WO2009131426A2 - Structure de câblage optique et sa méthode de production - Google Patents

Structure de câblage optique et sa méthode de production Download PDF

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Publication number
WO2009131426A2
WO2009131426A2 PCT/KR2009/002191 KR2009002191W WO2009131426A2 WO 2009131426 A2 WO2009131426 A2 WO 2009131426A2 KR 2009002191 W KR2009002191 W KR 2009002191W WO 2009131426 A2 WO2009131426 A2 WO 2009131426A2
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WO
WIPO (PCT)
Prior art keywords
silicon substrate
optical
forming
via holes
lens
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PCT/KR2009/002191
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English (en)
Korean (ko)
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WO2009131426A3 (fr
Inventor
이용탁
송영민
민은경
Original Assignee
광주과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from KR1020080039080A external-priority patent/KR101251028B1/ko
Priority claimed from KR1020090036022A external-priority patent/KR101233311B1/ko
Application filed by 광주과학기술원 filed Critical 광주과학기술원
Publication of WO2009131426A2 publication Critical patent/WO2009131426A2/fr
Publication of WO2009131426A3 publication Critical patent/WO2009131426A3/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12002—Three-dimensional structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections

Definitions

  • the present invention relates to an optical wiring structure and a method for manufacturing the same. More particularly, an optical wiring in which a microlens based on silicon is integrated or a spherical ball lens is inserted and fixed inside an via hole for an optical path formed on a silicon substrate. It relates to a structure and a method of manufacturing the same.
  • optical wiring technology has recently been actively conducted to solve the disadvantages such as data transmission speed limitation of the existing electrical wiring, high crosstalk between the wiring.
  • Such optical wiring technology includes a fiber optic ribbon, a free space optical connection, a planar optical waveguide, and the like, and are developed in different structures according to application fields.
  • the optical wiring technology is mostly made by modifying the existing printed circuit board (PCB) substrate.
  • PCB printed circuit board
  • optical connection using a planar optical waveguide connects an optical signal using a 45 degree mirror or a grating coupler for vertical optical coupling on a PCB substrate on which the optical waveguide is integrated.
  • the present invention has been made to solve the above problems, an object of the present invention is to mass production using a silicon substrate, and to provide an optical wiring structure and a method of manufacturing the same to have a good thermal characteristics compared to a conventional PCB substrate. It is.
  • Another object of the present invention is to improve the reproducibility and yield compared to the existing external condenser lens by inserting and fixing a spherical ball lens inside the via hole for the optical path formed on the silicon substrate or integrated microlens based on silicon.
  • An optical wiring structure and a method of manufacturing the same are provided.
  • the silicon substrate having at least one groove for forming a lens to have a radius of curvature on the upper surface; And a silica layer formed on the silicon substrate including the lens forming groove so that the shape of the lens forming groove is maintained.
  • the via hole may be further formed on the lower surface of the silicon substrate so that a portion of the lower surface of the silica layer formed in the lens forming groove is exposed.
  • An optical waveguide made of may be further provided.
  • the first and second via holes may be closed.
  • a laser and a photo diode are further provided on the bottom surface of the silicon substrate, and a driver for driving the laser diode and a receiving module for converting the received optical signal into an electrical signal may be attached to one side of the bottom surface of the silicon substrate.
  • the driver and the receiving module may be attached by wire bonding or flip chip bonding, or may be manufactured in a single substrate integrated form on the silicon substrate.
  • first and second mirror grooves inclined at a predetermined angle may be further formed on upper surfaces of the optical waveguides positioned on the first and second lens forming grooves so as to face each other.
  • the first and second mirror grooves are formed in a V-shape to be inclined at a 45 degree angle to face each other from the ground, or to face each other in a direction between the first and second lens forming grooves. It may be formed in a right triangle inclined at an angle.
  • a microlens formed on the silica layer to be embedded in the lens forming groove of the silicon substrate may be further provided.
  • the lens forming groove, the via hole, and the microlens are provided with two first and second lens forming grooves, first and second via holes, and first and second microlenses spaced apart from each other, respectively.
  • a laser and a photodiode are further attached to the lower surface of the silicon substrate so that the first and second via holes are closed.
  • Receiving modules for converting a signal into an electrical signal, respectively, and an optical connecting member having a first and second optical fibers therein is attached to an upper surface of the silica layer, wherein the optical connecting member is connected to the optical fiber through the first and second optical fibers. It may be attached to the upper surface of the silica layer to transmit light to the first and second microlens.
