WO2008152889A1 - Photoelectric conversion element, method for manufacturing photoelectric conversion element, image sensor, and radiographic image detector - Google Patents

Photoelectric conversion element, method for manufacturing photoelectric conversion element, image sensor, and radiographic image detector Download PDF

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Publication number
WO2008152889A1
WO2008152889A1 PCT/JP2008/059342 JP2008059342W WO2008152889A1 WO 2008152889 A1 WO2008152889 A1 WO 2008152889A1 JP 2008059342 W JP2008059342 W JP 2008059342W WO 2008152889 A1 WO2008152889 A1 WO 2008152889A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
conversion element
image sensor
manufacturing
radiographic image
Prior art date
Application number
PCT/JP2008/059342
Other languages
French (fr)
Japanese (ja)
Inventor
Tomoo Izumi
Satoshi Masuda
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to JP2009519203A priority Critical patent/JP5141685B2/en
Publication of WO2008152889A1 publication Critical patent/WO2008152889A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80—Camera processing pipelines; Components thereof
    • H04N23/81—Camera processing pipelines; Components thereof for suppressing or minimising disturbance in the image signal generation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Signal Processing (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

A photoelectric conversion element to which an organic material is used and which has a low dark current, a method for manufacturing a photoelectric conversion element, an image sensor, and a radiographic image detector are provided. The photoelectric conversion element includes a transparent electrode on a support substrate, a photoelectric conversion layer composed of an organic semiconductor which absorbs the light passing through the transparent electrode and performs a charge separation, and a counter electrode arranged at an opposite side of the transparent electrode so as to sandwich the photoelectric conversion layer. The photoelectric conversion element has an electrode oxide film between the photoelectric conversion layer and the counter electrode.
PCT/JP2008/059342 2007-06-11 2008-05-21 Photoelectric conversion element, method for manufacturing photoelectric conversion element, image sensor, and radiographic image detector WO2008152889A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009519203A JP5141685B2 (en) 2007-06-11 2008-05-21 Method for manufacturing photoelectric conversion element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-153764 2007-06-11
JP2007153764 2007-06-11

Publications (1)

Publication Number Publication Date
WO2008152889A1 true WO2008152889A1 (en) 2008-12-18

Family

ID=40129501

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059342 WO2008152889A1 (en) 2007-06-11 2008-05-21 Photoelectric conversion element, method for manufacturing photoelectric conversion element, image sensor, and radiographic image detector

Country Status (2)

Country Link
JP (1) JP5141685B2 (en)
WO (1) WO2008152889A1 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010090123A1 (en) * 2009-02-04 2010-08-12 コニカミノルタホールディングス株式会社 Organic photoelectric conversion element, solar cell using same, and optical sensor array
JP2010177565A (en) * 2009-01-30 2010-08-12 Fujifilm Corp Method for manufacturing photoelectric conversion element
WO2010110164A1 (en) * 2009-03-26 2010-09-30 コニカミノルタホールディングス株式会社 Organic photoelectric converter, solar cell using the same, and optical sensor array
JP2010238794A (en) * 2009-03-30 2010-10-21 Dainippon Printing Co Ltd Organic thin film solar cell, and method of manufacturing the same
JP2011108951A (en) * 2009-11-19 2011-06-02 Mitsubishi Chemicals Corp Method of preparing semiconductor solution, and photoelectric conversion element using the same
JP2012231062A (en) * 2011-04-27 2012-11-22 Asahi Kasei Corp Organic thin film solar cell manufactured using acene-based compound
JP2012234945A (en) * 2011-04-28 2012-11-29 Konica Minolta Holdings Inc Organic photoelectric conversion element and manufacturing method thereof
JP2013115084A (en) * 2011-11-25 2013-06-10 Rohm Co Ltd Organic thin-film solar cell and method for manufacturing the same
WO2013176056A1 (en) * 2012-05-24 2013-11-28 富士フイルム株式会社 Photoelectric conversion element, image capture element, photoelectric conversion element fabrication method, and image capture element fabrication method
JP2014501443A (en) * 2010-12-20 2014-01-20 ソルベイ アセトウ ゲーエムベーハー Photovoltaic module
JP2014521207A (en) * 2011-07-04 2014-08-25 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ Photodiode device including a capacitor for controlling dark current or leakage current
JP2016149443A (en) * 2015-02-12 2016-08-18 株式会社日立製作所 Radiation detection element, radiation detector and nuclear medicine diagnostic apparatus and method of manufacturing radiation detection element
US10041748B2 (en) 2011-12-22 2018-08-07 3M Innovative Properties Company Carbon coated articles and methods for making the same

