WO2010007617A3 - Method and apparatus for photovoltaic thin film quality control - Google Patents

Method and apparatus for photovoltaic thin film quality control Download PDF

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Publication number
WO2010007617A3
WO2010007617A3 PCT/IL2009/000684 IL2009000684W WO2010007617A3 WO 2010007617 A3 WO2010007617 A3 WO 2010007617A3 IL 2009000684 W IL2009000684 W IL 2009000684W WO 2010007617 A3 WO2010007617 A3 WO 2010007617A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
quality control
photovoltaic thin
sampled points
photovoltaic
Prior art date
Application number
PCT/IL2009/000684
Other languages
French (fr)
Other versions
WO2010007617A2 (en
Inventor
Moshe Finarov
Original Assignee
Brightview Systems Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brightview Systems Ltd. filed Critical Brightview Systems Ltd.
Priority to JP2011518055A priority Critical patent/JP2011528188A/en
Priority to EP09787463A priority patent/EP2212680A2/en
Publication of WO2010007617A2 publication Critical patent/WO2010007617A2/en
Publication of WO2010007617A3 publication Critical patent/WO2010007617A3/en
Priority to IL210259A priority patent/IL210259A0/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901—Optical details; Scanning details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901—Optical details; Scanning details
    • G01N2021/8908—Strip illuminator, e.g. light tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/08—Optical fibres; light guides
    • G01N2201/0826—Fibre array at source, distributing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/08—Optical fibres; light guides
    • G01N2201/0833—Fibre array at detector, resolving
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/108—Miscellaneous
    • G01N2201/1085—Using optical fibre array and scanner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Textile Engineering (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Photovoltaic thin film quality control is obtained where the thin film is supported by a support and a section of the film is illuminated by a polychromatic illumination source. The source forms on the thin film a continuous illuminated line. Discrete sampled points located on the illuminated line are imaged onto a two dimensional optical switch. A concordance look-up-table between the coordinates of the above sampled points on the thin film and their coordinates on the two dimensional optical switch are generated. The spectral composition of the illumination reflected by the sampled points is determined and photovoltaic thin film parameters applicable to the quality control are derived from the spectral composition of reflected or transmitted by the photovoltaic thin film illumination.
PCT/IL2009/000684 2008-07-14 2009-07-09 A method and apparatus for thin film quality control WO2010007617A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011518055A JP2011528188A (en) 2008-07-14 2009-07-09 Method and apparatus for thin film quality control
EP09787463A EP2212680A2 (en) 2008-07-14 2009-07-09 A method and apparatus for thin film quality control
IL210259A IL210259A0 (en) 2008-07-14 2010-12-26 A method and apparatus for thin film quality control

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8027908P 2008-07-14 2008-07-14
US61/080,279 2008-07-14
US10593108P 2008-10-16 2008-10-16
US61/105,931 2008-10-16

Publications (2)

Publication Number Publication Date
WO2010007617A2 WO2010007617A2 (en) 2010-01-21
WO2010007617A3 true WO2010007617A3 (en) 2010-03-18

Family

ID=41138862

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2009/000684 WO2010007617A2 (en) 2008-07-14 2009-07-09 A method and apparatus for thin film quality control

Country Status (4)

