WO2009111669A3 - Techniques de dopage sans masque pour cellules solaires - Google Patents

Techniques de dopage sans masque pour cellules solaires Download PDF

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Publication number
WO2009111669A3
WO2009111669A3 PCT/US2009/036239 US2009036239W WO2009111669A3 WO 2009111669 A3 WO2009111669 A3 WO 2009111669A3 US 2009036239 W US2009036239 W US 2009036239W WO 2009111669 A3 WO2009111669 A3 WO 2009111669A3
Authority
WO
WIPO (PCT)
Prior art keywords
create
contact regions
solar cells
maskless
ion implantation
Prior art date
Application number
PCT/US2009/036239
Other languages
English (en)
Other versions
WO2009111669A2 (fr
Inventor
Atul Gupta
Nicholas P.T. Bateman
Paul J. Murphy
Anthony Renau
Charles Carlson
Original Assignee
Varian Semiconductor Equipment Associates
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/200,117 external-priority patent/US20090317937A1/en
Application filed by Varian Semiconductor Equipment Associates filed Critical Varian Semiconductor Equipment Associates
Publication of WO2009111669A2 publication Critical patent/WO2009111669A2/fr
Publication of WO2009111669A3 publication Critical patent/WO2009111669A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un procédé amélioré et à moindre coût permettant de produire des cellules solaires à l’aide de la technologie de l’émetteur sélectif. Les régions de contact sont créées sur le substrat sans utilisation de la lithographie ou d’un masque. Le procédé utilise la technologie de l’implantation ionique, et des conditions de précision relativement faible des régions de contact pour réduire les étapes de procédé nécessaires pour produire une cellule solaire. Dans certains modes de réalisation, le courant du faisceau d’ions est sélectivement modifié pour créer les régions de contact fortement dopées. Dans d’autres modes de réalisation, le faisceau d’ions est concentré, soit par l’utilisation d’une ouverture, soit par le biais de réglages des composants de la ligne de faisceau pour créer le profil de dopage nécessaire. Dans d’autres modes de réalisation encore, le taux de balayage de la tranche est modifié pour créer le motif d’implantation ionique souhaité.
PCT/US2009/036239 2008-03-05 2009-03-05 Techniques de dopage sans masque pour cellules solaires WO2009111669A2 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US3387308P 2008-03-05 2008-03-05
US61/033,873 2008-03-05
US7427808P 2008-06-20 2008-06-20
US61/074,278 2008-06-20
US12/200,117 US20090317937A1 (en) 2008-06-20 2008-08-28 Maskless Doping Technique for Solar Cells
US12/200,117 2008-08-28

Publications (2)

Publication Number Publication Date
WO2009111669A2 WO2009111669A2 (fr) 2009-09-11
WO2009111669A3 true WO2009111669A3 (fr) 2009-12-17

Family

ID=41056657

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/036239 WO2009111669A2 (fr) 2008-03-05 2009-03-05 Techniques de dopage sans masque pour cellules solaires

Country Status (1)

Country Link
WO (1) WO2009111669A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697553B2 (en) 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
US8697552B2 (en) 2009-06-23 2014-04-15 Intevac, Inc. Method for ion implant using grid assembly
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013219599A1 (de) * 2013-09-27 2015-04-16 International Solar Energy Research Center Konstanz E.V. Verfahren zum Herstellen einer Kontaktstruktur einer Fotovoltaikzelle und Fotovoltaikzelle

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62134978A (ja) * 1985-12-09 1987-06-18 Fujitsu Ltd 相補型高速半導体装置の製造方法
JP2000106436A (ja) * 1998-07-28 2000-04-11 Matsushita Electronics Industry Corp 半導体装置の製造方法
WO2004012219A1 (fr) * 2002-07-29 2004-02-05 Axcelis Technologies, Inc. Structure support pour piece a travailler a angle d'implantation reglable destine a un implanteur ionique

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62134978A (ja) * 1985-12-09 1987-06-18 Fujitsu Ltd 相補型高速半導体装置の製造方法
JP2000106436A (ja) * 1998-07-28 2000-04-11 Matsushita Electronics Industry Corp 半導体装置の製造方法
WO2004012219A1 (fr) * 2002-07-29 2004-02-05 Axcelis Technologies, Inc. Structure support pour piece a travailler a angle d'implantation reglable destine a un implanteur ionique

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697553B2 (en) 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
US8871619B2 (en) 2008-06-11 2014-10-28 Intevac, Inc. Application specific implant system and method for use in solar cell fabrications
US8697552B2 (en) 2009-06-23 2014-04-15 Intevac, Inc. Method for ion implant using grid assembly
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US8997688B2 (en) 2009-06-23 2015-04-07 Intevac, Inc. Ion implant system having grid assembly
US9303314B2 (en) 2009-06-23 2016-04-05 Intevac, Inc. Ion implant system having grid assembly
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
US9583661B2 (en) 2012-12-19 2017-02-28 Intevac, Inc. Grid for plasma ion implant

Also Published As

Publication number Publication date
WO2009111669A2 (fr) 2009-09-11

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