid-state-synthsesis methods: 1 ) All starting reagents are commercially available (no additional synthesis steps for the starting compounds, thus, no additional handling and grinding steps are required- a real one-pot synthesis) and can easily be purified either by simple distillation (e.g., liquids) or sublimation (e.g., metal-complexes) techniques. Therefore, high purity in the final crystalline compounds can easily be achieved, which is a major problem in all-solid-state reactions.
- this object is achieved by a method for the production of nitrogen-containing phosphors, in particular crystalline nitrogen-containing phosphors comprising the step (i) reacting a halide with ammonia NH 3 and a metal source M, i.e. ammonlysis of a halide with a metal source M.
- nitride-based phosphors preferably crystalline nitride-based phosphors
- ammonia in a simple reaction, starting out from readily available starting materials such as halides as well as elemental metals or metal compounds. This makes a very interesting class of substances accessible, namely nitride-based phosphor materials.
- a metal source M is used.
- Said metal source M can contain activators (A), charge compensators (C) and/or sensitizers (B).
- Activators are rare earth elements, preferably selected from the group Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and/or Y. Most preferably, the activator is selected from Eu and/or Yb.
- the metal source M can comprise the activator in the form of metals, e.g. elemental Eu and/or elemental Yb.
- the metal source M can also contain the activator in the form of activator ions.
- the metal source M comprises a complex containing the activator ion (RE complex) such as a complex of Ce, Mn, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and/ or Y.
- RE complex activator ion
- rare earth elements easily dissolve in ammonia, so it is often preferred to use simply rare earth elements such as Eu and/or Yb metal dissolved in ammonia as the metal source M.
- Eu, Yb, alkaline and alkaline earth metals are soluble in liquid NH 3 and form solvated electrons:
- the metal source M only contains activators, however, no sensitizers and/or charge compensators.
- the metal source M contains charge compensators.
- Suitable charge compensators e.g. are alkali metals and/or earth alkali metals such as Li, Na, K, Rb, Cs, Ca, Sr and/or Ba.
- the charge compensators are selected from Ca, Sr and/or Ba.
- the metal source can also contain sensitizers. Suitable sensitizers e.g. are Sn, Mn, Zn, Sb, Pb and/or Bi. According to the invention charge compensators and sensitizers, too, can be used in the form of metals or as ions.
- the metal source only contains activators without any sensitizers or charge compensators. In a further embodiment, the metal source only contains charge compensator ions and/or sensitizer ions without any activator ions. In said embodiment a nitrido-based matrix material is obtained.
- the metal source M contains either charge compensators or sensitizers, and activators.
- a nitrido-based lattice is obtained which is doped with activators.
- the mole percent of activators with respect to compensators or sensitizers, respectively, is preferably between 0.1 and 99.9, in particular, between 1 and 20.
- the metal source can comprise activators, charge compensators and sensitizers.
- the mole percent of sensitizers with respect to activators is preferably between 0.1 and 99.9, in particular, between 40 and 60.
- a halide is used according to the invention.
- D is an element which also can be found in the phosphor formed.
- the halide used e.g. is a silicon-containing compound.
- D is an element selected from B, Al, Ga, In, Tl, Si 1 Ge, Sn, Pb, P, As, Sb and/or Bi.
- D is selected from an element of Group XIII or XIV of the Periodic Table of Elements.
- D is selected from Si, Ge, B and/or Al.
- X denotes halogen, in particular, F, Cl, Br, I and preferably Cl.
- NH 4 X is formed which can be easily separated from the desired product.
- the reaction of the invention takes place in ammonia, NH 3 .
- the reaction can be performed in pure liquid ammonia, to which the halide and the metal source are added. It has been found that the above-described metal sources are excellently soluble in NH 3 and, thus, a reaction with halides in the presence of NH 3 is possible.
- Pure liquid ammonia hereby especially means ammonia having a purity of ⁇ 95 wt.%, more preferably ⁇ 98 wt.%.
- Suitable solvents are hydrocarbon solvents, in particular, Ci-CiO 1 more preferably C 6 -Ci 0 alkanes. Hexane is especially preferred as a co-solvent.
