WO2009158117A3 - Chemical modulation of electronic and magnetic properties of graphene - Google Patents

Chemical modulation of electronic and magnetic properties of graphene Download PDF

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Publication number
WO2009158117A3
WO2009158117A3 PCT/US2009/045735 US2009045735W WO2009158117A3 WO 2009158117 A3 WO2009158117 A3 WO 2009158117A3 US 2009045735 W US2009045735 W US 2009045735W WO 2009158117 A3 WO2009158117 A3 WO 2009158117A3
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WO
WIPO (PCT)
Prior art keywords
graphene
electronic
devices
allow
electronic structure
Prior art date
Application number
PCT/US2009/045735
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French (fr)
Other versions
WO2009158117A2 (en
Inventor
Robert C. Haddon
Mikhail E. Itkis
Palanisamy Ramesh
Elena Bekyarova
Sakhrat Khizroev
Jeongmin Hong
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The Regents Of The University Of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by The Regents Of The University Of California filed Critical The Regents Of The University Of California
Priority to US12/994,678 priority Critical patent/US20110068290A1/en
Publication of WO2009158117A2 publication Critical patent/WO2009158117A2/en
Publication of WO2009158117A3 publication Critical patent/WO2009158117A3/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B3/00—Electrolytic production of organic compounds
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B3/00—Electrolytic production of organic compounds
    • C25B3/20—Processes
    • C25B3/29—Coupling reactions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/005—Thin magnetic films, e.g. of one-domain structure organic or organo-metallic films, e.g. monomolecular films obtained by Langmuir-Blodgett technique, graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66045—Field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/22—Electronic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/193—Magnetic semiconductor compounds

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Compounds, compositions, systems and methods for the chemical and electrochemical modification of the electronic structure of graphene and especially epitaxial graphene (EG) are presented. Beneficially, such systems and methods allow the large-scale fabrication of electronic EG devices. Vigorous oxidative conditions may allow substantially complete removal of the EG carbon atoms and the generation of insulating regions; such processing is equivalent to that which is currently used in the semiconductor industry to lithographically etch or oxidize silicon and thereby define the physical features and electronic structure of the devices. However graphene offers an excellent opportunity for controlled modification of the hybridization of the carbon atoms from sp2 to sp3 states by chemical addition of organic functional groups. We show that such chemistries offer opportunities far beyond those currently employed in the semiconductor industry for control of the local electronic structure of the graphene sheet and do not require the physical removal of areas of graphene or its oxidation, in order to generate the full complement of electronic devices necessary to produce functional electronic circuitry. Selective saturation of the π-bonds opens a band gap in the graphene electronic structure which results in a semiconducting or insulating form of graphene, while allowing the insertion of new functionality with the possibility of 3-D electronic architectures. Beneficially, these techniques allow for large- scale fabrication of electronic EG devices and integrated circuits, as they allow the generation of wires (interconnects), semiconductors (transistors), dielectrics, and insulators.
PCT/US2009/045735 2008-05-30 2009-05-29 Chemical modulation of electronic and magnetic properties of graphene WO2009158117A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/994,678 US20110068290A1 (en) 2008-05-30 2009-05-29 Chemical modulation of electronic and magnetic properties of graphene

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5756508P 2008-05-30 2008-05-30
US61/057,565 2008-05-30

Publications (2)

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WO2009158117A2 WO2009158117A2 (en) 2009-12-30
WO2009158117A3 true WO2009158117A3 (en) 2010-03-25

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
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US8354323B2 (en) 2010-02-02 2013-01-15 Searete Llc Doped graphene electronic materials
US8426842B2 (en) 2010-02-02 2013-04-23 The Invention Science Fund I, Llc Doped graphene electronic materials
US8455981B2 (en) 2010-02-02 2013-06-04 The Invention Science Fund I, Llc Doped graphene electronic materials
US8563965B2 (en) 2010-02-02 2013-10-22 The Invention Science Fund I, Llc Doped graphene electronic materials
US8278643B2 (en) 2010-02-02 2012-10-02 Searete Llc Doped graphene electronic materials
CN101819843B (en) * 2010-03-30 2013-05-22 浙江大学 Method for preparing multifunctional graphite vinyl composite material with magnetic conductivity
WO2012041697A1 (en) 2010-09-27 2012-04-05 Carl Zeiss Smt Gmbh Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
CN103476878B (en) 2010-12-08 2015-09-16 黑达乐格瑞菲工业有限公司 Particulate material, the preparation comprising the matrix material of particulate material and application thereof
CN103181001B (en) 2010-12-30 2015-03-25 海洋王照明科技股份有限公司 Conductive polymer materials and preparing method and uses thereof
US9102540B2 (en) 2011-07-31 2015-08-11 International Business Machines Corporation Graphene nanomesh based charge sensor
US8900538B2 (en) 2011-07-31 2014-12-02 International Business Machines Corporation Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh
CN102583336B (en) * 2012-01-20 2014-09-03 厦门大学 Preparation method of magnetic-functionalized graphene composite material
WO2013113009A1 (en) 2012-01-27 2013-08-01 William Marsh Rice University Wellbore fluids incorporating magnetic carbon nanoribbons and magnetic functionalized carbon nanoribbons and methods of using the same
EP2859060A4 (en) * 2012-06-07 2015-12-30 Baker Hughes Inc Fluids for use with high-frequency downhole tools
US9097658B2 (en) 2012-12-06 2015-08-04 International Business Machines Corporation Carbon based biosensors and processes of manufacturing the same
US20140205796A1 (en) 2013-01-18 2014-07-24 International Business Machines Corporation Method of forming graphene nanomesh
US9504158B2 (en) 2014-04-22 2016-11-22 Facebook, Inc. Metal-free monolithic epitaxial graphene-on-diamond PWB
US9402322B1 (en) 2015-03-04 2016-07-26 Lockheed Martin Corporation Metal-free monolithic epitaxial graphene-on-diamond PWB with optical waveguide
WO2017046023A1 (en) * 2015-09-14 2017-03-23 University College Cork Semi-metal rectifying junction
GB201615820D0 (en) * 2016-09-16 2016-11-02 Univ Of Manchester The Production of functionalised graphene
CN107127351B (en) * 2017-05-03 2019-03-19 广州特种承压设备检测研究院 Graphene and ferroso-ferric oxide@metal/composite material and its preparation method and application
EP3694810A1 (en) * 2017-10-11 2020-08-19 Solvay Specialty Polymers Italy S.p.A. Fluoro-modified graphene and preparation method thereof
JPWO2022039251A1 (en) * 2020-08-20 2022-02-24

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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US20030199710A1 (en) * 2001-01-19 2003-10-23 Shenggao Liu Functionalized higher diamondoids
US20040110005A1 (en) * 2002-02-28 2004-06-10 Man Soo Choi Carbon nano particles having novel structure and properties
US20040247515A1 (en) * 2003-06-05 2004-12-09 Lockheed Martin Corporation Pure carbon isotropic alloy of allotropic forms of carbon including single-walled carbon nanotubes and diamond-like carbon
US20060063005A1 (en) * 2004-09-20 2006-03-23 Gardner Slade H Anisotropic carbon alloy having aligned carbon nanotubes

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