WO2009024462A1

WO2009024462A1 - Laser amplification system

Info

Publication number: WO2009024462A1
Application number: PCT/EP2008/060303
Authority: WO
Inventors: Uwe Brauch; Adolf Giesen; Frank Demaria
Original assignee: Landesstiftung Baden-Württemberg gGmbH
Priority date: 2007-08-17
Filing date: 2008-08-05
Publication date: 2009-02-26
Also published as: DE102007040369A1

Abstract

In order to couple at least one quantum structure system (60) to the pump beam (70) and to the laser amplification beam field (30) in a laser amplification system comprising a solid body (10) having a laser-active volume area (50) in which a laser-active quantum structure system made of semiconductor material is disposed, and in which the at least one quantum structure system (60) is disposed between barrier structures (64) disposed on both sides of the same, and comprising a pump beam source (72), and comprising an amplification optic (40) defining a laser amplification beam field, the invention proposes that a reflector system (42, 46, 48) be disposed on each side of the laser-active volume area (5), reflecting the pump beam field (30) such that a locally static pump beam intensity gradient is formed in the laser-active volume area, having intensity values in a center area between the reflector systems within the quantum structure system (60) of at least 60% of the nearest local intensity maximum, and that the reflector systems (42, 46, 48) reflect the laser amplification beam field (30) such that a locally static amplifier beam intensity gradient is formed, having intensity values in the center area within the same at least one quantum structure system (60) of at least 60% of the nearest local intensity maximum.

Description

Laser amplifier system

The invention relates to a laser amplifier system comprising

a thermally coupled to a heat sink solid body having a fiber-active volume range in which parallel to at least one transverse to an optical axis structure surface at least one at least over a portion of the structure surface extending laser active quantum structure of semiconductor material is arranged and in which the at least one quantum structure system between arranged on both sides of the same arranged barrier structures,

a pump radiation source generating a pump radiation field propagating transversely to the at least one structure surface for optically pumping the laser active volume region such that the absorption of pump radiation from the pump radiation field in the at least one iaser active quantum structure is equal to or greater than the absorption of pump radiation by the barrier structures;

and an amplifier optic defining the fiber-active volume range passing through the laser amplifier radiation field.

Such laser amplifier systems are known from the prior art. In these, there is the problem of optimally coupling the at least one quantum structure system to the pump radiation, and also optimally coupling it to the laser amplifier radiation field, since the pump radiation field necessarily has a shorter wavelength than the laser amplifier radiation field.

This object is achieved in a laser amplifier system of the type described above according to the invention that in each case a reflector system is arranged in the direction of the optical axis on both sides of the fiber-active volume range, which reflect the pump radiation field such that forms a locally stationary pump radiation intensity profile in the laser-active volume range, which in a central region between the reflector systems within the at least one quantum structure system has intensity values of at least 60% of the locally closest intensity maximum and in that the reflector systems reflect the laser amplifier radiation field such that a localized amplifier radiation intensity profile forms in the laser active volume region Range within the same at least one quantum structure system intensity values of at least 60% of the locally closest intensity maximum s.

The advantage of the solution according to the invention lies in the fact that the possibility has been created by suitable dimensioning of the reflector systems to optimally couple the at least one quantum structure system both to the pump radiation field and to the amplifier radiation field, although the pump radiation intensity profile and the amplifier radiation intensity profile are in each case reflected by electromagnetic waves of different wavelengths are formed. It is advantageous if the intensity values of the pump radiation intensity profile amount to at least 70%, better at least 80% and even better at least 90% of the next local maximum intensity.

Furthermore, it is advantageous if the intensity values of the amplifier radiation intensity profile amount to at least 70%, better at least 80%, and even better at least 90% of the next local maximum intensity.

A particularly advantageous solution provides that a plurality of quantum structure systems are arranged in the central region, within which both intensity values of the pump radiation intensity profile and intensity values of the amplifier radiation intensity profile of at least 60% of the respective nearest focal intensity maximum are. This solution has the advantage that it increases the amplification of the laser-active volume range.

It is advantageous if the intensity values of the pump radiation intensity profile amount to at least 70%, better at least 80% and even better at least 90% of the next local maximum intensity.

It is particularly favorable if the central region extends in the direction of the optical axis on both sides of a reference plane up to approximately one third of a distance of the reference plane from the respective reflector system. However, it is also conceivable that the central region extends in the direction of the optical axis up to approximately half of a distance of the reference plane from the respective reflector system.

The boundary conditions according to the invention can be realized even more simply if the central region between the reflector systems extends in the direction of the optical axis up to approximately two thirds of a distance of the reference plane from the respective reflector system.

In this case, the central region is always defined such that this is the region in which the quantum structure systems lying within it are optimally coupled both to the pump radiation intensity profile and to the amplifier radiation intensity profile by being within the same, ie within the range of their extent Direction of the optical axis, in each case both an intensity maximum of the pump radiation intensity curve and an intensity maximum of the amplifier radiation intensity curve is.

As an alternative or in addition to the above-described features of a laser amplifier system according to the invention, this can be defined according to a further embodiment in that the solid is constructed in such a way that starting from a first reference plane lying in the laser active volume range in a first direction parallel to the optical axis a first layer system which is a first reflecting both the laser amplification field and the pump radiation field Reflector system and which leads to the formation of an amplifier radiation intensity profile and a pump radiation intensity profile having in the reference plane a substantially identical or by a ganzzahuges of 2 Pi (360 °) different relative phase position.

Furthermore, as an alternative or in addition to the solutions described above, the laser amplifier system according to the invention can be defined according to a further embodiment in that, starting from a second reference plane lying in the laser-active volume range in a second direction opposite to the first direction, a second layer system follows parallel to the optical axis a second reflector system which reflects both the laser amplifier radiation field and also the pump radiation field, and which generates an amplifier radiation intensity course and a pump radiation intensity profile which have a substantially identical relative phase position or differ in the second reference plane by an integer multiple of 2 pi.

This solution ensures that the pump radiation intensity profile and the amplifier radiation intensity profile are formed at least in the area of the first and second reference planes so that optimal coupling of both the pump radiation field and the laser amplifier radiation field to the at least one quantum structure system is possible.

It is particularly advantageous if the first reference plane and the second reference plane have a distance from each other which corresponds to a maximum of 20% of a distance between two intensity maxima of the amplifier radiation intensity curve or a maximum of 20% of the distance plus a simple to triple integer multiple of the distance. In the simplest case, it is provided that the first reference plane and the second reference plane coincide and the phase positions of the pump radiation intensity profile generated by the first layer system and of the pump radiation intensity profile generated by the second layer system in the reference planes merge into each other approximately without phase jump.

