WO2009050641A3 - Voltage surge protection circuit - Google Patents

Voltage surge protection circuit Download PDF

Info

Publication number
WO2009050641A3
WO2009050641A3 PCT/IB2008/054209 IB2008054209W WO2009050641A3 WO 2009050641 A3 WO2009050641 A3 WO 2009050641A3 IB 2008054209 W IB2008054209 W IB 2008054209W WO 2009050641 A3 WO2009050641 A3 WO 2009050641A3
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
sensor
detection signal
supply rail
protection circuit
Prior art date
Application number
PCT/IB2008/054209
Other languages
French (fr)
Other versions
WO2009050641A2 (en
Inventor
Denis Crespo
Herve Marie
Nguyen Trieu Luan Le
Mickael Lucas
Original Assignee
Nxp Bv
Denis Crespo
Herve Marie
Nguyen Trieu Luan Le
Mickael Lucas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv, Denis Crespo, Herve Marie, Nguyen Trieu Luan Le, Mickael Lucas filed Critical Nxp Bv
Priority to US12/682,746 priority Critical patent/US8804289B2/en
Priority to EP08840779.6A priority patent/EP2212912B1/en
Publication of WO2009050641A2 publication Critical patent/WO2009050641A2/en
Publication of WO2009050641A3 publication Critical patent/WO2009050641A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A protection circuit (100, 700) is disclosed for protecting an integrated circuit having a first supply rail (Vcc) and a second supply rail (Vss) from exposure to an excessive voltage. The protection circuit (100, 700) comprises a sensor (120) for sensing a voltage increase on the first supply rail (Vcc). Such a sensor may be implemented as an RC element. The sensor (120) has an output coupled to a signal path for providing a detection signal on said path. The sensor (120) triggers a clamping circuit (180) to clamp the first supply rail (Vcc) to the second supply rail (Vss) in response to the detection signal, which typically signals an ESD event on the supply rails. A pre-amplifying stage (160) is coupled between the sensor (120) and the clamping circuit (180) to amplify the detection signal for the clamping circuit (180). The protection circuit further comprises a hold circuit (140) for holding the control input of the pre-amplifying stage (160) in an enabled state upon termination of the detection signal. Such a hold circuit may comprise a further RC element for accelerating the activation of the clamping circuit (180) and extending the activation of the clamping circuit beyond the termination of the detection signal, thus yielding a more efficient protection circuit (100, 700).
PCT/IB2008/054209 2007-10-17 2008-10-13 Voltage surge protection circuit WO2009050641A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/682,746 US8804289B2 (en) 2007-10-17 2008-10-13 Voltage surge protection circuit
EP08840779.6A EP2212912B1 (en) 2007-10-17 2008-10-13 Voltage surge protection circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07118671.2 2007-10-17
EP07118671 2007-10-17

Publications (2)

Publication Number Publication Date
WO2009050641A2 WO2009050641A2 (en) 2009-04-23
WO2009050641A3 true WO2009050641A3 (en) 2009-06-11

Family

ID=40260660

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2008/054209 WO2009050641A2 (en) 2007-10-17 2008-10-13 Voltage surge protection circuit

Country Status (3)

Country Link
US (1) US8804289B2 (en)
EP (1) EP2212912B1 (en)
WO (1) WO2009050641A2 (en)