  • the optical connection member and the silica layer may be attached to be spaced apart by a predetermined interval using a spacer.
  • the radius of curvature of the lens forming groove may be in the range of 50 ⁇ m to 200 ⁇ m.
  • the silicon substrate having at least one via-hole for the optical path; And it is to provide an optical wiring structure including a spherical ball lens for condensing the light is inserted and fixed inside the upper side of the via hole.
  • the optical waveguide may further include a lower cladding layer formed on the entire upper surface of the silicon substrate, a core layer formed on the upper surface of the lower cladding layer, and an upper cladding layer formed on the upper surface of the core layer.
  • a laser diode and a photo diode attached to the lower surface of the silicon substrate are further attached to close the first and second via holes.
  • a driver for driving the laser diode and a receiving module for converting the received optical signal into an electrical signal may be attached to one side of a lower surface of the silicon substrate.
  • the driver and the receiving module may be attached by wire bonding or flip chip bonding, or may be manufactured in a single substrate integrated form on the silicon substrate.
  • first and second mirror grooves inclined at a predetermined angle may be further formed on upper surfaces of the optical waveguides positioned on the first and second via holes to face each other.
  • the first and second mirror grooves are formed in a V-shape to be inclined at a 45 degree angle to face each other from the ground, or at a 45 degree angle to face each other in a direction between the first and second via holes. It may be formed obliquely right triangle shape.
  • the contact portion may be fixed by forming an oxide layer on the surface of the silicon substrate due to the volume expansion of the inner peripheral surface portion of the via hole in contact with the ball lens.
  • a method of manufacturing a semiconductor device comprising: (a) forming at least one groove for forming a lens to have a radius of curvature on an upper surface of a silicon substrate; And (b) forming a silica layer on the entire upper surface of the silicon substrate including the lens forming groove so that the shape of the lens forming groove is maintained.
  • the wet etching method is a solution of hydrofluoric acid, nitric acid and acetic acid mixed in a predetermined ratio, the etching rate, the surface roughness and the isotropic degree can be adjusted according to the volume ratio of each solution.
  • the method may further include forming an optical waveguide by sequentially laminating a lower cladding layer, a core layer, and an upper cladding layer on the entire upper surface of the silicon substrate.
  • the method may further include forming a via hole to expose a portion of the lower surface of the silica layer formed in the lens forming groove on the lower surface of the silicon substrate.
  • the lens forming grooves and the via holes are formed of two first and second lens forming grooves and first and second via holes spaced apart from each other, the first and second via holes are closed.
  • a laser and a photodiode may be further attached to the lower surface of the silicon substrate, and a driver for driving the laser diode and a receiving module for converting the received optical signal into an electrical signal may be further attached to one side of the lower surface of the silicon substrate.
  • the driver and the receiving module may be attached by wire bonding or flip chip bonding, or may be manufactured in a single substrate integrated form on the silicon substrate.
  • the method may further include forming first and second mirror grooves that are inclined at a predetermined angle so as to face each other on the upper surfaces of the optical waveguides positioned on the first and second lens forming grooves.
  • the first and second mirror grooves are formed in a V shape to be inclined at an angle of 45 degrees to face each other from the ground using a laser or a blade, or between the first and second lens forming grooves. It may be formed in a right triangle inclined at an angle of 45 degrees to face each other in the direction.
  • the method may further include forming a microlens on the silica layer to be embedded in the lens forming groove of the silicon substrate.
  • the lens forming groove, the via hole and the micro lens are formed of two first and second lens forming grooves, first and second via holes, and first and second micro lenses, respectively, spaced apart from each other by a predetermined distance.
  • a laser and a photodiode are further attached to the lower surface of the silicon substrate so that the first and second via holes are closed, and a driver and a received optical signal for driving the laser diode are connected to one side of the lower surface of the silicon substrate.
  • a receiving module for converting into a signal is further attached, and an optical connecting member having first and second optical fibers embedded therein is attached to an upper surface of the silica layer, wherein the optical connecting member is connected to the first optical fiber through the first and second optical fibers. And an upper surface of the silica layer to transmit light to the second microlens.
  • the optical connection member and the silica layer may be attached to be spaced apart by a predetermined interval using a spacer.
  • the radius of curvature of the lens forming groove may be in the range of 50 ⁇ m to 200 ⁇ m.
  • a fourth aspect of the invention (a ') forming at least one via hole for the optical path in the silicon substrate; And (b ') inserting and fixing a spherical ball lens for condensing light incident inside the upper side of the via hole.
