WO2009060190A3 - Configurable electronic device and method - Google Patents

Configurable electronic device and method Download PDF

Info

Publication number
WO2009060190A3
WO2009060190A3 PCT/GB2008/003735 GB2008003735W WO2009060190A3 WO 2009060190 A3 WO2009060190 A3 WO 2009060190A3 GB 2008003735 W GB2008003735 W GB 2008003735W WO 2009060190 A3 WO2009060190 A3 WO 2009060190A3
Authority
WO
WIPO (PCT)
Prior art keywords
gate
common
secondary transistors
electrode
primary transistor
Prior art date
Application number
PCT/GB2008/003735
Other languages
French (fr)
Other versions
WO2009060190A2 (en
Inventor
Peter Reid Wilson
Reuben Wilcock
Original Assignee
Univ Southampton
Peter Reid Wilson
Reuben Wilcock
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Southampton, Peter Reid Wilson, Reuben Wilcock filed Critical Univ Southampton
Priority to GB1009509.9A priority Critical patent/GB2468078B/en
Publication of WO2009060190A2 publication Critical patent/WO2009060190A2/en
Publication of WO2009060190A3 publication Critical patent/WO2009060190A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K39/00—Medicinal preparations containing antigens or antibodies
    • A61K39/395—Antibodies; Immunoglobulins; Immune serum, e.g. antilymphocytic serum
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07K—PEPTIDES
    • C07K16/00—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies
    • C07K16/18—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies against material from animals or humans
    • C07K16/28—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies against material from animals or humans against receptors, cell surface antigens or cell surface determinants
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07K—PEPTIDES
    • C07K16/00—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies
    • C07K16/18—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies against material from animals or humans
    • C07K16/28—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies against material from animals or humans against receptors, cell surface antigens or cell surface determinants
    • C07K16/2875—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies against material from animals or humans against receptors, cell surface antigens or cell surface determinants against the NGF/TNF superfamily, e.g. CD70, CD95L, CD153, CD154
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12N—MICROORGANISMS OR ENZYMES; COMPOSITIONS THEREOF; PROPAGATING, PRESERVING, OR MAINTAINING MICROORGANISMS; MUTATION OR GENETIC ENGINEERING; CULTURE MEDIA
    • C12N15/00—Mutation or genetic engineering; DNA or RNA concerning genetic engineering, vectors, e.g. plasmids, or their isolation, preparation or purification; Use of hosts therefor
    • C12N15/09—Recombinant DNA-technology
    • C12N15/63—Introduction of foreign genetic material using vectors; Vectors; Use of hosts therefor; Regulation of expression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions

Abstract

A configurable transistor device (1, 3) comprising a primary transistor (5) and at least one secondary transistors (7, 9, 11), said primary transistor and said secondary transistors having their drain electrodes connected to a common drain electrode (D) and their source electrodes connected to a common source electrode (S), said primary transistor having its gate electrode connected to a common gate electrode (G) and each of said secondary transistors having their gate electrodes switchably (Bl, B2, B3) connected to said common gate electrode (G), the gate widths of said secondary transistors being shorter than the gate width of said primary transistor.
PCT/GB2008/003735 2007-11-06 2008-11-06 Configurable electronic device and method WO2009060190A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1009509.9A GB2468078B (en) 2007-11-06 2008-11-06 Configurable electronic device and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0721752A GB0721752D0 (en) 2007-11-06 2007-11-06 Configurable electronic device and method
GB0721752.4 2007-11-06

Publications (2)

Publication Number Publication Date
WO2009060190A2 WO2009060190A2 (en) 2009-05-14
WO2009060190A3 true WO2009060190A3 (en) 2009-06-25

Family

ID=38858209

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2008/003735 WO2009060190A2 (en) 2007-11-06 2008-11-06 Configurable electronic device and method

Country Status (2)

Country Link
GB (2) GB0721752D0 (en)
WO (1) WO2009060190A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201119099D0 (en) 2011-11-04 2011-12-21 Univ York Field-programmable gate array
CN117081025A (en) * 2023-10-12 2023-11-17 芯耀辉科技有限公司 Power clamp protection circuit and chip