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US8015518B2 (en) * 2007-12-18 2011-09-06 International Business Machines Corporation Structures for electrostatic discharge protection for bipolar semiconductor circuitry
JP5595751B2 (en) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 ESD protection element
US8320091B2 (en) 2010-03-25 2012-11-27 Analog Devices, Inc. Apparatus and method for electronic circuit protection
US8422187B2 (en) * 2010-07-02 2013-04-16 Analog Devices, Inc. Apparatus and method for electronic circuit protection
US20130154601A1 (en) * 2011-12-20 2013-06-20 Kenneth P. Snowdon Regulator transient over-voltage protection
US9548738B2 (en) 2012-02-21 2017-01-17 Xilinx, Inc. High voltage RC-clamp for electrostatic discharge (ESD) protection
US8958187B2 (en) 2012-11-09 2015-02-17 Analog Devices, Inc. Active detection and protection of sensitive circuits against transient electrical stress events
US9013845B1 (en) * 2013-03-04 2015-04-21 Xilinx, Inc. High voltage RC-clamp for electrostatic discharge (ESD) protection
US9293912B2 (en) 2013-09-11 2016-03-22 Analog Devices, Inc. High voltage tolerant supply clamp
US10026729B2 (en) * 2014-03-12 2018-07-17 Mediatek Inc. Surge-protection circuit and surge-protection method
US9634482B2 (en) 2014-07-18 2017-04-25 Analog Devices, Inc. Apparatus and methods for transient overstress protection with active feedback
JP2016162884A (en) 2015-03-02 2016-09-05 株式会社東芝 Electrostatic protection circuit
US10199369B2 (en) 2016-03-04 2019-02-05 Analog Devices, Inc. Apparatus and methods for actively-controlled transient overstress protection with false condition shutdown
US10177566B2 (en) 2016-06-21 2019-01-08 Analog Devices, Inc. Apparatus and methods for actively-controlled trigger and latch release thyristor
US10734806B2 (en) 2016-07-21 2020-08-04 Analog Devices, Inc. High voltage clamps with transient activation and activation release control
US10861845B2 (en) 2016-12-06 2020-12-08 Analog Devices, Inc. Active interface resistance modulation switch
CN108091061B (en) * 2017-12-28 2023-08-18 金卡智能集团股份有限公司 IC card detection circuit for metering device
CN109449911B (en) * 2018-12-26 2023-11-28 上海艾为电子技术股份有限公司 Protection circuit
US11387648B2 (en) 2019-01-10 2022-07-12 Analog Devices International Unlimited Company Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces
CN113541116B (en) * 2021-08-03 2023-11-10 北京控制工程研究所 Voltage clamping circuit and system based on power MOS
US11605626B2 (en) * 2021-08-12 2023-03-14 Nxp B.V. ESD circuit with current leakage compensation

Citations (3)

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Publication number Priority date Publication date Assignee Title
US5946177A (en) * 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
US20040109270A1 (en) * 2002-12-10 2004-06-10 Michael Stockinger Transient detection circuit
US20070076338A1 (en) * 2005-09-30 2007-04-05 Renesas Technology America, Inc. Electrostatic discharge device with variable on time

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US5530612A (en) 1994-03-28 1996-06-25 Intel Corporation Electrostatic discharge protection circuits using biased and terminated PNP transistor chains
US5528188A (en) 1995-03-13 1996-06-18 International Business Machines Corporation Electrostatic discharge suppression circuit employing low-voltage triggering silicon-controlled rectifier
EP0740344B1 (en) * 1995-04-24 2002-07-24 Conexant Systems, Inc. Method and apparatus for coupling multiple independent on-chip Vdd busses to an ESD core clamp
US5631793A (en) 1995-09-05 1997-05-20 Winbond Electronics Corporation Capacitor-couple electrostatic discharge protection circuit
US5825217A (en) * 1996-05-29 1998-10-20 Amir Lehavot Low power accelerated switching for MOS circuits
US5708549A (en) * 1996-10-04 1998-01-13 Harris Corporation Integrated circuit having enhanced transient voltage protection and associated methods
US5903419A (en) 1997-09-29 1999-05-11 Motorola, Inc. Circuit for electrostatic discharge (ESD) protection
US6323851B1 (en) * 1997-09-30 2001-11-27 Casio Computer Co., Ltd. Circuit and method for driving display device
US6671153B1 (en) 2000-09-11 2003-12-30 Taiwan Semiconductor Manufacturing Company Low-leakage diode string for use in the power-rail ESD clamp circuits
TW488056B (en) 2001-04-24 2002-05-21 Vanguard Int Semiconduct Corp Two-staged ESD protection circuit with accelerated conduction of the secondary stage
US7092227B2 (en) 2002-08-29 2006-08-15 Industrial Technology Research Institute Electrostatic discharge protection circuit with active device
US6965503B2 (en) * 2003-09-30 2005-11-15 International Business Machines Corporation Electro-static discharge protection circuit
US6963112B2 (en) * 2004-01-09 2005-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Electrostatic discharge protection circuit with a diode string
US7002216B2 (en) 2004-06-08 2006-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. ESD performance using separate diode groups
DE102004043858A1 (en) * 2004-09-10 2006-03-16 Infineon Technologies Ag Method for producing a memory cell, a memory cell arrangement and memory cell arrangement

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5946177A (en) * 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
US20040109270A1 (en) * 2002-12-10 2004-06-10 Michael Stockinger Transient detection circuit
US20070076338A1 (en) * 2005-09-30 2007-04-05 Renesas Technology America, Inc. Electrostatic discharge device with variable on time

Also Published As

Publication number Publication date
US8804289B2 (en) 2014-08-12
US20100214706A1 (en) 2010-08-26
EP2212912A2 (en) 2010-08-04
WO2009050641A2 (en) 2009-04-23
EP2212912B1 (en) 2014-03-19

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