WO2009044666A1 - Radiation-sensitive composition - Google Patents

Radiation-sensitive composition Download PDF

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Publication number
WO2009044666A1
WO2009044666A1 PCT/JP2008/067389 JP2008067389W WO2009044666A1 WO 2009044666 A1 WO2009044666 A1 WO 2009044666A1 JP 2008067389 W JP2008067389 W JP 2008067389W WO 2009044666 A1 WO2009044666 A1 WO 2009044666A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
sensitive composition
repeating unit
represented
general formula
Prior art date
Application number
PCT/JP2008/067389
Other languages
French (fr)
Japanese (ja)
Inventor
Yukio Nishimura
Yuusuke Asano
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to JP2009536024A priority Critical patent/JP5077353B2/en
Publication of WO2009044666A1 publication Critical patent/WO2009044666A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)

Abstract

Disclosed is a radiation-sensitive composition containing a polymer (A) having a repeating unit (1) represented by the general formula (1-1) below, a repeating unit (2) represented by the general formula (1-2) below and a repeating unit (3) having an acid-cleavable group, and a radiation-sensitive acid generator (B).
PCT/JP2008/067389 2007-10-01 2008-09-26 Radiation-sensitive composition WO2009044666A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009536024A JP5077353B2 (en) 2007-10-01 2008-09-26 Radiation sensitive composition

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-257633 2007-10-01
JP2007257633 2007-10-01
JP2007334726 2007-12-26
JP2007-334726 2007-12-26

Publications (1)

Publication Number Publication Date
WO2009044666A1 true WO2009044666A1 (en) 2009-04-09

Family

ID=40526095

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067389 WO2009044666A1 (en) 2007-10-01 2008-09-26 Radiation-sensitive composition

Country Status (3)

Country Link
JP (1) JP5077353B2 (en)
TW (1) TW200923579A (en)
WO (1) WO2009044666A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011108665A1 (en) * 2010-03-04 2011-09-09 Jsr株式会社 Radiation-sensitive resin composition and resist pattern formation method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111747966A (en) * 2020-06-16 2020-10-09 徐州博康信息化学品有限公司 Trifluoro sulfonamide 2-oxabicyclo [2.2.1] heptane photoresist resin monomer and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003270787A (en) * 2002-03-15 2003-09-25 Jsr Corp Radiation sensitive resin composition
JP2003345025A (en) * 2002-05-28 2003-12-03 Everlight Usa Inc Chemically amplifying photoresist composition
JP2003342323A (en) * 2002-05-28 2003-12-03 Everlight Usa Inc Resin for chemically amplified photoresist composition
JP2005060638A (en) * 2003-08-20 2005-03-10 Mitsubishi Rayon Co Ltd Polymer, production method, resist composition and method for forming pattern
JP2006349940A (en) * 2005-06-15 2006-12-28 Tokyo Ohka Kogyo Co Ltd Positive resist composition and method of forming resist pattern

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003270787A (en) * 2002-03-15 2003-09-25 Jsr Corp Radiation sensitive resin composition
JP2003345025A (en) * 2002-05-28 2003-12-03 Everlight Usa Inc Chemically amplifying photoresist composition
JP2003342323A (en) * 2002-05-28 2003-12-03 Everlight Usa Inc Resin for chemically amplified photoresist composition
JP2005060638A (en) * 2003-08-20 2005-03-10 Mitsubishi Rayon Co Ltd Polymer, production method, resist composition and method for forming pattern
JP2006349940A (en) * 2005-06-15 2006-12-28 Tokyo Ohka Kogyo Co Ltd Positive resist composition and method of forming resist pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011108665A1 (en) * 2010-03-04 2011-09-09 Jsr株式会社 Radiation-sensitive resin composition and resist pattern formation method
JPWO2011108665A1 (en) * 2010-03-04 2013-06-27 Jsr株式会社 Radiation-sensitive resin composition and resist pattern forming method

Also Published As

Publication number Publication date
TW200923579A (en) 2009-06-01
JPWO2009044666A1 (en) 2011-02-03
JP5077353B2 (en) 2012-11-21

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