WO2009001220A4 - Functionalization of microscopy probe tips - Google Patents

Functionalization of microscopy probe tips Download PDF

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Publication number
WO2009001220A4
WO2009001220A4 PCT/IB2008/002466 IB2008002466W WO2009001220A4 WO 2009001220 A4 WO2009001220 A4 WO 2009001220A4 IB 2008002466 W IB2008002466 W IB 2008002466W WO 2009001220 A4 WO2009001220 A4 WO 2009001220A4
Authority
WO
WIPO (PCT)
Prior art keywords
thd
sample surface
tip
organic
inorganic
Prior art date
Application number
PCT/IB2008/002466
Other languages
French (fr)
Other versions
WO2009001220A3 (en
WO2009001220A2 (en
WO2009001220A8 (en
Inventor
Ola Nilsen
Helmer Fjellvag
Havard J Haugen
Stale Petter Lyngstadaas
Jan Eirik Ellingsen
Sebastien Francis Lamolle
Original Assignee
Uni I Oslo
Ola Nilsen
Helmer Fjellvag
Havard J Haugen
Stale Petter Lyngstadaas
Ellingsen Jan E
Sebastien Francis Lamolle
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uni I Oslo, Ola Nilsen, Helmer Fjellvag, Havard J Haugen, Stale Petter Lyngstadaas, Ellingsen Jan E, Sebastien Francis Lamolle filed Critical Uni I Oslo
Publication of WO2009001220A2 publication Critical patent/WO2009001220A2/en
Publication of WO2009001220A8 publication Critical patent/WO2009001220A8/en
Publication of WO2009001220A3 publication Critical patent/WO2009001220A3/en
Publication of WO2009001220A4 publication Critical patent/WO2009001220A4/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/16—Probe manufacture
    • G01Q70/18—Functionalisation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/406—Oxides of iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
    • G01Q60/42—Functionalisation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/50—MFM [Magnetic Force Microscopy] or apparatus therefor, e.g. MFM probes
    • G01Q60/54—Probes, their manufacture, or their related instrumentation, e.g. holders
    • G01Q60/56—Probes with magnetic coating

Abstract

The invention comprises a method of functionalizing scanning probe microscope (SPM) tips to image and/or measure interactions between surfaces, including the surfaces of inorganic, organic-inorganic hybrid, organic, magnetic/conductive, hard coatings and biological materials. The invention further comprises the use of atomic layer deposition (ALD) to functionalize SPM tips.

Claims

rece ve y e n erna ona ureau on une . .
30
Ru(thd)3, CoCPrAMD)2, Co(acac)3, Co(thd)2, lr(acac)Ca(thd)3f NiCp2, Ni(acac)2, Nifapok, Ni(dmg)2, Ni(1PrAMD)2, Ni(thd)2, Pd(thd)2, Pd(hfac)2, R(CpMe)Me3, Pttøcack, Cu(acac)2, Cu(thd)2, Cu(hfac)2, CuCI, Cu(7PrAMD), ZnCI2, ZnMe2, ZnEt2, Zn(OAc)2, Zn, Zn[N(SiMe3J2], HgMe2, Mg, Mg(Cp)2, Mg(thd)j>, Ca(thd)2, CaCp2, Sr(Cp7Pr3J2, Sr(thd)2, Sr(methd)2, Sr(CpMe5J2, Ba(CpMe5J2, Ba(thd)2f ScCp3, Sc(thd)s, La[N(SiMe3J2J3, La(7PrAMD)3, La(thd)3, Ce(thd)4, Ce(thd)3phen, Pr[N(SiMeS)2I3, Nd(thd)3, Sm(thd)3, Eu(thd)3, Gd(thd)3, Dy(thd)3, Ho(thd)3, Er(thd)3l Tm(UId)3, and Lu[Co(SiMe3)J2CI.
69. The method of claims 67 and 68, wherein the inert solvents are each chosen from toluene, hexane, and heptane.
70. The method of claims 30 - 69, wherein said method is repeated 1 - 2000 times.
71. A functionalized AFM tip prepared using the method of claims 30 - 70.
72. A method of studying a surface comprising using an AFM tip as claimed in claims 1 - 29 in an AFM to image and/or probe a sample surface.
73. The method of claim 72, wherein the sample surface comprises a biological, organic, inorganic-hybrid, bone, or implant-like material.
74. The method of claim 72, wherein the sample surface contains a cell, protein, enzyme, antibody, or peptide.
75. The method of claim 72, wherein the sample surface is a bone cell.
76. A method of studying a surface comprising using an AFM tip as claimed in* claim 1 - 29 in an AFM to study the intermolecular forces between said tip and a sample surface.
77. The method of claim 76, wherein the sample surface comprises a biological, organic, inorganic-hybrid, bone, or implant-like material.
78. The method of claim 76, wherein the sample surface contains a cell, protein, enzyme, antibody, or peptide.
79. The method of claim 76, wherein the sample surface is a bone cell.
80. A functionalized SPM tip comprising a SPM tip coated with at least one material chosen from biological, organic, inorganic, organic-inorganic hybrid, magnetic/conductive and hard coatings.
81. A functionalized SPM tip of claim 80, wherein the SPM tip is a MFM tip coated with a magnetic/conductive film.
PCT/IB2008/002466 2007-06-26 2008-06-25 Functionalization of microscopy probe tips WO2009001220A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US92939907P 2007-06-26 2007-06-26
US60/929,399 2007-06-26
US93500807P 2007-07-23 2007-07-23
US60/935,008 2007-07-23
US3989008P 2008-03-27 2008-03-27
US61/039,890 2008-03-27

