WO2009014348A3 - Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same - Google Patents

Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same Download PDF

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Publication number
WO2009014348A3
WO2009014348A3 PCT/KR2008/004202 KR2008004202W WO2009014348A3 WO 2009014348 A3 WO2009014348 A3 WO 2009014348A3 KR 2008004202 W KR2008004202 W KR 2008004202W WO 2009014348 A3 WO2009014348 A3 WO 2009014348A3
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WO
WIPO (PCT)
Prior art keywords
terminal
mit
same
switch
insulator transition
Prior art date
Application number
PCT/KR2008/004202
Other languages
French (fr)
Other versions
WO2009014348A2 (en
Inventor
Hyun-Tak Kim
Yong-Wook Lee
Bong-Jun Kim
Sung-Youl Choi
Sun-Jin Yun
Original Assignee
Korea Electronics Telecomm
Hyun-Tak Kim
Yong-Wook Lee
Bong-Jun Kim
Sung-Youl Choi
Sun-Jin Yun
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070101626A external-priority patent/KR100859717B1/en
Application filed by Korea Electronics Telecomm, Hyun-Tak Kim, Yong-Wook Lee, Bong-Jun Kim, Sung-Youl Choi, Sun-Jin Yun filed Critical Korea Electronics Telecomm
Publication of WO2009014348A2 publication Critical patent/WO2009014348A2/en
Publication of WO2009014348A3 publication Critical patent/WO2009014348A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/03—Devices using Mott metal-insulator transition, e.g. field effect transistors

Abstract

Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.
PCT/KR2008/004202 2007-07-20 2008-07-18 Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same WO2009014348A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2007-0073102 2007-07-20
KR20070073102 2007-07-20
KR10-2007-0101626 2007-10-09
KR1020070101626A KR100859717B1 (en) 2007-05-07 2007-10-09 Three terminal metal-insulator transition(mit) switch, switching system using the same switch, and method of controlling mit of the same switch

Publications (2)

Publication Number Publication Date
WO2009014348A2 WO2009014348A2 (en) 2009-01-29
WO2009014348A3 true WO2009014348A3 (en) 2009-03-19

Family

ID=40281966

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/004202 WO2009014348A2 (en) 2007-07-20 2008-07-18 Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same

Country Status (1)

Country Link
WO (1) WO2009014348A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794739A (en) * 1993-09-20 1995-04-07 Sony Corp Field effect transistor having quantum boxes and its manufacturing method
US6121642A (en) * 1998-07-20 2000-09-19 International Business Machines Corporation Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications
US6624463B2 (en) * 2001-09-17 2003-09-23 Hyun-Tak Kim Switching field effect transistor using abrupt metal-insulator transition
US20060011942A1 (en) * 2004-07-15 2006-01-19 Kim Hyun T 2-Terminal semiconductor device using abrupt metal-insulator transition semiconductor material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794739A (en) * 1993-09-20 1995-04-07 Sony Corp Field effect transistor having quantum boxes and its manufacturing method
US6121642A (en) * 1998-07-20 2000-09-19 International Business Machines Corporation Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications
US6624463B2 (en) * 2001-09-17 2003-09-23 Hyun-Tak Kim Switching field effect transistor using abrupt metal-insulator transition
US20060011942A1 (en) * 2004-07-15 2006-01-19 Kim Hyun T 2-Terminal semiconductor device using abrupt metal-insulator transition semiconductor material

Also Published As

Publication number Publication date
WO2009014348A2 (en) 2009-01-29

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