Furthermore, it is advantageously provided that the first reference plane and the second reference plane coincide and that the phase positions of the amplifier radiation intensity profile generated by the first layer system and of the amplifier radiation intensity profile generated by the second layer system in the reference planes merge into one another approximately without phase jump.

As an alternative or in addition to the embodiments described hitherto, a weather embodiment provides that a first layer system adjoins the at least one quantum structure system in a first direction parallel to the optical axis, which reflects both the laser amplifier radiation field and the pump radiation field and both in the amplifier radiation intensity profile also leads to an intensity value of at least 60% of the locally closest intensity maximum in the at least one quantum structure system in the case of the pump radiation intensity profile.

As an alternative or in addition to the embodiments described so far, a further embodiment provides that the at least one quantum structure system is connected in a second, the first direction opposite direction parallel to the optical axis of a second layer system connects, which reflects both the laser amplifier radiation field and the Pumpstrahiungsfeid and both the amplifier radiation intensity course and the pump radiation intensity curve to an intensity value of at least 60% of the locally closest intensity maximum in the at least one quantum structure system leads ,

It is advantageous if the intensity values of the pump radiation intensity profile amount to at least 70%, better at least 80% and even better at least 90% of the nearest local intensity maximum.

Furthermore, it is advantageous if the intensity values of the amplifier radiation intensity profile amount to at least 70%, better at least 80% and even better at least 90% of the nearest local intensity maximum.

Expediently, it is provided that the locally closest intensity maximum generated by the first reflector system in the pump radiation field and the locally closest intensity maximum generated by the second reflector system locally coincide approximately.

It is favorable if, in the case of the pumping radiation field, the locally closest intensity maximum generated by the first reflector system locally coincides with the locally closest intensity maximum generated by the second reflector system.

Furthermore, it is expediently provided that, in the case of the laser amplifier radiation field, the locally closest intensity maximum generated by the first reflector system and the locally closest intensity maximum generated by the second reflector system locally coincide approximately. In this case, it is particularly favorable if the focal maximum intensity maximum generated by the first reflector system in the case of the laser amplifier radiation field coincides locally with the locally closest intensity maximum generated by the second reflector system.

With this solution, the at least one quantum structure system can be optimally pumped through the pump radiation field and optimally coupled to the laser amplifier radiation field.

Particularly optimal coupling is designed when the respective maximum intensity is in the direction of the optical axis in the at least one quantum structure system in order to achieve the best possible coupling.

The coupling is optimal if the respective intensity maximum in the direction of the optical axis is arranged substantially centrally in the at least one quantum structure system.

In order to further improve the gain of the laser amplifier system according to the invention, it is preferably provided that the first layer system has at least one further quantum structure system arranged between barrier structures, which extends over at least a partial area of a structure area arranged parallel to the structure area of the at least one quantum structure system. It is even better if the first layer system has a plurality of quantum structure systems arranged between barrier structures, which are each arranged in structural surfaces parallel to the structure surface of the at least one quantum structure system.

Likewise, it is favorable if the second layer system has at least one quantum structure system arranged between barrier structures and extending over at least a partial area of a structure area parallel to the structure area of the at least one quantum structure system.

It is even better for the second layer system to have a plurality of laser-active quantum structure systems which extend in each case over the partial area of the same to the structural area of the at least one quantum structure system and which are arranged between barrier layers.

It is particularly favorable if, in the respective layer system, the at least one quantum structure system is arranged such that a pump radiation intensity profile in the quantum structure system reaches an intensity value of at least one third of the locally closest intensity maximum.

It is even better if, in the respective layer system, the at least one quantum structure system is arranged such that a pump radiation intensity profile in the quantum structure system reaches an intensity value of at least two-thirds of the locally closest intensity maximum. Moreover, it is provided in the solution according to the invention that in the respective layer system the at least one further quantum structure system is arranged so that in this the amplifier radiation intensity curve reaches an intensity value of at least one third of the locally closest intensity maximum.

It is even better if in the respective layer system the at least one further quantum structure system is arranged in such a way that the intensity of the amplifier radiation intensity reaches at least two-thirds of the locally closest intensity maximum.

With regard to the properties of the reflector systems, no further details have been given so far.

For example, it would be conceivable to form the heat sink as a transparent body, which is transparent either to the pumping radiation field and / or the laser amplifier radiation field.

An advantageous embodiment, however, provides that the first reflector system substantially completely reflects the pumping radiation field, so that there is no need to pass the pumping radiation field through the heat sink.

A further advantageous embodiment provides that the first reflector system substantially completely reflects the laser amplifier radiation field, so that likewise there is no need to guide the laser amplifier radiation field through the heat sink. In these solutions, it has proven to be expedient for the second reflector system to partially reflect the pump radiation field.

Thus, for example, it is possible to couple the pump radiation field through the second reflector system in the laser-active volume range.

Furthermore, it is expediently likewise provided that the second reflector system partially reflects the laser amplifier radiation field.

Thus, it is also possible to decouple the laser amplifier radiation field by the second reflector system from the laser-active volume range.

With regard to the structure of the reflector systems, no details have yet been provided, except that the reflector systems are each parts of layer systems.

The reflector systems are also layer systems, even if they appear as a continuous or continuously varying refractive index gradient pointing reflector systems, since these are constructed when looking at the individual successive atomic layers of layers.

The layers of the reflector systems could be made of any material having a suitable refractive index, for example dielectrics.

A particularly advantageous solution provides that the first reflector system comprises semiconductor layers Conveniently, the first reflector system is constructed so that it comprises Halbieiterschichten of different semiconductor material.

A particularly simple way of constructing the first reflector system provides that the first reflector system comprises semiconductor layers of a first semiconductor material and semiconductor layers of a second semiconductor material, so that the reefing system can be at least partially constructed from semiconductor layers of two different semiconductor materials.

In this case, it is particularly expedient if the semiconductor layers of the first semiconductor material and the semiconductor layers of the second semiconductor material alternate with one another.

Furthermore, in principle, the semiconductor layers could have the same thickness.

For the solution according to the invention, however, it is particularly favorable if the thickness of the semiconductor layers following one another in the direction of the optical axis varies.

An expedient embodiment provides that the thickness of the semiconductor layers following one another in the direction of the optical axis varies from the same semiconductor material, so that the semiconductor layers also vary in their thickness within the same semiconductor material. Conveniently, the first reflector system as the last reflective layer on a metal layer, which still reflects the residual intensity and thus eliminates the need for further refractive indices of varying layers.

