WO2009004906A1 - Substrate treatment method, substrate treatment apparatus, reducing agent sheet, and computer-readable storage medium - Google Patents
Substrate treatment method, substrate treatment apparatus, reducing agent sheet, and computer-readable storage medium Download PDFInfo
- Publication number
- WO2009004906A1 WO2009004906A1 PCT/JP2008/060764 JP2008060764W WO2009004906A1 WO 2009004906 A1 WO2009004906 A1 WO 2009004906A1 JP 2008060764 W JP2008060764 W JP 2008060764W WO 2009004906 A1 WO2009004906 A1 WO 2009004906A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- reducing agent
- substrate treatment
- agent sheet
- substrate
- computer
- Prior art date
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
- F27D5/0037—Supports specially adapted for semi-conductors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A reducing agent sheet is adsorbed on a second holding member in a treatment apparatus, while a substrate having a metallic part formed on its surface is adsorbed on a first holding member. A nitrogen gas is introduced into a treatment chamber to produce a low-oxygen atmosphere in the inside of the treatment chamber. Subsequently, the reducing agent sheet is heated with a heater to a temperature equal to or higher than the reduction initiation temperature. The second holding member is moved down until the reducing agent sheet comes to contact with the metallic part of the substrate. The reducing agent sheet and the metal part are contacted with each other for a predetermined period to reduce the oxidized film formed on the surface of the metallic part of the substrate, thereby removing the oxidized film.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007176092 | 2007-07-04 | ||
JP2007-176092 | 2007-07-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009004906A1 true WO2009004906A1 (en) | 2009-01-08 |
Family
ID=40225960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/060764 WO2009004906A1 (en) | 2007-07-04 | 2008-06-12 | Substrate treatment method, substrate treatment apparatus, reducing agent sheet, and computer-readable storage medium |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW200917371A (en) |
WO (1) | WO2009004906A1 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09266188A (en) * | 1996-03-29 | 1997-10-07 | Hitachi Ltd | Surface purifying method |
JP2003231097A (en) * | 2002-02-08 | 2003-08-19 | Mitsubishi Gas Chem Co Inc | Structure mounting thin-film type particle having skeleton composed of carbon on substrate and its manufacturing method |
JP2004068044A (en) * | 2002-08-01 | 2004-03-04 | Honda Motor Co Ltd | Method for removing oxide on zinc-based alloy |
WO2007013445A1 (en) * | 2005-07-25 | 2007-02-01 | Tokyo Electron Limited | Method for processing metal member and apparatus for processing metal member |
-
2008
- 2008-06-12 WO PCT/JP2008/060764 patent/WO2009004906A1/en active Application Filing
- 2008-06-27 TW TW97124391A patent/TW200917371A/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09266188A (en) * | 1996-03-29 | 1997-10-07 | Hitachi Ltd | Surface purifying method |
JP2003231097A (en) * | 2002-02-08 | 2003-08-19 | Mitsubishi Gas Chem Co Inc | Structure mounting thin-film type particle having skeleton composed of carbon on substrate and its manufacturing method |
JP2004068044A (en) * | 2002-08-01 | 2004-03-04 | Honda Motor Co Ltd | Method for removing oxide on zinc-based alloy |
WO2007013445A1 (en) * | 2005-07-25 | 2007-02-01 | Tokyo Electron Limited | Method for processing metal member and apparatus for processing metal member |
Also Published As
Publication number | Publication date |
---|---|
TW200917371A (en) | 2009-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2007092179A5 (en) | ||
WO2008123431A1 (en) | Plasma oxidation method, plasma processing apparatus and recording medium | |
WO2007118031A3 (en) | Silicon oxynitride gate dielectric formation using multiple annealing steps | |
WO2009041117A1 (en) | Jig for vacuum heat treatment and method of vacuum heat treatment | |
WO2008096717A1 (en) | Placing bed structure, treating apparatus using the structure, and method for using the apparatus | |
TW200629373A (en) | Insulation film forming method and computer recording media | |
WO2008149844A1 (en) | Film forming method and film forming apparatus | |
WO2010086151A8 (en) | Zinc diffusion coating method | |
WO2005068087A3 (en) | Method for coating an object with hydrophobin at low temperatures | |
WO2007149627A3 (en) | A dry non-plasma treatment system and method of using | |
WO2007040834A3 (en) | Plural treatment step process for treating dielectric films | |
WO2011008456A3 (en) | Methods of forming oxide layers on substrates | |
WO2009066739A1 (en) | Method for fabricating semiconductor device, semiconductor device, communication apparatus, and semiconductor laser | |
WO2005083154A3 (en) | Cleaning of chamber components | |
WO2011097178A3 (en) | Methods for nitridation and oxidation | |
TW201130042A (en) | Substrate processing method and substrate processing apparatus | |
EP1965419A3 (en) | Absorber layer candidates and techniques for application | |
TW200703387A (en) | Method of production of multilayer ceramic electronic device | |
NZ598496A (en) | Processes for reducing flatness deviations in alloy articles | |
WO2005067634A3 (en) | Advanced multi-pressure worpiece processing | |
WO2009099284A3 (en) | Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit | |
WO2008123111A1 (en) | Substrate heat treatment device and substrate heat treatment method | |
CL2007003654A1 (en) | METHOD; AND APPARATUS FOR INJECTING A SUPERSONIC COHERENT JET OF AN INERT GAS INSIDE A COLADA SITUATED INSIDE A METALLURGICAL OVEN THAT HAS AN ATMOSPHERE HEATED IN THE OVEN. | |
WO2019008282A3 (en) | Method for producing a textured glass substrate coated with an anti-reflective sol-gel-type coating | |
WO2009072406A1 (en) | Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08777173 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08777173 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: JP |