WO2009110339A1

WO2009110339A1 - Device package, electronic module, and electronic apparatus

Info

Publication number: WO2009110339A1
Application number: PCT/JP2009/053165
Authority: WO
Inventors: 真司渡邉
Original assignee: 日本電気株式会社
Priority date: 2008-03-03
Filing date: 2009-02-23
Publication date: 2009-09-11
Also published as: JPWO2009110339A1

Abstract

Disclosed is a device package having a decompressed hollow structure wherein structural members can be bonded even with low weighting and productivity and reliability of airtight sealing are enhanced. A device package having a device element disposed in the hollow structure of a package formed by bonding a base, a cap and a spacer is provided with a bonding material pattern having a first bonding material arranged to include the region of outer circumferential edge of the bonding regions between the base and the spacer and between the cap and the spacer, and a second bonding material arranged to include the region of inner circumferential edge of the bonding regions between the base and the spacer and between the cap and the spacer. Interior of the hollow structure is decompressed. A cavity is formed in the region between the first and second bonding materials.

Description

Device package, electronic module, and electronic device

[Description of related applications]
The present invention is based on the priority claim of Japanese patent application: Japanese Patent Application No. 2008-052164 (filed on Mar. 3, 2008), the entire contents of which are incorporated herein by reference. Shall.
The present invention relates to a device package having a hollow structure, and more particularly, to a device package in which the inside of the hollow structure is decompressed and hermetically sealed, an electronic module using the device package, and an electronic apparatus.

In recent years, the number of types of devices that require hermetic sealing has increased significantly, and their functions have been diversified. For example, conventional devices include a crystal resonator, a crystal filter, and a light emitting / receiving element, and these are mainly small devices of about 1 to 5 mm square. On the other hand, in recent years, devices having fine moving parts using micromachine technology have been developed, and elements such as mirror array devices for projectors and infrared detection element array devices for infrared cameras are arranged in an array. What is being developed has also been developed, and large devices whose package size exceeds 10 mm square are beginning to appear.

As a device package in which such a device is hermetically sealed inside a hollow structure, in Patent Document 1, a ceramic base 110, a metallized layer 111 formed around the main surface of the ceramic base 110, and a metallized layer 111 are disclosed. The electronic component package 101 includes a plating layer 112 formed on the upper surface of the metal layer 102 and a metal lid 102 bonded to the plating layer 112 by an electron beam or a laser beam. The metallized layer 111 has a flatness of 5 μm or less. Is disclosed (conventional example 1; see FIG. 15). According to this, since the flatness of the metallized layer 111 is 5 μm or less, the flatness of the surface of the plating layer 112 formed thereon is also good, and an electron beam or a laser beam with the metal lid 102 is used. It is said that the airtight yield of the joint is improved and the reliability of the joint is also improved.

In Patent Document 2, a semiconductor substrate 202 and a cap substrate 204 arranged at a distance 203 from the surface 202 a of the semiconductor substrate 202 are provided, and the semiconductor of the cap substrate 204 is interposed between the semiconductor substrate 202 and the cap substrate 204. There is disclosed a semiconductor package 201 provided with a spacer 205 protruding from a surface 204a facing the substrate 202, and an adhesive layer 206 for bonding and fixing the spacer 205 and the semiconductor substrate 202 (conventional example 2; FIG. 16). According to this, it is assumed that the semiconductor package 201 can be manufactured in which the distance 203 between the semiconductor substrate 202 and the cap substrate 204 is kept uniform and the distance 203 between the semiconductor substrate 202 and the cap substrate 204 is freely controlled.

By the way, a device having a fine operation part using micromachine technology has an influence that the operation part is influenced by air, for example, air resistance, heat conduction to air, etc., cannot be ignored in securing the characteristics of the device. Yes. Therefore, in order to reduce the influence of air in the working part, a highly airtight package having a high degree of vacuum by reducing the pressure inside the hollow structure has been strongly demanded.

Japanese Patent No. 3374395 (FIG. 1) JP 2006-147864 A (FIG. 1)

The entire disclosures of

Patent Documents

1 and 2 are incorporated herein by reference. The following analysis is given by the present invention.
However, if the inside of the hollow structure is kept at a high degree of vacuum, atmospheric pressure is applied to the structural members of the package, and a large stress is generated at the joint between the structural members. In addition, an increase in the size of the package helps increase this stress. For this reason, it is essential to select a structure and material that can withstand this stress. However, in the configuration using the adhesive for bonding the spacer and the semiconductor substrate as in the conventional example 2 (see FIG. 16), the adhesive strength of the adhesive is insufficient if the inside of the hollow structure is a large vacuum package. However, there is a possibility that the bonding strength that can withstand the stress generated by the atmospheric pressure cannot be secured.

Further, in the configuration of Conventional Example 1 (see FIG. 15), when a device processed by micromachine technology is used as an electronic element component, the metal lid and the plating layer are bonded by a local heating means such as a laser beam or an electron beam. Then, since heat escapes to the entire device area, there is a possibility that such a local heating means cannot be used. That is, most devices processed by micromachine technology are formed on a silicon wafer, and the thermal conductivity of the silicon wafer is about 160 W / m · K. This is about 10 times that of a metal or ceramic material such as SUS, and local heating means using a laser beam or an electron beam causes heat to escape to the entire silicon wafer. There is a possibility that a local heating means such as a laser beam or an electron beam cannot be used.

