WO2009005697A1 - Negative n-epi biasing sensing and high side gate driver output spurious turn-on prevention due to n-epi p-sub diode conduction during n-epi negative transient voltage - Google Patents

Negative n-epi biasing sensing and high side gate driver output spurious turn-on prevention due to n-epi p-sub diode conduction during n-epi negative transient voltage Download PDF

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Publication number
WO2009005697A1
WO2009005697A1 PCT/US2008/007981 US2008007981W WO2009005697A1 WO 2009005697 A1 WO2009005697 A1 WO 2009005697A1 US 2008007981 W US2008007981 W US 2008007981W WO 2009005697 A1 WO2009005697 A1 WO 2009005697A1
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Prior art keywords
epi
circuit
negative
transistor
driver
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PCT/US2008/007981
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French (fr)
Inventor
Marco Giandalia
Sergio Morini
Christian Locatelli
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Infineon Technologies Americas Corp
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International Rectifier Corp USA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017545—Coupling arrangements; Impedance matching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Definitions

  • the present invention relates gate drivers, and more specifically to detecting and preventing spurious gate driver output turn ON due to N- epi P-sub diode conduction during N-EPI negative transient voltage. These negative transients can occur due to one parasitic inductive and current transients.
  • the high-side driver including first and second complementary switched MOSFET series connected at a high- side node, driving the high-side power switching device, one of the MOSFETs having a parasitic bipolar transistor formed between the substrate, an N+ epitaxial region connected to the high-side driver supply voltage and the switched node, with the parasitic transistor having a base electrode formed by the N+ epitaxial region, an emitter electrode formed by the substrate and a collector electrode formed by the switched node, such that if a transient voltage that is negative with respect to the substrate is present at the high- side driver supply voltage, the parasitic transistor will conduct a short circuit current between the switched node and the substrate; a first circuit for controlling the conduction of the first and second MOSFETs to switch the high-side switching device ON and OFF; a diffusion in the N+ epitaxial region in which a terminal connected to the switched node is provided by the diffusion forming the collector of the parasitic transistor; and a second circuit coupled to the diffusion for sensing the high-side driver supply voltage at the epi
  • Figure IA is a circuit diagram of the connection between a driver circuit and a half-bridge switching stage that it controls;
  • Figure IB is a diagram of the driver circuit of Figure IA
  • Figure 2 A is a diagram of a high voltage NMOS driver used in the circuit of Figure IA showing the parasitic transistors;
  • Figure 2B is a graph showing negative transient at pin VB, the negative transient at the switching mode VS, and a counter start reset original time;
  • Figure 3 A is a diagram of a portion of the high voltage NMOS driver of Figure 2A including a P diffusion forming a P-Zener ring added according to the invention
  • Figure 3B is a diagram of the parasitic PNP transistor including the P-Zener ring and a resistance
  • Figure 3C is a graph showing the voltages at pin VB, pin VS and at the P- Zener ring V P . Z ene r ;
  • Figure 4 is a diagram of the VS sensing and reset circuit
  • Figures 5A and 5B are graphs showing voltage VCE, short circuit current Isc, and voltage at pin VS for two different die sizes of the high driver IC.
  • Driver circuits for example, for driving half-bridge circuits that include two power switching devices series connected at a switched node, may include a high side driver that is connected to a higher voltage supply than a low side driver.
  • a level shift circuit is used to level shift high side drive input signals to the driver circuit to drive the high side driver, which is referenced to a floating voltage level VS. This voltage level VS is present at the switched node located at the connection of the power switching devices of the half-bridge.
  • Figures IA and IB show an example of such driver circuit 5.
  • Figure IA illustrates power switching devices, e.g., MOSFETs, Ql and Q2 series connected at a switched node to form a half-bridge. The node between the power switching devices is the switched node VS. As shown, a load is connected to the switched node VS. In the circuit shown, power switching devices Ql and Q2 are alternately switched ON and OFF. When power switching device Ql is turned ON, a current flowing through the switched node VS is sourced to the load. When power switching device Ql is turned OFF, power switching device Q2 is turned ON and sinks the load circuit, e.g., inductive motor current if the load is a motor. There is a dead time between the ON times provided by dead time circuits, not shown.
