WO2009072717A3 - Method for forming semiconductor p-n junction layer by using aqueous phosphoric acid and device for applying the same - Google Patents

Method for forming semiconductor p-n junction layer by using aqueous phosphoric acid and device for applying the same Download PDF

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Publication number
WO2009072717A3
WO2009072717A3 PCT/KR2008/003813 KR2008003813W WO2009072717A3 WO 2009072717 A3 WO2009072717 A3 WO 2009072717A3 KR 2008003813 W KR2008003813 W KR 2008003813W WO 2009072717 A3 WO2009072717 A3 WO 2009072717A3
Authority
WO
WIPO (PCT)
Prior art keywords
phosphoric acid
aqueous phosphoric
junction layer
semiconductor
applying
Prior art date
Application number
PCT/KR2008/003813
Other languages
French (fr)
Other versions
WO2009072717A2 (en
Inventor
Jeong Seop Yoon
Min Soo Kim
Jae Myung Hur
Kazuhiro Shimada
Original Assignee
Jeong Seop Yoon
Min Soo Kim
Jae Myung Hur
Kazuhiro Shimada
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeong Seop Yoon, Min Soo Kim, Jae Myung Hur, Kazuhiro Shimada filed Critical Jeong Seop Yoon
Priority to DE112008003347T priority Critical patent/DE112008003347T5/en
Priority to JP2010536833A priority patent/JP2011525296A/en
Publication of WO2009072717A2 publication Critical patent/WO2009072717A2/en
Publication of WO2009072717A3 publication Critical patent/WO2009072717A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Nozzles (AREA)

Abstract

The present invention relates to a method for forming a semiconductor p-n junction layer by using aqueous phosphoric acid, in which aqueous phosphoric acid is coated on a silicon surface uniformly by spraying the aqueous phosphoric acid in a state of super fine particles with a specially devised sprayer at a room temperature and an atmospheric pressure to a thickness of 0,2 mm 0,8 mm and diffuses thermally to form a p-n junction layer on a P-type surface of a substrate of semiconductor silicon. Also disclosed is a device for applying aqueous phosphoric acid to form a semiconductor p-n junction layer including a plate (2) for securing a silicon substrate (1) thereto, a transfer unit (10) for transferring the plate (2) to a stage (3) one pair of liquid spraying heads (20) arranged opposite to each other with an angle q therebetween over the stage (3) wherein the heads (20) mounted on the scanner (4) moves back and forth within a fixed section in a lateral direction for spraying the aqueous phosphoric acid to a surface of the silicicon substrate (1).
PCT/KR2008/003813 2007-12-07 2008-06-30 Method for forming semiconductor p-n junction layer by using aqueous phosphoric acid and device for applying the same WO2009072717A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112008003347T DE112008003347T5 (en) 2007-12-07 2008-06-30 A method for producing a semiconductor p-n junction using aqueous phosphoric acid and apparatus for applying the same
JP2010536833A JP2011525296A (en) 2007-12-07 2008-06-30 Method for forming semiconductor pn junction layer using phosphoric acid aqueous solution and phosphoric acid aqueous solution coating apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070127066A KR100835248B1 (en) 2007-12-07 2007-12-07 Fabricating method of a semiconductor p-n junction layer using an aqueous phosphoric acid and spread appratus for the same
KR10-2007-0127066 2007-12-07

Publications (2)

Publication Number Publication Date
WO2009072717A2 WO2009072717A2 (en) 2009-06-11
WO2009072717A3 true WO2009072717A3 (en) 2012-02-09

Family

ID=39770072

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/003813 WO2009072717A2 (en) 2007-12-07 2008-06-30 Method for forming semiconductor p-n junction layer by using aqueous phosphoric acid and device for applying the same

Country Status (4)

Country Link
JP (1) JP2011525296A (en)
KR (1) KR100835248B1 (en)
DE (1) DE112008003347T5 (en)
WO (1) WO2009072717A2 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07275751A (en) * 1994-04-05 1995-10-24 Toyota Auto Body Co Ltd Airless coating device
JP2003071327A (en) * 2001-09-03 2003-03-11 Seiko Epson Corp Apparatus and method of forming thin film, equipment and method of manufacturing liquid crystal device and liquid crystal device, and apparatus and method of manufacturing thin film structure and thin film structure
JP4126996B2 (en) * 2002-03-13 2008-07-30 セイコーエプソン株式会社 Device manufacturing method and device manufacturing apparatus
DE102005025933B3 (en) * 2005-06-06 2006-07-13 Centrotherm Photovoltaics Gmbh + Co. Kg Doping mixture for preparing and doping semiconductor surfaces, comprises a p- or n-dopant, for doping the semiconductor surfaces, water and mixture of two or more surfactants, where one of the surfactant is a non-ionic surfactant

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Development of a Phosphorus Spray Diffusion System for Low-Cost Silicon Solar Cells.", J. ELECTROCHEM, SOC., vol. 153, no. 7, 22 May 2006 (2006-05-22), pages A1391 - A1396 *

Also Published As

Publication number Publication date
JP2011525296A (en) 2011-09-15
KR100835248B1 (en) 2008-06-09
DE112008003347T5 (en) 2011-01-27
WO2009072717A2 (en) 2009-06-11

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