WO2009060319A3 - Method and apparatus for deriving an iso-dense bias and controlling a fabrication process - Google Patents
Method and apparatus for deriving an iso-dense bias and controlling a fabrication process Download PDFInfo
- Publication number
- WO2009060319A3 WO2009060319A3 PCT/IB2008/003804 IB2008003804W WO2009060319A3 WO 2009060319 A3 WO2009060319 A3 WO 2009060319A3 IB 2008003804 W IB2008003804 W IB 2008003804W WO 2009060319 A3 WO2009060319 A3 WO 2009060319A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- iso
- controlling
- fabrication process
- deriving
- dense bias
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
- G01N2021/213—Spectrometric ellipsometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Immunology (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Micromachines (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Embodiments of controlling a fabrication process using an iso-dense bias are generally described herein. Other embodiments may be described and claimed.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200880115157A CN101855715A (en) | 2007-11-07 | 2008-10-30 | Method and apparatus for deriving an iso-dense bias and controlling a fabrication process |
KR1020107011378A KR101483325B1 (en) | 2007-11-07 | 2008-10-30 | Method and apparatus for deriving an iso-dense bias and controlling a fabrication process |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/936,747 | 2007-11-07 | ||
US11/936,769 | 2007-11-07 | ||
US11/936,759 US7639370B2 (en) | 2007-11-07 | 2007-11-07 | Apparatus for deriving an iso-dense bias |
US11/936,759 | 2007-11-07 | ||
US11/936,769 US7598099B2 (en) | 2007-11-07 | 2007-11-07 | Method of controlling a fabrication process using an iso-dense bias |
US11/936,747 US20090116040A1 (en) | 2007-11-07 | 2007-11-07 | Method of Deriving an Iso-Dense Bias Using a Hybrid Grating Layer |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009060319A2 WO2009060319A2 (en) | 2009-05-14 |
WO2009060319A3 true WO2009060319A3 (en) | 2009-09-24 |
Family
ID=40626271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2008/003804 WO2009060319A2 (en) | 2007-11-07 | 2008-10-30 | Method and apparatus for deriving an iso-dense bias and controlling a fabrication process |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101483325B1 (en) |
CN (1) | CN101855715A (en) |
WO (1) | WO2009060319A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9490182B2 (en) * | 2013-12-23 | 2016-11-08 | Kla-Tencor Corporation | Measurement of multiple patterning parameters |
CN105004286B (en) * | 2015-05-19 | 2017-12-22 | 哈尔滨工业大学 | A kind of ultra-precise cutting finished surface three-dimensional micro-morphology measuring method based on laser beam diffraction hot spot characteristic |
KR102550690B1 (en) | 2018-05-28 | 2023-07-04 | 삼성디스플레이 주식회사 | Ellipsometer |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020033954A1 (en) * | 2000-01-26 | 2002-03-21 | Xinhui Niu | Caching of intra-layer calculations for rapid rigorous coupled-wave analyses |
WO2002023231A2 (en) * | 2000-09-15 | 2002-03-21 | Timbre Technologies, Inc. | Generation of a library of periodic grating diffraction signals |
US20030028358A1 (en) * | 2001-08-06 | 2003-02-06 | Xinhui Niu | Method and system of dynamic learning through a regression-based library generation process |
US20030232253A1 (en) * | 2002-06-18 | 2003-12-18 | Pierre Leroux | Techniques to characterize iso-dense effects for microdevice manufacture |
US20060064193A1 (en) * | 2004-09-20 | 2006-03-23 | Tokyo Electron Limited | Iso/nested cascading trim control with model feedback updates |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6063531A (en) * | 1998-10-06 | 2000-05-16 | Advanced Micro Devices, Inc. | Focus monitor structure and method for lithography process |
US6433878B1 (en) * | 2001-01-29 | 2002-08-13 | Timbre Technology, Inc. | Method and apparatus for the determination of mask rules using scatterometry |
-
2008
- 2008-10-30 CN CN200880115157A patent/CN101855715A/en active Pending
- 2008-10-30 WO PCT/IB2008/003804 patent/WO2009060319A2/en active Application Filing
- 2008-10-30 KR KR1020107011378A patent/KR101483325B1/en not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020033954A1 (en) * | 2000-01-26 | 2002-03-21 | Xinhui Niu | Caching of intra-layer calculations for rapid rigorous coupled-wave analyses |
WO2002023231A2 (en) * | 2000-09-15 | 2002-03-21 | Timbre Technologies, Inc. | Generation of a library of periodic grating diffraction signals |
US20030028358A1 (en) * | 2001-08-06 | 2003-02-06 | Xinhui Niu | Method and system of dynamic learning through a regression-based library generation process |
US20030232253A1 (en) * | 2002-06-18 | 2003-12-18 | Pierre Leroux | Techniques to characterize iso-dense effects for microdevice manufacture |
US20060064193A1 (en) * | 2004-09-20 | 2006-03-23 | Tokyo Electron Limited | Iso/nested cascading trim control with model feedback updates |
Also Published As
Publication number | Publication date |
---|---|
WO2009060319A2 (en) | 2009-05-14 |
KR20100091987A (en) | 2010-08-19 |
CN101855715A (en) | 2010-10-06 |
KR101483325B1 (en) | 2015-01-15 |
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