  • power switching devices e.g., MOSFETs, Ql and Q2 series connected at a switched node to form a half-bridge. The node between the power switching devices is the switched no
  • the high side driver may comprise two complementary switched switching devices Nl and N2, for example, MOSFETs.
  • the low side driver may comprise two complementary switched switching devices N3 and N4, e.g., MOSFETs.
  • the high side drive input signals at pin HIN to the driver circuit 5 are provided to a level shifting circuit 30 as pulses from a pulse generator 40.
  • the level shifting circuit 30 includes transistors N5 and N6, whose drains are connected to a pulse filter 50.
  • the pulse filter 50 controls the operation of a latch 60.
  • the high side driver 10 switching devices Nl and N2 provide an output on pin HO.
  • a high signal at pin HO provides output to drive or turn the high side switching device Ql ON.
  • pin HO goes low.
  • a low signal at pin HO turns the high side switching device Ql OFF.
  • FIG. 2A shows a portion of the high voltage NMOS driver 10.
  • the driver 10 includes a HV NMOS device N2.
  • the source(s), gate (G) and drain (D) of this device are shown.
  • a parasitic PNP transistor 100 is formed between VS, the epitaxial region N+ epi and the P-substrate.
  • Another parasitic transistor, a NPN transistor 102 is also formed as shown.
  • the PNP transistor 100 is present between pin VS and the substrate forming the base of the transistor.
  • Pin VB is connected to the N+ epitaxial layer forming the base of this transistor and the P-substrate is the emitter of this transmitter.
  • the collector of the transistor is connected typically to pin VS.
  • the N+ epi supply voltage i.e., the voltage at pin VB
  • the voltage at pin VB can go negative due to wire parasitic inductance and current transients. As shown in Figure 2B, this will cause voltage at the switching node VS to go even more negative.
  • a P diffusion 101 in order to sense the negative N- epitaxial voltage at pin VB, a P diffusion 101, illustrated in Figures 2 A and 3 A, is added. Any P type diffusion shape or dimension working as described can be used.
  • a Zener ring 101 of P material provides an additional collector for the parasitic bipolar transistor 100.
  • a resistance R is provided between pin VS and the Zener ring.
  • Figure 3 B shows the parasitic PNP transistor 100 including the collector provided by the Zener ring 101 and the resistance R between pin VS and the Zener ring. The transistor 100 turns on when voltage at pin VB is low.
  • FIG. 3C The voltages at pin VB, pin VS, and at the P-diffusion during negative voltage at pin VB is shown in the graph of Figure 3C.
  • the resistor R is used to sense the negative voltage between VS and the Zener ring 101.
  • Figure 4 illustrates a circuit that performs sensing of the negative voltage VB and provides an active reset.
  • the parasitic PNP transistor 100 has its emitter at the P-substrate, its base at pin VB (N+ Epi), and its collector at the added P- Zener ring.
  • a resistance R of, for example 1OK Ohms, is connected between the Zener ring and VS for sensing when the voltage at pin VB goes too low.
  • a voltage is developed across the resistor R and, an additional reset is provided to the high side flip flop 60 (Figure IB) to keep it in a reset condition during the negative voltage condition at pin VB.
  • a blanking circuit 110 is provided to prevent turning on a transistor 120 for the blanking time duration.
  • a reset counter 130 is set, which provides a reset pulse of, for example 3 microseconds, during and over the negative voltage duration to clear the flip flop 60 (FF CIr) and ensure that the high side switching device Ql is turned off by keeping the driver circuit off (HO turn off). This prevents any spurious set signal at the latch 60.
  • Other parameter values for the resistance R, the blanking time, and the reset pulse can be chosen as necessary.
  • any passive or active device working as a collector current detector for the bipolar transistor 100 can be used in place of the resistor R.
  • Figures 5A and 5B show the short circuit current for two different die sizes that can occur during negative VB, VS transients, leading to potential damage, what the invention prevents.
  • Figure 5A shows voltages VCE and at pin VS and short circuit current Isc for a die size 3.0
  • Figure 5B shows voltages VCE and at pin VS and short circuit current Isc for a die size 4.0.
  • the short circuit currents are 140 and 320A, respectively.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

