WO2009095909A3 - Solar cells - Google Patents

Solar cells Download PDF

Info

Publication number
WO2009095909A3
WO2009095909A3 PCT/IL2009/000105 IL2009000105W WO2009095909A3 WO 2009095909 A3 WO2009095909 A3 WO 2009095909A3 IL 2009000105 W IL2009000105 W IL 2009000105W WO 2009095909 A3 WO2009095909 A3 WO 2009095909A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
organic
metal
semiconductor
monolayer
Prior art date
Application number
PCT/IL2009/000105
Other languages
French (fr)
Other versions
WO2009095909A2 (en
Inventor
David Cahen
Rotem Har-Lavan
Adi Salomon
Oliver Seitz
Florent Thieblemont
Original Assignee
Yeda Research And Development Company Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yeda Research And Development Company Ltd. filed Critical Yeda Research And Development Company Ltd.
Publication of WO2009095909A2 publication Critical patent/WO2009095909A2/en
Publication of WO2009095909A3 publication Critical patent/WO2009095909A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention discloses a novel solar cell (100) comprising a multi-layer structure comprising a metal layer, (102) a semiconductor layer; (106) and an organic molecular monolayer (104) m between the metal and semiconductor layers. The organic molecular monolayer operates as a thin controllable insulator layer,- thereby enabling the multilayer structure to be operable as a MOIS (Metal-Organic-Insulator-Semiconductor) junction. According to the invention, the insulating layer is made of an organic monolayer having a high-degree of continuity of the molecules' arrangement within the layer, thus forming a large area junction.
PCT/IL2009/000105 2008-01-28 2009-01-28 Solar cells WO2009095909A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2407308P 2008-01-28 2008-01-28
US61/024,073 2008-01-28

Publications (2)

Publication Number Publication Date
WO2009095909A2 WO2009095909A2 (en) 2009-08-06
WO2009095909A3 true WO2009095909A3 (en) 2009-09-24

Family

ID=40794738

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2009/000105 WO2009095909A2 (en) 2008-01-28 2009-01-28 Solar cells

Country Status (1)

Country Link
WO (1) WO2009095909A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437224A (en) * 2011-12-01 2012-05-02 营口联创太阳能科技有限公司 Amorphous silicon film battery of Schottky structure with dielectric layer and production method
WO2015084896A1 (en) * 2013-12-02 2015-06-11 Solexel, Inc. Passivated contacts for back contact back junction solar cells

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1572182A (en) * 1975-08-18 1980-07-23 Ici Ltd Method of coating
WO2002005349A1 (en) * 2000-07-12 2002-01-17 California Institute Of Technology Electrical passivation of silicon-containing surfaces using organic layers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1572182A (en) * 1975-08-18 1980-07-23 Ici Ltd Method of coating
WO2002005349A1 (en) * 2000-07-12 2002-01-17 California Institute Of Technology Electrical passivation of silicon-containing surfaces using organic layers

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
AMBRICO M ET AL: "Probing electrical properties of molecule-controlled or plasma-nitrided GaAs surfaces: Two different tools for modifying the electrical characteristics of metal/GaAs diodes", APPLIED SURFACE SCIENCE, ELSEVIER, AMSTERDAM, NL, vol. 252, no. 21, 31 August 2006 (2006-08-31), pages 7636 - 7641, XP024892731, ISSN: 0169-4332, [retrieved on 20060831] *
HAICK H ET AL: "Effect of molecular binding to a semiconductor on metal/molecule/semiconductor junction behavior", JOURNAL OF PHYSICAL CHEMISTRY. B, MATERIALS, SURFACES, INTERFACES AND BIOPHYSICAL, WASHINGTON, DC, US, vol. 109, no. 19, 19 May 2005 (2005-05-19), pages 9622 - 9630, XP002474764, ISSN: 1089-5647, [retrieved on 20050420] *
HSU J W P ET AL: "Nature of electrical contacts in a metal-molecule-semiconductor system", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B: MICROELECTRONICSPROCESSING AND PHENOMENA, AMERICAN VACUUM SOCIETY, NEW YORK, NY, US, vol. 21, no. 4, 1 July 2003 (2003-07-01), pages 1928 - 1935, XP012010043, ISSN: 0734-211X *
YONG-JUN LIU, HUA-ZHONG YU: "Molecular passivation of mercury-silicon (p-type) diode junctions: alkylation, oxidation, and alkylsilation", JOURNAL OF PHYSICAL CHEMISTRY B ACS USA, vol. 107, no. 31, 7 August 2003 (2003-08-07), American Chemical Society USA, pages 7803 - 7811, XP002535443, ISSN: 1089-5647 *

Also Published As

Publication number Publication date
WO2009095909A2 (en) 2009-08-06

Similar Documents

Publication Publication Date Title
Jiang et al. Flexible electronics based on 2D transition metal dichalcogenides
WO2011102677A3 (en) Method for manufacturing a nanostructured inorganic/organic heterojunction solar cell
WO2010058976A3 (en) Solar cell and method of manufacturing the same
WO2010002516A3 (en) Low-cost double structure substrates and methods for their manufacture
WO2011156705A3 (en) Selective formation of metallic films on metallic surfaces
WO2007120175A3 (en) Apparatus and methods for solar energy conversion using nanoscale cometal structures
WO2008049040A3 (en) Electrode for energy storage device
WO2008091890A3 (en) Roll-to-roll integration of thin film solar modules
WO2009041659A1 (en) Solar cell
WO2008039757A3 (en) Semiconductor devices and methods from group iv nanoparticle materials
WO2011102673A3 (en) All-solid-state heterojunction solar cell
WO2011025631A3 (en) Semiconductor crystal based radiation detector and method of producing the same
WO2009063754A1 (en) Photoelectric conversion element and method for manufacturing the same
WO2009075551A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2011097089A3 (en) Recessed semiconductor substrates
SG165235A1 (en) Semiconductor device and method of providing z-interconnect conductive pillars with inner polymer core
WO2007082674A3 (en) Electroluminescent light emitting unit comprising an arrangement of organic layers and method for producing said unit
TW200737520A (en) Gate dielectric structure and an organic thin film transistor based thereon
TW200943546A (en) Thermally stabilized electrode structure
WO2009041660A1 (en) Substrate for solar cell and solar cell
TW200737246A (en) Solid electrolyte capacitor and production method thereof
WO2007142865A3 (en) Thin film photovoltaic structure and fabrication
WO2010078340A3 (en) Semiconductor devices including dual gate structures and methods of forming such semiconductor devices
WO2012024647A3 (en) Photovoltaic cell on substrate
WO2010118321A3 (en) Composite nanorod-based structures for generating electricity

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09705449

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09705449

Country of ref document: EP

Kind code of ref document: A2