WO2009028188A1 - Selective film manufacturing method - Google Patents

Selective film manufacturing method Download PDF

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Publication number
WO2009028188A1
WO2009028188A1 PCT/JP2008/002337 JP2008002337W WO2009028188A1 WO 2009028188 A1 WO2009028188 A1 WO 2009028188A1 JP 2008002337 W JP2008002337 W JP 2008002337W WO 2009028188 A1 WO2009028188 A1 WO 2009028188A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
substrate
target
kept
film manufacturing
Prior art date
Application number
PCT/JP2008/002337
Other languages
French (fr)
Japanese (ja)
Inventor
Hiromasa Ohmi
Kiyoshi Yasutake
Hiroaki Kakiuchi
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2009028188A1 publication Critical patent/WO2009028188A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Provided is a selective film manufacturing method for selectively forming a film on a substrate easily without using a CVD method only on a surface section which is composed of a material such as Si on the substrate surface and is to have the thin film formed thereon. In a reaction chamber filled with a reaction gas mainly composed of a mixed gas of hydrogen and a rare gas at a pressure of 10-202kPa (76-1,520Torr), the substrate kept at a relatively high temperature and the target kept at a relatively low temperature with a volatile hydroxide are arranged in parallel. Electric discharge is generated between the substrate and the target, and a thin film of the target is selectively formed on the surface whereupon the film is to be formed, by using a difference between the film deposition speed on the surface section whereupon the film is to be formed and that on other surfaces. As the rare gas, He and Ne can be suitable used.
PCT/JP2008/002337 2007-08-31 2008-08-28 Selective film manufacturing method WO2009028188A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-225020 2007-08-31
JP2007225020A JP2010262947A (en) 2007-08-31 2007-08-31 Selective film manufacturing method

Publications (1)

Publication Number Publication Date
WO2009028188A1 true WO2009028188A1 (en) 2009-03-05

Family

ID=40386927

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002337 WO2009028188A1 (en) 2007-08-31 2008-08-28 Selective film manufacturing method

Country Status (2)

Country Link
JP (1) JP2010262947A (en)
WO (1) WO2009028188A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210088318A (en) 2020-01-06 2021-07-14 삼성전자주식회사 Thin film manufacturing apparatus using plasma and method of forming a thin film

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01308018A (en) * 1988-06-07 1989-12-12 Nkk Corp Semiconductor thin film material and manufacture thereof
JPH03237093A (en) * 1990-02-15 1991-10-22 Nippon Sheet Glass Co Ltd Method for selectively growing si crystal
JPH04133419A (en) * 1990-09-26 1992-05-07 Clarion Co Ltd Manufacture of iii-v compound semiconductor single crystal film and its selective growth method and device
JP2003282451A (en) * 2002-03-22 2003-10-03 National Institute Of Advanced Industrial & Technology METHOD OF FORMATION SiC MONOCRYSTALLINE THIN FILM
WO2007049402A1 (en) * 2005-10-26 2007-05-03 Sharp Kabushiki Kaisha Process for producing film using atmospheric pressure hydrogen plasma, and method and apparatus for producing purification film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01308018A (en) * 1988-06-07 1989-12-12 Nkk Corp Semiconductor thin film material and manufacture thereof
JPH03237093A (en) * 1990-02-15 1991-10-22 Nippon Sheet Glass Co Ltd Method for selectively growing si crystal
JPH04133419A (en) * 1990-09-26 1992-05-07 Clarion Co Ltd Manufacture of iii-v compound semiconductor single crystal film and its selective growth method and device
JP2003282451A (en) * 2002-03-22 2003-10-03 National Institute Of Advanced Industrial & Technology METHOD OF FORMATION SiC MONOCRYSTALLINE THIN FILM
WO2007049402A1 (en) * 2005-10-26 2007-05-03 Sharp Kabushiki Kaisha Process for producing film using atmospheric pressure hydrogen plasma, and method and apparatus for producing purification film

Also Published As

Publication number Publication date
JP2010262947A (en) 2010-11-18

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