WO2009060319A3 - Method and apparatus for deriving an iso-dense bias and controlling a fabrication process - Google Patents

Method and apparatus for deriving an iso-dense bias and controlling a fabrication process Download PDF

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Publication number
WO2009060319A3
WO2009060319A3 PCT/IB2008/003804 IB2008003804W WO2009060319A3 WO 2009060319 A3 WO2009060319 A3 WO 2009060319A3 IB 2008003804 W IB2008003804 W IB 2008003804W WO 2009060319 A3 WO2009060319 A3 WO 2009060319A3
Authority
WO
WIPO (PCT)
Prior art keywords
iso
controlling
fabrication process
deriving
dense bias
Prior art date
Application number
PCT/IB2008/003804
Other languages
French (fr)
Other versions
WO2009060319A2 (en
Inventor
Joerg Bischoff
Heiko Weichert
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/936,747 external-priority patent/US20090116040A1/en
Priority claimed from US11/936,769 external-priority patent/US7598099B2/en
Priority claimed from US11/936,759 external-priority patent/US7639370B2/en
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to KR1020107011378A priority Critical patent/KR101483325B1/en
Priority to CN200880115157A priority patent/CN101855715A/en
Publication of WO2009060319A2 publication Critical patent/WO2009060319A2/en
Publication of WO2009060319A3 publication Critical patent/WO2009060319A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G01N2021/213—Spectrometric ellipsometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Micromachines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Embodiments of controlling a fabrication process using an iso-dense bias are generally described herein. Other embodiments may be described and claimed.
PCT/IB2008/003804 2007-11-07 2008-10-30 Method and apparatus for deriving an iso-dense bias and controlling a fabrication process WO2009060319A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020107011378A KR101483325B1 (en) 2007-11-07 2008-10-30 Method and apparatus for deriving an iso-dense bias and controlling a fabrication process
CN200880115157A CN101855715A (en) 2007-11-07 2008-10-30 Method and apparatus for deriving an iso-dense bias and controlling a fabrication process

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US11/936,769 2007-11-07
US11/936,747 US20090116040A1 (en) 2007-11-07 2007-11-07 Method of Deriving an Iso-Dense Bias Using a Hybrid Grating Layer
US11/936,747 2007-11-07
US11/936,769 US7598099B2 (en) 2007-11-07 2007-11-07 Method of controlling a fabrication process using an iso-dense bias
US11/936,759 US7639370B2 (en) 2007-11-07 2007-11-07 Apparatus for deriving an iso-dense bias
US11/936,759 2007-11-07

Publications (2)

Publication Number Publication Date
WO2009060319A2 WO2009060319A2 (en) 2009-05-14
WO2009060319A3 true WO2009060319A3 (en) 2009-09-24

Family

ID=40626271

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2008/003804 WO2009060319A2 (en) 2007-11-07 2008-10-30 Method and apparatus for deriving an iso-dense bias and controlling a fabrication process

Country Status (3)

Country Link
KR (1) KR101483325B1 (en)
CN (1) CN101855715A (en)
WO (1) WO2009060319A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9490182B2 (en) * 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
CN105004286B (en) * 2015-05-19 2017-12-22 哈尔滨工业大学 A kind of ultra-precise cutting finished surface three-dimensional micro-morphology measuring method based on laser beam diffraction hot spot characteristic
KR102550690B1 (en) 2018-05-28 2023-07-04 삼성디스플레이 주식회사 Ellipsometer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020033954A1 (en) * 2000-01-26 2002-03-21 Xinhui Niu Caching of intra-layer calculations for rapid rigorous coupled-wave analyses
WO2002023231A2 (en) * 2000-09-15 2002-03-21 Timbre Technologies, Inc. Generation of a library of periodic grating diffraction signals
US20030028358A1 (en) * 2001-08-06 2003-02-06 Xinhui Niu Method and system of dynamic learning through a regression-based library generation process
US20030232253A1 (en) * 2002-06-18 2003-12-18 Pierre Leroux Techniques to characterize iso-dense effects for microdevice manufacture
US20060064193A1 (en) * 2004-09-20 2006-03-23 Tokyo Electron Limited Iso/nested cascading trim control with model feedback updates

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6063531A (en) * 1998-10-06 2000-05-16 Advanced Micro Devices, Inc. Focus monitor structure and method for lithography process
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020033954A1 (en) * 2000-01-26 2002-03-21 Xinhui Niu Caching of intra-layer calculations for rapid rigorous coupled-wave analyses
WO2002023231A2 (en) * 2000-09-15 2002-03-21 Timbre Technologies, Inc. Generation of a library of periodic grating diffraction signals
US20030028358A1 (en) * 2001-08-06 2003-02-06 Xinhui Niu Method and system of dynamic learning through a regression-based library generation process
US20030232253A1 (en) * 2002-06-18 2003-12-18 Pierre Leroux Techniques to characterize iso-dense effects for microdevice manufacture
US20060064193A1 (en) * 2004-09-20 2006-03-23 Tokyo Electron Limited Iso/nested cascading trim control with model feedback updates

Also Published As

Publication number Publication date
KR20100091987A (en) 2010-08-19
CN101855715A (en) 2010-10-06
KR101483325B1 (en) 2015-01-15
WO2009060319A2 (en) 2009-05-14

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