Furthermore, in a package in which the inside of the hollow structure is depressurized, if a crack occurs at the joint between structural members, there is a leak path from the outer periphery of the package to the inside of the hollow structure even if it is a microcrack. There is a risk that device characteristics cannot be secured. In particular, the larger the package, the more the stress on the joint increases, and a leak path becomes easier. In order to suppress the occurrence of such a leak path, if the number of joints is increased in the package outer peripheral direction, the package size becomes large and the weight for joining must be further increased, which is a factor that further lowers productivity. Become.

The main object of the present invention is to improve the productivity and the hermetic sealing reliability in the device package in which the inside of the hollow structure is decompressed, the structural members can be joined even with a relatively low load.

In one aspect of the present invention, a device package in which a device element is arranged inside a hollow structure of a package formed by bonding a plurality of members, and an outer peripheral edge portion of a bonding region between the plurality of members And a first bonding material for joining the plurality of members, and a region of the inner peripheral edge of the joining region between the plurality of members, A bonding material pattern having a second bonding material for bonding the plurality of members, and the inside of the hollow structure is depressurized, in a region between the first bonding material and the second bonding material. It is characterized by having a void.

According to the present invention, since the bonding area can be reduced while maintaining the bonding strength of the bonding portion of the package, the bonding load at the time of manufacturing can be reduced, and even a large-sized depressurized airtight package can be produced. A highly airtight structure can be realized. In addition, by providing a space in the region between the first bonding material and the second bonding material, it is possible to prevent the progress of cracks in this space and realize a hermetic structure with high hermetic sealing reliability in which a leak path is unlikely to occur. can do.

1A is a cross-sectional view schematically showing a configuration of a device package according to a first embodiment of the present invention, and FIG. It is sectional drawing which showed typically the structure before the assembly of the device package which concerns on Example 1 of this invention. It is a figure for demonstrating the stress which generate | occur | produces in the junction part of the device package which concerns on a comparative example. It is the graph which showed typically the stress distribution added to the joining material of the device package concerning a comparative example. FIG. 4A is a cross-sectional view schematically showing a configuration of a device package according to a second embodiment of the present invention, and FIG. 4B is a cross-sectional view taken along line XX ′. FIG. 6A is a cross-sectional view schematically showing a configuration of a device package according to Example 3 of the present invention, and FIG. 6B is a cross-sectional view taken along the line XX ′. It is sectional drawing which showed typically the pattern of the joining material of the device package which concerns on Example 4 of this invention. It is the expanded sectional view of the area | region C which showed typically the joining material of the device package which concerns on Example 4 of this invention. It is sectional drawing which showed typically the pattern of the joining material of the device package which concerns on Example 5 of this invention. It is sectional drawing before the assembly which showed typically the structure of the device package which concerns on Example 6 of this invention, (A) It is sectional drawing after an assembly. It is sectional drawing which showed typically the structure of the base before the assembly of the device package which concerns on Example 7 of this invention. It is the expanded sectional view of the area | region D which showed typically the structure of the base before the assembly of the device package which concerns on Example 7 of this invention, (A) is 1st example (B) 2nd example. It is sectional drawing which showed typically the pattern of the joining material of the device package which concerns on Example 8 of this invention, and a filling material. It is sectional drawing which showed typically the structure of the device package which concerns on Example 9 of this invention. It is sectional drawing which showed typically the structure of the device package (electronic component package) which concerns on the prior art example 1. FIG. It is sectional drawing which showed typically the structure of the device package (semiconductor package) concerning the prior art example 2. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Base 1a Device element 2 Cap 3

Spacer

4, 4a, 4b, 4c, 4d, 4e Bonding material (bonding material pattern)
5, 5a Barrier layer 6 Filling material 7 Crack 12 Cap 12a Recessed portion 101 Ceramic package 102 Metal lid 103 Electronic component element 110 Ceramic substrate 111 Metallized layer 112

Plating layer

114, 115

Electrode pad

116, 117 Lead electrode 201 Semiconductor package 202 Semiconductor substrate 202a Semiconductor substrate surface 202b Semiconductor substrate back surface 203 Distance 204 Cap substrate 204a Cap substrate surface facing the semiconductor substrate 205 Spacer 206 Adhesive layer 207 Functional element

