WO2009066389A1 - Sputter apparatus and method of sputtering - Google Patents

Sputter apparatus and method of sputtering Download PDF

Info

Publication number
WO2009066389A1
WO2009066389A1 PCT/JP2007/072624 JP2007072624W WO2009066389A1 WO 2009066389 A1 WO2009066389 A1 WO 2009066389A1 JP 2007072624 W JP2007072624 W JP 2007072624W WO 2009066389 A1 WO2009066389 A1 WO 2009066389A1
Authority
WO
WIPO (PCT)
Prior art keywords
substratum
sputter apparatus
sputtering
closed curve
gas introduction
Prior art date
Application number
PCT/JP2007/072624
Other languages
French (fr)
Japanese (ja)
Inventor
Masahiro Shibamoto
Kazuto Yamanaka
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Priority to PCT/JP2007/072624 priority Critical patent/WO2009066389A1/en
Priority to US12/274,068 priority patent/US20090134012A1/en
Publication of WO2009066389A1 publication Critical patent/WO2009066389A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

A sputter apparatus characterized by having substratum holding means for holding of a substratum and a gas introduction path with multiple gas injection orifices disposed in the form of a closed curve at multiple positions surrounding the periphery of the substratum and further having gas introduction connection ports provided at at least two positions approximately opposite to each other on the closed curve.
PCT/JP2007/072624 2007-11-22 2007-11-22 Sputter apparatus and method of sputtering WO2009066389A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/072624 WO2009066389A1 (en) 2007-11-22 2007-11-22 Sputter apparatus and method of sputtering
US12/274,068 US20090134012A1 (en) 2007-11-22 2008-11-19 Sputtering apparatus and sputtering method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/072624 WO2009066389A1 (en) 2007-11-22 2007-11-22 Sputter apparatus and method of sputtering

Publications (1)

Publication Number Publication Date
WO2009066389A1 true WO2009066389A1 (en) 2009-05-28

Family

ID=40667226

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/072624 WO2009066389A1 (en) 2007-11-22 2007-11-22 Sputter apparatus and method of sputtering

Country Status (1)

Country Link
WO (1) WO2009066389A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897288A (en) * 1994-09-22 1996-04-12 Sony Corp Method and device for reflow
JPH10219442A (en) * 1996-12-05 1998-08-18 Tokyo Electron Ltd Sputtering apparatus
JP2000277509A (en) * 1999-03-29 2000-10-06 Kokusai Electric Co Ltd Substrate treating system
JP2002129317A (en) * 2000-10-24 2002-05-09 Nitto Denko Corp Reactive-gas introduction device for reactive sputtering
JP2004346406A (en) * 2003-05-26 2004-12-09 Anelva Corp Sputtering apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897288A (en) * 1994-09-22 1996-04-12 Sony Corp Method and device for reflow
JPH10219442A (en) * 1996-12-05 1998-08-18 Tokyo Electron Ltd Sputtering apparatus
JP2000277509A (en) * 1999-03-29 2000-10-06 Kokusai Electric Co Ltd Substrate treating system
JP2002129317A (en) * 2000-10-24 2002-05-09 Nitto Denko Corp Reactive-gas introduction device for reactive sputtering
JP2004346406A (en) * 2003-05-26 2004-12-09 Anelva Corp Sputtering apparatus

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