  • the step (a) preferably further comprising the step of sequentially stacking the lower cladding layer, the core layer and the upper cladding layer on the entire upper surface of the silicon substrate to form an optical waveguide.
  • the waveguide material may be a transparent material that does not absorb the wavelength of the light source used, such as silica, glass, or polymer.
  • a laser diode and a photo diode are further attached to the bottom surface of the silicon substrate so that the first and second via holes are closed.
  • a driver for driving the laser diode and a receiving module for converting the received optical signal into an electrical signal may be further attached to one side of a lower surface of the silicon substrate.
  • the driver and the receiving module may be attached by wire bonding or flip chip bonding, or may be manufactured in a single substrate integrated form on the silicon substrate.
  • the method may further include forming first and second mirror grooves which are inclined at an angle to face the top surfaces of the optical waveguides positioned on the first and second via holes.
  • the first and second mirror grooves are formed in a V shape to be inclined at a 45 degree angle to face each other from the ground using an imprint pattern transfer etching process, or the direction between the first and second via holes. It may be formed in a right triangle to be inclined at an angle of 45 degrees to face each other.
  • the imprint pattern transfer etching process the first process of applying a resist layer on the optical waveguide;
  • a third process of forming first and second mirror grooves on the optical waveguide at a desired angle by using an etching rate difference between the resist and the optical waveguide material through dry etching using the resist pattern as a mask. have.
  • the first and second mirror grooves are formed in a V-shape to be inclined at a 45 degree angle to face each other from the ground, or at a 45 degree angle to face each other in a direction between the first and second via holes.
  • the optical wiring structure and the manufacturing method of the present invention as described above, by manufacturing the optical wiring structure integrated with a microlens using a silicon substrate to increase the light collection efficiency to reduce the light loss due to the optical connection and by the pattern transfer method By forming a 45 degree mirror groove in the waveguide, the reproducibility and yield of the process can be improved. Most of these processes are performed through semiconductor process equipment, which enables mass production, and has the advantage of having good thermal characteristics compared to conventional PCB substrates.
  • microlenses since the microlenses have an integrated optical wiring structure, there is an advantage that no additional lens needs to be separately mounted.
  • 1 to 7 are cross-sectional views illustrating a method of manufacturing an optical wiring structure according to a first embodiment of the present invention.
  • FIGS. 8 to 11 are cross-sectional views illustrating a method of manufacturing the optical wiring structure according to the second embodiment of the present invention.
  • FIGS. 12 to 14 are plan and cross-sectional views illustrating a method of manufacturing an optical wiring structure according to a third embodiment of the present invention.
  • 15 is a cross-sectional view for describing an optical wiring structure according to a fourth embodiment of the present invention.
  • 16 to 21 are cross-sectional views illustrating a method of manufacturing an optical wiring structure according to a fourth embodiment of the present invention.
  • 22 to 25 are cross-sectional views for explaining an example of a method of forming a mirror groove applied to the fourth embodiment of the present invention.
  • 26 to 28 are cross-sectional views for explaining another example of the method for forming the mirror groove applied to the fourth embodiment of the present invention.
  • 1 to 7 are cross-sectional views illustrating a method of manufacturing an optical wiring structure according to a first embodiment of the present invention.
  • the silicon substrate 10 and the silica layer 30 are largely comprised.
  • At least one lens forming groove 10a is provided on the upper surface of the silicon substrate 10 to have a predetermined radius of curvature (see FIG. 1).
  • the lens forming groove 10a is formed, for example, in a hemispherical shape, and the radius of curvature thereof may be in a range of about 50 ⁇ m to 200 ⁇ m.
  • the silica layer 30 is formed on the upper surface of the silicon substrate 10 including the lens forming grooves 10a so as to maintain the shape of the lens forming grooves 10a in a thickness of several micrometers (FIG. 2). Reference).
  • the via hole 70 may be further formed on the bottom surface of the silicon substrate 10 so that a portion of the bottom surface of the silica layer 30 formed in the lens forming groove 10a (preferably, the center portion) is exposed (FIG. 5).
  • the lower cladding layer 40 formed on the entire upper surface of the silica layer 30 so as to be embedded in the lens forming groove 10a of the silicon substrate 10, and the core layer formed on the upper surface of the lower cladding layer 40 ( 50 and an optical waveguide including an upper cladding layer 60 formed on the upper surface of the core layer 50 may be further provided.
  • the solder bumps 140 may be closed so that each via hole 70 is closed.
