WO2010019008A3 - Réacteur de dépôt en phase vapeur - Google Patents

Réacteur de dépôt en phase vapeur Download PDF

Info

Publication number
WO2010019008A3
WO2010019008A3 PCT/KR2009/004529 KR2009004529W WO2010019008A3 WO 2010019008 A3 WO2010019008 A3 WO 2010019008A3 KR 2009004529 W KR2009004529 W KR 2009004529W WO 2010019008 A3 WO2010019008 A3 WO 2010019008A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
vapor deposition
deposition reactor
reaction module
injection unit
Prior art date
Application number
PCT/KR2009/004529
Other languages
English (en)
Other versions
WO2010019008A2 (fr
Inventor
Sang In Lee
Original Assignee
Synos Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090074133A external-priority patent/KR101076172B1/ko
Application filed by Synos Technology, Inc. filed Critical Synos Technology, Inc.
Publication of WO2010019008A2 publication Critical patent/WO2010019008A2/fr
Publication of WO2010019008A3 publication Critical patent/WO2010019008A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention porte sur un réacteur de dépôt en phase vapeur comprenant un module de réaction comprenant une première unité d'injection pour l'injection d'un premier matériau sur un substrat. Au moins une seconde unité d'injection est placée à l'intérieur de la première unité d'injection pour l'injection d'un second matériau sur le substrat. Le substrat passe dans le module de réaction par un mouvement relatif entre le substrat et le module de réaction. Le réacteur de dépôt en phase vapeur injecte avantageusement une pluralité de matériaux sur le substrat alors que le substrat passe dans le module de réaction sans exposer le substrat à l'atmosphère dans une chambre.
PCT/KR2009/004529 2008-08-13 2009-08-13 Réacteur de dépôt en phase vapeur WO2010019008A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20080079510 2008-08-13
KR10-2008-0079510 2008-08-13
KR10-2009-0074133 2009-08-12
KR1020090074133A KR101076172B1 (ko) 2008-08-13 2009-08-12 기상 증착 반응기

Publications (2)

Publication Number Publication Date
WO2010019008A2 WO2010019008A2 (fr) 2010-02-18
WO2010019008A3 true WO2010019008A3 (fr) 2010-04-15

Family

ID=41669497

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/004529 WO2010019008A2 (fr) 2008-08-13 2009-08-13 Réacteur de dépôt en phase vapeur

Country Status (1)

Country Link
WO (1) WO2010019008A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8143147B1 (en) * 2011-02-10 2012-03-27 Intermolecular, Inc. Methods and systems for forming thin films
KR102154707B1 (ko) 2013-04-25 2020-09-11 삼성디스플레이 주식회사 기상 증착 장치, 이를 이용한 증착 방법 및 유기 발광 표시 장치 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6089184A (en) * 1997-06-11 2000-07-18 Tokyo Electron Limited CVD apparatus and CVD method
WO2006123870A1 (fr) * 2005-05-19 2006-11-23 Piezonics Co., Ltd. Appareil et procede de depot chimique en phase vapeur par douche
US20070234957A1 (en) * 2006-04-06 2007-10-11 Jusung Engineering Co., Ltd. Method of forming oxide film and oxide deposition apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6089184A (en) * 1997-06-11 2000-07-18 Tokyo Electron Limited CVD apparatus and CVD method
WO2006123870A1 (fr) * 2005-05-19 2006-11-23 Piezonics Co., Ltd. Appareil et procede de depot chimique en phase vapeur par douche
US20070234957A1 (en) * 2006-04-06 2007-10-11 Jusung Engineering Co., Ltd. Method of forming oxide film and oxide deposition apparatus

Also Published As

Publication number Publication date
WO2010019008A2 (fr) 2010-02-18

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