A high-side driver in a driver circuit for driving a half-bridge stage having high- and low-side power switching devices series connected at a switched node, the high-side driver driving the high-side power switching device The high-side driver including first and second complementary switched MOSFET series connected at a highside node, driving the high-side power switching device, one of the MOSFETs having a parasitic bipolar transistor formed between the substrate, an N+ epitaxial region connected to the high-side driver supply voltage and the switched node, with the parasitic transistor having a base electrode formed by the N+ epitaxial region, an emitter electrode formed by the substrate and a collector electrode formed by the switched node, such if a transient voltage that is negative with respect to the substrate is present at the highside driver supply voltage, the parasitic transistor will conduct a short circuit current between the switched node and the substrate.

Description

NEGATIVE N-EPI BIASING SENSING AND HIGH SIDE GATE DRIVER
OUTPUT SPURIOUS TURN-ON PREVENTION DUE TO N-EPI P-SUB DIODE CONDUCTION DURING N-EPI NEGATIVE TRANSIENT VOLTAGE
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is based on and claims priority to U.S. Provisional Patent Application Serial No. 60/946,805, filed on June 28, 2007 and entitled NEGATIVE N- EPI BIASING SENSING AND HIGH SIDE GATE DRIVER OUTPUT SPURIOUS TURN-ON PREVENTION DUE TO N-EPI P-SUB DIODE CONDUCTION DURING N-EPI NEGATIVE TRANSIENT VOLTAGE, the entire contents of which are hereby incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] The present invention relates gate drivers, and more specifically to detecting and preventing spurious gate driver output turn ON due to N- epi P-sub diode conduction during N-EPI negative transient voltage. These negative transients can occur due to one parasitic inductive and current transients.
[0003] What is needed is a circuit that will prevent an N- epi P-substrate an epitaxial diode formed by a parasitic transistor (base-emitter) from conducting during a negative transient voltage, causing a spurious turn ON at the high side gate driver output when voltage at the base of the transistor of the high driver goes very low or negative.
SUMMARY OF THE INVENTION
[0004] It is an object of the present invention to provide a circuit that prevents spurious turn ON of the high driver when voltage at a base of a parasitic transistor goes very low or negative. [0005] Provided is a high-side driver in a driver circuit for driving a half-bridge stage having high- and low-side power switching devices series connected at a switched node, the high-side driver driving the high-side power switching device. The high-side driver including first and second complementary switched MOSFET series connected at a high- side node, driving the high-side power switching device, one of the MOSFETs having a parasitic bipolar transistor formed between the substrate, an N+ epitaxial region connected to the high-side driver supply voltage and the switched node, with the parasitic transistor having a base electrode formed by the N+ epitaxial region, an emitter electrode formed by the substrate and a collector electrode formed by the switched node, such that if a transient voltage that is negative with respect to the substrate is present at the high- side driver supply voltage, the parasitic transistor will conduct a short circuit current between the switched node and the substrate; a first circuit for controlling the conduction of the first and second MOSFETs to switch the high-side switching device ON and OFF; a diffusion in the N+ epitaxial region in which a terminal connected to the switched node is provided by the diffusion forming the collector of the parasitic transistor; and a second circuit coupled to the diffusion for sensing the high-side driver supply voltage at the epitaxial region and providing a signal to the controller circuit to prevent turn-ON of the high-side power switching device.
[0006] Other features and advantages of the present invention will become apparent from the following description of the invention that refers to the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Figure IA is a circuit diagram of the connection between a driver circuit and a half-bridge switching stage that it controls;
[0008] Figure IB is a diagram of the driver circuit of Figure IA;
[0009] Figure 2 A is a diagram of a high voltage NMOS driver used in the circuit of Figure IA showing the parasitic transistors; [0010] Figure 2B is a graph showing negative transient at pin VB, the negative transient at the switching mode VS, and a counter start reset original time;
[0011] Figure 3 A is a diagram of a portion of the high voltage NMOS driver of Figure 2A including a P diffusion forming a P-Zener ring added according to the invention;
[0012] Figure 3B is a diagram of the parasitic PNP transistor including the P-Zener ring and a resistance;
[0013] Figure 3C is a graph showing the voltages at pin VB, pin VS and at the P- Zener ring VP.Zener;
[0014] Figure 4 is a diagram of the VS sensing and reset circuit; and
[0015] Figures 5A and 5B are graphs showing voltage VCE, short circuit current Isc, and voltage at pin VS for two different die sizes of the high driver IC.
DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION
[0016] Driver circuits, for example, for driving half-bridge circuits that include two power switching devices series connected at a switched node, may include a high side driver that is connected to a higher voltage supply than a low side driver. A level shift circuit is used to level shift high side drive input signals to the driver circuit to drive the high side driver, which is referenced to a floating voltage level VS. This voltage level VS is present at the switched node located at the connection of the power switching devices of the half-bridge.
[0017] Figures IA and IB show an example of such driver circuit 5. Figure IA illustrates power switching devices, e.g., MOSFETs, Ql and Q2 series connected at a switched node to form a half-bridge. The node between the power switching devices is the switched node VS. As shown, a load is connected to the switched node VS. In the circuit shown, power switching devices Ql and Q2 are alternately switched ON and OFF. When power switching device Ql is turned ON, a current flowing through the switched node VS is sourced to the load. When power switching device Ql is turned OFF, power switching device Q2 is turned ON and sinks the load circuit, e.g., inductive motor current if the load is a motor. There is a dead time between the ON times provided by dead time circuits, not shown.
