WO2009098241A1 - Encapsulation de dispositifs optoélectroniques - Google Patents

Encapsulation de dispositifs optoélectroniques Download PDF

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Publication number
WO2009098241A1
WO2009098241A1 PCT/EP2009/051288 EP2009051288W WO2009098241A1 WO 2009098241 A1 WO2009098241 A1 WO 2009098241A1 EP 2009051288 W EP2009051288 W EP 2009051288W WO 2009098241 A1 WO2009098241 A1 WO 2009098241A1
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WO
WIPO (PCT)
Prior art keywords
layer
inorganic
optoelectronic
encapsulation
deposited
Prior art date
Application number
PCT/EP2009/051288
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English (en)
Inventor
Fachri Atamny
Original Assignee
Oerlikon Trading Ag, Trübbach
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Filing date
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Publication of WO2009098241A1 publication Critical patent/WO2009098241A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to the field of solar optoelectronic devices. Particularly, methods for the protection of such devices against environmental influences such as wind, scratch, moisture, etc are provided.
  • Influences such as wind, scratch, moisture and/or gases like oxygen etc. acting on optoelectronic devices can lead to a reduction of the performance and/or the life time of the device.
  • All optoelectronic devices independently of the technology being used to manufacture them, have to be protected from such environmental influences, especially from oxygen, from water and water vapor.
  • the devices have to be protected mechanically against scratching and have to be mechanically stabilized to avoid breaking of the device.
  • a particular subgroup of optoelectronic devices are solar cells and/or solar modules, i.e. pa- nels of solar cells.
  • Conventional solar cells are manufactured either by using bulk silicon sheets such as wafers or ribbons as carrier, i.e. substrate, and as active absorber layer or by depositing thin film structures on a glass substrate, which has excellent optical properties and which is also an excellent environmental barrier.
  • Most solar cells today manufactured on glass substrates are encapsulated with an additional glass and a foil in between.
  • a foil is used usual- Iy between the two glasses as a lamination to guarantee an efficient encapsulation.
  • Glass is, however, by its nature rigid and heavy. In addition glass is relatively expensive. Furthermore, encapsulation of the solar cell between two glasses increases manufacturing costs.
  • the solar cells is covered with a "plastic” foil and a glass substrate on top of the foil.
  • the solar module is then heated at high temperature leading to "melting" the foil between the two glasses. This process results in covering the solar cells by the foil and bonding the two glasses together.
  • This encapsulation, i.e. lamination, process is expensive and difficult to accomplish, because it requires several different process steps as well as requires two glasses and a foil in between.
  • the generally used encapsulation/lamination of solar cells has the disadvantage that it is costly, especially for encapsulation of big thin film solar panels.
  • the encapsulation/lamination yield will decrease, since the two glasses have to be pressed against each other to encapsulate the cells.
  • the present invention thus relates to an optoelectronic device comprising a substrate, an optoelectronic layer, and two inorganic thin layers of different types, wherein the optoelectronic layer is deposited on the substrate and wherein the first inorganic layer is an encapsulation layer deposited on the optoelectronic layer and the second inorganic layer is a protective layer that is deposited on the first inorganic layer.
  • the solution of the invention is based on a combination of two types of inorganic thin layers.
  • the first type of layers serves for encapsulation and the second type of layer as protection against the environment such as scratches and/or wear.
  • the first type of layers is deposited by a preferably single step PECVD processes, i.e. including only one loading / unloading operation into the process chamber.
  • a single step PECVD processes i.e. including only one loading / unloading operation into the process chamber.
  • process gases NH 3 , H 2 , SiH 4 , N 2 By essentially and discretely controlling the atmospheric conditions, e.g. of process gases NH 3 , H 2 , SiH 4 , N 2 , and other process parameters such as gas pressure, process power, and substrate temperature during the single step PECVD deposition process, several discrete layers of inorganic material are deposited.
  • the optoelectronic device is preferably an environmentally sensitive optoelectronic device. More preferably, the optoelectronic device is selected from the group consisting of a solar devices, a solar module, an organic photovoltaic device, an organic optoelectronic device such as organic light emitting diodes (OLED) be it either small molecules or polymer type, an or- ganic thin film transistor, an organic electrochromic display, an electrophoretic ink, and a LCD, preferably an LCD for watches and/or cell phones. Most preferably the optoelectronic device is a solar device, preferably based on a thin film solar cell, and/or a solar module, i.e. a panel of solar cells.
