WO2009020318A3 - Unit pixel suppressing dead zone and afterimage - Google Patents

Unit pixel suppressing dead zone and afterimage Download PDF

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Publication number
WO2009020318A3
WO2009020318A3 PCT/KR2008/004509 KR2008004509W WO2009020318A3 WO 2009020318 A3 WO2009020318 A3 WO 2009020318A3 KR 2008004509 W KR2008004509 W KR 2008004509W WO 2009020318 A3 WO2009020318 A3 WO 2009020318A3
Authority
WO
WIPO (PCT)
Prior art keywords
portions
unit pixel
transfer transistors
afterimage
gate terminals
Prior art date
Application number
PCT/KR2008/004509
Other languages
French (fr)
Other versions
WO2009020318A2 (en
Inventor
Do Young Lee
Shin Kim
Original Assignee
Siliconfile Technologies Inc
Do Young Lee
Shin Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconfile Technologies Inc, Do Young Lee, Shin Kim filed Critical Siliconfile Technologies Inc
Publication of WO2009020318A2 publication Critical patent/WO2009020318A2/en
Publication of WO2009020318A3 publication Critical patent/WO2009020318A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Provided is a unit pixel suppressing a dead zone and an afterimage. The unit pixel includes: one or more photodiodes generating image charges corresponding to a received image signal; and one or more transfer transistors for transferring the image charges to a floating diffusion area by performing switching operations in response to a transfer control signal, wherein portions of the one or more photodiode areas, which are close to gate terminals of the corresponding transfer transistors have higher concentration of impurity ions than the remaining portions, wherein an equipotential surface having the highest or lowest voltage level among equipotential surfaces is disposed at the portions of the photodiode areas close to the gate terminals of the transfer transistors, or wherein the portions of the photodiode areas close to the gate terminals of the transfer transistors have a depth deeper than the remaining portions of the photodiode.
PCT/KR2008/004509 2007-08-09 2008-08-04 Unit pixel suppressing dead zone and afterimage WO2009020318A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070080165A KR20090015652A (en) 2007-08-09 2007-08-09 Unit pixel suppressing dead zone and afterimage
KR10-2007-0080165 2007-08-09

Publications (2)

Publication Number Publication Date
WO2009020318A2 WO2009020318A2 (en) 2009-02-12
WO2009020318A3 true WO2009020318A3 (en) 2009-04-16

Family

ID=40341885

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/004509 WO2009020318A2 (en) 2007-08-09 2008-08-04 Unit pixel suppressing dead zone and afterimage

Country Status (2)

Country Link
KR (1) KR20090015652A (en)
WO (1) WO2009020318A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102222679A (en) * 2011-07-05 2011-10-19 上海宏力半导体制造有限公司 CMOS (complementary metal-oxide-semiconductor transistor) image sensor and manufacturing method thereof
KR101997539B1 (en) 2012-07-13 2019-07-08 삼성전자주식회사 Image sensor and method of forming the same
CN103311260A (en) * 2013-06-08 2013-09-18 上海集成电路研发中心有限公司 CMOS (complementary metal oxide semiconductor) image sensor, pixel unit of CMOS image sensor, and production method of pixel unit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020020863A1 (en) * 2000-06-20 2002-02-21 Lee Seo Kyu CMOS active pixel for improving sensitivity
KR20020048705A (en) * 2000-12-18 2002-06-24 박종섭 Image sensor capable of improving low light characteristics and method for forming the same
KR20050104083A (en) * 2004-04-28 2005-11-02 매그나칩 반도체 유한회사 Cmos image sensor
KR20060064722A (en) * 2004-12-09 2006-06-14 삼성전자주식회사 Cmos image sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020020863A1 (en) * 2000-06-20 2002-02-21 Lee Seo Kyu CMOS active pixel for improving sensitivity
KR20020048705A (en) * 2000-12-18 2002-06-24 박종섭 Image sensor capable of improving low light characteristics and method for forming the same
KR20050104083A (en) * 2004-04-28 2005-11-02 매그나칩 반도체 유한회사 Cmos image sensor
KR20060064722A (en) * 2004-12-09 2006-06-14 삼성전자주식회사 Cmos image sensor

Also Published As

Publication number Publication date
KR20090015652A (en) 2009-02-12
WO2009020318A2 (en) 2009-02-12

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