Country Link
US (1) US20100006785A1 (en)
EP (1) EP2212680A2 (en)
JP (1) JP2011528188A (en)
WO (1) WO2010007617A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100220316A1 (en) * 2008-07-14 2010-09-02 Moshe Finarov Method and apparatus for thin film quality control
CN102812349B (en) * 2010-01-04 2016-03-09 Bt成像股份有限公司 The online photoluminescence imaging of semiconductor equipment
JP5509414B2 (en) * 2010-01-28 2014-06-04 大日本スクリーン製造株式会社 Solar cell evaluation apparatus and solar cell evaluation method
US9209096B2 (en) 2010-07-30 2015-12-08 First Solar, Inc Photoluminescence measurement
US9075012B2 (en) * 2011-11-10 2015-07-07 Alliance For Sustainable Energy, Llc Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices
US8554353B2 (en) * 2011-12-14 2013-10-08 Gwangju Institute Of Science And Technology Fabrication system of CIGS thin film solar cell equipped with real-time analysis facilities for profiling the elemental components of CIGS thin film using laser-induced breakdown spectroscopy
JP2016059232A (en) * 2014-09-12 2016-04-21 東京電力株式会社 Method of determining damage to solar panel
DE102015208026A1 (en) 2015-03-03 2016-09-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Arrangement for the spatially resolved determination of the specific electrical resistance and / or the specific electrical conductivity of samples
EP3265788B1 (en) * 2015-03-03 2021-11-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Arrangement for spatially resolved determination of the specific electrical resistance and/or the specific electrical conductivity of samples
CN107271407B (en) * 2017-06-09 2020-11-24 佛山科学技术学院 In-situ detection device and method for photoluminescence spectrum of grown film
CN108844926B (en) * 2018-06-12 2020-10-16 中国科学院上海技术物理研究所 Magneto-optical photoluminescence light modulation reflection and light modulation transmission spectrum combined test system
CN109755147A (en) * 2018-11-26 2019-05-14 北京铂阳顶荣光伏科技有限公司 Membrane photovoltaic component test method and membrane photovoltaic component
CN115808382B (en) * 2023-02-02 2023-04-21 深圳裕典通微电子科技有限公司 Piezoelectric film on-line detection method and system applied to pressure sensor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367174A (en) * 1992-01-27 1994-11-22 Aerospatiale Societe Nationale Industrielle Defect detecting device for two-layer parts, in particular for solar cells
US6407809B1 (en) * 1999-05-24 2002-06-18 Nova Measuring Instruments Ltd. Optical inspection system and method
DE10123470A1 (en) * 2001-05-15 2002-11-21 Zeiss Carl Jena Gmbh Acquiring geometric and optical properties of the different layers of a layer system comprises using a measuring device and measuring methods for acquiring the properties of one of the layers
US20040135995A1 (en) * 2002-12-02 2004-07-15 Hendrix James Lee Spectroscopic ellipsometer wafer mapper for DUV to IR
EP1801569A2 (en) * 2005-12-23 2007-06-27 Basler Aktiengesellschaft Method and device for detecting cracks in silicon wafers
US20070181180A1 (en) * 2006-02-06 2007-08-09 Mau-Song Chou Methods and apparatus for inspection of multi-junction solar cells

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DE3274015D1 (en) * 1981-07-14 1986-12-04 Hitachi Ltd Pattern detection system
IL109589A0 (en) * 1993-05-14 1994-08-26 Hughes Aircraft Co Apparatus and method for performing high spatial resolution thin film layer thickness metrology
US20050174584A1 (en) * 2000-07-06 2005-08-11 Chalmers Scott A. Method and apparatus for high-speed thickness mapping of patterned thin films

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367174A (en) * 1992-01-27 1994-11-22 Aerospatiale Societe Nationale Industrielle Defect detecting device for two-layer parts, in particular for solar cells
US6407809B1 (en) * 1999-05-24 2002-06-18 Nova Measuring Instruments Ltd. Optical inspection system and method
DE10123470A1 (en) * 2001-05-15 2002-11-21 Zeiss Carl Jena Gmbh Acquiring geometric and optical properties of the different layers of a layer system comprises using a measuring device and measuring methods for acquiring the properties of one of the layers
US20040135995A1 (en) * 2002-12-02 2004-07-15 Hendrix James Lee Spectroscopic ellipsometer wafer mapper for DUV to IR
EP1801569A2 (en) * 2005-12-23 2007-06-27 Basler Aktiengesellschaft Method and device for detecting cracks in silicon wafers
US20070181180A1 (en) * 2006-02-06 2007-08-09 Mau-Song Chou Methods and apparatus for inspection of multi-junction solar cells

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FERLAUTO A S ET AL: "Analytical model for the optical functions of amorphous semiconductors and its applications for thin film solar cells", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 455-456, 1 May 2004 (2004-05-01), pages 388 - 392, XP004504814, ISSN: 0040-6090 *
FERLAUTO A S ET AL: "Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 92, no. 5, 1 September 2002 (2002-09-01), pages 2424 - 2436, XP012057136, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
WO2010007617A2 (en) 2010-01-21
EP2212680A2 (en) 2010-08-04
US20100006785A1 (en) 2010-01-14
JP2011528188A (en) 2011-11-10

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