Publications (4)

Publication Number Publication Date
WO2009001220A2 WO2009001220A2 (en) 2008-12-31
WO2009001220A8 WO2009001220A8 (en) 2009-04-23
WO2009001220A3 WO2009001220A3 (en) 2009-06-04
WO2009001220A4 true WO2009001220A4 (en) 2009-08-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2008/002466 WO2009001220A2 (en) 2007-06-26 2008-06-25 Functionalization of microscopy probe tips

Country Status (1)

Country Link
WO (1) WO2009001220A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101975854B (en) * 2010-10-21 2013-07-17 中国科学院化学研究所 Single molecule force spectroscopy-based anti-cancer medicament identification method
KR101465725B1 (en) * 2013-01-23 2014-12-01 성균관대학교산학협력단 Calcium phosphate nano-aggregates using hydrophilic polymer modified orgarnic compound containing catechol group and preparation method therof
US9568496B1 (en) 2015-11-17 2017-02-14 International Business Machines Corporation Scanning probe sensor with a ferromagnetic fluid
US20190352710A1 (en) * 2017-01-05 2019-11-21 Virginia Commonwealth University System, method, computer-accessible medium and apparatus for dna mapping
CN106701828B (en) * 2017-01-17 2020-05-12 电子科技大学 Method for increasing probability of penetration of nanoprobe through cell membrane
CN107104975A (en) * 2017-05-22 2017-08-29 郑州云海信息技术有限公司 Data poolization layer, system and its implementation of a kind of support isomery based on MDC
WO2020130428A2 (en) * 2018-12-21 2020-06-25 포항공과대학교 산학협력단 Mussel adhesive protein-based photothermal agent, and photothermal reactive adhesive nanoparticles
CN117281831B (en) * 2023-11-24 2024-01-30 四川大学华西医院 Ruthenium-based artificial antioxidant enzyme and preparation method and application thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69212062T2 (en) * 1991-04-30 1996-11-28 Matsushita Electric Ind Co Ltd Scanning scanning microscope, molecular processing method using the microscope and method for perceiving the DNA base arrangement
JP2992141B2 (en) * 1991-09-26 1999-12-20 松下電器産業株式会社 Probe for atomic force microscope for scanning tunneling electron microscope and silicon compound containing 3-thienyl group
DE19504855A1 (en) * 1995-02-15 1996-08-22 Basf Ag Process for chemically differentiating imaging using atomic force microscopy
DE19636582C1 (en) * 1996-09-09 1997-11-27 Forschungszentrum Juelich Gmbh Sensor for measuring ion concentrations
NO20045674D0 (en) * 2004-12-28 2004-12-28 Uni I Oslo Thin films prepared with gas phase deposition technique
KR101159074B1 (en) * 2006-01-14 2012-06-25 삼성전자주식회사 Conductive carbon nanotube tip, probe of scanning probe microscope comprising the same and manufacturing method of the conductive carbon nanotube tip

Also Published As

Publication number Publication date
WO2009001220A3 (en) 2009-06-04
WO2009001220A2 (en) 2008-12-31
WO2009001220A8 (en) 2009-04-23

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