In Embodiment 1 of the present invention, a device element (1a in FIG. 1) is arranged inside a hollow structure of a package formed by joining a plurality of members (base 1, cap 2, spacer 3 in FIG. 1). The device package is disposed so as to include an outer peripheral edge region of a bonding region between the plurality of members (between the base 1 and the spacer 3 and between the cap 2 and the spacer 3 in FIG. 1). A first bonding material (4a in FIG. 1) for bonding between the plurality of members (between the base 1 and the spacer 3 in FIG. 1, between the cap 2 and the spacer 3), and between the plurality of members (in FIG. 1). Between the plurality of members (between the base 1 and the spacer 3 in FIG. 1), the inner peripheral edge region of the joining region between the base 1 and the spacer 3 and between the cap 2 and the spacer 3 is included. Between cap 2 and spacer 3 A second bonding material (4b in FIG. 1), and the inside of the hollow structure is depressurized, and the first bonding material (4a in FIG. 1) and the above There is a void in the region between the second bonding materials (4b in FIG. 1) (form 1).
Furthermore, the following forms are also possible.
Of the bonding regions between the plurality of members, the region between the first bonding material and the second bonding material is arranged by the first bonding material and the second bonding material among the bonding regions between the plurality of members. It is preferable that the stress is smaller than the stress applied to the provided region (Mode 1-1).
The first bonding material and the second bonding material are preferably metal materials (Mode 1-2).
The bonding material pattern is disposed at a predetermined interval from each of the first bonding material and the second bonding material in a part of a space in a region between the first bonding material and the second bonding material. And having one or a plurality of third bonding materials for bonding the plurality of members, between the first bonding material and the third bonding material, and between the second bonding material and the third bonding material. It is preferable to have a void in each of the regions (Form 1-3).
The bonding material pattern is disposed in a part of a space in a region between the first bonding material and the third bonding material and connected to each of the first bonding material and the third bonding material. It is preferable to have a plurality of fourth bonding materials for bonding the plurality of members, and to have a void in a region surrounded by the first bonding material, the third bonding material, and the fourth bonding material ( Form 1-4).
It is preferable that the shape of the corner of the void in the region surrounded by the first bonding material, the third bonding material, and the fourth bonding material is formed in an arc shape (Embodiment 1-5).
The bonding material pattern is disposed in a part of a space in a region between the second bonding material and the third bonding material and connected to each of the second bonding material and the third bonding material. Preferably, the plurality of fifth bonding materials for bonding the plurality of members are provided, and a space is provided in a region surrounded by the second bonding material, the third bonding material, and the fifth bonding material ( Form 1-6).
The shape of the corner of the void in the region surrounded by the second bonding material, the third bonding material, and the fifth bonding material is preferably formed in an arc shape (Embodiment 1-7).
It is preferable that the fourth bonding material and the fifth bonding material are arranged so that at least one of the fourth bonding material and the fifth bonding material does not exist on the radiation from the center of the package. (Form 1-8).
The bonding material pattern is disposed in a part of a space in a region between the plurality of third bonding materials, and is connected to each of the third bonding materials, and a plurality of bonding members bonding the plurality of members. It is preferable to have a void in a region surrounded by the third bonding material and the sixth bonding material (Mode 1-9).
The shape of the corner of the void in the region surrounded by the third bonding material and the sixth bonding material is preferably formed in an arc shape (Embodiment 1-10).
In the fourth bonding material, the fifth bonding material, and the sixth bonding material, at least one of the fourth bonding material and the fifth bonding material does not exist on the radiation from the central portion of the package. It is preferable to be disposed (Mode 1-11).
It is preferable that one member of the plurality of members is provided with a bonding material in the entire region of the bonding region between the plurality of members (Mode 1-12).
It is preferable that at least a barrier layer interposed between the plurality of members and the bonding material pattern is provided (Mode 1-13).
It is preferable that a filling material made of a material having a lower elastic modulus than that of the bonding material is provided in the space in the bonding region between the plurality of members (Mode 1-14).
The filling material is preferably made of any one of a metal material, a resin material, and a liquid (Form 1-15).
The plurality of members are disposed on a base on which a device element is formed or mounted, a frame-shaped spacer disposed on an outer periphery of the device element of the base, and an opposite side of the spacer to the base side. And a cap that covers a space on the inner peripheral side of the spacer, and the first bonding material is formed between the base and the spacer, and the outer peripheral edge of each bonding region between the spacer and the cap. The second bonding material is disposed so as to include a region of an inner peripheral edge of each bonding region between the base and the spacer and between the spacer and the cap. It is preferable (Form 1-16).
The plurality of members include a base on which a device element is formed or mounted, and a cap in which a recess is formed in a region including the device element on a surface on the base side, and the first bonding material includes the base And the second bonding material is disposed so as to include a region of an inner peripheral edge of a bonding region between the base and the cap. It is preferable to be provided (Mode 1-17).
Embodiment 2 of the present invention is characterized in that an electronic module includes the device package (Mode 2).
Embodiment 3 of the present invention is characterized in that an electronic device includes the device package or the electronic module (Mode 3).

The device package according to the first embodiment of the present invention will be described with reference to the drawings. FIG. 1A is a cross-sectional view schematically showing a configuration of a device package according to Embodiment 1 of the present invention, and FIG. 1B is a cross-sectional view taken along a line XX ′. FIG. 2 is a cross-sectional view schematically showing a configuration of the device package according to the first embodiment of the present invention before assembly.

The device package is a device package having a hollow structure, and the inside of the hollow structure is decompressed and hermetically sealed. In the device package, a device element 1a is arranged inside a hollow structure. The device package is mounted on an electronic module or electronic device. The device package includes a base 1, a device element 1a, a cap 2, a spacer 3, and

bonding materials

4a and 4b.

The base 1 is a substrate in which the device element 1a is formed in the inner region of the hollow structure. The base 1 is bonded to the spacer 3 via

bonding materials

4a and 4b at the peripheral edge (region on the outer periphery of the region where the device element 1a is formed). FIG. 1 shows an example in which the device element 1a is formed directly on the silicon, but the present invention is not limited to this. The device chip is fixed on the base 1 with a fixing material such as a die bonding material. It may be a configuration implemented via In this case, for example, glass, ceramic or the like can be used as the material of the base 1. Therefore, the material of the base 1 is not limited to silicon, and a wide range of materials can be used.

