WO2009120302A3 - Chemical treatments to enhance photovoltaic performance of cigs - Google Patents

Chemical treatments to enhance photovoltaic performance of cigs Download PDF

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Publication number
WO2009120302A3
WO2009120302A3 PCT/US2009/001815 US2009001815W WO2009120302A3 WO 2009120302 A3 WO2009120302 A3 WO 2009120302A3 US 2009001815 W US2009001815 W US 2009001815W WO 2009120302 A3 WO2009120302 A3 WO 2009120302A3
Authority
WO
WIPO (PCT)
Prior art keywords
cigs
chemical treatments
photovoltaic performance
enhance photovoltaic
enhance
Prior art date
Application number
PCT/US2009/001815
Other languages
French (fr)
Other versions
WO2009120302A2 (en
Inventor
Masud Akhtar
Alan E. Delahoy
Original Assignee
Epv Solar, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epv Solar, Inc. filed Critical Epv Solar, Inc.
Publication of WO2009120302A2 publication Critical patent/WO2009120302A2/en
Publication of WO2009120302A3 publication Critical patent/WO2009120302A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Abstract

The present invention provides method of treating semiconductor surfaces (e.g., CIGS) using various solvents (including ionic solvents and eutectics), and methods preparing photovoltaic cells comprising treated CIGS materials.
PCT/US2009/001815 2008-03-24 2009-03-24 Chemical treatments to enhance photovoltaic performance of cigs WO2009120302A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US755008P 2008-03-24 2008-03-24
US5379308A 2008-03-24 2008-03-24
US12/053,793 2008-03-24
US61/007,550 2008-03-24

Publications (2)

Publication Number Publication Date
WO2009120302A2 WO2009120302A2 (en) 2009-10-01
WO2009120302A3 true WO2009120302A3 (en) 2009-12-30

Family

ID=41114514

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/001815 WO2009120302A2 (en) 2008-03-24 2009-03-24 Chemical treatments to enhance photovoltaic performance of cigs

Country Status (1)

Country Link
WO (1) WO2009120302A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107623046B (en) * 2017-08-25 2020-06-30 中国科学院上海微系统与信息技术研究所 Post-processing method of copper-indium-gallium-selenium absorption layer and solar cell preparation method based on post-processing method
CN109817735B (en) * 2019-01-17 2020-08-04 南京邮电大学 Solution method for preparing high-efficiency copper indium selenide and copper indium gallium selenide thin-film solar cell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107562A (en) * 1998-03-24 2000-08-22 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method for manufacturing the same, and solar cell using the same
US6307148B1 (en) * 1999-03-29 2001-10-23 Shinko Electric Industries Co., Ltd. Compound semiconductor solar cell and production method thereof
US6537845B1 (en) * 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
WO2007147222A2 (en) * 2006-06-21 2007-12-27 Katholieke Universiteit Leuven Novel ionic liquids

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107562A (en) * 1998-03-24 2000-08-22 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method for manufacturing the same, and solar cell using the same
US6307148B1 (en) * 1999-03-29 2001-10-23 Shinko Electric Industries Co., Ltd. Compound semiconductor solar cell and production method thereof
US6537845B1 (en) * 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
WO2007147222A2 (en) * 2006-06-21 2007-12-27 Katholieke Universiteit Leuven Novel ionic liquids

Also Published As

Publication number Publication date
WO2009120302A2 (en) 2009-10-01

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