  • the laser diodes LD and 90 and the photodiodes PD and 100 may be further attached to the bottom surface of the silicon substrate 10 by using a light source or the like.
  • the laser diode 90 is a vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser)
  • the photodiode 100 is a pin photodiode
  • a metal-semiconductor-metal (MSM) photo It is preferable to use a diode, a RC (Resonant Cavity) photodiode, an Avalanche photodiode, or the like.
  • a receiver 120 for converting an optical signal received on the other side into an electrical signal, and connected thereto Very Large Scale Integrated Circuit (VLSI) 130 may be attached.
  • VLSI Very Large Scale Integrated Circuit
  • the driver 110, the receiving module 120, and the VLSI 130 may be attached by, for example, wire bonding, flip chip bonding, or the like, and may also be manufactured in the form of a single substrate integrated on the silicon substrate 10. .
  • a pair of mirror grooves 80 inclined at a predetermined angle may be further formed on an upper surface of the optical waveguide positioned on each lens forming groove 10a so as to face each other using, for example, a laser or a blade. It may be.
  • the pair of mirror grooves 80 are preferably formed in a V-shape to be inclined at a predetermined angle (preferably, about 45 degrees) so as to face each other from the ground, but is not limited thereto, and each lens forming groove is not limited thereto. It may be formed in the form of a right triangle inclined at an angle of 45 degrees to face each other in the direction between (10a). In addition, in order to further increase the reflectance, a metal may be deposited on the inclined surface of the mirror groove 80.
  • a circular mask pattern 20 is formed on a silicon substrate 10 through a conventional photolithography process.
  • photoresist, SiO 2, or SiN x may be used as the mask pattern 20.
  • the silicon substrate 10 is etched by, for example, a wet or dry etching method to form a lens curved surface having a radius of about 50 ⁇ m to 200 ⁇ m, that is, a lens forming groove 10a. 20) Remove.
  • the wet etching method of the silicon substrate 10 may use, for example, a solution (eg, HNA) in which a hydrofluoric acid, nitric acid, and acetic acid solution is mixed. I can regulate it.
  • a solution eg, HNA
  • HNA hydrofluoric acid, nitric acid, and acetic acid solution
  • the silicon substrate 10 may be etched using chemical vapor etching (CVE).
  • CVE chemical vapor etching
  • the chemical vapor etching of the silicon substrate 10 may be performed by mixing hydrofluoric acid and nitric acid on the silicon substrate 10. It can be carried out by exposure to acid vapours, and the etching rate, surface roughness, isotropy, etc. can be adjusted according to the volume ratio of each solution and the temperature at the time of vaporization.
  • an oxidation method, a chemical vapor deposition (CVD) method, a sputtering method, and a flame hydrolysis are performed on a silicon substrate 10 having a lens forming groove 10a.
  • a silica layer 30 of several micrometers is formed using a Flame Hydrolysis Deposition (FHD) method, a Sol-Gel method, or the like.
  • FHD Flame Hydrolysis Deposition
  • oxidation method for example, general oxidation methods such as wet oxidation, dry oxidation, and high pressure oxidation may be used.
  • the silica layer 30 is preferably formed on the entire upper surface of the silicon substrate 10 including the lens forming groove 10a so that the shape of the lens forming groove 10a is maintained as it is.
  • the lower cladding layer 40, the core layer 50, and the upper cladding layer 60 are sequentially stacked on the entire upper surface of the silica layer 30 to form an optical waveguide.
  • a material for forming an optical waveguide composed of the lower and upper cladding layers 40 and 60 and the core layer 50 for example, silica, glass, or polymer may be used.
  • the polymer material for example, photolithography, RIE, molding, hot embossing, UV patterning, laser direct description, or the like used in a semiconductor process may be used.
  • a silica material for example, a chemical vapor deposition (CVD) method, a sputtering method, a flame hydrolysis (FHD) method, a sol-gel method, or the like may be used.
  • CVD chemical vapor deposition
  • FHD flame hydrolysis
  • a via hole 70 is formed in the lower surface of the silicon substrate 10 having the lens forming groove 10a.
  • the via hole 70 may be formed by, for example, anisotropic etching, and is etched until the lens forming groove 10a is exposed, that is, a portion of the lower surface of the silica layer 30 is exposed.
  • etching is performed through a material that is a selective etching between silicon and silica to maintain the shape of the lens forming groove 10a.
