WO2009020875A3 - Quaternary ganasp solar cells - Google Patents

Quaternary ganasp solar cells Download PDF

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Publication number
WO2009020875A3
WO2009020875A3 PCT/US2008/071987 US2008071987W WO2009020875A3 WO 2009020875 A3 WO2009020875 A3 WO 2009020875A3 US 2008071987 W US2008071987 W US 2008071987W WO 2009020875 A3 WO2009020875 A3 WO 2009020875A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
ganasp
quaternary
solar cells
substrate
Prior art date
Application number
PCT/US2008/071987
Other languages
French (fr)
Other versions
WO2009020875A2 (en
Inventor
Vladimir Odnoblyudov
Kevin A Tetz
David Keogh
Original Assignee
Ybr Solar Inc
Vladimir Odnoblyudov
Kevin A Tetz
David Keogh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ybr Solar Inc, Vladimir Odnoblyudov, Kevin A Tetz, David Keogh filed Critical Ybr Solar Inc
Publication of WO2009020875A2 publication Critical patent/WO2009020875A2/en
Publication of WO2009020875A3 publication Critical patent/WO2009020875A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Abstract

Methods arc disclosed of fabricating a solar cell system. A solar cell is formed over a substrate. The substrate is attached to a carrier. A translucent or transparent protective cover is overlaid over the solar cell to produce the solar cell system, which is deployed onto an exterior of a building.
PCT/US2008/071987 2007-08-03 2008-08-01 Quaternary ganasp solar cells WO2009020875A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95392507P 2007-08-03 2007-08-03
US60/953,925 2007-08-03

Publications (2)

Publication Number Publication Date
WO2009020875A2 WO2009020875A2 (en) 2009-02-12
WO2009020875A3 true WO2009020875A3 (en) 2009-04-16

Family

ID=40341976

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/071987 WO2009020875A2 (en) 2007-08-03 2008-08-01 Quaternary ganasp solar cells

Country Status (1)

Country Link
WO (1) WO2009020875A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020195137A1 (en) * 2001-06-06 2002-12-26 King Richard Roland Lattice-matched semiconductor materials for use in electronic or optoelectronic devices
US6787385B2 (en) * 2001-05-31 2004-09-07 Midwest Research Institute Method of preparing nitrogen containing semiconductor material
US20040261837A1 (en) * 2001-12-14 2004-12-30 Friedman Daniel J Multi-junction solar cell device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787385B2 (en) * 2001-05-31 2004-09-07 Midwest Research Institute Method of preparing nitrogen containing semiconductor material
US20020195137A1 (en) * 2001-06-06 2002-12-26 King Richard Roland Lattice-matched semiconductor materials for use in electronic or optoelectronic devices
US20040261837A1 (en) * 2001-12-14 2004-12-30 Friedman Daniel J Multi-junction solar cell device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Photovoltaic Specialists Conference, 2002. Conference Record of the 29th IEEE May 2002", article J. F. GEISZ ET AL.: "'GaNPAs Solar Cells Lattice-Matched to GaP", pages: 864 - 867 *

Also Published As

Publication number Publication date
WO2009020875A2 (en) 2009-02-12

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