  • OLED organic light emitting diodes
  • the substrate can be made of glass, plastic, ceramics, metal. It can be a foil, e.g. made of plastics, or a metal sheet. - A -
  • the optoelectronic layer may be any optoelectronic layer known to the skilled person.
  • the optoelectronic layer may comprise two electrodes with an organic semiconductor layer embedded between these two electrodes.
  • One of the electrodes is usually a metal cathode, while the other one is usually a transparent anode.
  • Solar devices comprising solar cells as optoelectronic layers are known in the art.
  • solar device technologies there are various solar device technologies; some are based on crystalline silicon, the so called bulk silicon solar devices, which can be manufactured from single silicon crystalline wafers or from polycrystal- line silicon or ribbon silicon materials, others are based on inorganic thin solar cells, such as amorphous silicon, micro crystalline silicon, Cadmium Telluride (CdTe), CIS (cadmium- indium-(di)selenide) / CIGS (cadmium- indium-gallium-(di)selenide).
  • CdTe Cadmium Telluride
  • CIS cadmium- indium-(di)selenide
  • CIGS cadmium- indium-gallium-(di)selenide
  • An additional solar cell category is the organic based solar cells.
  • the number of inorganic layers is > 2, more preferably > 2 and ⁇ 10.
  • the thickness of each layer is > 15 nm and ⁇ 1000 nm, preferably, > 15 nm and ⁇ 100 nm. The upper limit can be adjusted according to specific requirements.
  • the first inorganic layer is used as an encapsulation layer, i.e. a barrier layer that protects the optoelectronic layer from environmental influences, preferably from moisture, water, water vapor and gases such as oxygen.
  • the first inorganic layer may be made from any suita- ble material that acts as an encapsulation layer.
  • the encapsulation layer - together with the substrate - completely seals off and/or covers the optoelectronic layer.
  • the first organic layer comprises siliconnitride.
  • the first inorganic layer comprises several discrete layers, i.e. a stack of layers. These discrete layers may not only vary in their stoechiometric composition but also in the elements from which they are composed.
  • the first inorganic layer comprises a multilayer siliconnitride stack.
  • the first inorganic layer is deposited on the optoelectronic layer, preferably be means of a vapor deposition technique, more preferably by means of physical vapor deposition (PVD), chemical vapor deposition (CVD), and most preferably by plasma enhanced CVD (PECVD).
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced CVD
  • the second inorganic layer is used as protection layer, i.e. a layer that protects the optoelectronic device mechanically against scratching and wear and that mechanically stabilizes the device to avoid breaking of the device.
  • the second inorganic layer may be made from any suitable material that acts as a protective layer.
  • the second inorganic layer comprises diamond-like-carbon (DLC) and/or tetrahedral amorphous carbon (ta-C).
  • the first organic layer comprises DLC.
  • the second inorganic layer likewise comprises several discrete layers, i.e. a stack of layers.
  • the second inorganic layer is deposited on the optoelectronic layer, preferably be means of a vapor deposition technique, more preferably by means of physical vapor deposition (PVD), chemical vapor deposition (CVD), and most preferably by plasma enhanced CVD (PECVD).
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced CVD
  • the present invention relates to a method for producing an optoelectronic device.
  • a method for the production of a protected optoelectronic device com- prising the steps of: a) Providing an optoelectronic layer deposited on a substrate; b) Depositing at least one inorganic encapsulation layer; and c) Depositing at least one inorganic protection layer.
  • the inorganic encapsulation layer of step b) and/or the inorganic protection layer of step c) comprise several discrete layers, i.e. a stack of layers as described above.
  • the inorganic encapsulation layer of step b) comprises a material as described above, preferably it comprises one or more siliconoxide(s), one or more siliconnitride(s), and/or one or more siliconoxinitride(s).
  • the inorganic protection layer of step c) comprises a material as described above, preferably diamond-like-carbon and/or tetrahedral amorphous carbon.
  • the stack of layers of the two inorganic layers can be deposited in a single or multiple deposition processes.
  • the deposition of the stack of layers of the two inorganic layers, respectively is carried out in a single vapor deposition process, preferably in a single PECVD process.
  • both types of layers are being deposited subsequently in the same deposition chamber without breaking vacuum.
  • the invention is directed to an optoelectronic device producible by the methods according to the first aspect of the invention.
  • Fig. 1 is an overview of the main classes of photovoltaic technologies.
  • Fig. 2 is a schematic representation of a typical build of a conventional solar module.
  • Fig. 3a shows a structure of a typical crystalline solar cell.
  • Fig. 3b describes the structure of a typical thin film solar cell.
  • Fig. 4 summarizes schematically the packing of thin film photovoltaic cells.