[0018] As shown in Figure IB, the high side driver, indicated at 10, may comprise two complementary switched switching devices Nl and N2, for example, MOSFETs. Similarly, the low side driver, indicated at 20, may comprise two complementary switched switching devices N3 and N4, e.g., MOSFETs. The high side drive input signals at pin HIN to the driver circuit 5 are provided to a level shifting circuit 30 as pulses from a pulse generator 40. The level shifting circuit 30 includes transistors N5 and N6, whose drains are connected to a pulse filter 50. The pulse filter 50 controls the operation of a latch 60. When the latch 60 is set by the pulse filter 50, the high side driver 10 switching devices Nl and N2 provide an output on pin HO. A high signal at pin HO provides output to drive or turn the high side switching device Ql ON. When the latch 60 is reset, pin HO goes low. A low signal at pin HO turns the high side switching device Ql OFF.
[0019] Referring now to both Figures IA and IB, because the high side driver 10 is referenced to the floating voltage at pin VS, which is equal to the voltage at the switched node VS, it is necessary to provide an increased supply voltage to the high side driver 10 as well as to the level shifting circuit 30. This voltage is derived as a bootstrap voltage at pin VB from a bootstrap capacitor CBS. When the low side switching device Q2 is turned ON, capacitor CBS charges from a voltage source VCC through a bootstrap diode DBS. Accordingly, a voltage VCC appears across the capacitor CBS.
[0020] When low side switching device Q2 goes OFF, voltage at the switched node VS floats to a level above ground through high side switching device Ql and voltage at pin VB coupled to the bootstrap capacitor CBS rises to a level above VCC. This provides a supply voltage to the high side driver 10. [0021] Figure 2A shows a portion of the high voltage NMOS driver 10. As shown, the driver 10 includes a HV NMOS device N2. The source(s), gate (G) and drain (D) of this device are shown. Because of the N+ epitaxial region, a parasitic PNP transistor 100 is formed between VS, the epitaxial region N+ epi and the P-substrate. Another parasitic transistor, a NPN transistor 102, is also formed as shown. The problem arises with the parasitic PNP transistor 100. The PNP transistor 100 is present between pin VS and the substrate forming the base of the transistor. Pin VB is connected to the N+ epitaxial layer forming the base of this transistor and the P-substrate is the emitter of this transmitter. The collector of the transistor is connected typically to pin VS.
[0022] In certain situations, the N+ epi supply voltage, i.e., the voltage at pin VB, can go negative due to wire parasitic inductance and current transients. As shown in Figure 2B, this will cause voltage at the switching node VS to go even more negative.
[0023] If voltage at pin VB goes very low or negative, the P-substrate to epitaxial diode formed by this parasitic transistor 100 (base-emitter) (Figure 2A) will conduct current, causing a possible spurious set signal at the latch 60 (see Figure IB), and as a consequence a spurious turn ON at the high side gate driver output at pin HO.
[0024] In accordance with the present invention, in order to sense the negative N- epitaxial voltage at pin VB, a P diffusion 101, illustrated in Figures 2 A and 3 A, is added. Any P type diffusion shape or dimension working as described can be used. As illustrated in Figure 3 A, a Zener ring 101 of P material provides an additional collector for the parasitic bipolar transistor 100. Also a resistance R is provided between pin VS and the Zener ring. Figure 3 B shows the parasitic PNP transistor 100 including the collector provided by the Zener ring 101 and the resistance R between pin VS and the Zener ring. The transistor 100 turns on when voltage at pin VB is low. The voltages at pin VB, pin VS, and at the P-diffusion during negative voltage at pin VB is shown in the graph of Figure 3C. The resistor R is used to sense the negative voltage between VS and the Zener ring 101. [0025] Figure 4 illustrates a circuit that performs sensing of the negative voltage VB and provides an active reset. As illustrated, the parasitic PNP transistor 100 has its emitter at the P-substrate, its base at pin VB (N+ Epi), and its collector at the added P- Zener ring. A resistance R of, for example 1OK Ohms, is connected between the Zener ring and VS for sensing when the voltage at pin VB goes too low. When this occurs, a voltage is developed across the resistor R and, an additional reset is provided to the high side flip flop 60 (Figure IB) to keep it in a reset condition during the negative voltage condition at pin VB. As shown in Figure 4, a blanking circuit 110 is provided to prevent turning on a transistor 120 for the blanking time duration. After the blanking time of, for example 50 nanoseconds, if the low voltage condition at pin VB is still present, a reset counter 130 is set, which provides a reset pulse of, for example 3 microseconds, during and over the negative voltage duration to clear the flip flop 60 (FF CIr) and ensure that the high side switching device Ql is turned off by keeping the driver circuit off (HO turn off). This prevents any spurious set signal at the latch 60. Other parameter values for the resistance R, the blanking time, and the reset pulse can be chosen as necessary. Also, any passive or active device working as a collector current detector for the bipolar transistor 100 can be used in place of the resistor R.
[0026] Figures 5A and 5B show the short circuit current for two different die sizes that can occur during negative VB, VS transients, leading to potential damage, what the invention prevents. In particular, Figure 5A shows voltages VCE and at pin VS and short circuit current Isc for a die size 3.0 and Figure 5B shows voltages VCE and at pin VS and short circuit current Isc for a die size 4.0. The short circuit currents are 140 and 320A, respectively.
[0027] Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention not be limited by the specific disclosure herein.