The device element 1 a is an element formed on the inner side of the hollow structure of the base 1. The device element 1a can be, for example, a sensing device formed on a silicon wafer by silicon microfabrication technology, which is one of micromachine technologies, and fine operating parts can be arranged in a matrix. The internal environment of the hollow structure required differs depending on the content of the sensing function of the device element 1a, but in general, the air resistance of gas including air and the heat conduction to the gas may affect the device characteristics. These device elements 1a are required to have a high degree of vacuum due to reduced pressure. The device element 1a may be a device chip and may be mounted on the base 1 via a fixing material such as a die bonding material.

The cap 2 is a lid having a hollow structure. The cap 2 is joined to the spacer 3 via the joining

materials

4a and 4b at the periphery.

The spacer 3 is a frame-like member disposed between the base 1 and the cap 2. The spacer 3 is bonded to the base 1 via

bonding materials

4a and 4b on the surface on the base 1 side. The spacer 3 is bonded to the cap 2 via

bonding materials

4a and 4b on the surface on the cap 2 side.

In addition, although the material of the cap 2 and the spacer 3 is not ask | required, in order to minimize the stress added to a junction part, it is preferable that each thermal expansion coefficient is near, More preferably, by using the same material for all of these. is there. For the cap 2 and the spacer 3, for example, resin, glass, metal or the like can be used.

The

bonding materials

4a and 4b are materials for bonding between the base 1 and the spacer 3 and between the cap 2 and the spacer 3. The bonding material 4a is a bonding material arranged so as to include the region of the outer peripheral edge of the spacer 3, and is arranged in a frame shape. The bonding material 4b is a bonding material arranged so as to include a region of the inner peripheral edge portion of the spacer 3, and is arranged in a frame shape with a predetermined interval from the bonding material 4a on the inner peripheral side of the bonding material 4a. ing. There is a space between the bonding material 4a and the bonding material 4b. As the

bonding materials

4a and 4b, for example, Au formed by plating or vapor deposition can be used. Note that Au—Au bonding is generally known as a material that can be thermocompression bonded at a relatively low temperature and low pressure, and since it is a proven bonding material, it is used as the

bonding material

4a, 4b. It is not limited to Au.

The device package according to Example 1 can be manufactured by combining the components configured as shown in FIG. 2 and performing heating and pressurization in a vacuum chamber. Thereby, an airtight sealed package in which the inside of the hollow structure is decompressed can be obtained. Note that the space between the

bonding materials

4a and 4b is also a reduced-pressure atmosphere as in the hollow structure.

Next, the stress generated in the joint portion of the device package according to the first embodiment of the present invention will be described with reference to a comparative example and drawings. FIG. 3 is a diagram for explaining the stress generated in the joint portion of the device package according to the comparative example. FIG. 4 is a graph schematically showing the stress distribution applied to the bonding material of the device package according to the comparative example.

In the device package according to the comparative example (see FIG. 3), the bonding material 4 is provided between the base 1 and the spacer 3 and between the cap 2 and the spacer 3. (See FIG. 1). The inside of the hollow structure of the device package according to the comparative example is kept at a high degree of vacuum. At this time, the outside of the package is at atmospheric pressure, and atmospheric pressure is applied to the entire outer surface of the package. Since the cap 2 and the base 1 are supported by the spacer 3 at the peripheral portion, a force is generated in the cap 2 and the base 1 in a direction in which the space inside the hollow structure is narrowed. Then, as shown in FIG. 3A, a moment force that is a compressive stress in the direction of the arrow is applied to the portion on the inner end side of the joint portion of the joint material 4, and a portion in the direction of the arrow is present on the outer end side of the joint portion of the joint material 4. A moment force that becomes a tensile stress is applied. Therefore, in the configuration in which the bonding material 4 is provided between the base 1 and the spacer 3 and between the cap 2 and the spacer 3 as in the device package according to the comparative example, the strength of the bonding material 4 is affected by these stresses. If it cannot be withstood, the bonding material 4 breaks, a leak path is formed from the outer end of the bonding portion to the inner end of the bonding portion, air leaks into the hollow structure, and device characteristics cannot be secured. A malfunction occurs. That is, as in the comparative example (see FIG. 3A), when the joint portion is constituted by one round, a crack is likely to occur at a location where the tensile stress on the outer circumference of the spacer 3 is maximized. Once a crack occurs, even if it is a micro crack that is not broken, the crack is likely to progress and grow from the outer edge of the bonding material 4 to the inner edge of the bonding portion, leading to a leak path. If the bonding material 4 is present between the base 1 and the spacer 3 and between the cap 2 and the spacer 3, it is impossible to prevent the crack from proceeding.

Here, the stress distribution applied to the bonding material 4 of the device package according to the comparative example is as shown in FIG. The horizontal axis shows the position when the outer end of the bonding material 4 is zero and the bonding width of the inner end of the bonding material 4 (the end on the inner side of the hollow structure) is 1 mm. The vertical axis shows the stress when the maximum stress is 1 for the tensile stress and −1 for the compressive stress as the stress index. In FIG. 4, thermal stress is not considered. From the graph of FIG. 4, the stress is concentrated near the end of the joint (in the range of 0 to 0.2 mm, 0.8 to 1 mm), and in the range of 0.2 to 0.8 mm, the stress sharply decreases. It can be seen that almost no stress is applied.