Furthermore, an advantageous embodiment provides that the second reflector system comprises semiconductor layers.

In the case of the second reflector system too, it has proved to be advantageous if this comprises semiconductor layers of different semiconductor material.

It is particularly advantageous if the second reflector system comprises semiconductor layers of a first semiconductor material and semiconductor layers of a second semiconductor material, so that two different semiconductor materials may be sufficient to construct the second reflector system.

It is particularly advantageous if the semiconductor layers of the first semiconductor material and the Halbieiterschichten of the second semiconductor material alternate, that is, that in the direction of the optical axis, a semiconductor layer of the first Halbieitermaterial on a semiconductor layer of the second Halbieitermaterial follows.

In principle, in the second reflector system, the semiconductor layers may have the same thickness. However, in the case of the solution according to the invention, optimum adaptation to the required specifications can be achieved in particular if the thickness of the semiconductor layers following one another in the direction of the optical axis varies.

It is particularly favorable if the thickness of the semiconductor layers following one another in the direction of the optical axis varies from the same semiconductor material in order, in particular, to be able to achieve optimal reflection properties for the pump radiation field and the laser amplifier radiation field by this thickness variation.

In order to obtain a favorable adaptation of the amplifier radiation intensity profile and the pump radiation intensity variation at the transition between the environment and the solid state, it is preferably provided that the second reflector system comprises a cover layer of dielectric material.

In this case, the cover layer is expediently arranged on an opposite side of the second reflector system to the laser-active volume region.

In principle, it would be possible to work in the first reflector system and the second reflector system and with different semi-conductive materials.

However, a particularly favorable solution provides that the semiconductor materials in the first and the second reflector system are identical, so that the reflector systems can thus be constructed in a simple manner as layer systems. With regard to the course of the pump radiation field and the laser amplifier radiation field in the solid, no further details have so far been given.

Thus, it would be conceivable, for example, for the pump radiation field and the laser amplifier radiation field to run parallel to one another, for example parallel to the optical axis.

Such a solution has the disadvantage that this results in problems in the formation of the pump radiation intensity profile and the amplifier radiation intensity curve in the solid, since the pump radiation field and the laser amplifier radiation field have different wavelengths and thus the difficulty exists, the pump radiation intensity profile and the amplifier radiation intensity curve in the direction of the optical axis in To arrange the solid body locally in such a way that an optimal coupling of the quantum structure systems to the pump radiation intensity profile as well as to the intensifier radiation intensity profile is possible.

For this reason, an advantageous solution provides that the pump radiation field and the laser amplifier radiation field extend in different spatial directions relative to the optical axis in the solid.

The course of the same in different spatial directions relative to the optical axis makes it possible to form the pump radiation intensity course that forms in the direction of the optical axis and in the direction of the In a suitable manner, the amplifier beam intensity curve forming the optical axis can be adapted to one another, in particular such that a favorable coupling to the quantum structure systems is possible.

Thus, an advantageous solution provides that the pumping radiation field runs essentially parallel to the optical axis in the solid body.

It is advantageous if the laser amplifier radiation field extends obliquely to the optical axis in the solid state.

Another advantageous solution provides that the laser amplifier radiation field runs essentially parallel to the optical axis in the solid.

In this case, it is favorable if the pump radiation field extends obliquely to the optical axis in the solid.

By adapting the course of the radiation fields in the solid body, it is possible to obtain a locally standing pump radiation intensity profile and a localized intensification radiation intensity profile in the laser-active volume range, which are advantageously coupled to the respective quantum structure systems.

In the simplest case, the pump radiation field and the laser amplifier radiation field can essentially run in a plane passing through the optical axis. However, it is also conceivable for the pump radiation path and the laser amplifier radiation field to propagate in different planes respectively passing through the optical axis.

Further features and advantages of the solution according to the invention are the subject of the following description and the drawings of some Ausfϋhrungsbeispiele.

In the drawing show:

Fig. 1 is a schematic side view of a first embodiment of a laser amplifier system according to the invention;

Fig. 2 is an enlarged section through a solid according to

Fig. 1 of the laser amplifier system according to the invention parallel to the optical axis;

FIG. 3 is an illustration of an amplifier radiation intensity profile in the solid in the direction of the optical axis in the first embodiment; FIG.

4 is an illustration of a pump radiation intensity profile in the solid in the direction of the optical axis in the first embodiment; 5 is a fragmentary view of the amplifier radiation intensity distribution in the solid in the direction of the optical axis between a reference plane and a heat sink in the first embodiment;

6 is a fragmentary view of the pump radiation intensity profile in the solid in the direction of the optical axis between the reference plane and a heat sink in the first embodiment;

7 shows a detail of the amplifier radiation intensity profile in the solid in the direction of the optical axis between a reference plane and an inlet side in the first embodiment;

8 is a fragmentary view of the pump radiation intensity distribution in the solid in the direction of the optical axis between the reference plane and the entrance side in the first embodiment;

FIG. 9 shows a detail of the amplifier radiation intensity profile in the solid in the direction of the optical axis in a laser-active volume range in the first exemplary embodiment; FIG.

10 is a fragmentary view of the pump radiation

Intensitätsverlaufs in the solid in the direction of the optical axis in the laser-active volume range in the first embodiment; 11 shows a representation according to FIG. 1 in a second embodiment of a laser amplifier system according to the invention; FIG.

FIG. 12 is an illustration according to FIG. 2 in the second embodiment; FIG.

FIG. 13 is a view similar to FIG. 3 in the second embodiment; FIG.

FIG. 14 is a view similar to FIG. 4 in the second embodiment; FIG.

FIG. 15 is a view similar to FIG. 5 in the second embodiment; FIG.

FIG. 16 is a view similar to FIG. 6 in the second embodiment; FIG.

FIG. 17 is a view similar to FIG. 7 in the second embodiment; FIG.

FIG. 18 is a view similar to FIG. 8 in the second embodiment; FIG.

FIG. 19 is a view similar to FIG. 9 in the second embodiment; FIG. FIG. 20 is a view similar to FIG. 10 in the second embodiment; FIG.

Table 1 is a tabular representation of a layer structure of the solid in the first embodiment and

Table 2 is a Tabeilarische representation of the layer structure of the solid in the second embodiment of the laser amplifier system according to the invention.

