WO2009028706A1 - 縦型有機トランジスタ、その製造方法及び発光素子 - Google Patents

縦型有機トランジスタ、その製造方法及び発光素子 Download PDF

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Publication number
WO2009028706A1
WO2009028706A1 PCT/JP2008/065666 JP2008065666W WO2009028706A1 WO 2009028706 A1 WO2009028706 A1 WO 2009028706A1 JP 2008065666 W JP2008065666 W JP 2008065666W WO 2009028706 A1 WO2009028706 A1 WO 2009028706A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic transistor
vertical organic
light emitting
emitting element
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065666
Other languages
English (en)
French (fr)
Inventor
Shinya Fujimoto
Hiroki Maeda
Yoshiaki Tsuruoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008215068A external-priority patent/JP5347377B2/ja
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to GB1003387.6A priority Critical patent/GB2465122B/en
Priority to US12/675,830 priority patent/US8564130B2/en
Publication of WO2009028706A1 publication Critical patent/WO2009028706A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]

Landscapes

  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)

Abstract

　本発明は、電流変調が容易で、製造コストを抑えた縦型有機トランジスタ、及びその製造方法を提供する。本発明は、縦型有機トランジスタであって、上部電極と、下部電極と、両電極間に設けられた有機半導体と、該有機半導体内に設けられた中間電極とを備えてなり、前記中間電極が、連続する絶縁性金属化合物と、該絶縁性金属化合物内に分布する粒状金属とを含んでなる層状連続体であるものである。
PCT/JP2008/065666 2007-08-31 2008-09-01 縦型有機トランジスタ、その製造方法及び発光素子 Ceased WO2009028706A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB1003387.6A GB2465122B (en) 2007-08-31 2008-09-01 Laminated organic transistor, method for manufacturing the laminated organic transistor, and light emitting element
US12/675,830 US8564130B2 (en) 2007-08-31 2008-09-01 Vertical organic transistor, method for manufacturing the vertical organic transistor, and light emitting element

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-226664 2007-08-31
JP2007226664 2007-08-31
JP2008-215068 2008-08-25
JP2008215068A JP5347377B2 (ja) 2007-08-31 2008-08-25 縦型有機トランジスタ、その製造方法及び発光素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/506,516 Continuation US8357257B2 (en) 2007-09-21 2009-07-21 Magnetic sheet and production method thereof

Publications (1)

Publication Number Publication Date
WO2009028706A1 true WO2009028706A1 (ja) 2009-03-05

Family

ID=40387409

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065666 Ceased WO2009028706A1 (ja) 2007-08-31 2008-09-01 縦型有機トランジスタ、その製造方法及び発光素子

Country Status (1)

Country Link
WO (1) WO2009028706A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120146011A1 (en) * 2009-09-04 2012-06-14 Ken-Ichi Nakayama Current-Amplifying Transistor Device and Current-Amplifying, Light-Emitting Transistor Device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005293980A (ja) * 2004-03-31 2005-10-20 Junji Kido 発光トランジスタ
JP2006191044A (ja) * 2005-01-05 2006-07-20 Samsung Electronics Co Ltd 垂直型有機薄膜トランジスタ、垂直型有機発光トランジスタおよびディスプレイ素子
JP2006260206A (ja) * 2005-03-17 2006-09-28 Fujitsu Ltd 検索装置および検索プログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005293980A (ja) * 2004-03-31 2005-10-20 Junji Kido 発光トランジスタ
JP2006191044A (ja) * 2005-01-05 2006-07-20 Samsung Electronics Co Ltd 垂直型有機薄膜トランジスタ、垂直型有機発光トランジスタおよびディスプレイ素子
JP2006260206A (ja) * 2005-03-17 2006-09-28 Fujitsu Ltd 検索装置および検索プログラム

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120146011A1 (en) * 2009-09-04 2012-06-14 Ken-Ichi Nakayama Current-Amplifying Transistor Device and Current-Amplifying, Light-Emitting Transistor Device
US8927972B2 (en) * 2009-09-04 2015-01-06 Dainichiseika Color & Chemicals Mfg. Co., Ltd. Current-amplifying transistor device and current-amplifying, light-emitting transistor device

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