Therefore, considering the graph of FIG. 4, if the bonding material 4a is in the range of 0 to 0.2 mm and the bonding material 4b is in the range of 0.8 to 1 mm, it can be said that the bonding strength is sufficient. Therefore, in Example 1 (refer FIG. 1), it is set as the structure which has arrange | positioned joining

material

4a, 4b only to the area | region where a compressive stress and a tensile stress are added largely. That is, in Example 1, in order to maintain the bonding strength of the comparative example (see FIG. 3), it is not necessary to make the total bonding width 1 mm as in the comparative example, and it is possible to reduce the total to 0.4 mm. . The joining area reduction rate of Example 1 is about 2/5 of the joining area of the comparative example, and the joining weight can be reduced at the same rate.

In addition, when the

bonding materials

4a and 4b protrude from the spacer 3 to the outer peripheral side and the inner peripheral side, the protruding portion does not contribute to the weight during the bonding, and therefore, the arrangement of the protruding portion does not matter. For example, when the base 1 is larger than the outer periphery of the spacer 3, the bonding material 4 a on the base 1 may be larger than the range of the spacer 3. This corresponds to the arrangement in the vicinity of both end portions of the bonding material 4 shown in FIG.

According to the first embodiment, the bonding area can be reduced while maintaining the bonding strength of the bonding portion of the package, and the bonding load at the time of manufacturing can be reduced.

Further, according to the first embodiment, cracks are generated in one of the

bonding materials

4a and 4b by arranging the

bonding material

4a and 4b separately in the outer peripheral region and the inner peripheral region of the spacer 3, respectively. Even if a leak path is formed, since the crack does not advance in the other of the

bonding materials

4a and 4b, the leak can be prevented. Therefore, an airtight package with higher airtight sealing reliability can be provided.

Here, the purpose of reducing the bonding area when reducing the bonding area and manufacturing will be described.

In Conventional Example 1 (see FIG. 15), a local heating means using a laser beam or an electron beam is used as a means for joining the metal lid and the plating layer. When used, the fact that heat escapes to the entire device has been described in [Problems to be Solved by the Invention]. In order to solve such problems, a metal material is used as a bonding material, and metal bonding is performed by applying pressure while heating the entire surface of at least one of a wafer, an individual base substrate, and a cap component. “Thermocompression bonding method” is regarded as promising, and the practical application of a package size of about 5 mm square or less is under consideration.

However, in a large package whose package size exceeds 10 mm square, in order to obtain a bonding strength that can withstand the magnitude of stress generated by atmospheric pressure, the bonding width needs to be a corresponding width. Along with the increase in area, the problem is that a large amount of pressure is required.

As a specific example, Au—Au thermocompression bonding is generally used as a bonding material that can be bonded at a relatively low pressure and low temperature and has high bonding reliability, but at a heating temperature of 200 to 300 ° C. The load required for joining is about 300 MPa. For example, if the package size is 17mm square and the bonding material is Au-Au, the bonding width that can withstand atmospheric pressure is calculated by simulation with a safety factor of twice, and a bonding width of about 1mm is required around the package. In this case, the pressurizing force required for joining is about 1.9 t. Note that the material properties used in this simulation are that of the base 1, the cap 2 and the spacer 3 all of which are silicon properties. When bonding wafers having such a multi-sided package, a pressure of several tens of t is required, and it is very difficult to realize a device that can be mounted in a vacuum atmosphere with high accuracy. Even if possible, it is easily assumed that the equipment will be large and expensive.

Therefore, it is necessary to reduce the bonding area in order to reduce the load, but when the bonding width is narrowed, the above-mentioned moment becomes larger than the reduced area due to the narrowing of the width, and the bonding strength is remarkably increased. descend. Therefore, when the thermocompression bonding method is applied to a large package, it can be said that how to reduce the bonding area while maintaining the bonding strength is a big problem. In that respect, in Example 1, the bonding area can be reduced while maintaining the bonding strength of the bonding portion of the large package, and it has succeeded in reducing the bonding weight at the time of manufacturing.

A device package according to the second embodiment of the present invention will be described with reference to the drawings. FIG. 5 is a cross-sectional view schematically showing the configuration of the device package according to the second embodiment of the present invention, (A) and (B) XX ′.

In Example 2, the bonding material 4c separated from the

bonding materials

4a and 4b is disposed in the space between the bonding material 4a and the bonding material 4b in order to further improve the reliability of the hermetic sealing. Other configurations are the same as those of the first embodiment.

The bonding material 4 c is a material for bonding between the base 1 and the spacer 3 and between the cap 2 and the spacer 3. The bonding material 4c is a bonding material disposed in a part of a region between the bonding material 4a and the bonding material 4b, and is disposed in a frame shape with a predetermined interval from each of the bonding material 4a and the bonding material 4b. Yes. There are voids between the bonding material 4c and the bonding material 4a and between the bonding material 4c and the bonding material 4b. As the bonding material 4c, the same material as the

bonding materials

4a and 4b can be used.

According to the second embodiment, the risk of leakage path can be drastically reduced by increasing the number of divisions of the

bonding materials

4a, 4b, and 4c. In addition, the risk of cracking is reduced by placing the bonding material 4c in a region where stress is hardly generated (corresponding to 0.4 to 0.6 mm in FIG. 3), and the hermetic sealing reliability is greatly improved. be able to.

A device package according to the third embodiment of the present invention will be described with reference to the drawings. FIG. 6A is a cross-sectional view schematically showing the configuration of a device package according to Example 3 of the present invention, and FIG. 6B is a cross-sectional view between XX ′.