A first exemplary embodiment of a laser amplifier system according to the invention, illustrated in FIGS. 1 and 2, comprises a solid body 10 made of half-titer layers, which has a cooling surface 12 provided with a metallization 14, wherein the metallization is provided by means of a solder layer 16 having a surface 18 as a Whole is associated with 20 designated heatsink. Due to the planar connection between the surface 18 of the heat sink 20 and the cooling surface 12 of the solid 10 is a good thermal coupling between the solid 10 and the heat sink 20 to efficiently dissipate heat from the solid 10 in the heat sink 20.

The solid body 10 is used for the optical amplification of a laser radiation radiation field 30, which propagates along an optical axis 32 which extends transversely, preferably perpendicularly, to the cooling surface 12.

The laser amplifier radiation field 30 is determined by an amplifier optics 40, which on the one hand an external reflector 42 with a solid surface 10 facing the reflector surface 44 and on the other hand, two internal Reflector systems 46 and 48, wherein the reflector system 46 is disposed in the solid 10 between a laser-active volume region 50 and the metallization 14, while the reflector system 48 between the laser-active Voiumenbereich 50 and one of the metallization 14 opposite and approximately parallel to the metallization 14 extending inlet side 52nd of the solid body is arranged, which in turn faces the external reflector 42.

Preferably, the inlet side 52 extends transversely, substantially perpendicular to the optical axis 32nd

Furthermore, preferably also the reflector surface 44 of the external reflector 42 extends transversely, in particular at the point of intersection with the optical axis 32 perpendicular to this.

Arranged in the laser-active volume region 50 are a plurality of quantum structure systems 60 which extend in structure planes 62, wherein the structure planes 62 extend transversely, preferably perpendicular to the optical axis 32. Further, the structural planes 62 are substantially parallel to each other.

Furthermore, on each side of each quantum structure system 60 barrier structures 64 are arranged, the function of which will be explained in detail below.

In the simplest case, the quantum structure systems 60 each comprise only one quantum structure, which is made, for example, of the semiconductor material GaAs and has a thickness in the range from approximately 5 nm to approximately 10 nm. In general, such a quantum structure transverse to the respective structure surface 62 may have a thickness which is at most on the order of 10 times, more preferably the simple, of the wavelength of the electrons in the quantum structure forming semiconductor material.

Thus, such a quantum structure determines the extent of an electron gas present in it, so that there is a dimension-limited electron gas.

In the case of a planar formation of a quantum structure, for example a planar extension in the respective structure surface 62, there is a quantum film in which a two-dimensional electron gas exists. However, it is also possible to form a quantum structure as a plurality of quantum wires extending in the respective structure surface 62 with a one-dimensional electron gas, or it is possible to pass a quantum structure 60 through in the structure surface 62 in a pattern, for example a regular pattern. arranged to form quantum dots with a respective zero-dimensional electron gas.

The description of such simple quantum structures can be found, for example, in the book by Karl-Joachim Ebeling, "Integrated Optoelectronics", Springer Verlag 1992, pages 215 to 221.

As an alternative to the formation of a quantum structure system 60 from a simple quantum structure, as mentioned above, it is also possible to construct such a quantum structure system from, for example, two or three quantum structures. A further suitable embodiment of a quantum structure system is to construct it from a quantum structure group comprising in each case a plurality of quantum structures which are, however, only separated from one another by tunnel barrier structures, so that charge carriers can tunnel between the quantum structures of a quantum structure group and the optical pumping a quantum structure of the quantum structure group can be made while the stimulated emission can be made from another quantum structure of the quantum structure group.

Such quantum structure groups are described, for example, in the German Patent Application 10 2007 029 257 to the Anmeiderin,

A pumping of the quantum structure systems 60 in the laser-active volume range is preferably effected by a pump radiation field designated as a whole by 70, which enters the solid from a pump radiation source 72 and impinges obliquely on the inlet side 52, for example, and due to the refraction in the solid body 10 approximately in the direction of optical axis 32, with a slight skew propagates to this.

The pumping radiation field 70 is reflected in the solid body 10 both by the reflector system 46 and by the reflector system 48, which thus together form a microcavity 72 in the solid body 10, which causes the solid body 10, in particular in the laser-active volume region 50 of the solid 10, forms a locally standing pump radiation intensity course PIV shown in FIG. 4, which thus also has locally standing intensity maxima IMP in the laser-active volume range. Since the reffector systems 46 and 48 also reflect the laser amplifier radiation field 30, the microcavity 72 is also effective for the laser intensity radiation field 30, so that in the laser-active volume region 50 there is also a locally standing intensifier radiation intensity profile VIV with localized intensity maxima IMV forms, as shown in Fig. 3.

The detailed structure of the solid body 10 of layers essentially of semiconductor material! results, for example, from Table 1.

Table 1 shows a total of the number of layers of the solid 10, which in this Ausführungsbetspiel a total of 119 layers of semiconductor material plus a dielectric layer comprises.

Here, the layer Nr. 1 shown in Table 1 is the first layer following the metallization 14 and this layer is part of the reflector system 46 comprising the layers 1 to 83.

The layers 84 to 98 form the laser-active volume region 50, and the layers 99 to 120 form the reflector system 48.

As is apparent from Table 1, the reflector systems 46 and 48 are formed mainly of layers of two materials, namely AIAs and AIO, 2GaO, 8As, wherein the layer thicknesses are determined by an optimization process, which will be discussed in detail below. The laser-active volume region 50 comprises as quantum structure systems 60 individual quantum wells of GaAs with thicknesses of, for example, approximately 8 nm separated by barrier structures 64 of A10.4 Ga0.6 As whose band gap is greater than that of GaAs, so that the barrier structures 64 the pump radiation field 70, and thus essentially only the quantum structure systems 60 are able to absorb the pump radiation field 70.

When determining the layer thicknesses of the reflector systems 46 and 48, a determination of these layer thicknesses of the reflector systems 46 and 48 with the respective layers of the laser-active volume region 50 takes place according to the following optimization criteria.

The starting point for the optimization is the premise that in a central region 74 of the laser-active volume region 50, for example the quantum structure system 60 of the layer 91 as the central quantum structure system 60 and the quantum structure systems 60 in the layers 89 and 93 as peripheral quantum structure systems 60 each have intensity maxima IMP of the pump radiation intensity profile PIV and intensity maxima IMV of the amplifier radiation intensity profile VIV lie within the extent of the quantum structure systems 60 in the direction of the optical axis 32 within the layers 91 and 89 and 93, so that optimal pumping occurs in these quantum structure systems 60 of the layers 91 and 89 and 93 the quantum structure systems 60 with maximum possible intensity and on the other hand an optimal coupling to the laser amplifier radiation field 30 takes place. The amplifier radiation intensity profile VIV in the direction of the optical axis 32 with the intensity maxima IMV is illustrated in FIG. 3 and the pump radiation intensity profile PIV in the direction of the optical axis 32 with the intensity maxima IMP is shown in FIG. 4 for the entire solid 10.

