WO2009132011A3 - Bulk acoustic wave resonator - Google Patents

Bulk acoustic wave resonator Download PDF

Info

Publication number
WO2009132011A3
WO2009132011A3 PCT/US2009/041265 US2009041265W WO2009132011A3 WO 2009132011 A3 WO2009132011 A3 WO 2009132011A3 US 2009041265 W US2009041265 W US 2009041265W WO 2009132011 A3 WO2009132011 A3 WO 2009132011A3
Authority
WO
WIPO (PCT)
Prior art keywords
situated
controlled thickness
region
baw resonator
piezoelectric layer
Prior art date
Application number
PCT/US2009/041265
Other languages
French (fr)
Other versions
WO2009132011A2 (en
Inventor
Bradley P. Barber
Frank Bi
Craig E. Carpenter
Original Assignee
Avago Technologies Wireless Ip (Singapore) Pte. Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/150,244 external-priority patent/US7795781B2/en
Priority claimed from US12/150,240 external-priority patent/US7602102B1/en
Application filed by Avago Technologies Wireless Ip (Singapore) Pte. Ltd. filed Critical Avago Technologies Wireless Ip (Singapore) Pte. Ltd.
Priority to KR1020107014231A priority Critical patent/KR101352177B1/en
Priority to DE200911000947 priority patent/DE112009000947B4/en
Publication of WO2009132011A2 publication Critical patent/WO2009132011A2/en
Publication of WO2009132011A3 publication Critical patent/WO2009132011A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer situated between upper and lower electrodes, where each of the upper and lower electrodes are a high density metal. In one example, the BAW resonator further includes a controlled thickness region including a material segment that is one of a low density metal segment and a dielectric segment, where the material segment is situated adjacent to the piezoelectric layer, and where the controlled thickness region has controlled electromechanical coupling. The controlled thickness region can provide reduced electromechanical coupling into lateral modes. In another example, the piezoelectric layer has a disrupted texture region, where the disrupted texture region is situated in the controlled thickness region of the BAW resonator. The disrupted texture region can be situated at an edge of the BAW resonator and can extend along a perimeter of the BAW resonator.
PCT/US2009/041265 2008-04-24 2009-04-21 Bulk acoustic wave resonator WO2009132011A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020107014231A KR101352177B1 (en) 2008-04-24 2009-04-21 Bulk acoustic wave resonator
DE200911000947 DE112009000947B4 (en) 2008-04-24 2009-04-21 Volumenakustikwellenresonator

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/150,244 US7795781B2 (en) 2008-04-24 2008-04-24 Bulk acoustic wave resonator with reduced energy loss
US12/150,240 US7602102B1 (en) 2008-04-24 2008-04-24 Bulk acoustic wave resonator with controlled thickness region having controlled electromechanical coupling
US12/150,244 2008-04-24
US12/150,240 2008-04-24

Publications (2)

Publication Number Publication Date
WO2009132011A2 WO2009132011A2 (en) 2009-10-29
WO2009132011A3 true WO2009132011A3 (en) 2010-03-18

Family

ID=41217389

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/041265 WO2009132011A2 (en) 2008-04-24 2009-04-21 Bulk acoustic wave resonator

Country Status (3)

