WO2009052544A1 - Dispositif d'implantation d'ions - Google Patents

Dispositif d'implantation d'ions Download PDF

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Publication number
WO2009052544A1
WO2009052544A1 PCT/AU2007/001709 AU2007001709W WO2009052544A1 WO 2009052544 A1 WO2009052544 A1 WO 2009052544A1 AU 2007001709 W AU2007001709 W AU 2007001709W WO 2009052544 A1 WO2009052544 A1 WO 2009052544A1
Authority
WO
WIPO (PCT)
Prior art keywords
filament
gas
anode
magnetron
way
Prior art date
Application number
PCT/AU2007/001709
Other languages
English (en)
Inventor
Steven Arnold Sesselmann
John Hendron
Original Assignee
Steven Arnold Sesselmann
John Hendron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steven Arnold Sesselmann, John Hendron filed Critical Steven Arnold Sesselmann
Priority to PCT/AU2007/001709 priority Critical patent/WO2009052544A1/fr
Publication of WO2009052544A1 publication Critical patent/WO2009052544A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H01J2237/062—Reducing size of gun
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/082—Electron beam

Definitions

  • the magnetron filament cathode being electrically heated and negatively biased compared to the annular anode, will during operation emit a planar stream of electrons outwards from the filament and towards the inside of the annular anode.
  • the gas to be ionized may then be fed directly into the filament, where the gas will first be heated, before entering the ion chamber through the said planar stream of electrons, the consequent collisions between the gas molecules and the streaming electrons, will result in a high proportion of the gas molecules becoming ionized.
  • the ionized gas molecules may consequently be accelerated or guided by way of electric potential fields.
  • This invention relates to an ion implantation device, which can be manufactured with one of several standard vacuum flanges, in order that it may easily be fitted to existing vacuum chambers, where the implantation of gaseous ions are required.
  • this device utilizes a commonly available microwave magnetron filament to heat and ionize the gas.
  • the utilisation of a common microwave magnetron filament results in a highly effective device and significantly reduces the cost.
  • the effectiveness of the novel design results from the way that the gas to be ionized is guided through the heated filament and injected directly into a powerful planar stream of electrons. Description of Drawings
  • Standard vacuum flange clamps are required, and have been omitted from the diagram.
  • the Starfire ion implantation device may be used wherever high flow rates of ionized gas is required, processes such as ion etching, ion cutting, ion implantation into particle accelerators or ion injection into electrostatic or magnetic confinement fusion reactors.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

L'invention porte sur un nouveau dispositif et une nouvelle méthode d'ionisation et d'implantation de molécules de gaz dans un système à vide comprenant une cathode à filament chaud. La cathode est nichée dans une anode annulaire et ledit filament est chauffé par un courant à basse tension, et polarisé négativement par rapport à l'anode par un potentiel à haute tension. En fonctionnement, le dispositif crée un courant régulier plane d'électrons allant de la cathode à l'anode. Le gaz à ioniser passe sur ledit filament où ses molécules sont d'abord chauffées puis dépouillées d'un ou plusieurs de leurs électrons.
PCT/AU2007/001709 2007-10-26 2007-10-26 Dispositif d'implantation d'ions WO2009052544A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/AU2007/001709 WO2009052544A1 (fr) 2007-10-26 2007-10-26 Dispositif d'implantation d'ions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/AU2007/001709 WO2009052544A1 (fr) 2007-10-26 2007-10-26 Dispositif d'implantation d'ions

Publications (1)

Publication Number Publication Date
WO2009052544A1 true WO2009052544A1 (fr) 2009-04-30

Family

ID=40578944

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/AU2007/001709 WO2009052544A1 (fr) 2007-10-26 2007-10-26 Dispositif d'implantation d'ions

Country Status (1)

Country Link
WO (1) WO2009052544A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350905A (en) * 1991-11-20 1994-09-27 Goldstar Co., Ltd. Magnetron for a microwave oven
US6350356B1 (en) * 1997-11-26 2002-02-26 Vapor Technologies, Inc. Linear magnetron arc evaporation or sputtering source
US20070114435A1 (en) * 2005-10-07 2007-05-24 Kwon Ui-Hui Filament member, ion source, and ion implantation apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350905A (en) * 1991-11-20 1994-09-27 Goldstar Co., Ltd. Magnetron for a microwave oven
US6350356B1 (en) * 1997-11-26 2002-02-26 Vapor Technologies, Inc. Linear magnetron arc evaporation or sputtering source
US20070114435A1 (en) * 2005-10-07 2007-05-24 Kwon Ui-Hui Filament member, ion source, and ion implantation apparatus

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