For better clarity, the amplifier radiation intensity profile VIV is also shown enlarged in FIG. 5, and the pump radiation intensity profile PIV in the region of the reflector system 46 is shown in FIG. 6 and in FIG. 7 and 8 the amplifier radiation intensity profile VIV or the pump radiation intensity profile PIV is in the area of the reflector system FIG. 48 is an enlarged view, the illustrations in FIG. 5 and FIG. 6 or FIG. 7 and FIG. 8 starting from a reference plane 80 which is centered in the direction of the optical axis 32 in the quantum structure system 60 of the layer 91 and also in the center thereof laser-active volume range 50 between the reflector systems 46, 48 is located.

Furthermore, in FIGS. 9 and 10, the amplifier radiation intensity profile VIV and the pump radiation intensity profile PIV within the laser-active cavity region 50 are shown enlarged again, wherein it can be seen that in the quantum structure system 60 in the layer 91, in particular in the center of the quantum structure system 60 , and thus in the reference plane 80 the intensity maximum IMV of the amplifier radiation intensity profile VIV and the intensity maximum IMP of the pump radiation intensity profile PIV, respectively in the center thereof, preferably in the reference plane 80, so that the intensity value IWV of the amplifier radiation intensity profile VIV and the intensity value IWP of the pump radiation intensity profile PIV is maximum. With such an essentially monochrome arrangement of the maxima IMV and IMP of the amplifier radiation intensity profile VIV or pump radiation intensity profile PIV, the position of the next adjacent quantum structure systems 60 in the layers 89 and 93, which are arranged at a suitable distance from the layer 91, then also results in that the intensity value IWV corresponds to the local next respective respective intensity maximum IMV of the amplifier radiation intensity profile VIV and the intensity value IWP corresponds to the local next respective respective intensity maximum IMP of the pump radiation intensity profile PIV in the direction of the optical axis 32, since the intensity maxima IMV and IMP are also still lie within the respective quantum structure system 60 of this layer and thus in this quantum structure system 60 in the layers 89 and 93 also still given the opportunity, on the one hand, the quantum structure system 60 to optimally pum pen and on the other hand to achieve an optimal coupling to the Laserverstärkerstrahlungsfefd 30.

The solution according to the invention thus provided the optimum possibility, in the central region 74 of the laser-active volume region 50, of at least one of the quantum structure systems 60, preferably the quantum structure system 60 of the layer 91, even better in the case of several quantum structure systems 60, preferably the quantum structure systems 60 of the layers 91 and 89 and 93, optically pumping the respective quantum structure system 60 with the pump radiation field 70 and, on the other hand, optimally coupling this to the laser amplifier radiation field 30. In this case, the quantum structure systems 60 optimally used for the laser amplifier operation are all at a distance from the heat sink 20, which still leads to favorable results and on the other hand still so that in the largest possible number of quantum structure systems 60 in the laser-active volume range 50 on the one hand optical pumping with the Purnp radiation field 70 is efficiently possible and on the other hand still an efficient coupling to the laser amplifier radiation field 30, so as to achieve an optimal gain in the laser action.

The definition of the structure of the solid 10 is preferably carried out by fixing the central region 74, in particular in the exact center of the laser-active volume region 50. In addition, for the dimensioning of the layers, the reference plane 80 in two reference planes, namely in a first reference plane 80a and a second reference plane 80b, which initially do not necessarily have to coincide in the reference plane 80.

Starting from a first reference plane 80a placed centrally in the layer 91, as shown by way of example in FIGS. 5 and 6, a layer system extending in a first direction 92 parallel to the optical axis 32 and lying between the reference plane 80a and the metallization 14 can be obtained 86, on the one hand with the requirement that this layer system 86 should include three quantum structure systems 60 within the laser volume region 50 and, moreover, the layers 1 to 83 of the reflector system 46.

Furthermore, for the optimization of the layer system 86, it is predetermined that both the amplifier radiation intensity profile VIV and the pump radiation intensity profile PIV in the reference plane 80a, the same relative Phase phase, in the simplest Fafi, intensity maxima IMV and IMP, should have, so that the reference plane 80a in the absolute maximum of the same, that is, both intensity gradients, namely the amplifier radiation intensity profile VIV and the pump radiation intensity course PIV should be starting from the reference plane 80 and starting with an intensity maximum IMV and IMP for metallization to the cooling body 20 out, the mirror system 46, both the amplifier radiation field 30 and the pump radiation field 70 with maximum reflectivity, that is, a reflectivity of more than 95%, to be reflected.

Furthermore, starting from a reference plane 80b arranged in the direction of the optical axis 32 in the middle of the layer 91, the layer system 88 extending parallel to the optical axis 32 and comprising the layers 99 to 120 in a second direction 94 opposite the first direction 92 is configured to that this layer system also comprises further quantum structure systems 60, for example the quantum structure systems 60 in the layers 93, 95 and 97, and the reflector system 48 and thereby leads to the formation of both an amplifier radiation intensity profile VIV and a pump radiation intensity profile PIV, which have the same relative phase position exactly in the reference plane 80b , In the simplest case has intensity maxima IMV or PIV.

Furthermore, a reflectivity in the range between approximately 50% to approximately 99% is selected for the reefing system 48 in this case, so that a coupling out of the laser amplifier radiation field 30 and simultaneous coupling of the pump radiation field 70 is possible by the reflector system 48. In order not to disturb the pump radiation intensity profile PIV when passing through the entrance side 52, a layer 119 formed from AIO, 2GaO, 8As and another dielectric layer 120 formed as a cover layer 90 are provided for the protection of the layer 118, wherein the layer 120 with its free Surface then immediately forms the inlet side 52 and is provided with such a thickness that, as shown in Fig. 8, the transition from the layer 119 into the layer 120 is approximately in the region of a minimum or near a minimum of the pump radiation intensity profile PIV.

In the same way, the amplifier radiation intensity profile VIV is also adjusted so that the transition from the layer 119 into the dielectric layer 120 has approximately a minimum thereof, as shown in FIG.

Further, the layer 120 lying between the layer 119 and the entrance side 52, which is made of a dielectric material and is formed as a quarter-wave dielectric layer, which prevents the optically "hard transition" between the semiconductor material and the air with a a very large refractive index jump forms a maximum of the pump radiation intensity profile PIV and the amplifier radiation intensity profile VIV, so that it is possible to obtain a minimum of the pump radiation intensity ratio PIV and the amplifier radiation intensity profile VIV at the transition between the layer 118 and the layer 119.