In Example 3, the cap 12 in which the cap (2 in FIG. 5) and the spacer (3 in FIG. 5) of Example 2 are integrated is used, and the cap (2 in FIG. 5) and the spacer (2 in FIG. 5) are used. The

bonding materials

4a, 4b, and 4c between 3) are omitted. Other configurations are the same as those of the second embodiment.

The cap 12 is a hollow structure lid. The cap 12 has a recess 12a formed on the surface on the base 1 side in a region including the device element 1a. The cap 12 is bonded to the base 1 via

bonding materials

4a, 4b, and 4c on the surface of the protruding portion on the outer periphery of the recess 12a.

According to the third embodiment, the risk of leakage can be reduced by reducing the number of joints where a leak path may occur within the allowable range of part workability and price.

FIG. 6 shows an example in which the cap (2 in FIG. 5) and the spacer (3 in FIG. 5) of Example 2 are integrated, but in addition to this, the base (1 in FIG. 5) and the spacer (FIG. 5) are shown. 5-3) may be integrated. Also in this case, the number of joints is reduced, and the risk of leakage can be reduced.

A device package according to Example 4 of the present invention will be described with reference to the drawings. FIG. 7 is a cross-sectional view schematically showing a pattern of a bonding material of a device package according to Example 4 of the present invention. FIG. 8 is an enlarged cross-sectional view of a region C schematically showing the bonding material of the device package according to Example 4 of the present invention. FIG. 7 is a cross-sectional view corresponding to FIGS. 5B and 6B.

In the fourth embodiment, the bonding material 4a and the bonding material are formed in a part of the region between the bonding material 4a and the bonding material 4c in the second embodiment (see FIG. 5B) and the third embodiment (see FIG. 6B). A plurality of bonding materials 4d for connecting 4c are provided, and a plurality of bonding materials 4e for connecting the bonding material 4b and the bonding material 4c are provided in a part of a region between the bonding material 4b and the bonding material 4c. Other configurations are the same as those in the second and third embodiments.

The bonding material 4d is a bonding material disposed in a part of a region between the bonding material 4a and the bonding material 4c. The bonding material 4d partitions a space between the bonding material 4a and the bonding material 4c into a plurality. As the bonding material 4d, a material similar to the

bonding materials

4a, 4b, and 4c can be used.

The bonding material 4e is a bonding material disposed in a part of a region between the bonding material 4b and the bonding material 4c. The bonding material 4e partitions a space between the bonding material 4b and the bonding material 4c into a plurality. The bonding material 4e can be the same material as the

bonding materials

4a, 4b, and 4c.

As for the positions of the bonding material 4e and the bonding material 4d, both the bonding material 4e and the bonding material 4d do not exist on the radiation L from the central portion (stress generation center) of the package, that is, on the route where the crack advances due to the stress. Is provided. In this way, for example, even if the crack 7 progresses from the outer end side of the joint as shown in FIG. 8, only the crack 7 is generated in the

joint materials

4a, 4d, and 4c. Cracks can be prevented from occurring.

According to Example 4, the number of vacant spaces in the region where the

bonding materials

4a, 4b, 4c, 4d, and 4e are arranged increases, and a dramatic reduction in leakage risk can be expected. Further, by preventing the bonding material 4e and the bonding material 4d from being present on the radiation L from the central portion of the package, it is possible to prevent the occurrence of cracks from the outer end side of the bonding portion to the inner end side of the bonding portion. Can do.

A device package according to Embodiment 5 of the present invention will be described with reference to the drawings. FIG. 9 is a cross-sectional view schematically showing a pattern of a bonding material of a device package according to Example 5 of the present invention.

In Example 5, the shape of the space surrounded by the

bonding materials

4a, 4d, and 4c of Example 4 (see FIG. 7) and the corners of the space surrounded by the

bonding materials

4b, 4e, and 4c are arcuate. It is what. Other configurations are the same as those in the fourth embodiment.

According to the fifth embodiment, the corners of the voids surrounded by the

bonding materials

4a, 4d, and 4c and the corners of the voids surrounded by the

bonding materials

4b, 4e, and 4c are formed in an arc shape. It is possible to suppress the concentration of stress on the surface.

A device package according to Example 6 of the present invention will be described with reference to the drawings. FIG. 10A is a cross-sectional view before assembly, and FIG. 10B is a cross-sectional view after assembly, schematically showing the configuration of a device package according to Example 6 of the present invention.

In Examples 1 to 5, all of the joining regions of the respective members, that is, both the joining region of the base 1 and the spacer 3 in the joining region of the base 1 and the spacer 3, and the cap 2 and the spacer 3 in the joining region of the cap 2 and the spacer 3 are used. The

bonding materials

4a and 4b having the same shape (including 4c for Examples 2 to 5 and 4d for Examples 4 and 5) are disposed in both of the bonding regions. And the spacer 3 have different joining areas, and the cap 2 and the spacer 3 have different joining areas. Other configurations are the same as those of the first embodiment.

At the stage before the assembly of the device package, for example, as shown in FIG. 10A,

bonding materials

4a, 4b, and 4c similar to those of the second embodiment are disposed in the bonding region of the base 1, and both surfaces of the spacer 3 are disposed. The bonding material 4 is disposed in the entire bonding region, and the

bonding materials

4a, 4b, and 4c similar to those of the second embodiment are disposed in the bonding region of the cap 2, and then, FIG. Assemble like this.

