WO2009019316A3 - Method for forming mems structures comprising narrow gaps - Google Patents
Method for forming mems structures comprising narrow gaps Download PDFInfo
- Publication number
- WO2009019316A3 WO2009019316A3 PCT/EP2008/060486 EP2008060486W WO2009019316A3 WO 2009019316 A3 WO2009019316 A3 WO 2009019316A3 EP 2008060486 W EP2008060486 W EP 2008060486W WO 2009019316 A3 WO2009019316 A3 WO 2009019316A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gaps
- narrow gaps
- forming
- mems structures
- narrow
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
- B81C1/00063—Trenches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
- H03H3/0077—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients by tuning of resonance frequency
- H03H3/0078—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients by tuning of resonance frequency involving adjustment of the transducing gap
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0145—Hermetically sealing an opening in the lid
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
Abstract
A method for forming narrow gaps, for ex ample gaps narrower than 400nm, e.g. less than 200nm or 100 nm, between elements of a MEMS structure is described, as well as a method for forming micromachined or MEMS structures comprising narrow gaps. The method may for example be used for forming high frequency micromechanical resonators comprising narrow transduction gaps.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US96396807P | 2007-08-08 | 2007-08-08 | |
US60/963,968 | 2007-08-08 | ||
US2058608P | 2008-01-11 | 2008-01-11 | |
US61/020,586 | 2008-01-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009019316A2 WO2009019316A2 (en) | 2009-02-12 |
WO2009019316A3 true WO2009019316A3 (en) | 2009-05-22 |
Family
ID=40341814
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2008/060486 WO2009019316A2 (en) | 2007-08-08 | 2008-08-08 | Method for forming mems structures comprising narrow gaps |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2009019316A2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10105187A1 (en) * | 2001-02-06 | 2002-08-08 | Bosch Gmbh Robert | Method for generating surface micromechanical structures and sensor |
EP1232996A2 (en) * | 2001-02-14 | 2002-08-21 | Robert Bosch Gmbh | Micromechanical device and process for its manufacture |
EP1435336A2 (en) * | 2002-12-31 | 2004-07-07 | Robert Bosch Gmbh | Gap tuning for surface micromachined structures in an epitaxial reactor |
-
2008
- 2008-08-08 WO PCT/EP2008/060486 patent/WO2009019316A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10105187A1 (en) * | 2001-02-06 | 2002-08-08 | Bosch Gmbh Robert | Method for generating surface micromechanical structures and sensor |
EP1232996A2 (en) * | 2001-02-14 | 2002-08-21 | Robert Bosch Gmbh | Micromechanical device and process for its manufacture |
EP1435336A2 (en) * | 2002-12-31 | 2004-07-07 | Robert Bosch Gmbh | Gap tuning for surface micromachined structures in an epitaxial reactor |
Also Published As
Publication number | Publication date |
---|---|
WO2009019316A2 (en) | 2009-02-12 |
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