The spacing of the reference planes 80a and 80b can basically be selected such that no phase jump of the amplifier radiation intensity profile VIV and of the .mu.s between the two reference planes 80a and 80b Pump radiation intensity course PIV occurs and thus present in the microcavity 72 a phase jump-free amplifier radiation intensity profile VIV and a phase jump-free Pumpenstrahlungsintensitätsveriauf PIV.

If intensity maxima IMV and IMP are in each case in the reference planes 80a and 80b and if the two reference planes 80a and 80b are combined to form the common reference plane 80, exactly one intensity maximum IMV of the amplifier radiation intensity profile VIV and an intensity lie in this reference plane 80 Maximum IMP of the pump radiation intensity curve PIV and in the laser-active volume range 50 are at least the nearest intensity maxima IMV of the amplifier radiation intensity profile VIV and the intensity maxima IMP of the pump radiation intensity profile PIV symmetrical to the reference plane 80.

To optimize the layer thicknesses and the number of layers of the layer system 86 starting from the reference plane 80a and the layer system 88 starting from the reference plane 80b, it is possible to proceed analogously to the procedure in Electronic Letters, September 1996, Vol. 32, No. 19, page 1782, for example or alternatively according to the article by Tikhonravor in APPLIED OPTICS, Vol. 28, Oct. 1996, page 5493 or the simplified Needle algorithm of the optimization program "Spektrum" of the Laserzentrum Hannover, author: Dr. med. Manfred Diekmann.

A further procedure for determining the layer thicknesses of the layer in the layer systems 86 and 88 provides that the reflectivity for one of the wavelengths, for example, for the wavelength of the laser amplifier radiation field 30, is determined and also the reflectivity for the pump radiation field 70 is achieved, that according to the above described additional thickness variations according to a beat frequency are added so that thereby also for the wavelength of the pump radiation field 70, the desired reflection values result.

However, it is also possible to combine the above-described procedures in a suitable form.

In the first embodiment of the laser amplifier system according to the invention by the incidence of the pump radiation field 70, obliquely relative to the optical axis 32, due to the shortened in the direction of the optical axis 32 K vector, the formation of the pump radiation intensity profile PIV in the Mikrokavität 72 with a local course, the corresponds to a parallel to the optical axis 32 incident pump radiation field having a larger wavelength. For example, with an obliquely incident pump radiation field of 808 nm, the formation of a pump radiation intensity profile PIV in the microcavity 72 in the direction of the optical axis 32 would take place with a local profile corresponding to the pump radiation field incident in the direction of the optical axis 32 with a wavelength of approximately 818 nm , Consequently, the reflector systems 46 and 48 are to be designed such that they reflect both the approximately parallel to the optical axis 32 incident laser amplifier radiation field 30 at a wavelength of 855 nm and obliquely to the optical axis 32 incident pump radiation field 70 with a wavelength of 808 nm in that the Reflector systems 46 and 48 have a suitable reflectivity and phase, which is effective at both 855 nm and 818 nm. In contrast, in a second exemplary embodiment, shown in FIG. 11, the pump radiation field 70 enters the solid 10 approximately parallel to the optical axis 32, while the laser amplifier radiation field 30 'has a spatial direction oblique to the optical axis 32 into the solid 10 and reflected by two external reflectors 31a and 31b.

As a result, the reflector systems 46 "and 48" are designed to be effective in the pump radiation field 70 ", for example of 808 nm, which is incident approximately parallel to the optical axis 32 and which in the microcavity 72 is a Pump radiation intensity course PIV leads, which corresponds to the wavelength of the Pumpstrahiungsfelds 70 ', for example, of 808 nm.

In contrast, in the second embodiment example! the laser amplifier radiation field 70 'obliquely to the optical axis 32 and therefore results in the formation of an amplifier radiation intensity profile VIV within the solid 10 in the direction of the optical axis 32, which corresponds to the local intensity profile of a parallel to the optical axis 32 propagating laser amplifier radiation field at a wavelength of about 870 nm ,

That is, in this case, the reflector systems 46 and 48 are to be dimensioned such that they both build up the locally standing pump radiation intensity profile PIV according to a wavelength of 808 nm and the locally located amplifier radiation intensity profile VIV with a local course corresponding to that in the direction of the optical Axis 32 incident wavelength of about 870 nm. With such a difference of the wavelength relevant to the formation of the amplifier radiation intensity profile VIV and the wavelength relevant for the pump radiation intensity profile PIV, it is difficult to provide reflector systems 46 and 48 with suitable reflectivity and phase angle.

For this reason, the reflector systems 46 and 48 are selected to have two refractive maximums selected according to the wavelengths to be reflected.

The detailed structure of the solid 10 'is shown in Table 2. Table 2 shows in total the number of layers of the solid 10 ', which in this embodiment comprises a total of 118 layers of Halbleitermateriai and a directly adjacent to the inlet side 52 dielectric layer.

The layer 1 is - in the same way as in the first embodiment - the first layer following the metallization 14 and this layer is already part of the first reflector system 46 ', which comprises the layers 1 to 84.

The layers 85 to 99 form the laser-active volume region 50 'and the layers 100 to 119 form the second reflector system 48'.

As can be seen from Table 2, the reflector systems 46 'and 48' mainly comprise layers of two materials, namely AIAs and AIO, 2GaO, 8As, the layer thicknesses of these layers in the direction of the optical axis 32 being the same as in connection with FIG first Ausführungsbeispief described are optimized. The iaser-active volume region 50 'comprises the quantum structure systems 60, which consist of the same semiconductor material! are formed as in the first off ^¬ exemplary implementation, namely GaAs, and are separated by barrier structures AI0,4GaO, 6a, whose band gap in the same manner as in the first Ausführungsbeispiei is greater than that of the quantum structure Systems 60 so that the barrier structures 64, the Pump radiation field 70 'substantially not absorb and thus essentially only the quantum structure systems 60 are optically pumped.

In the second exemplary embodiment as well, as shown in FIGS. 13 and 14, the layer thicknesses of the reflector systems 46 and 48 are optimized in conjunction with the respective layers of the laser-active volume area 50 such that in this embodiment the quantum structure system 60 in the layer 92 is the quantum structure system is, through which the reference plane 80, in the direction of the optical axis 32 in the middle, passed through.

Furthermore, an optimization of the layer systems 86 'and 88' takes place again in the same way as described in the first exemplary embodiment.