  • a driver 110 for driving a laser diode 90 (refer to FIG. 7) according to an electrical signal on a lower surface of the silicon substrate 10, and a photodiode receiver for converting the supplied optical signal into an electrical signal ( Receiver, that is, the receiving module 120 and the VLSI 130 connected thereto are attached by wire bonding or flip chip bonding, or the silicon substrate 10 is subjected to a single complementary metal oxide semiconductor (CMOS) process through a single substrate.
  • CMOS complementary metal oxide semiconductor
  • a pair of mirror grooves 80 inclined at a predetermined angle are disposed so as to face each other on an upper surface of an optical waveguide positioned on each lens forming groove 10a.
  • the laser diode 100 and the photodiode 110 are attached to the bottom surface of the silicon substrate 10 using solder bumps 140 to close each via hole 70.
  • the mirror groove 80 may be formed using, for example, a laser or a blade, and metal deposition may be performed on the inclined surface portion to further increase the reflectance of the mirror groove 80.
  • FIGS. 8 to 11 are cross-sectional views illustrating a method of manufacturing the optical wiring structure according to the second embodiment of the present invention.
  • the via hole 70 is formed on the bottom surface of the silicon substrate 10 after the process up to FIG. 3 is performed. Since the formation of the via hole 70 is the same as that of the first embodiment of the present invention, a detailed description thereof will be omitted.
  • the microlens 150 may be formed by filling the silica layer 30 with a polymer or silica-based material in the lens forming groove 10a (see FIG. 3).
  • the material filled in the microlens 150 may be flattened, and may be planarized through, for example, a front surface etching or a CMP process, as necessary.
  • the driver 110, the receiving module 120, the VLSI 130, and the like are formed on the lower surface of the silicon substrate 10 as in FIG. 6 described above.
  • an optical connection member 160 (for example, MT ferrule, etc.) in which the optical fiber 170 is embedded is attached to the upper portion of the silicon substrate 10, and as in FIG. 7 described above, The laser diode 100 and the photodiode 110 are attached to each of the via holes 70 by using solder bumps 140 to close the via holes 70.
  • the optical connecting member 160 and the silicon substrate 10 may be directly attached using, for example, a guide pin, or in some cases, a distance may be provided using a spacer 180 (see FIG. 11). .
  • the optical connection member 160 is preferably attached to the upper surface of the silica layer 30 so that light can be transmitted to the microlens 150 through the optical fiber 170.
  • the optical fiber 170 embedded in the optical connecting member 160 preferably uses a multi-mode optical fiber having a core size of about 50 ⁇ m to 100 ⁇ m, and in some cases using a single mode using a spacer. Optical fibers may also be used.
  • FIGS. 12 to 14 are plan and cross-sectional views illustrating a method for manufacturing an optical wiring structure according to a third embodiment of the present invention.
  • a lens curved surface for arranging a plurality of laser diodes LD and photodiodes PD that is, a lens forming groove 10a, is formed on the silicon substrate 10.
  • the entire device formed as an array on the lower surface of the silicon substrate 10 may be driven or may be individually.
  • the driver 110, the receiving module 120, the VLSI 130, and the like are formed in a conventional CMOS process, the arrayed laser diode 90-1 and the photodiode 100-1 are attached.
  • the laser diode array is characterized in that the array 4 ⁇ 4 channel parallel optical connection as shown in Figure 14 in order to increase the integration while maintaining the interval between about 250 ⁇ m, the conventional laser diode.
  • 15 is a cross-sectional view for describing an optical wiring structure according to a fourth embodiment of the present invention.
  • an optical wiring structure according to a fourth exemplary embodiment of the present invention may be inserted into a silicon substrate 10 having at least one via hole 70 and fixedly inserted into the via hole 70.
  • the lower cladding layer 40, the core layer 50, and the upper cladding layer 60 are sequentially formed on the lens L for condensing light and formed on the entire upper surface of the silicon substrate 10 to transmit an optical signal.
  • a photodiode (PD) 100 a photodiode (PD) 100.
  • At least one via hole 70 is formed on the silicon substrate 10 to serve as an optical path through, for example, anisotropic etching.
  • the silicon substrate 10 although there is no thickness limit of the silicon substrate 10, a substrate thickness in the range of about 0.1 mm to 5 mm can be generally used, and the substrate surface is [100], [110], [111] or [211]. Although it is possible to use a surface such as, it is preferable to apply a silicon substrate of the [100] surface which is usually used as a silicon substrate.
  • the lens L is made of, for example, silica, glass, or the like.
  • the lens L is preferably implemented as a ball lens in the form of a sphere, and the lens L is fixed to fix the lens L.