- step (i) When the reaction of step (i) is concluded, by-products can be easily separated from the desired compound and recycled, if desired. Excess ammonia, for example, can be separated in a cold trap under ambient conditions and recycled. Any solvent used such as hexane can be separated under vacuum in a cold trap. Further, NH 4 X is formed in the reaction, especially NH 4 CI which can be separated easily by sublimation. As a result, a polymeric intermediate is obtained, which can be directly coated on an LED without requiring any additional resin. Furthermore, this polymer can be processed easily for any desired shape. According to a further preferred embodiment the polymeric intermediate is obtained in powder form.
- the product obtained then can be subjected to a heat treatment, in particular, in order to remove residual hydrogen and to obtain the final compound.
- the heat treatment preferably consists of two stages. In a first stage, heating to 600 to 1000 °C is effected, preferably to 800 to 900 0 C, for a period of 1 hour to 5 hours, especially for 2.5 hours to 3.5 hours. Heat treatment can take place, for example, in a BN crucible. During said first stage the material is preferably treated in a NH 3 flow.
- the first heating stage is preferably followed by a second heating stage.
- heat treatment is carried out at 1100 to 2500 0 C, preferably at 1200 to 2000 0 C, more preferably at 1400 to 1600 0 C.
- heat treatment in the second heating stage is performed at 1100 to 1500 0 C.
- the second heating stage is preferably carried out for 2 to 10 hours, in particular, for 5 to 7 hours.
- the second heating stage favorably takes place in an inert atmosphere such as helium, nitrogen and/or argon, in particular, under a N 2 flow.
- standard horizontal furnaces can be used for the heat treatment.
- an additional heat treatment is applied to the polymer during which further polycondensation takes place.
- volatile components mainly organic fragments
- the first step of the heat treatment e.g. up to 900 0 C, usually low molecular weight organic fragments are released such as hydrogen, ammonia, methylamine, dimethylamine, methane, hydrogen cyanide, acetonitrile, trimethysilyl and etc.
- Ammonia flow during pyrolysis is very crucial in the synthesis of pure nitrides from carbon-containing precursors, since it removes carbon very efficiently and works as an aminizing or transaminizing agent, substituting alkylamines and enhances crosslinking.
- the second step of the heat treatment usually at about 1100-1200 0 C, residual hydrogen and small amount of nitrogen are released.
- a pure inorganic solid residuum is obtained so that the end product is a ceramic.
- a phosphor material in particular, in powder form is obtained according to the invention. After the heating step (ii) preferably a ceramic material is obtained.
- heating is performed in an atmosphere which contains no oxygen such as in a NH 3 atmosphere in the first heating stage and an inert gas atmosphere in the second heating stage. Therefore, no unwanted oxidation of activator ions takes place.
- the emission wavelengths of the phosphors obtainable according to the invention are preferably in the red range, in particular, from 500 nm to 800 nm. Since the materials further exhibit excitation wavelengths in the blue range, they are especially useful as materials for wavelength conversion in phosphor-converted LEDs.
- the phosphors produced according to the invention preferably have formula (I)
- D denotes an element of Group XIII, XIV or XV of the Periodic Table of
- N denotes nitrogen
- x, z and y are selected such that the metal ions balance the negative charge provided by D q N p .
- phosphors of the formula A x B 2 CySi 5 N 8 are formed, being (oxo)nitridosilicates. Also preferred are (oxo)nitridoalumino-silicates.
- Oxygen can be introduced into the materials, in particular, into the ceramics, adding water to the reaction medium and performing a partial hydrolysis during polymerization. Preferably, water is added in a controlled amount.
- the invention relates to a novel synthesis method for the production of nitride-based phosphors.
- the present invention provides an easy and versatile method for the production of nitride-based phosphors.