Claims

1. A laser amplifier system comprising a thermally coupled to a heat sink solid body (10) having a laser-active volume region (50) in which parallel to at least one transverse to an optical axis (32) extending structure surface (62) at least over at least a portion of the structure surface (62) extending laser active quantum structure system (60) from semiconductor material! and in which the at least one quantum structure system (60) is disposed between barrier structures (64) disposed on both sides thereof, a pump radiation source (72) for optically pumping a pump radiation source (72) extending transversely to the at least one pattern flat (62) propagating pump radiation field (70) of the laser-active volume region (50) such that the absorption of pump radiation from the pump radiation field (70) in the at least one laser-active quantum structure system (60) is equal to or greater than the absorption of pump radiation by the barrier structures (64), and one the amplifying optical system (40) defining the laser-active volume range (50) passing through the laser amplifier radiation field (30), characterized in that in each case a reflector system (46, 48) is arranged in the direction of the optical axis (32) on both sides of the laser-active volume region (50) Reflect pump radiation field (70) such that in the laser active Vo Lumenbereich (50) forms a locally standing pump radiation intensity course (PIV), which in a central region (74) between the reflector systems (46, 48) within the at least one Quantum structure system (60) intensity values (IWP) of at least 60% of the iokal nearest maximum intensity (IMP) and that the reflector systems (46, 48) reflect the laser amplifier radiation field (30) such that in the laser-active volume region (50) a focal standing amplifier radiation intensity profile (VIV), which in the central region (74) within the same at least one quantum structure system (60) intensity values (IWV) of at least 60% of the iokal closest intensity maximum (IMV).

2. Laser amplifier system according to claim 1, characterized in that in the central area a plurality of quantum structure systems (60) are arranged, within which both intensity values (IWP) of the pump radiation intensity profile (PIV) and intensity values (IWV) of the amplifier radiation intensity profile (VIV) of at least 60th % of the locally closest intensity peak (IMP, IMV).

3. Laser amplifier system according to claim 1 or 2, characterized in that the central region (74) in the direction of the optical axis (32) on either side of a reference plane (80) up to approximately one third of a distance of the reference plane (80) of the respective reflector system (46, 48).

4. A laser amplifier system according to claim 3, characterized in that the central region (74) extends in the direction of the optical axis up to about half of a distance of the reference plane (80) from the respective reflector system (46, 48).

5. laser amplifier system according to the preamble of claim 1 or any one of the preceding claims, characterized in that the solid body (10) is constructed so that starting from a in the laser active volume region (50) lying first reference plane (80a) in a first direction (92) connects parallel to the optical axis (32) a first layer system (86), which comprises a both the Laserverstärkstrahlungsfeid and the pump radiation field reflecting first reflector system (46) and for forming an amplifier radiation intensity profile (VIV) and a pump radiation intensity profile (PIV ) having in the reference plane (80) a substantially identical or differing by an integer multiple of 2 Pi relative phase position.

6. laser amplifier system according to the preamble of claim 1 or any one of the preceding claims, characterized in that, starting from a lying in the laser active volume region (50) second reference plane (80b) in a second, the first direction (92) opposite direction ( 94) parallel to the optical axis (32) connects a second layer system (88) comprising a both the laser amplifier radiation field (30) and the pump radiation radiation reflecting second reflector system (48), and which generates an amplifier radiation intensity profile and a pump radiation intensity profile (PIV) which in the second reference plane (80b) is substantially identical or an integer multiple of

2 Pi undercut relative phase have.

7. laser amplifier system according to claim 5 or 6, characterized in that the first reference plane (80a) and the second reference plane (80b) have a distance from each other, which a maximum of 20% of a distance between two intensity maxima (IMV) of the amplifier radiation intensity profile (VIV ) or a maximum of 20% of the distance plus a simple to triple whole number of times the distance.

8. Laser amplifier system according to claim I _1, characterized in that the first reference plane (80a) and the second reference plane (80b) coincide and the phase days of the first layer system (86) generated pump radiation intensity profile (PIV) and of the second layer system (88) generated pump radiation intensity curve (PIV) in the reference planes (80a, 80b) merge into each other approximately phase-free,

9. laser amplifier system according to claim 7 or 8, characterized in that the first reference plane (80a) and the second reference plane (80b) coincide and that the phase angles of the first layer system (86) generated amplifier radiation intensity profile (VIV) and of the second layer system (88) generated amplifier intensity waveform (VIV) in the reference planes (80a, 80b) merge into each other approximately without phase jump.

10. laser amplifier system according to the preamble of claim 1 or any one of the preceding claims, characterized in that the at least one quantum structure system (60) in a first In the direction (92) parallel to the optical axis (32), a first layer system (86) which reflects both the laser amplifier radiation field (30) and the pump radiation field (70) and both in the amplifier radiation intensity profile (VIV) and in the pump radiation ink history ( PIV) results in an intensity value of at least 60% of the locally closest intensity maximum (IMV, IMP) in the at least one quantum structure system (60).

11. Laser amplifier system according to the preamble of claim 1 or any one of the preceding claims, characterized in that the at least one quantum structure system (60) in a second, the first direction (92) opposite direction (94) parallel to the optical axis (32 ) connects a second layer system (88) which reflects both the laser amplifier radiation field (30) and the pump radiation field (70) to an intensity value of at least 60% of the local intensity in both the amplifier radiation intensity profile (VIV) and the pump radiation intensity profile (PIV) closest intensity maximum (IMV, IMP) in the at least one quantum structure system (60).

12. A laser amplifier system according to claim 10 or 11, characterized in that the at the PumpstrahlungsfeSd (70) by the first reflector system (46) generated locally closest intensity maximum (IMP) and by the second reflector system (48) lokai generated closest intensity intensity Maximum (IMP) locally coincide approximately.

13. Laser amplifier system according to claim 12, characterized in that in the Pumpstrahiungsfeld (70) generated by the first reflector system (46) ioka! closest intensity maximum (IMP) coincide locally with the locally closest intensity maximum (IMP) generated by the second reflector system (48).

14. Laser amplifier system according to one of claims 10 to 13, characterized in that in the LaserverstärkerstrahSungsfeld (30) generated by the first reflector system (46) lokai nearest intensity maximum (IMV) and by the second reflector system (48) generated locally closest Intensity Maximum (IMV) Ioka! roughly coincide.

15. A laser amplifier system according to claim 14, characterized in that in the laser amplifier radiation field (30) generated by the first reflector system (46) locally closest intensity maximum (IMV) with the locally from the second reflector system (48) generated closest intensity maximum (IMV ) lokai coincides.