  • the inner circumferential surface of the silicon via hole 70 in contact with the c) may be oxidized and swelled, or may be firmly fixed to the inner circumferential surface using, for example, epoxy.
  • the optical waveguide is disposed on the lower cladding layer 40 formed on the entire upper surface of the silicon substrate 10, the core layer 50 formed on the upper surface of the lower cladding layer 40, and the upper surface of the core layer 50.
  • the upper cladding layer 60 is formed.
  • a pair of mirror grooves 80 inclined at an angle are formed in the optical waveguides located on each via hole 70 so as to face each other using, for example, an imprint pattern transfer method.
  • the pair of mirror grooves 80 are preferably formed in a V shape to be inclined at a predetermined angle (preferably, about 45 degrees) to face each other from the ground, but is not limited thereto.
  • Each via hole 70 It may be formed in the form of a right triangle to be inclined at an angle of 45 degrees to face each other in the direction between), and may be deposited on the inclined surface of the mirror groove 80 to further increase the reflectance.
  • two via holes 70 are formed at a predetermined interval below each of the optical waveguides, and a laser diode 90 and a photo diode (center) of each via hole 70 are respectively formed.
  • the laser diode 90 and the photodiode 100 may be attached to the lower surface of the silicon substrate 10 using the solder bumps 140 and the like so that the center thereof is positioned.
  • the laser diode 90 is a vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser)
  • the photodiode 100 is a pin photodiode
  • a metal-semiconductor-metal (MSM) photo It is preferable to use a diode, a RC (Resonant Cavity) photodiode, an Avalanche photodiode, or the like.
  • a receiver 120 for converting an optical signal received on the other side into an electrical signal, and connected thereto Very Large Scale Integrated Circuit (VLSI) 130 may be attached.
  • VLSI Very Large Scale Integrated Circuit
  • the driver 110, the receiving module 120, and the VLSI 130 may be attached by, for example, wire bonding, flip chip bonding, or the like, and may also be manufactured in the form of a single substrate integrated on the silicon substrate 10. .
  • 16 to 21 are cross-sectional views illustrating a method of manufacturing an optical wiring structure according to a fourth embodiment of the present invention.
  • the lower cladding layer 40, the core layer 50, and the upper cladding layer 60 are sequentially stacked on the entire upper surface of the silicon substrate 10 to form an optical waveguide.
  • a material for forming the waveguide formed of the lower and upper cladding layers 40 and 60 and the core layer 50 for example, silica, glass, or polymer may be used.
  • the polymer material for example, photolithography, reactive ion etching (RIE), molding, hot embossing, UV patterning, laser direct description, or the like used in a semiconductor process may be used.
  • silica material for example, a chemical vapor deposition (CVD) method, a sputtering method, a flame hydrolysis (FHD) method, a sol-gel method, or the like may be used.
  • CVD chemical vapor deposition
  • FHD flame hydrolysis
  • a via hole 70 which is an optical path having a cross section perpendicular to the silicon substrate 10, is formed on a bottom surface of the silicon substrate 10.
  • the via hole 70 may be formed by, for example, anisotropic etching using plasma ion etching (PIE), and may be etched to expose the lower cladding layer 40 of the optical waveguide.
  • PIE plasma ion etching
  • an oxide layer S is formed on the entire surface of the silicon substrate 10. Due to the volume expansion of the portion of the inner circumferential surface of the via hole 70 in contact with the lens L, the contact portion is fixed.
  • the oxidation method may use a conventional silicon oxidation method, as described above, the oxide layer S formed on the entire surface of the silicon substrate 10 may be oxidized except for some regions, or may be etched after oxidizing some regions. And the like can be removed.
  • the inner peripheral surface portion of the via hole 70 in contact with the lens L may be firmly fixed using, for example, epoxy, or the inner peripheral surface portion of the via hole 70 in contact with the lens L. It is also possible to apply a high temperature so that the contact area is attached by the material property.
  • a driver 110 for driving a laser diode 90 (refer to FIG. 2F) according to an electrical signal on a lower surface of the silicon substrate 10, and a photodiode receiver for converting the supplied optical signal into an electrical signal ( Receiver, that is, the receiving module 120 and the VLSI 130 connected thereto are attached by wire bonding or flip chip bonding, or a single substrate is performed on the silicon substrate 10 through a common Complementary Metal Oxide Semiconductor (CMOS) process. Manufactured in integrated form.
  • CMOS Complementary Metal Oxide Semiconductor
  • a pair of mirror grooves 80 inclined at a predetermined angle are formed on the upper surfaces of the optical waveguides located on each via hole 70.