- the invented method is based on the solubility of activator ions such as Eu and Yb metals and RE complexes where RE is at least one of the rare-earth metal chosen from the group of Ce, Pr 1 Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y, Sn and mixtures thereof, sensitizer ions like Sn, Mn, Zn, Sb, Pb, Bi and mixtures thereof and/or charge compensator ions such as Li, Na, K, Rb, Cs,
- M metals
- M Ca, Sr, Ba
- Eu dissolved in liquid ammonia
- the present invention reports the synthesis of phosphors MV 2x R x M 1 XSi 5 N 8 based on a direct reaction of SiCI 4 with metals M 1 and M"
- R[N(Si(CH 3 ) 3 ) 2 ] 3 (R Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy
- by-products can be easily recycled such as excess NH 3 at ambient condition in a cold trap, hexane under vacuum in a cold trap and NH 4 CI via sublimation.
- the remaining powder mixture is heated in a BN crucible to 900 0 C for 3 hours with NH 3 flow in a quartz tube and finally to 1500 0 C for 6 hours with N 2 flow in an alumina tube.
- G is Li, Na, K, Rb or Cs, preferably Li, F is Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y and/or Mn, preferably Ce or Tb.
- m + a + a is preferably 2 or 1.
- Preferred host matrices of the present invention are E 2 Si 5 N 8 and EiSi 7 Ni 0 .
- said host matrices are doped with elements represented by the variables F and G as defined above.
- a compound having the formula is obtained as a preferred embodiment of the present invention for host matrix E 2 Si 5 N 8 .
- a compound having the formula Ei -23 FaGaSi 7 Ni 0 is obtained for host matrix EiSi 7 Ni 0 by corresponding doping.
- phosphors which are selected from the group consisting of Sr 2-2a TbaLi a Si 5 N 8 , Ca 2-2a TbaLi a Si 5 N 8 , Bai -2a Tb a Li a Si 7 Ni 0 and/or Bai. 2a CeaLiaSi 7 Ni 0 .
- the invention further relates to a light source comprising a primary light emitting device, in particular, a blue light emitting device and a material obtained by the process described herein.
- Said phosphor material serves for wavelength conversion.
- the red emitting luminescent material obtained according to the method of the invention is combined with a green emitting phosphor to obtain a light source which emits a white secondary light.
- the phosphors obtained are preferably used in LEDs.
- the materials obtained are preferably used as phosphors for conversion of light, in particular, for conversion to higher wavelengths.
- Figure 1 shows a) experimental b) theoretical powder X-ray diffraction of Eu 2 Si 5 N 8
- Figure 2 shows the emission spectrum of Eu 2 Si 5 N 8 at 340 nm excitation
- Figure 3 shows the excitation spectrum of Eu 2 Si 5 N 8 at 622 nm emission
- Figure 4 shows the emission spectrum of Ca 2 Si 5 N 8 IEu at 340 nm excitation
- Figure 5 shows the excitation spectrum of Ca 2 Si 5 N 8 :Eu at 591 nm emission
- Figure 6 shows the emission spectrum of Sr 2 Si 5 N 8 :Eu at 340 nm excitation
- Figure 7 shows the excitation spectrum of Sr 2 Si 5 N 8 :Eu at 604 nm emission
- Figure 8 shows the emission spectrum of Sr 2 Si 5 N 8 :Eu at 462 nm excitation
- Figure 9 shows the emission spectrum of Sr 2-28 Tb 3 Li 3 Si 5 N 8 at 365 nm excitation
- Figure 10 shows the emission spectrum of Bai -2 aCeaLiaSi 7 Nio at
- the invented method is very convenient for mass production because all the starting materials are commercially available and relatively cheap compared to already given methods and it does not require multistep and complex systems. And even better, all excess and by-products can be easily recycled which is very important for environmental issues.