  • Fig. 5 shows an embodiment of the optoelectronic device according to the present invention.
  • Fig. 6 shows a more detailed view of the structure of the encapsulation layer according to the present invention.
  • Fig. 1 shows an overview of the main classes of the optoelectronic technologies, particularly photovoltaic technologies, with which the present invention can be used.
  • Fig. 2 is a schematic representation of a typical build of a conventional thin- film solar module on a glass substrate 1, which is a front glass.
  • a lamination layer 3 covering the whole device and a back glass 4 on top of it are necessary.
  • Figure 3a shows a cross section of a structure of a conventional crystalline solar cell, comprising a back electrode 8, an aluminum layer 5, an absorber layer, i.e. a p-layer, 6, an n-layer 7 and top electrodes 9.
  • FIG 3b shows a conventional thin-film solar cell, with a glass substrate 1, a transparent conductive oxide (TCO) front contact layer 11, a thin film absorber layer 12, e.g. silicon based, and a back contact electrode layer 13.
  • TCO transparent conductive oxide
  • Figure 4 schematically summarizes the packaging of conventional thin-film photovoltaic cells.
  • the thin film cell 15 is packaged between a front glass substrate 1, a back glass 4 and a plastic, e.g. polymeric, foil 16 in order to encapsulate the cell between the two glasses.
  • the encapsulation - i.e. the encapsulation foil / lamination layer and the back glass; jointly the so called lamination step - needs to offer mechanical and chemical stability, must seal off the solar cell hermetically and must closely fill the complex top structure of the device, e.g. the solar cell, during application of the film.
  • the solution according to the present invention aims at replacing at least one of the back glass and/or the encapsulation layer with a layer stack, being deposited by vapor phase deposition.
  • said layer stack is being deposited as at least one layer comprising diamond-like- carbon (DLC), Siliconoxide(s) (SiOx), Siliconnitride(s) (SiNy), Siliconoxinitride(s) (SiOx- Ny), tetrahedral amorphous carbon (ta-C) or a combination of layers of said materials.
  • DLC diamond-like- carbon
  • SiOx Siliconoxide(s)
  • SiNy Siliconnitride(s)
  • SiOx- Ny Siliconoxinitride(s)
  • ta-C tetrahedral amorphous carbon
  • Known technologies for this purpose are e. g. the deposition of diamond- like-carbon layers or tetrahedral amorphous carbon by means of plasma assisted vacuum deposition processes. Such processes normally are conducted under vacuum conditions with pressure below 10 "4 hPa, preferably below 10 "5 hPa.
  • a carbon donating gas, such as acetylen or alike, eventually diluted in further gases like hydrogen and inert gases like argon is being used in a vacuum deposition apparatus according to the known principles of CVD, PVD or PECVD.
  • the applicability of said inventive layer / layer stack is not restricted to rigid materials like glass or ceramics, but is also useful for flexible substrates like plastic, foil or metal sheets.
  • a layer / layer stack according to the invention can be deposited in PECVD equipment already used today in solar cell production, thereby allowing synergies in equipment handling and maintenance.
  • the present invention provides an encapsulation and protection method as well as a respective layer stack for optoelectronic devices, preferably for solar cells and/or solar panels.
  • Fig. 5 shows the result of such deposition of an encapsulation layer 19 and an additional a protection layer 20 according to the present invention.
  • the deposition of at least one, preferably a set of multiple inorganic layers - at least one of Siliconoxide(s) (SiOx), Siliconnitrides (SiNy), Siliconoxinitrides (SiOxNy) - in a single step vacuum deposition process is followed by the deposition of a protection layer 20, comprising an inorganic layer, preferably diamond- like-carbon (DLC) and/or tetrahedral amorphous carbon (ta-C) - as a continuation of the deposition step of the inorganic layer(s) or separately as a further vacuum deposition process performed in a separated chamber.
  • DLC diamond- like-carbon
  • ta-C tetrahedral amorphous carbon
  • Fig. 5 further shows that the thin film solar cell 15 on the front glass substrate 1 is covered by a stack of multiple inorganic layers 19 plus a protection layer 20 on top of said encapsulation layer 19.
  • Fig. 6 shows in more detail the structure of the encapsulation layer designed as a stack of multiple inorganic layers 25.
  • the deposited stack of inorganic layers shows, however, due to the manufacturing process occasional pinhole defects 23 and incorporated particles 24.
  • each layer of stack 25 shields against the environment independently and the average diffusion lengths between defects are increased significantly. Due to the fact that multiple discrete layers are deposited and present horizontally, the effect of defects such as particles 24 and pinhole defects 23 are minimal perpendicular to the plane of attack. Unwanted chemical agents such as oxygen and vapor statistically find much less direct access paths across the multilayer inorganic stacks than in a much thicker single layer barrier with the same number of defects. This is why the diffusion coefficient across such multilayer inorganic stacks is much lower than across a single layer with the same overall thickness.