  • the laser diode 100 and the photodiode 110 are attached to the bottom surface of the silicon substrate 10 using solder bumps 140 to close each via hole 70.
  • the mirror groove 80 may be formed using, for example, laser or blade grinding as in the prior art. As will be described below, an imprint pattern transfer technique and a crystal surface of a silicon wafer may be used. Using the etching method has the advantage of being able to adjust the inclination angle accurately. In order to further increase the reflectance of the mirror groove 80, metal deposition may be performed on the inclined surface portion.
  • 22 to 25 are cross-sectional views illustrating an example of a method of forming the mirror groove applied to the fourth embodiment of the present invention, and a method of forming the mirror groove 80 by using an imprint pattern transfer technique. It is shown.
  • a resist layer 200 is coated on an upper cladding layer 60 of an optical waveguide to be imprinted.
  • the resist layer 200 generally uses a polymer-based resin, but in the case of an ultraviolet (UV) method, it is preferable to use an ultraviolet curable polymer series.
  • UV ultraviolet
  • the coating method of the resist layer 200 various methods such as spin coating, droplet dispensing, and spray may be used, but spin coating is preferable.
  • the stamper 300 on which the mirror groove forming pattern 300a is formed is brought into contact with the upper surface of the resist layer 200 and pressed at a predetermined pressure, and then exposed to ultraviolet rays or heat. Add.
  • the ultraviolet light is transmitted to the resist layer 200 through the stamper 300. Accordingly, after the resist layer 200 exposed to ultraviolet rays or heat is cured, the resist layer 200 is separated to form a resist pattern 200a for forming a mirror groove.
  • lithography processes using imprints require the resist layer 200 to be cured by ultraviolet (UV) or thermal energy. That is, in thermal imprinting, when the stamper 300, the optical waveguide, or both are heated to soften the resist layer 200 during the imprinting process and then cooled, the imprinted resist pattern 200a becomes solid to form the stamper 300. Maintain the imprinted shape after removal.
  • UV ultraviolet
  • thermal imprinting when the stamper 300, the optical waveguide, or both are heated to soften the resist layer 200 during the imprinting process and then cooled, the imprinted resist pattern 200a becomes solid to form the stamper 300. Maintain the imprinted shape after removal.
  • the transparent stamper 300 exerts pressure on the upper cladding layer 60 coated with, for example, a liquid photopolymer resist layer 200.
  • the resist layer 200 is polymerized into a solid due to the photoinitiator in the resist, leaving a solidified resist pattern 200a in the cured resist layer 200.
  • Pressure may be applied to the silicon substrate 10 on which the stamper 300 and / or the optical waveguide are formed during the curing process to ensure the complete formation of the resist pattern 200a.
  • a V-shaped groove pattern is transferred to an optical waveguide layer using a dry etching method such as reactive ion etching (RIE) using the resist pattern 200a as a pattern transfer mask.
  • RIE reactive ion etching
  • the residual resist is removed to form an optical waveguide in which the aforementioned mirror grooves 80 are formed.
  • the mirror groove 80 is preferably formed to be inclined at a predetermined angle (preferably, 45 degrees) so as to face each other as described above.
  • the etching pattern ratio between the optical waveguide and the resist is accurately known and used during the dry etching of the resist pattern 200a, it may be implemented to transfer the inclination angle different from the imprinted resist inclination angle to the waveguide.
  • the inclination angle of the mirror groove 80 can be easily adjusted by adjusting the etching rate ratio and the imprint inclination angle between the two materials. That is, when using the imprint method it is easy to adjust the inclination angle.
  • 26 to 28 are cross-sectional views illustrating another example of a method of forming a mirror groove applied to the fourth exemplary embodiment of the present invention, wherein the silicon layer 400 for forming the mirror groove of the same material as the silicon substrate 10 is formed.
  • a method of forming the mirror groove 80 by using a regular crystal direction is shown.
  • a silicon layer 400 having a predetermined thickness or a silicon substrate may be attached to an upper cladding layer 60 of an optical waveguide.
  • the silicon layer 400 may be a silicon wafer or grown silicon as long as it can be etched in the crystal direction to have a predetermined inclination angle.
  • a mask pattern 500 for forming an auxiliary mirror groove is formed on the silicon layer 400 through a conventional photolithography process.
  • photoresist SiO 2, or SiN x may be used as the mask pattern 500.
  • the auxiliary mirror groove 80a is formed in the same shape as the mirror groove 80 described above.