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3627681A1 (en) * 1985-08-14 1987-02-26 Hitachi Ltd OUTPUT SWITCHING
US5874764A (en) * 1995-04-27 1999-02-23 International Business Machines Corporation Modular MOSFETS for high aspect ratio applications
US6021071A (en) * 1997-12-22 2000-02-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US20020034103A1 (en) * 2000-09-18 2002-03-21 Nobuaki Otsuka Semiconductor device with impedance controllable output buffer
US20030122574A1 (en) * 2001-12-27 2003-07-03 Kabushiki Kaisha Toshiba Output buffer circuit, memory chip, and semiconductor device having a circuit for controlling buffer size
US20060033532A1 (en) * 2004-08-11 2006-02-16 Altera Corporation Techniques for trimming drive current in output drivers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0006398D0 (en) * 2000-03-16 2000-05-03 Novartis Ag Organic compounds
AU2001287040A1 (en) * 2000-09-01 2002-03-13 Biogen, Inc. Methods of designing and producing novel compounds having improved binding affinity for cd154 or other trimeric proteins
AU8867501A (en) * 2000-09-01 2002-03-13 Biogen Inc Co-crystal structure of monoclonal antibody 5c8 and cd154, and use thereof in drug design
JP4603894B2 (en) * 2002-12-03 2010-12-22 ユセベ ファルマ ソシエテ アノニム Assays to identify antibody producing cells
DE602004029252D1 (en) * 2003-06-13 2010-11-04 Biogen Idec Inc AGLYCOSYL-ANTI-CD154 (CD40-LIGAND) ANTIBODIES AND THEIR USES
PT1639011E (en) * 2003-06-30 2009-01-20 Domantis Ltd Pegylated single domain antibodies (dab)
CA2533593A1 (en) * 2003-07-26 2005-02-10 Biogen Idec Ma Inc. Altered antibodies having improved antigen-binding affinity

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3627681A1 (en) * 1985-08-14 1987-02-26 Hitachi Ltd OUTPUT SWITCHING
US5874764A (en) * 1995-04-27 1999-02-23 International Business Machines Corporation Modular MOSFETS for high aspect ratio applications
US6021071A (en) * 1997-12-22 2000-02-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US20020034103A1 (en) * 2000-09-18 2002-03-21 Nobuaki Otsuka Semiconductor device with impedance controllable output buffer
US20030122574A1 (en) * 2001-12-27 2003-07-03 Kabushiki Kaisha Toshiba Output buffer circuit, memory chip, and semiconductor device having a circuit for controlling buffer size
US20060033532A1 (en) * 2004-08-11 2006-02-16 Altera Corporation Techniques for trimming drive current in output drivers

Also Published As

Publication number Publication date
WO2009060190A2 (en) 2009-05-14
GB201009509D0 (en) 2010-07-21
GB2468078B (en) 2013-02-20
GB2468078A (en) 2010-08-25
GB0721752D0 (en) 2007-12-19
GB2468078A8 (en) 2011-12-14

Similar Documents

Publication Publication Date Title
GB2453492A (en) Organic el device and manufacturing method thereof
WO2012119125A3 (en) High performance graphene transistors and fabrication processes thereof
TWI319234B (en) Source/drain electrodes, transistor substrates and manufacture methods thereof, and display devices
WO2007057357A3 (en) Semiconductor devices having complementary multiple-gate transistors with different gate dielectrics and methods of manufacture thereof
EP2400533A3 (en) Diamond field effect transistor and process for producing the same
TW201614803A (en) Device having multiple transistors and method for fabricating the same
TW200802852A (en) Gate electrode structures and methods of manufacture
WO2011123332A3 (en) Dual gate ldmos device with reduced capacitance
WO2009012276A3 (en) Asymmetric field effect transistor structure and method
GB0816666D0 (en) Semiconductor field effect transistor and method for fabricating the same
EP2437304A3 (en) High-voltage vertical FET
WO2010030493A3 (en) Transistor with a passive gate and methods of fabricating the same
EP2565877A4 (en) Shift register and display device
FR2891664B1 (en) VERTICAL MOS TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
WO2009136095A3 (en) Method for making complementary p and n mosfet transistors, electronic device including such transistors, and processor including at least one such device
WO2008076822A3 (en) Adaptive bias technique for field effect transistor
WO2012058281A3 (en) Hybrid active-field gap extended drain mos transistor
TWI373135B (en) Field effect transistor with mixed-crystal-orientation channel and source/drain regions
WO2011087604A3 (en) Dual work function gate structures
WO2009091840A3 (en) Power transistor with protected channel
SG165354A1 (en) Integrated circuit system employing stress memorization transfer
DE602005001245D1 (en) MOS transistor with deformable gate
TW200617499A (en) Pixel structure, panel and display device utilizing the same
EP2824836A3 (en) Cascode switch device
JP2006189851A5 (en)

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08847600

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 1009509

Country of ref document: GB

Kind code of ref document: A

Free format text: PCT FILING DATE = 20081106

WWE Wipo information: entry into national phase

Ref document number: 1009509.9

Country of ref document: GB

122 Ep: pct application non-entry in european phase

Ref document number: 08847600

Country of ref document: EP

Kind code of ref document: A2