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Abstract
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CN2009801358603A CN102159665A (en) | 2008-09-15 | 2009-09-15 | Production of nitride-based phosphors |
US13/062,778 US8455273B2 (en) | 2008-09-15 | 2009-09-15 | Method for producing crystalline nitride phosphors |
EP09783049A EP2340291A1 (en) | 2008-09-15 | 2009-09-15 | Production of nitride-based phosphors |
JP2011526511A JP2012503034A (en) | 2008-09-15 | 2009-09-15 | Production of nitride-based phosphors |
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EP (2) | EP2163593A1 (en) |
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DE102011013331A1 (en) | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Carbodiimide phosphors |
CN102899038A (en) * | 2012-10-30 | 2013-01-30 | 江苏博睿光电有限公司 | Nitride red fluorescent powder and preparation method thereof |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1104799A1 (en) * | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Red emitting luminescent material |
US20020105269A1 (en) * | 2001-02-07 | 2002-08-08 | Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh | Highly efficient fluorescent material |
DE102006051757A1 (en) * | 2006-11-02 | 2008-05-08 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | phosphors |
DE102006051756A1 (en) * | 2006-11-02 | 2008-05-08 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | light source |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
CN1206314C (en) * | 2003-04-11 | 2005-06-15 | 唐敏 | Acumulating self-luminescence material with long afterglow and its preparing method |
WO2007091615A1 (en) * | 2006-02-09 | 2007-08-16 | Ube Industries, Ltd. | Method for production of blue-light-emitting fluorescent material |
CN101379164B (en) * | 2006-02-10 | 2012-11-21 | 三菱化学株式会社 | Phosphor, method for producing same, phosphor-containing composition, light-emitting device, image display, and illuminating device |
-
2008
- 2008-09-15 EP EP08016232A patent/EP2163593A1/en not_active Ceased
-
2009
- 2009-09-15 US US13/062,778 patent/US8455273B2/en not_active Expired - Fee Related
- 2009-09-15 WO PCT/EP2009/061969 patent/WO2010029184A1/en active Application Filing
- 2009-09-15 EP EP09783049A patent/EP2340291A1/en not_active Withdrawn
- 2009-09-15 JP JP2011526511A patent/JP2012503034A/en active Pending
- 2009-09-15 CN CN2009801358603A patent/CN102159665A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1104799A1 (en) * | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Red emitting luminescent material |
US20020105269A1 (en) * | 2001-02-07 | 2002-08-08 | Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh | Highly efficient fluorescent material |
DE102006051757A1 (en) * | 2006-11-02 | 2008-05-08 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | phosphors |
DE102006051756A1 (en) * | 2006-11-02 | 2008-05-08 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | light source |
Non-Patent Citations (2)
Title |
---|
R.-J. XIE, ET. AL.: "Silicon-based oxynitride and nitride phosphors for white LEDs - A review", SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, vol. 8, 2007, Elsevier, pages 588 - 600, XP002518479 * |
Y. Q. LI, ET. AL.: "Luminescence properties of Ce3+-activated alkaline earth silicon nitride M2Si5N8 (M=Ca,Sr,Ba) materials", JOURNAL OF LUMINESCENCE, vol. 116, 17 May 2006 (2006-05-17), Elsevier, pages 107 - 116, XP002550313 * |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2012122068A (en) * | 2010-12-03 | 2012-06-28 | Samsung Led Co Ltd | Method for preparing phosphor, phosphor, and light emitting device |
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DE102011013331A1 (en) | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Carbodiimide phosphors |
WO2012119689A1 (en) | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Carbodiimide luminescent substances |
CN103361055A (en) * | 2012-04-02 | 2013-10-23 | 吕宗昕 | Phosphor and light emitting device |
CN103361055B (en) * | 2012-04-02 | 2016-08-31 | 吕宗昕 | Phosphor and light emitting device |
US9938460B2 (en) | 2012-04-02 | 2018-04-10 | National Taiwan University | Phosphor, light emitting apparatus and method of forming phosphor |
WO2014008970A1 (en) | 2012-07-13 | 2014-01-16 | Merck Patent Gmbh | Process for production of phosphors |
US9580649B2 (en) | 2012-07-13 | 2017-02-28 | Merck Patent Gmbh | Process for production of phosphors |
CN102899038A (en) * | 2012-10-30 | 2013-01-30 | 江苏博睿光电有限公司 | Nitride red fluorescent powder and preparation method thereof |
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EP2163593A1 (en) | 2010-03-17 |
US8455273B2 (en) | 2013-06-04 |
US20110163344A1 (en) | 2011-07-07 |
EP2340291A1 (en) | 2011-07-06 |
JP2012503034A (en) | 2012-02-02 |
CN102159665A (en) | 2011-08-17 |
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