In FIG. 10, the

bonding materials

4 a, 4 b, and 4 c are disposed in the bonding region between the base 1 and the cap 2, and the bonding material 4 is disposed in the entire bonding region on both surfaces of the spacer 3. However, it is set as the structure which has arrange | positioned the joining material 4 to the whole area | region of both the base 1 and the cap 2, or one of the joining area | regions, and arrange |

positions joining material

4a, 4b, 4c to the joining area | region of both surfaces or one side of the spacer 3. It is good also as the structure which carried out. That is, it is only necessary to have a configuration in which the

bonding materials

4a, 4b, and 4c are disposed on one of the two members in the bonding portion. However, in this case, even when the

bonding materials

4a, 4b, and 4c are deformed and crushed by heating and pressurization during bonding, the bonding material 4a, A space is secured by increasing the thickness of 4b and 4c.

According to the sixth embodiment, as shown in FIG. 10 (B), a space for preventing the progress of cracks can be secured in the range of the joint portion, so that the same effect as in the first to fifth embodiments can be expected.

A device package according to Example 7 of the present invention will be described with reference to the drawings. FIG. 11: is sectional drawing which showed typically the structure of the base before the assembly of the device package which concerns on Example 7 of this invention. FIG. 12 is an enlarged cross-sectional view of a region D schematically showing a structure of a base before assembly of a device package according to Example 7 of the present invention, and FIG. 12 (A) is a first example (B) and a second example. is there.

In Example 7, the barrier layer 5 is disposed between the base 1 and the

bonding materials

4a, 4b, and 4c. A device package is assembled as in Example 2 (see FIG. 5) using the base 1 provided with such a barrier layer 5. Other configurations are the same as those of the second embodiment.

In Example 7, Au is used as the

bonding material

4a, 4b, 4c. However, in film formation by plating or vapor deposition, it is common to use a thin film of 1 μm or less in principle and cost. When it is difficult to secure a space for preventing the progress of cracks between the

bonding materials

4a, 4b, and 4c at the bonding portion between the base 1 and the spacer (3 in FIG. 5) with the thickness of only Au, the bonding material By providing the barrier layer 5 as a base for 4a, 4b and 4c, the thickness can be ensured.

The barrier layer 5 is not particularly limited as long as it exists in the lower layer of the

bonding materials

4a, 4b, and 4c, and has a structure formed only under the

bonding materials

4a, 4b, and 4c as shown in FIG. Alternatively, as shown in FIG. 12B, a structure formed in a region including the lower portions of the

bonding materials

4a, 4b, and 4c may be used. For the barrier layer 5, it is preferable to use a material having adhesion between the

bonding materials

4 a, 4 b, 4 c and the base 1. For example, TiN, TaN or the like can be used, and a multilayer structure may be formed by a plurality of materials. .

12 shows a configuration in which the barrier layer 5 is disposed between the base 1 and the

bonding materials

4a, 4b, and 4c. However, the configuration is not limited to this, and the spacer (3 in FIG. 5) and the bonding material ( A barrier layer is disposed between 4a, 4b, and 4c in FIG. 5, and a barrier layer is disposed between the cap (2 in FIG. 5) and the bonding material (4a, 4b, and 4c in FIG. 5). Is also possible.

According to Example 7, while having the same effect as Example 2, it is possible to secure a void between the

bonding materials

4a, 4b, and 4c to prevent the progress of cracks by disposing the barrier layer 5. When it is difficult only with the thickness of the

bonding materials

4a, 4b, and 4c, the thickness between the base 1 and the spacer (3 in FIG. 2) can be secured.

A device package according to Example 8 of the present invention will be described with reference to the drawings. FIG. 13: is sectional drawing which showed typically the pattern of the joining material of the device package which concerns on Example 8 of this invention, and a filling material.

In Examples 1 to 7, a structure in which the material is intentionally not included in the space surrounded by the

bonding materials

4a, 4b, and 4c in the bonding region is a reduced pressure environment equivalent to the inside of the hollow structure. In the space surrounded by the

bonding materials

4a, 4b, and 4c in the bonding region (excluding the inside of the hollow structure in which the device elements are arranged), the filling material 6 different from the

bonding materials

4a, 4b, and 4c is filled. Is. Other configurations are the same as those of the second embodiment.

The main purpose of filling the filling material 6 into the space surrounded by the

bonding materials

4a, 4b and 4c is to further improve the airtightness. In particular, since the present invention is made for the purpose of reducing the joint load, the elastic modulus of the filling material 6 needs to be lower than the elastic modulus of the

bonding materials

4a, 4b, and 4c in the temperature range at the time of bonding. It is said. However, the material of the filling material 6 is not specified, and for example, a resin material can be suitably used. Since the resin material is sufficiently soft with respect to the

bonding materials

4a, 4b, and 4c (for example, Au), the function of preventing the progress of cracks is not impaired by the presence of the resin material, and the bonding function is further provided. In addition, an effect of providing a function of assisting the bonding of the

bonding materials

4a, 4b, and 4c can be expected, and an effect of blocking the leak path by the resin material filled in the voids can be expected. In addition to the resin material, a metal material can also be used for the filling material 6. By forming a metal material softer than the

bonding materials

4a, 4b, and 4c (for example, Au), for example, a metal such as indium, in advance between the

bonding materials

4a, 4b, and 4c by a plating method or the like, the above resin material An auxiliary effect of higher bonding strength can be expected. The filling material 6 can be a liquid material, for example, a viscous fluid, when only the effect of blocking the leak path is expected. Since the molecules of the liquid material are larger than the molecules of the gas, it is possible to prevent the leak particularly effectively against an extremely fine leak path through which only the gas passes.