Country Link
KR (1) KR101352177B1 (en)
DE (1) DE112009000947B4 (en)
WO (1) WO2009132011A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101856060B1 (en) 2011-12-01 2018-05-10 삼성전자주식회사 Bulk acoustic wave resonator
RU2481699C1 (en) * 2012-01-10 2013-05-10 Корпорация "САМСУНГ ЭЛЕКТРОНИКС Ко., Лтд." Acoustic cavity resonator-based resonance structure
US10396755B2 (en) 2016-02-17 2019-08-27 Samsung Electro-Mechanics Co., Ltd. Resonator having frame and method of manufacturing the same
KR101843244B1 (en) 2016-02-17 2018-05-14 삼성전기주식회사 Acoustic resonator and manufacturing method thereof
US10873316B2 (en) 2017-03-02 2020-12-22 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method of manufacturing the same
DE102018104712B4 (en) * 2018-03-01 2020-03-12 RF360 Europe GmbH Process for forming an aluminum nitride layer
US11152913B2 (en) * 2018-03-28 2021-10-19 Qorvo Us, Inc. Bulk acoustic wave (BAW) resonator
CN115461988A (en) * 2020-04-24 2022-12-09 华为技术有限公司 Bulk acoustic wave device with improved piezoelectric polarization uniformity
CN112202415B (en) * 2020-09-25 2021-09-24 杭州星阖科技有限公司 Manufacturing process method of bulk acoustic wave resonator and bulk acoustic wave resonator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657363B1 (en) * 1998-05-08 2003-12-02 Infineon Technologies Ag Thin film piezoelectric resonator
JP2006109402A (en) * 2004-09-07 2006-04-20 Murata Mfg Co Ltd Method for manufacturing piezoelectric resonator
US20060226932A1 (en) * 2005-04-06 2006-10-12 Fazzio Ronald S Acoustic resonator performance enhancement using filled recessed region
JP2007006542A (en) * 2006-10-13 2007-01-11 Matsushita Electric Ind Co Ltd Piezoelectric thin film vibrator and resonant frequency adjusting method therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791434B2 (en) 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
JP2006319796A (en) * 2005-05-13 2006-11-24 Toshiba Corp Thin film bulk wave acoustic resonator
CN101278479B (en) * 2005-09-30 2011-04-13 Nxp股份有限公司 Improvements in or relating to thin-film bulk-acoustic wave (BAW) resonators
CN101292422B (en) * 2005-11-04 2013-01-16 株式会社村田制作所 Piezoelectric resonator, filter and dual-mode filter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657363B1 (en) * 1998-05-08 2003-12-02 Infineon Technologies Ag Thin film piezoelectric resonator
JP2006109402A (en) * 2004-09-07 2006-04-20 Murata Mfg Co Ltd Method for manufacturing piezoelectric resonator
US20060226932A1 (en) * 2005-04-06 2006-10-12 Fazzio Ronald S Acoustic resonator performance enhancement using filled recessed region
JP2007006542A (en) * 2006-10-13 2007-01-11 Matsushita Electric Ind Co Ltd Piezoelectric thin film vibrator and resonant frequency adjusting method therefor

Also Published As

Publication number Publication date
WO2009132011A2 (en) 2009-10-29
DE112009000947B4 (en) 2015-05-07
KR20110005232A (en) 2011-01-17
DE112009000947T5 (en) 2011-09-29
KR101352177B1 (en) 2014-01-15

Similar Documents

Publication Publication Date Title
WO2009132011A3 (en) Bulk acoustic wave resonator
EP4068627A4 (en) Bulk acoustic wave resonator having electrode having gap layer, and filter and electronic device
EP4027517A4 (en) Bulk acoustic wave resonator with piezoelectric layer having insert structure, and filter and electronic device
EP4087130A4 (en) Bulk acoustic resonator with bottom electrode as gap electrode, and filter and electronic device
WO2009028027A1 (en) Piezoelectric thin film resonator, filter using the resonator, duplexer using the filter, and communication equipment using the filter or the duplexer
WO2021053401A3 (en) Transducer structure for an acoustic wave device
WO2007036897A3 (en) Improvements in or relating to thin-film bulk-acoustic wave (baw) resonators
TW200644046A (en) Method for manufacturing a film bulk acoustic resonator
EP1962424A4 (en) Surface acoustic wave resonator, surface acoustic wave filter using the surface acoustic wave resonator, and antenna duplexer
WO2010088464A3 (en) Thin-film bulk acoustic resonators having perforated bodies that provide reduced susceptibility to process-induced lateral dimension variations
IN2012DN02455A (en)
WO2005122390A3 (en) Oscillator
JP4992911B2 (en) Surface acoustic wave device
WO2006023892A3 (en) Capacitive vertical silicon bulk acoustic resonator
EP1821406A3 (en) Lamb wave type frequency device and method thereof
EP4113838A4 (en) Bulk acoustic wave resonator with electrode having void layer, filter and electronic device
WO2009075088A1 (en) Surface acoustic wave device and duplexer
TW200509525A (en) Acoustic reflector for a BAW resonator
WO2009022410A1 (en) Elastic boundary wave device
EP4080764A4 (en) Bulk acoustic resonator having electrode having gap layer and temperature compensation layer, filter, and electronic apparatus
EP2211462A3 (en) Acoustic wave device
WO2006032335A8 (en) Saw-component having a reduced temperature path and method for the production thereof
WO2009011022A1 (en) Piezoelectric thin film resonant element and circuit component using the same
WO2006098743A3 (en) Internal electrostatic transduction structures for bulk-mode micromechanical resonators
JP2006339742A (en) Surface acoustic wave device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09735647

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 20107014231

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 09735647

Country of ref document: EP

Kind code of ref document: A2