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57105744A (en) * 1980-12-23 1982-07-01 Canon Inc Photoconductive member
JPH01187983A (en) * 1988-01-22 1989-07-27 Fujitsu Ltd Manufacture of photodiode
JPH11274602A (en) * 1998-03-19 1999-10-08 Kawamura Inst Of Chem Res Optical semiconductor element
JP2000345321A (en) * 1999-05-31 2000-12-12 Kawamura Inst Of Chem Res Optical semiconductor device
JP2001320039A (en) * 2000-05-11 2001-11-16 Canon Inc Photoelectric conversion device
JP2002270923A (en) * 2001-03-14 2002-09-20 Kawamura Inst Of Chem Res Optical semiconductor element and its manufacturing method
JP2003101060A (en) * 2001-09-20 2003-04-04 National Institute Of Advanced Industrial & Technology Organic photocurrent amplifier element and manufacturing method therefor
WO2003081609A1 (en) * 2002-03-26 2003-10-02 Fujikura Ltd. Conductive glass and photoelectric conversion device using same
JP2003298152A (en) * 2002-04-01 2003-10-17 Sharp Corp Hetero-junction element
JP2005236278A (en) * 2004-01-23 2005-09-02 Kyoto Univ Organic photoelectric conversion device and organic solar cell
JP2006286434A (en) * 2005-04-01 2006-10-19 Kansai Pipe Kogyo Kk Electrode base for dye-sensitized solar cell, optical electrode and counter electrode for dye-sensitized solar cell, and dye-sensitized solar cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5040057B2 (en) * 2004-09-03 2012-10-03 コニカミノルタエムジー株式会社 Method for manufacturing photoelectric conversion element and method for manufacturing radiation image detector
JP2006245073A (en) * 2005-02-28 2006-09-14 Dainippon Printing Co Ltd Organic thin-film solar cell
WO2007029750A1 (en) * 2005-09-06 2007-03-15 Kyoto University Organic thin film photoelectric converter and method for manufacturing same

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57105744A (en) * 1980-12-23 1982-07-01 Canon Inc Photoconductive member
JPH01187983A (en) * 1988-01-22 1989-07-27 Fujitsu Ltd Manufacture of photodiode
JPH11274602A (en) * 1998-03-19 1999-10-08 Kawamura Inst Of Chem Res Optical semiconductor element
JP2000345321A (en) * 1999-05-31 2000-12-12 Kawamura Inst Of Chem Res Optical semiconductor device
JP2001320039A (en) * 2000-05-11 2001-11-16 Canon Inc Photoelectric conversion device
JP2002270923A (en) * 2001-03-14 2002-09-20 Kawamura Inst Of Chem Res Optical semiconductor element and its manufacturing method
JP2003101060A (en) * 2001-09-20 2003-04-04 National Institute Of Advanced Industrial & Technology Organic photocurrent amplifier element and manufacturing method therefor
WO2003081609A1 (en) * 2002-03-26 2003-10-02 Fujikura Ltd. Conductive glass and photoelectric conversion device using same
JP2003298152A (en) * 2002-04-01 2003-10-17 Sharp Corp Hetero-junction element
JP2005236278A (en) * 2004-01-23 2005-09-02 Kyoto Univ Organic photoelectric conversion device and organic solar cell
JP2006286434A (en) * 2005-04-01 2006-10-19 Kansai Pipe Kogyo Kk Electrode base for dye-sensitized solar cell, optical electrode and counter electrode for dye-sensitized solar cell, and dye-sensitized solar cell

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177565A (en) * 2009-01-30 2010-08-12 Fujifilm Corp Method for manufacturing photoelectric conversion element
JPWO2010090123A1 (en) * 2009-02-04 2012-08-09 コニカミノルタホールディングス株式会社 Organic photoelectric conversion element, solar cell using the same, and optical sensor array
WO2010090123A1 (en) * 2009-02-04 2010-08-12 コニカミノルタホールディングス株式会社 Organic photoelectric conversion element, solar cell using same, and optical sensor array
JP5360197B2 (en) * 2009-03-26 2013-12-04 コニカミノルタ株式会社 Organic photoelectric conversion element, solar cell using the same, and optical sensor array
WO2010110164A1 (en) * 2009-03-26 2010-09-30 コニカミノルタホールディングス株式会社 Organic photoelectric converter, solar cell using the same, and optical sensor array
JP2010238794A (en) * 2009-03-30 2010-10-21 Dainippon Printing Co Ltd Organic thin film solar cell, and method of manufacturing the same
JP2011108951A (en) * 2009-11-19 2011-06-02 Mitsubishi Chemicals Corp Method of preparing semiconductor solution, and photoelectric conversion element using the same
JP2014501443A (en) * 2010-12-20 2014-01-20 ソルベイ アセトウ ゲーエムベーハー Photovoltaic module
JP2012231062A (en) * 2011-04-27 2012-11-22 Asahi Kasei Corp Organic thin film solar cell manufactured using acene-based compound
JP2012234945A (en) * 2011-04-28 2012-11-29 Konica Minolta Holdings Inc Organic photoelectric conversion element and manufacturing method thereof
JP2014521207A (en) * 2011-07-04 2014-08-25 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ Photodiode device including a capacitor for controlling dark current or leakage current
JP2013115084A (en) * 2011-11-25 2013-06-10 Rohm Co Ltd Organic thin-film solar cell and method for manufacturing the same
US10041748B2 (en) 2011-12-22 2018-08-07 3M Innovative Properties Company Carbon coated articles and methods for making the same
WO2013176056A1 (en) * 2012-05-24 2013-11-28 富士フイルム株式会社 Photoelectric conversion element, image capture element, photoelectric conversion element fabrication method, and image capture element fabrication method
JP2016149443A (en) * 2015-02-12 2016-08-18 株式会社日立製作所 Radiation detection element, radiation detector and nuclear medicine diagnostic apparatus and method of manufacturing radiation detection element

Also Published As

Publication number Publication date
JPWO2008152889A1 (en) 2010-08-26
JP5141685B2 (en) 2013-02-13

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