Claims

WHAT IS CLAIMED IS:
1. A high-side driver in a driver circuit for driving a half-bridge stage having high- and low-side power switching devices series connected at a switched node, the high-side driver driving the high-side power switching device, the high-side driver comprising: first and second complementary switched MOSFET series connected at a high- side node, driving the high-side power switching device, one of the MOSFETs having a parasitic bipolar transistor formed between the substrate, an N+ epitaxial region connected to the high-side driver supply voltage, and the switched node, with the parasitic transistor having a base electrode formed by the N+ epitaxial region, an emitter electrode formed by the substrate and a collector electrode formed by the switched node, such that if a transient voltage that is negative with respect to the substrate is present at the high-side driver supply voltage, said parasitic transistor will conduct a short circuit current between the switched node and the substrate; a first circuit for controlling the conduction of the first and second MOSFETs to switch said high-side switching device ON and OFF; a diffusion in said N+ epitaxial region in which a terminal connected to the switched node is provided by the diffusion forming the collector of the parasitic transistor; and a second circuit coupled to the diffusion for sensing the high-side driver supply voltage at the epitaxial region and providing a signal to said controller circuit to prevent turn-ON of the high-side power switching device.
2. The high-side driver of claim 1, wherein the second circuit comprises a sensor connected to sense voltage between the switched node and the diffusion when said parasitic transistor begins to conduct due to a negative transient at said high-side supply voltage.
3. The high-side driver of claim 2, wherein the second circuit further comprises: a transistor switch coupled to said sensor; a blanking circuit to prevent turning ON of the transistor for duration of a preset blanking time; and a reset counter for providing a reset pulse to reset the first circuit while the negative voltage is sensed and the transistor is ON, resetting of the first circuit keeping the high-side power switching device turned OFF.
4. The high-side driver of claim 2, wherein the sensor comprise a resistor.
5. The high-side driver of claim 1, wherein the diffusion comprises a ring in said epitaxial region.
6. The high-side driver of claim 1 , wherein one of the MOSFETs is an N MOS device and the parasitic transistor comprises a parasitic PNP transistor.
PCT/US2008/007981 2007-06-28 2008-06-27 Negative n-epi biasing sensing and high side gate driver output spurious turn-on prevention due to n-epi p-sub diode conduction during n-epi negative transient voltage Ceased WO2009005697A1 (en)

