WO2009072780A3 - Method for making metal oxide nano particle and light emitting device having light emitting layer distributed metal oxide nano particle and fabrication method thereof - Google Patents

Method for making metal oxide nano particle and light emitting device having light emitting layer distributed metal oxide nano particle and fabrication method thereof Download PDF

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Publication number
WO2009072780A3
WO2009072780A3 PCT/KR2008/007053 KR2008007053W WO2009072780A3 WO 2009072780 A3 WO2009072780 A3 WO 2009072780A3 KR 2008007053 W KR2008007053 W KR 2008007053W WO 2009072780 A3 WO2009072780 A3 WO 2009072780A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal oxide
oxide nano
light emitting
nano particle
thin film
Prior art date
Application number
PCT/KR2008/007053
Other languages
French (fr)
Other versions
WO2009072780A2 (en
Inventor
Tae-Whan Kim
Fushan Li
Jae-Hun Jung
Young-Ho Kim
Original Assignee
Univ Sogang Ind Univ Coop Foun
Tae-Whan Kim
Fushan Li
Jae-Hun Jung
Young-Ho Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Sogang Ind Univ Coop Foun, Tae-Whan Kim, Fushan Li, Jae-Hun Jung, Young-Ho Kim filed Critical Univ Sogang Ind Univ Coop Foun
Publication of WO2009072780A2 publication Critical patent/WO2009072780A2/en
Publication of WO2009072780A3 publication Critical patent/WO2009072780A3/en

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/07—Polyamine or polyimide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A light-emitting device in accordance with an embodiment of the present invention can include a light-emitting layer, which has a light-emitting medium of metal oxide nano-particles distributed inside a mixture thin film being made of a dielectric polymer material and a conductive polymer material. Here, the metal oxide nano-particles can be formed by forming a first mixture thin film, forming a metal thin film on one side of the first mixture thin film, and forming a second mixture thin film by hardening the precursor through heat treatment, in which the dielectric polymer material and the conductive polymer material have been mixed in the second mixture thin film, and forming metal oxide nano-particles, in which the metal oxide nano-particles are distributed inside the second mixture thin film during the hardening.
PCT/KR2008/007053 2007-12-06 2008-11-28 Method for making metal oxide nano particle and light emitting device having light emitting layer distributed metal oxide nano particle and fabrication method thereof WO2009072780A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070126041A KR100928305B1 (en) 2007-12-06 2007-12-06 Method for forming metal oxide nanoparticles and light emitting device comprising light emitting layer in which metal oxide nanoparticles are distributed, and method for manufacturing light emitting device
KR10-2007-0126041 2007-12-06

Publications (2)

Publication Number Publication Date
WO2009072780A2 WO2009072780A2 (en) 2009-06-11
WO2009072780A3 true WO2009072780A3 (en) 2009-07-23

Family

ID=40718335

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/007053 WO2009072780A2 (en) 2007-12-06 2008-11-28 Method for making metal oxide nano particle and light emitting device having light emitting layer distributed metal oxide nano particle and fabrication method thereof

Country Status (2)

Country Link
KR (1) KR100928305B1 (en)
WO (1) WO2009072780A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101139927B1 (en) * 2008-11-10 2012-04-30 한양대학교 산학협력단 Method for forming metal oxide semiconductor nanoparticles, polymer electroluminescence device using the metal oxide semiconductor nanoparticles and fabricating the same
KR101124958B1 (en) * 2010-12-14 2012-03-27 한국기계연구원 A method of fabricating semiconducting device by using microwave irradiation and thus-prepared semiconducting device
US11133390B2 (en) * 2013-03-15 2021-09-28 The Boeing Company Low temperature, thin film crystallization method and products prepared therefrom

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095549A (en) * 2002-08-09 2004-03-25 Semiconductor Energy Lab Co Ltd Organic electroluminescent element
US20050176915A1 (en) * 2003-04-22 2005-08-11 Hyun-Nam Cho Polyarylene compounds, polymers thereof, and electroluminescence element using the same
KR20060100151A (en) * 2005-03-16 2006-09-20 한양대학교 산학협력단 Quantom dot light-emitting diode combined with polymer
KR100710458B1 (en) * 2005-11-11 2007-04-24 한양대학교 산학협력단 Method for fabricating electroluminescence device utilizing nanoparticles embedded in polymer thin film and electroluminescence device fabricated by it and method for driving it
EP1837931A2 (en) * 2006-03-21 2007-09-26 Samsung Electronics Co., Ltd. Conductive transparent material, manufacturing method thereof and display device comprising the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100792823B1 (en) 2006-10-17 2008-01-14 한양대학교 산학협력단 Light emitting device and manufacturing method thereof
KR100820375B1 (en) 2007-05-14 2008-04-08 한양대학교 산학협력단 Electroluminescence device and method for fabricating and driving the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095549A (en) * 2002-08-09 2004-03-25 Semiconductor Energy Lab Co Ltd Organic electroluminescent element
US20050176915A1 (en) * 2003-04-22 2005-08-11 Hyun-Nam Cho Polyarylene compounds, polymers thereof, and electroluminescence element using the same
KR20060100151A (en) * 2005-03-16 2006-09-20 한양대학교 산학협력단 Quantom dot light-emitting diode combined with polymer
KR100710458B1 (en) * 2005-11-11 2007-04-24 한양대학교 산학협력단 Method for fabricating electroluminescence device utilizing nanoparticles embedded in polymer thin film and electroluminescence device fabricated by it and method for driving it
EP1837931A2 (en) * 2006-03-21 2007-09-26 Samsung Electronics Co., Ltd. Conductive transparent material, manufacturing method thereof and display device comprising the same

Also Published As

Publication number Publication date
KR20090059279A (en) 2009-06-11
KR100928305B1 (en) 2009-11-25
WO2009072780A2 (en) 2009-06-11

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