  • the solution of the invention is based on a combination of two types of inor- ganic thin layers.
  • the first type of layers serves for encapsulation and the second type of layer as protection against the environment such as scratches or wear.
  • the first type of layers is deposited by a preferably single step PECVD processes, i.e. including only one loading / unloading operation into the process chamber.
  • a single step PECVD processes i.e. including only one loading / unloading operation into the process chamber.
  • process gases NH 3 , H 2 , SiH 4 , N 2 By essentially and discretely controlling the atmospheric conditions, e.g. of process gases NH 3 , H 2 , SiH 4 , N 2 , and other process parameters such as gas pressure, process power, and substrate temperature during the single step PECVD deposition process, several discrete layers of inorganic material are deposited.
  • These layers may thus discreetly vary, not only in their stoechiometric composition, but also in the elements from which they are composed.
  • the layers according to the present invention provide faster packaging than prior art and can prevent damage to the device from moisture and oxygen, thereby improving the lifetime of the device and reducing the costs generated by encapsulation, i.e. lamination.
  • the second layer system (preferably DLC and /or ta-C) serve as protection against environ- mental influences, such as scratching, corrosion, wear etc.
  • a substrate is placed in a vacuum deposition chamber and the chamber is being pumped down to a vacuum of less than 10 "4 mbar, preferably 10 "5 .
  • the application of an adamantine carbon layer then takes place by way of a sole plasma-aided depositing of carbon from the gas phase. - 11 -
  • Example 1 Encapsulation layer
  • the parameters in Table 1 can be used. Note that the deposition temperatures can be substantially reduced, if necessary, without losing functionality of the encapsulation layer.
  • the process takes place in a parallel plate PECVD reactor with a silicon containing precursor gas (like Silane SiH 4 ) and a nitrogen delivering gas (like ammonia NH 3 ). Further process gases comprise hydrogen and/or inert gases like Argon.
  • a multilayer silicon nitride stack deposited at 120 0 C showed a WVTR of 5.66xlO "4 g/m 2 /day (Water Vapor transition Rate).
  • the deposition temperature has been lowered to 80 0 C with promising results.
  • silicon nitride (SiNx) and silicon oxynitride (SiOxNy) layers are deposited alternating on top of each other.
  • the layers are transparent in the visible range, which is a requirement for most structures of optoelectronic devices.
  • the multiple layers deposited by PECVD achieve excellent step coverage for the covering of all patterned structures of the solar thin film cells, and the layers retain high barrier properties. Using a PECVD single run multi layer process, complex structures are covered perfectly.
  • the production of multilayer inorganic barrier is reproducible, and provides high throughput and low risk for contamination due to the single step process.
  • the multilayer provides no mechanical miss-match and is chemically and mechanically stable.
  • the inorganic layers according to the present invention are generally chemically very stable (unlike the inorganic/organic stacks in prior art), excellent corrosion resistance is achieved.
  • the DLC layer or adamantine carbon layer is then generated as the cover layer by a plasma CVD deposition of carbon from the gas phase, in which case a carbon- containing gas, preferably a carburetted water gas, particularly acetylene, is used as the reaction gas.
  • a carbon- containing gas preferably a carburetted water gas, particularly acetylene
  • the reaction gas for depositing carbon may, in addition to the carbon-containing gas, contain hydrogen and noble gas, preferably argon or xenon.
  • the set pressure in the process chamber in this case is between 10 ⁇ 4 mbar to 10 ⁇ 2 hPa.

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention porte sur un dispositif optoélectronique comprenant un substrat (1), une couche optoélectronique (15) et deux couches minces inorganiques de types différents (19, 20), la première couche inorganique (19) étant une couche d'encapsulation déposée sur la couche optoélectronique et la seconde couche inorganique (20) étant une couche protectrice qui est déposée sur la première couche inorganique. Ces couches peuvent être produites dans une seule procédure de dépôt en phase vapeur.
PCT/EP2009/051288 2008-02-05 2009-02-04 Encapsulation de dispositifs optoélectroniques WO2009098241A1 (fr)

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US2623208P 2008-02-05 2008-02-05
US61/026,232 2008-02-05

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017153968A1 (fr) * 2016-03-11 2017-09-14 Universidad Eafit Revêtement avec éléments opto-électroniques
WO2024094872A1 (fr) 2022-11-03 2024-05-10 Nanofilm Technologies International Limited Cellule solaire revêtue

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017153968A1 (fr) * 2016-03-11 2017-09-14 Universidad Eafit Revêtement avec éléments opto-électroniques
WO2024094872A1 (fr) 2022-11-03 2024-05-10 Nanofilm Technologies International Limited Cellule solaire revêtue

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