WO2009034831A1 - Ultraviolet sensor - Google Patents

Ultraviolet sensor Download PDF

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Publication number
WO2009034831A1
WO2009034831A1 PCT/JP2008/065147 JP2008065147W WO2009034831A1 WO 2009034831 A1 WO2009034831 A1 WO 2009034831A1 JP 2008065147 W JP2008065147 W JP 2008065147W WO 2009034831 A1 WO2009034831 A1 WO 2009034831A1
Authority
WO
WIPO (PCT)
Prior art keywords
ultraviolet
ultraviolet sensor
single crystal
type
crystal substrate
Prior art date
Application number
PCT/JP2008/065147
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuo Aoki
Takekazu Ujiie
Kiyoshi Shimamura
Encarnacion Antonia Garcia Villora
Original Assignee
Koha Co., Ltd.
National Institute For Materials Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koha Co., Ltd., National Institute For Materials Science filed Critical Koha Co., Ltd.
Publication of WO2009034831A1 publication Critical patent/WO2009034831A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

Provided is an ultraviolet sensor which has improved ultraviolet sensitivity and high versatility to be in widespread use, without increasing manufacturing cost. An ultraviolet sensor (1) is provided with an n-type ß-Ga2O3 single crystal substrate (2), and detection electrodes (3a, 3b) which detect a current or a voltage generated by having ultraviolet received and excited by the n-type ß-Ga2O3 single crystal substrate (2).
PCT/JP2008/065147 2007-09-12 2008-08-26 Ultraviolet sensor WO2009034831A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007236278A JP2009070950A (en) 2007-09-12 2007-09-12 Ultraviolet sensor
JP2007-236278 2007-09-12

Publications (1)

Publication Number Publication Date
WO2009034831A1 true WO2009034831A1 (en) 2009-03-19

Family

ID=40451842

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065147 WO2009034831A1 (en) 2007-09-12 2008-08-26 Ultraviolet sensor

Country Status (2)

Country Link
JP (1) JP2009070950A (en)
WO (1) WO2009034831A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013035465A1 (en) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Method for controlling concentration of donor in ga2o3-based single crystal
WO2014132970A1 (en) * 2013-03-01 2014-09-04 株式会社タムラ製作所 METHOD FOR CONTROLLING DONOR CONCENTRATION IN Ga2O3 SINGLE CRYSTAL BODY, AND METHOD FOR FORMING OHMIC CONTACT
WO2023190042A1 (en) * 2022-03-30 2023-10-05 国立大学法人東北大学 Layered film inspecton method and layered film production method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6046377B2 (en) 2011-08-09 2016-12-14 ローム株式会社 Photodetection element, photodetection device, and auto light device
JP5807282B2 (en) * 2011-09-08 2015-11-10 株式会社タムラ製作所 Ga2O3 semiconductor device
JP2014209538A (en) * 2013-03-27 2014-11-06 日本放送協会 Photoelectric conversion element and method for manufacturing the same
CN108767028B (en) * 2018-05-30 2021-10-15 陈谦 Flexible solar blind ultraviolet detector based on gallium oxide heterojunction structure and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526096A (en) * 1975-07-04 1977-01-18 Dainippon Toryo Co Ltd Photoconductive electric material and its manufacturing method
JP2004342857A (en) * 2003-05-15 2004-12-02 Univ Waseda Gallium oxide system light emitting element and manufacturing method therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526096A (en) * 1975-07-04 1977-01-18 Dainippon Toryo Co Ltd Photoconductive electric material and its manufacturing method
JP2004342857A (en) * 2003-05-15 2004-12-02 Univ Waseda Gallium oxide system light emitting element and manufacturing method therefor

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GARCIA VILLORA ET AL.: "Epitaxial growth of .BETA.-Ga2O3", ABSTRACTS OF SPRING MEETING OF JAPAN SOCIETY OF POWDER AND POWDER METALLURGY, 2004, SHUNKI, pages 54 *
TAKAHITO OSHIMA ET AL.: "Beta-Ga2O3 Kiban o Riyo shita Shinshigai Hikari Kenshutsuki", 55TH EXTENDED ABSTRACTS,JAPAN SOCIETY OF APPLIED PHYSICS AND RELATED SOCIETIES, vol. 3, 27 March 2008 (2008-03-27), pages 1491 *
YOSHIHIRO KOKUBUN ET AL.: "Sol-gel method ni yori Ga2O3 Tankessho Kibanjo e Sakusei shita beta-Ga2O3 Usumaku no Shigaisen Kenshutsu Tokusei", 68TH EXTENDED ABSTRACTS, THE JAPAN SOCIETY OF APPLIED PHYSICS, vol. 2, 4 September 2007 (2007-09-04), pages 666 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013035465A1 (en) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Method for controlling concentration of donor in ga2o3-based single crystal
EP2755231A1 (en) * 2011-09-08 2014-07-16 Tamura Corporation Method for controlling concentration of donor in ga2o3-based single crystal
US8951897B2 (en) 2011-09-08 2015-02-10 Tamura Corporation Method for controlling concentration of donor in GA2O3—based single crystal
JPWO2013035465A1 (en) * 2011-09-08 2015-03-23 株式会社タムラ製作所 Method for controlling donor concentration of Ga2O3-based single crystal
EP2755231A4 (en) * 2011-09-08 2015-04-08 Tamura Seisakusho Kk Method for controlling concentration of donor in ga2o3-based single crystal
US9202876B2 (en) 2011-09-08 2015-12-01 Tamura Corporation Method for controlling concentration of donor in GA2O3-based single crystal
CN106098756A (en) * 2011-09-08 2016-11-09 株式会社田村制作所 Ga2o3it it is the donor concentrations control method of monocrystal
WO2014132970A1 (en) * 2013-03-01 2014-09-04 株式会社タムラ製作所 METHOD FOR CONTROLLING DONOR CONCENTRATION IN Ga2O3 SINGLE CRYSTAL BODY, AND METHOD FOR FORMING OHMIC CONTACT
JP2015026796A (en) * 2013-03-01 2015-02-05 株式会社タムラ製作所 Method for controlling donor concentration of gallium oxide based monocrystalline material, and method for forming ohmic contact
US9611567B2 (en) 2013-03-01 2017-04-04 Tamura Corporation Method for controlling donor concentration in Ga2O3-based and method for forming ohmic contact
WO2023190042A1 (en) * 2022-03-30 2023-10-05 国立大学法人東北大学 Layered film inspecton method and layered film production method

Also Published As

Publication number Publication date
JP2009070950A (en) 2009-04-02

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