WO2010018490A3 - A photovoltaic cell and a method of manufacturing the same - Google Patents

A photovoltaic cell and a method of manufacturing the same Download PDF

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Publication number
WO2010018490A3
WO2010018490A3 PCT/IB2009/053408 IB2009053408W WO2010018490A3 WO 2010018490 A3 WO2010018490 A3 WO 2010018490A3 IB 2009053408 W IB2009053408 W IB 2009053408W WO 2010018490 A3 WO2010018490 A3 WO 2010018490A3
Authority
WO
WIPO (PCT)
Prior art keywords
photovoltaic cell
manufacturing
same
semiconductive
conductivity
Prior art date
Application number
PCT/IB2009/053408
Other languages
French (fr)
Other versions
WO2010018490A2 (en
Inventor
Yukiko Furukawa
Frank Pasveer
Johan Klootwijk
Jinesh Kochupurackal
Original Assignee
Nxp B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp B.V. filed Critical Nxp B.V.
Publication of WO2010018490A2 publication Critical patent/WO2010018490A2/en
Publication of WO2010018490A3 publication Critical patent/WO2010018490A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
    • H01L31/03845—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material comprising semiconductor nanoparticles embedded in a semiconductor matrix
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

A photovoltaic cell (100) which comprises a semiconductive matrix (102) of a first type of conductivity, and a plurality of semiconductive nanoclusters (104) of a second type of conductivity which differs from the first type of conductivity which are at least partially embedded in the semiconductive matrix (102) so that a pn-junction (106) is formed between the plurality of semiconductive nanoclusters (104) and the semiconductive matrix (102).
PCT/IB2009/053408 2008-08-12 2009-08-05 A photovoltaic cell and a method of manufacturing the same WO2010018490A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08105025 2008-08-12
EP08105025.4 2008-08-12

Publications (2)

Publication Number Publication Date
WO2010018490A2 WO2010018490A2 (en) 2010-02-18
WO2010018490A3 true WO2010018490A3 (en) 2011-02-17

Family

ID=41669404

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2009/053408 WO2010018490A2 (en) 2008-08-12 2009-08-05 A photovoltaic cell and a method of manufacturing the same

Country Status (1)

Country Link
WO (1) WO2010018490A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9382474B2 (en) 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
WO2012108766A2 (en) 2011-02-08 2012-08-16 Tsc Solar B.V. A method of manufactering a solar cell and a solar cell
CN104576713B (en) * 2014-12-31 2018-03-30 中国科学院宁波材料技术与工程研究所 Pn-junction and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070028957A1 (en) * 2003-10-09 2007-02-08 Hans-Joachim Lewerenz Photovoltaic solar cell...
US20070175507A1 (en) * 2006-01-28 2007-08-02 Banpil Photonics, Inc. High efficiency photovoltaic cells
US20080092946A1 (en) * 2006-10-24 2008-04-24 Applied Quantum Technology Llc Semiconductor Grain Microstructures for Photovoltaic Cells

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070028957A1 (en) * 2003-10-09 2007-02-08 Hans-Joachim Lewerenz Photovoltaic solar cell...
US20070175507A1 (en) * 2006-01-28 2007-08-02 Banpil Photonics, Inc. High efficiency photovoltaic cells
US20080092946A1 (en) * 2006-10-24 2008-04-24 Applied Quantum Technology Llc Semiconductor Grain Microstructures for Photovoltaic Cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EUN-CHEL CHO ET AL: "Silicon quantum dot/crystalline silicon solar cells", NANOTECHNOLOGY, IOP, BRISTOL, GB, vol. 19, no. 24, 18 June 2008 (2008-06-18), pages 245201, XP020136613, ISSN: 0957-4484 *

Also Published As

Publication number Publication date
WO2010018490A2 (en) 2010-02-18

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