16. Laser amplifier system according to one of claims 10 to 15, characterized in that the respective maximum intensity (IMP, IMV) in the direction of the optical axis (32) in the at least one quantum structure system (60).

17. A laser amplifier system according to any one of claims 10 to 16, characterized in that the respective maximum intensity (IMP, IMV) in the direction of the optical axis (32) is substantially mättig in the at least one quantum structure system (60).

18. Laser amplifier system according to one of the preceding claims, characterized in that the first layer system (86) at least one further, between barrier structures (64) arranged quantum struktursy system (60) which extends at least over a portion of a structure surface (62) which is arranged parallel to the structure surface (62) of the at least one quantum structure system (60).

19. A laser amplifier system according to claim 18, characterized in that the first layer system (86) has a plurality of barrier structures (64) arranged quantum structure systems (60) in each of the structural surface (64) of the at least one quantum structure system (60) parallel Strukturfiächen (64 ) are arranged.

20. Laser amplifier system according to claim 1, characterized in that the second layer system (88) has at least one structure surface (62) arranged between barrier structures (64) and at least over a partial area of a structure surface (62) of the at least one quantum structure system (60) ) extending quantum structure system (60).

21. Laser amplifier system according to claim 20, characterized in that the second layer system (88) has a plurality of structure surfaces (62) parallel to the structure surface (62) over portions thereof and extending between barrier layers (64) arranged laser-active quantum structure systems (60).

22. Laser amplifier system according to one of the preceding claims, characterized in that in the respective layer system (86, 88) the at least one quantum structure system (60) is arranged so that a pump radiation intensity profile (PIV) in the quantum structure system (60) has an intensity value of at least one Reached one third of the locally closest intensity maximum (IMP).

23. Laser amplifier system according to one of the preceding claims, characterized in that in the respective layer system (86, 88) the at least one quantum structure system (60) is arranged so that a pump radiation intensity profile (PIV) in the quantum structure system (60) has an intensity value of at least two Reached one third of the locally closest intensity maximum (IMP).

24. Laser amplifier system according to one of the preceding claims, characterized in that in the respective layer system (86, 88) the at least one further quantum structure system (60) is arranged so that in this the amplifier beam intensity pattern (VIV) an intensity value of at least one third of the local closest intensity maximum (IMV)

25. Laser amplifier system according to one of the preceding claims, characterized in that in the respective layer system (86, 88) the at least one further quantum structure system (60) is arranged so that in this the amplifier radiation intensity curve (VIV) an intensity value of at least two third! of the locally closest intensity maximum (IMV).

26. Laser amplifier system according to one of the preceding claims, characterized in that the first reflector system (46) substantially completely reflects the pumping radiation field (70).

27. Laser amplifier system according to one of the preceding claims, characterized in that the first reflector system (46), the laser amplifier radiation field (30) substantially completely reflected.

28. Laser amplifier system according to one of the preceding claims, characterized in that the second reflector system (48), the pump radiation field (70) partially reflected.

29. Laser amplifier system according to claim 28, characterized in that the pump radiation field (70) can be coupled in by the second reflector system (48).

30. Laser amplifier system according to one of the preceding claims, characterized in that the second reflector system (48), the laser amplifier radiation field (30) partially reflected.

31 laser amplifier system according to claim 30, characterized in that the laser amplifier radiation field (30) by the second reflector system (48) can be decoupled.

32. Laser amplifier system according to one of the preceding claims, characterized in that the first reflector system (46) comprises semiconductor layers.

33. The laser amplifier system according to claim 32, characterized in that the first reflector system (46) comprises semiconductor layers of different semi-filler material.

34. A laser amplifier system according to claim 33, characterized in that the first reflector system (46) semiconductor layers of a first semiconductor material and Haibieiterschichten of a second Halbfeiter- materia! having.

35. The laser amplifier system according to claim 34, characterized in that semiconductor layers of the first semiconductor material and semiconductor layers of the second semiconductor material alternate with one another.

36. Laser amplifier system according to one of claims 32 to 35, characterized in that the thickness of the in the direction of the optical axis (32) successive Haibieiterschichten varies.

37. A laser amplifier system according to any one of claims 32 to 36, characterized in that the thickness of the successive in the direction of the optical axis (32) semiconductor layers of the same semiconductor materäal varies.

38. Laser amplifier system according to one of the preceding claims, characterized in that the second reflector system (48) comprises Haibieiterschichten.

39. Laser amplifier system according to claim 38, characterized in that the second RefJektorsystem (48) comprises semiconductor layers of different semiconductor material.

40. A laser amplifier system according to claim 39, characterized in that the second reflector system (48) Haibleiterschichten of a first Haiblettermaterial and Hafbleiterschichten of a second semiconductor Materiai has.

41. Laser amplifier system according to claim 40, characterized in that the Haibieiterschichten from the first Haiblettermaterial and semiconductor layers of the second semiconductor material alternate with each other.

42. Laser amplifier system according to one of claims 38 to 41, characterized in that the thickness of the semiconductor device in the direction of the optical axis (32) successive varies.

43. Laser amplifier system according to one of claims 38 to 42, characterized in that the thickness of the successive in the direction of the optical axis (32) Haibleiterschichten of the same semiconductor material varies.

44. Laser amplifier system according to one of claims 38 to 43, characterized in that the second Refiektorsystem (48) comprises a cover layer (90) of dielectric material.

45. The laser amplifier system according to claim 44, characterized in that the cover layer (90) is arranged on a laser active volume region (50) opposite side of the second reflector system (48).

46. A laser amplifier system according to any one of claims 32 to 45, characterized in that the Halbieitermaterialien in the first and the second reflector system (46, 48) are identical.

47. Laser amplifier system according to one of the preceding claims, characterized in that the pump radiation field (70) and the LaserverstärkerstrahiungsfeSd (30) in different spatial directions relative to the optical axis (32) extend in the solid state (10).

48. Laser amplifier system according to one of the preceding claims, characterized in that the pump radiation field (70) extends substantially parallel to the optical axis (32) in the solid state (10).

49. Laser amplifier system according to one of the preceding claims, characterized in that Laserverstärkerstrahiungsfeld (30) obliquely to the optical axis (32) in the solid body (10).

50. Laser amplifier system according to one of the preceding claims, characterized in that the Laserverstärkerstrahlungsfeid (30) extends substantially parallel to the optical axis (32) in the solid state (10).

51. Laser amplifier system according to one of the preceding claims, characterized in that the pump radiation field (70) extends obliquely to the optical axis (32) in the solid state.