Applications Claiming Priority (4)

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US94680507P 2007-06-28 2007-06-28
US60/946,805 2007-06-28
US12/146,736 US7671638B2 (en) 2007-06-28 2008-06-26 Negative N-epi biasing sensing and high side gate driver output spurious turn-on prevention due to N-epi P-sub diode conduction during N-epi negative transient voltage
US12/146,736 2008-06-26

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* Cited by examiner, † Cited by third party
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US7672106B1 (en) * 2008-01-22 2010-03-02 Sullivan James D Switching incandescent lamps and other variable resistance loads with a solid state, smart, high side driver having overcurrent and temperature sensing protection circuits
JP5488256B2 (en) * 2010-06-25 2014-05-14 三菱電機株式会社 Power semiconductor device
US8564363B1 (en) * 2012-07-11 2013-10-22 Alitek Technology Corp. Pulse filter and bridge driver using the same
JP6117640B2 (en) * 2013-07-19 2017-04-19 ルネサスエレクトロニクス株式会社 Semiconductor device and drive system
US9374006B2 (en) * 2014-10-24 2016-06-21 Edgar Abdoulin Three-channel high-side gate driver having startup circuit and configurable outputs
ITUA20162322A1 (en) * 2016-04-05 2017-10-05 St Microelectronics Srl PROCEDURE FOR PILOTING SWITCHING, CIRCUIT AND CORRESPONDENT STAGES
CN110212813B (en) * 2018-12-12 2024-09-06 华帝股份有限公司 DC motor driving circuit, motor assembly using same and range hood
US10862483B2 (en) * 2019-01-25 2020-12-08 Infineon Technologies Austria Ag Low power cycle to cycle bit transfer in gate drivers
JP7490449B2 (en) * 2020-05-15 2024-05-27 ローム株式会社 Semiconductor integrated circuit, motor driver, and motor drive system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198139B1 (en) * 1998-09-14 2001-03-06 Mitsubishi Denki Kabushiki Kaisha Complementary MOS device
US6870354B2 (en) * 2002-07-24 2005-03-22 Seiko Epson Corporation Power source circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502412A (en) * 1995-05-04 1996-03-26 International Rectifier Corporation Method and circuit for driving power transistors in a half bridge configuration from control signals referenced to any potential between the line voltage and the line voltage return and integrated circuit incorporating the circuit
DE10325588A1 (en) * 2002-06-06 2003-12-18 Int Rectifier Corp Metal oxide semiconductor gate circuit includes driver circuit carrying out test to prevent simultaneous conduction when applied voltage cannot be resisted
JP4094984B2 (en) * 2003-04-24 2008-06-04 三菱電機株式会社 Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198139B1 (en) * 1998-09-14 2001-03-06 Mitsubishi Denki Kabushiki Kaisha Complementary MOS device
US6870354B2 (en) * 2002-07-24 2005-03-22 Seiko Epson Corporation Power source circuit

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US7671638B2 (en) 2010-03-02
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