WO2009047901A1 - Planar light-emitting laser - Google Patents

Planar light-emitting laser Download PDF

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Publication number
WO2009047901A1
WO2009047901A1 PCT/JP2008/002854 JP2008002854W WO2009047901A1 WO 2009047901 A1 WO2009047901 A1 WO 2009047901A1 JP 2008002854 W JP2008002854 W JP 2008002854W WO 2009047901 A1 WO2009047901 A1 WO 2009047901A1
Authority
WO
WIPO (PCT)
Prior art keywords
refractive
index layer
side dbr
emitting laser
optical resonator
Prior art date
Application number
PCT/JP2008/002854
Other languages
French (fr)
Japanese (ja)
Inventor
Takayoshi Anan
Naofumi Suzuki
Kenichiro Yashiki
Masayoshi Tsuji
Hiroshi Hatakeyama
Kimiyoshi Fukatsu
Takeshi Akagawa
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009536924A priority Critical patent/JP5392087B2/en
Publication of WO2009047901A1 publication Critical patent/WO2009047901A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A planar light-emitting laser includes an n-side DBR (11) and a p-side DBR (13) each of which has a different conductivity type, and a λ/2 optical resonator section (12) which is interposed between those DBRs and has an optical resonator wavelength equivalent to nearly half of the oscillation wavelength (λ), wherein each of λ/4 layers on the n-side DBR (11) and the p-side DBR (13) is comprised of a high-refractive-index layer (112) and a high-refractive-index layer (132), and an active layer (121) is arranged at the center of the λ/2 optical resonator section (12). A low-refractive-index layer (122A) provided between the active layer (121) and the high-refractive-index layer (112) as well as a low-refractive-index layer (122B) provided between the active layer (121) and the high-refractive-index layer (132) is formed of different semiconductor material base, and both of ΔEc14 and ΔEv15 are 200meV or less.
PCT/JP2008/002854 2007-10-11 2008-10-09 Planar light-emitting laser WO2009047901A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009536924A JP5392087B2 (en) 2007-10-11 2008-10-09 Surface emitting laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007265512 2007-10-11
JP2007-265512 2007-10-11

Publications (1)

Publication Number Publication Date
WO2009047901A1 true WO2009047901A1 (en) 2009-04-16

Family

ID=40549053

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002854 WO2009047901A1 (en) 2007-10-11 2008-10-09 Planar light-emitting laser

Country Status (2)

Country Link
JP (1) JP5392087B2 (en)
WO (1) WO2009047901A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019187809A1 (en) * 2018-03-28 2019-10-03 ソニー株式会社 Vertical cavity surface emitting laser element and electronic device
WO2023175482A1 (en) * 2022-03-18 2023-09-21 Ricoh Company, Ltd. Surface emitting laser, projection apparatus, head-up display, moving body, head-mounted display, and optometry apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211346A (en) * 1991-01-21 1993-08-20 Nippon Telegr & Teleph Corp <Ntt> Surface light emitting element
JPH05283791A (en) * 1992-03-31 1993-10-29 Hitachi Ltd Surface emission type semiconductor laser
JPH05291682A (en) * 1992-04-09 1993-11-05 Toshiba Corp Surface emission type light emitting device
JP2006332623A (en) * 2005-04-27 2006-12-07 Matsushita Electric Ind Co Ltd Semiconductor laser apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211346A (en) * 1991-01-21 1993-08-20 Nippon Telegr & Teleph Corp <Ntt> Surface light emitting element
JPH05283791A (en) * 1992-03-31 1993-10-29 Hitachi Ltd Surface emission type semiconductor laser
JPH05291682A (en) * 1992-04-09 1993-11-05 Toshiba Corp Surface emission type light emitting device
JP2006332623A (en) * 2005-04-27 2006-12-07 Matsushita Electric Ind Co Ltd Semiconductor laser apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019187809A1 (en) * 2018-03-28 2019-10-03 ソニー株式会社 Vertical cavity surface emitting laser element and electronic device
JPWO2019187809A1 (en) * 2018-03-28 2021-03-18 ソニー株式会社 Vertical cavity type surface emitting laser element and electronic equipment
JP7334727B2 (en) 2018-03-28 2023-08-29 ソニーグループ株式会社 Vertical cavity surface emitting laser device and electronic device
US11973316B2 (en) 2018-03-28 2024-04-30 Sony Corporation Vertical cavity surface emitting laser element and electronic apparatus
WO2023175482A1 (en) * 2022-03-18 2023-09-21 Ricoh Company, Ltd. Surface emitting laser, projection apparatus, head-up display, moving body, head-mounted display, and optometry apparatus

Also Published As

Publication number Publication date
JPWO2009047901A1 (en) 2011-02-17
JP5392087B2 (en) 2014-01-22

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