  • the silicon pattern 400a is formed by removing the mask pattern 500.
  • the wet etching method of the silicon layer 400 may use, for example, a solution (eg, HNA) in which a hydrofluoric acid, nitric acid, and acetic acid solution is mixed.
  • a solution eg, HNA
  • the etching rate, surface roughness, anisotropy, and the like may be varied depending on the volume ratio of each solution. Can be adjusted.
  • the auxiliary mirror groove 80a may be inclined at a more accurate angle (preferably, 45 degrees) due to the regular crystallographic direction of silicon.
  • the mirror groove pattern is transferred to the waveguide layer by dry etching such as reactive ion etching (RIE) using the silicon pattern 400a as a pattern transfer mask, and the residual silicon layer is removed.
  • RIE reactive ion etching
  • an optical waveguide in which the aforementioned mirror groove 80 is formed is formed.
  • the mirror groove 80 is preferably formed to be inclined at a predetermined angle (preferably, 45 degrees) so as to face each other as described above.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Optical Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

La présente invention concerne une structure de câblage optique et sa méthode de production. La structure de câblage optique comprend un substrat de silicium creusé d'au moins une cavité de formation de lentille dont la surface supérieure présente un rayon de courbure; et une couche de dioxyde de silicium formée sur le substrat de silicium présentant la cavité de formation de lentille pour conserver la forme de cette cavité. Comme la plupart des procédés sont mis en oeuvre au moyen d'un matériel de traitement de semiconducteurs, une production en série peut être réalisée et des caractéristiques thermiques supérieures à celles des substrats de PCB classiques sont obtenues.
PCT/KR2009/002191 2008-04-26 2009-04-27 Structure de câblage optique et sa méthode de production WO2009131426A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020080039080A KR101251028B1 (ko) 2008-04-26 2008-04-26 광배선 구조물 및 그 제조방법
KR10-2008-0039080 2008-04-26
KR1020090036022A KR101233311B1 (ko) 2009-04-24 2009-04-24 광배선 구조물 및 그 제조방법
KR10-2009-0036022 2009-04-24

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WO2009131426A2 true WO2009131426A2 (fr) 2009-10-29
WO2009131426A3 WO2009131426A3 (fr) 2010-01-21

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN105547485A (zh) * 2015-12-04 2016-05-04 哈尔滨工业大学 基于微透镜阵列与调制激光的火焰温度泛尺度光场探测方法
CN105571741A (zh) * 2015-12-04 2016-05-11 哈尔滨工业大学 基于微透镜阵列与连续激光的火焰温度泛尺度光场探测方法
EP3215877A4 (fr) * 2014-11-05 2018-06-27 Fastlight Techonologies Ltd. Infrastructures de réseau à base électro-optique pour des systèmes de télécommunication

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US20050088551A1 (en) * 2003-01-16 2005-04-28 Samsung Electronics Co., Ltd. Structure of a CMOS image sensor and method for fabricating the same
US20060113898A1 (en) * 2004-11-29 2006-06-01 Seiko Epson Corporation Transparent substrate, electro-optical device, image forming device and method for manufacturing electro-optical device

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KR20020020085A (ko) * 2000-09-07 2002-03-14 구자홍 집적된 마이크로 렌즈를 이용한 평행 빔 인터페이스 구조및 그 제조방법
US20050088551A1 (en) * 2003-01-16 2005-04-28 Samsung Electronics Co., Ltd. Structure of a CMOS image sensor and method for fabricating the same
US20060113898A1 (en) * 2004-11-29 2006-06-01 Seiko Epson Corporation Transparent substrate, electro-optical device, image forming device and method for manufacturing electro-optical device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3215877A4 (fr) * 2014-11-05 2018-06-27 Fastlight Techonologies Ltd. Infrastructures de réseau à base électro-optique pour des systèmes de télécommunication
US10302882B2 (en) 2014-11-05 2019-05-28 Fastlight Technologies Ltd. Electro-optically based network infrastructures for telecommunication systems
CN105547485A (zh) * 2015-12-04 2016-05-04 哈尔滨工业大学 基于微透镜阵列与调制激光的火焰温度泛尺度光场探测方法
CN105571741A (zh) * 2015-12-04 2016-05-11 哈尔滨工业大学 基于微透镜阵列与连续激光的火焰温度泛尺度光场探测方法
CN105571741B (zh) * 2015-12-04 2018-06-12 哈尔滨工业大学 基于微透镜阵列与连续激光的火焰温度泛尺度光场探测方法

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