WO2009075506A3 - Light emitting device using compound semiconductor - Google Patents

Light emitting device using compound semiconductor Download PDF

Info

Publication number
WO2009075506A3
WO2009075506A3 PCT/KR2008/007270 KR2008007270W WO2009075506A3 WO 2009075506 A3 WO2009075506 A3 WO 2009075506A3 KR 2008007270 W KR2008007270 W KR 2008007270W WO 2009075506 A3 WO2009075506 A3 WO 2009075506A3
Authority
WO
WIPO (PCT)
Prior art keywords
clad layer
light emitting
emitting device
layer
compound semiconductor
Prior art date
Application number
PCT/KR2008/007270
Other languages
French (fr)
Other versions
WO2009075506A2 (en
WO2009075506A4 (en
Inventor
Doyeol Ahn
Bun-Hei Koo
Original Assignee
Wooree Lst Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wooree Lst Co., Ltd. filed Critical Wooree Lst Co., Ltd.
Publication of WO2009075506A2 publication Critical patent/WO2009075506A2/en
Publication of WO2009075506A3 publication Critical patent/WO2009075506A3/en
Publication of WO2009075506A4 publication Critical patent/WO2009075506A4/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system

Abstract

Disclosed is a light emitting device using a compound semiconductor. The light emitting device optimizes strain applied to an active layer to minimize a piezoelectric field and a spontaneous polarization field in the active layer and to maximize light emitting efficiency. The light emitting device using a compound semiconductor includes an upper clad layer, an active layer and a lower clad layer, wherein the upper clad layer includes a first clad layer and a second clad layer; the lower clad layer includes a third clad layer and a fourth clad layer; the second clad layer and the third clad layer are disposed on the top and bottom of the active layer, respectively; the first clad layer and the second clad layer are different from each other in their chemical compositions; and the third clad layer and the fourth clad layer are different from each other in their chemical compositions.
PCT/KR2008/007270 2007-12-11 2008-12-09 Light emitting device using compound semiconductor WO2009075506A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20070128105A KR100925704B1 (en) 2007-12-11 2007-12-11 Compound semiconductor light emitting device
KR10-2007-0128105 2007-12-11

Publications (3)

Publication Number Publication Date
WO2009075506A2 WO2009075506A2 (en) 2009-06-18
WO2009075506A3 true WO2009075506A3 (en) 2009-09-11
WO2009075506A4 WO2009075506A4 (en) 2009-11-05

Family

ID=40755975

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/007270 WO2009075506A2 (en) 2007-12-11 2008-12-09 Light emitting device using compound semiconductor

Country Status (2)

Country Link
KR (1) KR100925704B1 (en)
WO (1) WO2009075506A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447954B (en) * 2009-09-15 2014-08-01 Showa Denko Kk Light-emitting diode, light-emitting diode lamp and lighting apparatus
JP5166594B1 (en) 2011-12-12 2013-03-21 株式会社東芝 Semiconductor light emitting device
KR20140074516A (en) * 2012-12-10 2014-06-18 서울바이오시스 주식회사 Method of grawing gallium nitride based semiconductor layers and method of fabricating light emitting device therewith
JP7314181B2 (en) * 2018-06-07 2023-07-25 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッド Method and material deposition system for forming semiconductor layers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020000898A (en) * 2000-06-20 2002-01-09 박근섭 Nitride compound semiconductor device and method of fabricating the same
JP2003037290A (en) * 2001-07-25 2003-02-07 Shin Etsu Handotai Co Ltd Light-emitting element
KR100661709B1 (en) * 2004-12-23 2006-12-26 엘지이노텍 주식회사 Nitride semiconductor LED and fabrication method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100753147B1 (en) * 1998-03-12 2007-08-30 니치아 카가쿠 고교 가부시키가이샤 Nitride semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020000898A (en) * 2000-06-20 2002-01-09 박근섭 Nitride compound semiconductor device and method of fabricating the same
JP2003037290A (en) * 2001-07-25 2003-02-07 Shin Etsu Handotai Co Ltd Light-emitting element
KR100661709B1 (en) * 2004-12-23 2006-12-26 엘지이노텍 주식회사 Nitride semiconductor LED and fabrication method thereof

Also Published As

Publication number Publication date
WO2009075506A2 (en) 2009-06-18
WO2009075506A4 (en) 2009-11-05
KR20090061194A (en) 2009-06-16
KR100925704B1 (en) 2009-11-10

Similar Documents

Publication Publication Date Title
WO2009086028A3 (en) Carbazole-containing materials in phosphorescent light emitting diodes
WO2009030980A3 (en) Photonic via waveguide for pixel arrays
TW200943512A (en) Multi-chip stack package
WO2010038005A3 (en) Organic electroluminescent device
WO2006053219A8 (en) Vertical production of photovoltaic devices
WO2011069769A3 (en) Laser diode assembly and method for producing a laser diode assembly
WO2010151083A3 (en) Compound for an organic photoelectric element, and an organic photoelectric element comprising the same
WO2008143773A3 (en) Single crystal phosphor light conversion structures for light emitting devices
EP1914813A3 (en) Semiconductor optoelectronic device
WO2006104935A3 (en) Light emitting diodes and methods of fabrication
WO2009114190A3 (en) Photovoltaic cell module and method of forming same
WO2010047553A3 (en) Semiconductor light emitting device
EP2254167A3 (en) Light emitting device and light emitting device package having the same
WO2010000855A3 (en) Multi -junction photovoltaic module and the processing thereof
WO2010022101A3 (en) Organic light emitting diode lighting devices
WO2006113205A3 (en) Aryl-ethylene substituted aromatic compounds and their use as organic semiconductors
WO2011031098A3 (en) Semiconductor light emitting device
WO2011112765A3 (en) Flexible solar cell interconnection systems and methods
EP2378572A3 (en) Electrode configuration for a light emitting device
WO2011093586A3 (en) Electronic device which performs as light emitting diode and solar cell
WO2011050179A3 (en) Optoelectronic semiconductor device and method of fabrication
WO2012108627A3 (en) Light emitting diode having photonic crystal structure and method of fabricating the same
WO2009099282A3 (en) Solar cell having multiple transparent conductive layers and manufacturing method thereof
EP2003751A3 (en) Semiconductor optical amplifying device, system and element
WO2010015310A3 (en) Solar cell and method for producing a solar cell

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08860201

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08860201

Country of ref document: EP

Kind code of ref document: A2