WO2010008603A3 - Dispositifs photovoltaïques allongés, leurs procédés et systèmes de fabrication - Google Patents

Dispositifs photovoltaïques allongés, leurs procédés et systèmes de fabrication Download PDF

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Publication number
WO2010008603A3
WO2010008603A3 PCT/US2009/004176 US2009004176W WO2010008603A3 WO 2010008603 A3 WO2010008603 A3 WO 2010008603A3 US 2009004176 W US2009004176 W US 2009004176W WO 2010008603 A3 WO2010008603 A3 WO 2010008603A3
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WO
WIPO (PCT)
Prior art keywords
making same
photovoltaic module
solar cells
systems
methods
Prior art date
Application number
PCT/US2009/004176
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English (en)
Other versions
WO2010008603A2 (fr
WO2010008603A8 (fr
Inventor
Erel Milshtein
Benyamin Buller
Original Assignee
Solyndra, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Solyndra, Inc. filed Critical Solyndra, Inc.
Publication of WO2010008603A2 publication Critical patent/WO2010008603A2/fr
Publication of WO2010008603A8 publication Critical patent/WO2010008603A8/fr
Publication of WO2010008603A3 publication Critical patent/WO2010008603A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne, dans un aspect, un module photovoltaïque non planaire présentant une longueur, qui comporte: (a) un substrat non planaire allongé; et (b) plusieurs cellules solaires disposées sur le substrat non planaire allongé, chacune des cellules solaires étant définie par (i) plusieurs rainures autour du module photovoltaïque non planaire et (ii) une rainure sur la longueur du module photovoltaïque. Dans certains modes de réalisation, chacune des rainures autour du module photovoltaïque présente de manière indépendante un motif répétitif, un motif non répétitif, ou est hélicoïdal. Dans certains modes de réalisation, le module comporte en outre un conducteur à motif fournissant une communication électrique en série entre cellules solaires contiguës. Dans certains modes de réalisation, des parties du conducteur à motif fournissant une communication électrique en série entre cellules solaires contiguës se trouvent à l'intérieur d'une des rainures autour du module photovoltaïque.
PCT/US2009/004176 2008-07-18 2009-07-17 Dispositifs photovoltaïques allongés, leurs procédés et systèmes de fabrication WO2010008603A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8215208P 2008-07-18 2008-07-18
US61/082,152 2008-07-18

Publications (3)

Publication Number Publication Date
WO2010008603A2 WO2010008603A2 (fr) 2010-01-21
WO2010008603A8 WO2010008603A8 (fr) 2010-04-08
WO2010008603A3 true WO2010008603A3 (fr) 2010-05-27

Family

ID=41429445

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/004176 WO2010008603A2 (fr) 2008-07-18 2009-07-17 Dispositifs photovoltaïques allongés, leurs procédés et systèmes de fabrication

Country Status (2)

Country Link
US (2) US8383929B2 (fr)
WO (1) WO2010008603A2 (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201034212A (en) * 2009-03-13 2010-09-16 guo-hong Shen Thin-film solar cell structure
AU2010201980A1 (en) * 2009-05-21 2010-12-09 Suntech Power Co., Ltd. Thin film solar module
JP2010272738A (ja) * 2009-05-22 2010-12-02 Sanyo Electric Co Ltd 太陽電池モジュールの製造方法
US8511006B2 (en) * 2009-07-02 2013-08-20 Owens Corning Intellectual Capital, Llc Building-integrated solar-panel roof element systems
WO2011028290A1 (fr) * 2009-09-06 2011-03-10 Hanzhong Zhang Dispositif photovoltaïque tubulaire et son procédé de fabrication
FR2956775B1 (fr) * 2010-02-19 2012-03-09 Physique Du Rayonnement Et De La Lumiere Lprl Lab De Modules photovoltaiques pour serre agricole et procede de fabrication de tels modules
CN102792463B (zh) * 2010-03-10 2015-10-14 陶氏环球技术有限责任公司 挠性太阳能电池互连系统和方法
DE102010013253B4 (de) * 2010-03-29 2018-04-19 Oc3 Ag Verfahren zum Strukturieren von CIGS-Dünnschichtsolarzellen
US8563351B2 (en) * 2010-06-25 2013-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing photovoltaic device
US9647162B2 (en) 2011-01-20 2017-05-09 Colossus EPC Inc. Electronic power cell memory back-up battery
US20120187763A1 (en) 2011-01-25 2012-07-26 Isoline Component Company, Llc Electronic power supply
CN102779895A (zh) * 2011-05-13 2012-11-14 江伦 太阳能电池及其制造方法、光电光热真空管及其接收器
US8782972B2 (en) 2011-07-14 2014-07-22 Owens Corning Intellectual Capital, Llc Solar roofing system
FR2990300B1 (fr) 2012-05-04 2017-02-03 Disasolar Module photovoltaique et son procede de realisation.
CN103579407A (zh) * 2012-07-26 2014-02-12 聚日（苏州）科技有限公司 一种太阳能电池及其制造方法
WO2015036809A1 (fr) * 2013-09-13 2015-03-19 Holger Behrendt Conducteurs de récupération d'énergie solaire
US9741918B2 (en) 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit
US9401438B2 (en) 2013-11-13 2016-07-26 Industrial Technology Research Institute Solar cell module and solar cell thereof
US9741882B2 (en) 2014-08-25 2017-08-22 IntriEnergy Inc. Tandem junction photovoltaic cell
FR3029215B1 (fr) * 2014-12-02 2016-11-25 Sunpartner Technologies Fil textile photovoltaique
ES2772256T3 (es) * 2015-11-06 2020-07-07 Meyer Burger Switzerland Ag Láminas conductoras de polímero, celdas solares y métodos para producirlos
GB201613051D0 (en) 2016-07-28 2016-09-14 Landa Labs (2012) Ltd Applying an electrical conductor to a substrate
EP3542403A4 (fr) 2016-11-17 2020-09-30 Ubiquitous Energy, Inc. Module photovoltaïque à cellule unique
CN107393981B (zh) * 2017-09-13 2023-08-15 李会欣 深置背极光伏电池组件、加工方法及光伏系统
DE102018113484B3 (de) 2018-06-06 2019-06-27 Holger Behrendt Vorrichtung zur umwandlung von sonnenlicht in elektrische energie
AU2019298248A1 (en) 2018-07-04 2021-02-25 Hyperstealth Biotechnology Corporation Interconnected lens materials arranged as lens sheets for improved camouflage

Citations (3)

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JPS5947773A (ja) * 1982-09-10 1984-03-17 Sanyo Electric Co Ltd 太陽エネルギ−変換装置
WO2007002110A2 (fr) * 2005-06-20 2007-01-04 Solyndra, Inc. Dispositifs bifaciaux a cellules solaires allongees
US7235736B1 (en) * 2006-03-18 2007-06-26 Solyndra, Inc. Monolithic integration of cylindrical solar cells

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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPS5947773A (ja) * 1982-09-10 1984-03-17 Sanyo Electric Co Ltd 太陽エネルギ−変換装置
WO2007002110A2 (fr) * 2005-06-20 2007-01-04 Solyndra, Inc. Dispositifs bifaciaux a cellules solaires allongees
US7235736B1 (en) * 2006-03-18 2007-06-26 Solyndra, Inc. Monolithic integration of cylindrical solar cells

Also Published As

Publication number Publication date
US20130284240A1 (en) 2013-10-31
US20100012167A1 (en) 2010-01-21
WO2010008603A2 (fr) 2010-01-21
US8383929B2 (en) 2013-02-26
WO2010008603A8 (fr) 2010-04-08

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