A device package according to Example 9 of the present invention will be described with reference to the drawings. FIG. 14 is a cross-sectional view schematically showing a configuration of a device package according to Example 9 of the present invention.

In Embodiments 1 to 8, individual device packages are shown, but in Embodiment 9, a plurality of these device packages are connected to form multiple wafers to form a wafer. Other configurations are the same as those in the first to eighth embodiments.

According to Example 9, a large number of packages can be bonded together, which is advantageous in terms of productivity. By cutting these joined together at a broken line portion in the figure by a dividing device such as a dicer, a highly airtight device package equivalent to the individual package shown so far can be obtained.

Although various embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and it goes without saying that more modifications can be made without departing from the spirit of the invention. It is.

Claims

A device package in which a device element is arranged inside a hollow structure of a package formed by joining a plurality of members,
A first bonding material that is disposed so as to include an outer peripheral edge region of a bonding region between the plurality of members, and that bonds the plurality of members;
A second bonding material that is disposed so as to include an inner peripheral edge region of a bonding region between the plurality of members, and that bonds the plurality of members;
A bonding material pattern having
The inside of the hollow structure is depressurized,
A device package having a void in a region between the first bonding material and the second bonding material.
Of the bonding regions between the plurality of members, the region between the first bonding material and the second bonding material is arranged by the first bonding material and the second bonding material among the bonding regions between the plurality of members. The device package according to claim 1, wherein the device package is smaller than a stress applied to the provided region.
3. The device package according to claim 1, wherein the first bonding material and the second bonding material are metal materials.
The bonding material pattern is disposed at a predetermined interval from each of the first bonding material and the second bonding material in a part of a space in a region between the first bonding material and the second bonding material. And having one or a plurality of third bonding materials for bonding the plurality of members,
4. The device according to claim 1, further comprising a space in each region between the first bonding material and the third bonding material and between the second bonding material and the third bonding material. 5. The device package according to one.
The bonding material pattern is disposed in a part of a space in a region between the first bonding material and the third bonding material and connected to each of the first bonding material and the third bonding material. A plurality of fourth joining materials for joining the plurality of members;
5. The device package according to claim 4, wherein a void is provided in a region surrounded by the first bonding material, the third bonding material, and the fourth bonding material.
The shape of the corner of the space in the region surrounded by the first bonding material, the third bonding material, and the fourth bonding material is formed in an arc shape. Device package.
The bonding material pattern is disposed in a part of a space in a region between the second bonding material and the third bonding material and connected to each of the second bonding material and the third bonding material. A plurality of fifth joining materials for joining the plurality of members;
The device package according to any one of claims 4 to 6, further comprising a void in a region surrounded by the second bonding material, the third bonding material, and the fifth bonding material.
The shape of the corner of the space in the region surrounded by the second bonding material, the third bonding material, and the fifth bonding material is formed in an arc shape. Device package.
The fourth bonding material and the fifth bonding material are arranged such that at least one of the fourth bonding material and the fifth bonding material does not exist on the radiation from the center of the package. The device package according to claim 7 or 8, characterized in that
The bonding material pattern is disposed in a part of a space in a region between the plurality of third bonding materials, and is connected to each of the third bonding materials, and a plurality of bonding members bonding the plurality of members. A sixth joining material of
The device package according to any one of claims 4 to 8, wherein a void is provided in a region surrounded by the third bonding material and the sixth bonding material.
10. The device package according to claim 9, wherein a shape of a corner portion of a space surrounded by the third bonding material and the sixth bonding material is formed in an arc shape.
In the fourth bonding material, the fifth bonding material, and the sixth bonding material, at least one of the fourth bonding material and the fifth bonding material does not exist on the radiation from the central portion of the package. The device package according to claim 10, wherein the device package is disposed.
The device package according to any one of claims 1 to 12, wherein one member of the plurality of members is provided with a bonding material in an entire region of a bonding region between the plurality of members.
The device package according to claim 1, further comprising a barrier layer interposed between at least the plurality of members and the bonding material pattern.
The filling material made of a material having a lower elastic modulus than that of the bonding material is provided in the space in the bonding region between the plurality of members. Device package.
16. The device package according to claim 15, wherein the filling material is made of any one of a metal material, a resin material, and a liquid.
The plurality of members are:
A base on which a device element is formed or mounted;
A frame-shaped spacer disposed on the outer periphery of the device element of the base;
A cap disposed on the opposite side of the spacer from the base side and covering a space on the inner peripheral side of the spacer;
With
The first bonding material is disposed so as to include an outer peripheral edge region of each bonding region between the base and the spacer and between the spacer and the cap,
The said 2nd joining material is arrange | positioned so that the area | region of the inner periphery part of each joining area | region between the said base and the said spacer and between the said spacer and the said cap may be included. The device package according to any one of 1 to 16.
The plurality of members are:
A base on which a device element is formed or mounted;
A cap having a recess formed in a region including the device element on the base-side surface;
With
The first bonding material is disposed so as to include an outer peripheral region of a bonding region between the base and the cap;
The device according to any one of claims 1 to 16, wherein the second bonding material is disposed so as to include a region of an inner peripheral edge of a bonding region between the base and the cap. package.
An electronic module comprising the device package according to any one of claims 1 to 18.
An electronic device comprising the device package according to any one of claims 1 to 18 or the electronic module according to claim 19.